Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.

Abstract: The disclosure relates to a test process of an image stabilization system in an image capture apparatus, comprising steps of: submitting the stabilization system to rotation vibratory movements around two distinct rotation axes, measuring characteristics of rotation vibratory movements, and setting the rotation vibratory movements to setpoint position values and, taking into consideration the measured characteristics of the vibratory movements, collecting images from the image capture apparatus submitted to vibration and analyzing the collected images.

Abstract: A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into approximately domed electrical bonding pads.

Abstract: A method and a circuit for controlling a dynamic image sensor defining, for each image, several successive time intervals of exposure of photodiode cells, starting from successive decreasing reset levels, wherein the time intervals of exposure of the image respect a homogeneous distribution of the amount of cells in ranges of brightness levels.

Abstract: An amplifier having at least one switch controlled by an output voltage of a hysteresis block, wherein the hysteresis block is adapted to receive an input voltage signal based on an integration of an error signal, a low threshold voltage and a high threshold voltage, and is arranged to change the output voltage from a first value to a second value when the input voltage signal is higher than the high threshold voltage and to change the output voltage from the second value to the first value when the input voltage signal is lower than the low threshold voltage, and wherein the low threshold voltage is equal to Vref??VDD and the high threshold voltage is equal to Vref+?VDD, where Vref is a common mode voltage level, ? is a non-zero constant, and VDD is a power supply voltage.

Abstract: An electronic component package including an electronic component having a circuit surface, a block of resin partially surrounding the electronic component, and a multi-layer interconnection in contact with said circuit surface, wherein the multi-layer interconnection is connected to bond-pads having a pitch lower than 50 ?m, and the block of resin is made of injection-molding resin.

Abstract: An RF amplifier including first and second branches coupled in parallel between first and second supply voltage terminals, and a differential pair including first and second transistors each having first and second main current terminals, the second main current terminal of the first transistor being coupled by a first capacitor to the first main current terminal of the second transistor, and the second main current terminal of the second transistor being coupled by a second capacitor to the first main current terminal of the first transistor, wherein the first branch includes a first resistor coupled between the first main current terminal of the first transistor and the second capacitor, and the second branch includes a second resistor; coupled between the first main current terminal of the second transistor and the first capacitor.

Abstract: A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; and mechanism capable of converting the motions and the deformations of the membrane into electricity.

Abstract: An electronic device which includes an electronic component having a substrate and a plurality of metal interconnection layers, the plurality of metal interconnection layers having a top surface. It further comprises a dielectric layer situated above said metal interconnection layers, a conductive layer situated above said dielectric layer, an inductor coil and a ground shield, the inductor coil being formed in the conductive layer and the ground shield being formed in a layer of said plurality of metal interconnection layers.

Abstract: An output stage of an integrated class-A amplifier in a technology adapted to a first voltage and intended to be powered by a second voltage greater than the first one, including: one or several transistors of a first channel type between a first terminal of application of the second voltage and an output terminal of the stage; transistors of a second channel type between this output terminal and a second terminal of application of the second voltage, wherein: a first transistor of the second channel type has its gate directly connected to an input terminal of the stage; at least a second and a third transistors of the second channel type are in series between the output terminal and said first transistor, the gate of the second transistor being connected to the midpoint of a resistive dividing bridge between said output terminal and the gate of the third transistor, and the gate of the third transistor being biased to a fixed voltage.

Abstract: An optical die, which is intended to be placed in front of an optical sensor of a semiconductor component, has an optically useful zone having an optical axis and exhibiting a variable refractive index. Specifically the refractive index of the die is variable in an annular peripheral zone lying between a radius Ru enveloping the useful zone and a smaller radius Ro. The index is varies as a function of radial distance from a higher value near the smaller radius Ro to a lower value near the radius Ru. The function of the variable refractive index lies between a maximum and minimum profile.

Abstract: Electronic modules are transported with respect to equipment for manipulating and testing electronic modules. The transport is formed from a thin support having openings for receiving electronic modules. A locating mechanism associated with the thin support serves to locate the support relative to transport and testing equipment. A mechanism is further provided for holding the received electronic modules within the openings during transport and testing.

Abstract: An amplifier having at least one switch controlled by an output voltage of a hysteresis block, wherein the hysteresis block is adapted to receive an input voltage signal based on an integration of an error signal, a low threshold voltage and a high threshold voltage, and is arranged to change the output voltage from a first value to a second value when the input voltage signal is higher than the high threshold voltage and to change the output voltage from the second value to the first value when the input voltage signal is lower than the low threshold voltage, and wherein the low threshold voltage is equal to Vref??VDD and the high threshold voltage is equal to Vref+?VDD, where Vref is a common mode voltage level, ? is a non-zero constant, and VDD is a power supply voltage.

Abstract: A semiconductor package includes a semiconductor die attached to a support having electrically conductive paths, the semiconductor die having a bond-pad electrically connected to the electrically a conductive path on the support by a wire-bond of a first metallic composition, the wire-bond and the bond-pad being coated with a protection layer of a second metallic composition.

Abstract: An analog switch including at least one first MOS transistor capable of transferring a signal from a first terminal to a second terminal; a connection circuit for bringing a substrate terminal of the first transistor to a voltage which is a function of the voltages of the first and second terminals; and a circuit for controlling a control voltage of the first transistor with the signal.

Abstract: A backside illumination semiconductor image sensor, wherein each photodetection cell includes a semiconductor body of a first conductivity type of a first doping level delimited by an insulation wall, electron-hole pairs being capable in said body after a backside illumination; on the front surface side of said body, a ring-shaped well of the second conductivity type, this well delimiting a substantially central region having its upper portion of the first conductivity type of a second doping level greater than the first doping level; and means for controlling the transfer of charge carriers from said body to said upper portion.

Abstract: An electrical connection support for receiving a semiconductor component includes an electrical connection plate having electrical connection pads. A stand-off structure is provided over the electrical connection pads. The stand-off structure may include a supplementary layer provided on a zone of the electrical connection plate which includes the electrical connection pads of the plate and is outside of a place configured to receive a semiconductor component. The stand-off structure further includes electrical connection vias passing through the supplementary layer. These vias are electrically connected to the electrical connection pads of the plate and have outer faces for making external electrical connection (for example, to another electrical connection support in a stacked structure).

Abstract: A multi-layer substrate has a front face with external pads. An integrated-circuit chip is positioned inside of the multi-layer substrate. An electronic and/or electric component is also positioned inside of the substrate above the integrated-circuit chip. An electrical connection network is formed in the multi-layer substrate to selectively connect the integrated-circuit chip and component together and to the external pads. A first screen is positioned within the multi-layer substrate between the integrated-circuit chip and the electrical connection network, this first screen being connected by vias to the external pads. A second screen is position on a top (external) surface of the multi-layer substrate above the component and electrical connection network, this second screen being connected by vias to the external pads. The integrated-circuit chip is position to be inside the first and second screens.

Abstract: System and method for synchronizing one or more secondary decoded media streams to a primary decoded media stream. The system includes a media stream processor and a mixer. The media stream processor receives a primary decoded media stream and secondary decoded media streams. The media stream processor synchronizes the secondary decoded media streams with the primary decoded media stream. The output of the media stream processor is coupled to the mixer. The mixer receives its second input from the primary decoded media stream. The mixer mixes the received streams and generates a PTS value for its output media stream by extrapolating the PTS of the primary decoded media stream.

Abstract: A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.