Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes an output node at which a bandgap reference voltage is generated. A transconductance amplifier circuit in a current control feedback loop has a differential input which receives a base current. A compensation current sink circuit operates to sink a compensation current from the output node corresponding to the base current received at the differential input of the transconductance amplifier.

Abstract: A device includes a sensor and processing circuitry. The sensor, in operation, generates a sequence of data samples. The processing circuitry, in operation, implements a sliding convolutional neural network (SCNN) having a plurality of layers to generate classification results based on the sequence of data samples. The SCNN sequentially processes the sequence of data samples, the sequentially processing the sequence of data samples including, for each received sample of a set of received data samples of the sequence of data samples, iteratively updating partial results of an inference of a first layer of the plurality of layers based on a respective patch of data samples of the sequence of data samples. The respective patch of data samples includes the received data sample. The classification results may be used to generate control signals, such as by the sensing device or a host processor coupled to the sensing device.

Abstract: A sensor module includes an organic substrate, a MEMS pressure sensor mounted to the organic substrate, and a unitary lid mounted on the substrate. The unitary lid includes a central elevated portion housing the MEMS pressure sensor, an aperture in the central elevated portion, and a flat flange extending from the central elevated portion to an edge of the organic substrate.

Abstract: A non-volatile memory includes a first area with first storage elements configured to store values associated with first neurons of a network and a second area with second storage elements. A control circuit applies one or more first input values to first read paths, each first read path including one among the first storage elements. A computing circuit adds currents supplied by the first read paths to generate an output current. A programming circuit converts the output current into a programming current, and uses the programming current to program a second storage element.

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.

Abstract: A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over (?)}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.

Abstract: An integrated system for electric-current monitoring includes a package and a MEMS sensor device arranged inside the package to provide an output electrical signal indicative of the electric current to be monitored. A sensing coil is provided within the package. The electric current to be monitored flows through the sensing coil. The MEMS sensor device is arranged relative to the sensing coil so as to be affected by flux lines of a magnetic field generated as a whole by the sensing coil as a function of the electric current to be monitored.

Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from an electromagnetic field intended to be received by an antenna and to deliver as an output a first clock signal. A transmit circuit includes an output coupled to the antenna and operates to deliver on its output a modulation signal in phase with the reception signal. A compensation circuit is configured to compensate for a first delay of the first clock signal due to the receive circuit and to the amplitude of the reception signal. The compensation circuit operates to determine a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the first delay.

Abstract: A device includes one or more motion sensors and processing circuitry coupled to the one or more motion sensors. The one or more sensors, in operation, generate motion sensor signals. The processing circuitry, in operation, classifies a user-activity type based on the motion sensor signals, the user-activity type being selected from a plurality of user-activity types including one or more moving activity types, detects a tilt angle of the device based on the motion sensor signals, and classifies a use-condition of the device as used or not used based on the detected tilt angle. The processing circuitry generates a use-warning signal based on whether the classification of the user-activity type is a moving activity type and on whether the classification of the use-condition is used. The device may include an integrated circuit including the motion sensors and the processing circuitry, and the integrated circuit may be embedded in a display.

Abstract: A circuit detects zero crosses in an input-signal and includes a low-pass-filter (LPF) receiving the input-signal and introducing a phase-shift dependent on the frequency thereof. Filter circuitry receives the output of the LPF, applies a fixed phase-shift thereto, and adjusts phase and DC-offset thereof based on control signals to produce a filtered output-signal. Control circuitry has a zero-crossing detector receiving the input-signal and the filtered output-signal, detecting zero-crossings of the input-signal and the filtered output-signal, asserting a digital zero cross signal at each zero crossing, and determining a phase-shift and DC-offset between the input-signal and filtered output-signal.

Abstract: Provided is a measuring device for measuring a distance between the measuring device and a user. The measuring device includes a distance sensor configured to generate a distance signal indicative of the distance, an IR radiation sensor configured to generate a temperature signal indicative of the IR radiation emitted by the user, and a control unit. The control unit is configured to: in a calibration mode, acquire the distance signal and the temperature signal respectively through the distance sensor and the IR radiation sensor and, on the basis of the distance signal and the temperature signal, generate a calibration curve which associates to each other values of the temperature signal with respective value of the distance; and in a calibrated mode, acquire the temperature signal through the IR radiation sensor and, on the basis of the temperature signal and the calibration curve, determine the distance.

Abstract: The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

Abstract: The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.

Abstract: The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.

Abstract: In an embodiment a microcontroller includes a processing unit and a deserial-serial peripheral interface (DSPI) module, wherein the deserial-serial peripheral interface module is coupleable to a communication bus configured to operate according to a selected communication protocol, wherein the processing unit is configured to read user data intended for inclusion in an outgoing frame encoded according to the selected communication protocol, calculate, as a function of the user data, a cyclic redundancy check (CRC) value intended for inclusion in the outgoing frame, compose the outgoing frame by including the user data and the calculated CRC value into the outgoing frame, produce a DSPI frame encoded according to the selected communication protocol as a function of the outgoing frame and program a data register of the deserial-serial peripheral interface module with the DSPI frame, and wherein the deserial-serial peripheral interface module is configured to transmit the DSPI frame via the communication bus.

Abstract: An offset-cancellation circuit having a first amplification stage with a gain of the first amplification stage and configured to receive an offset voltage of a first amplifier. A storage element is configured to be coupled to and decoupled from the first amplification stage and configured to store a potential difference output by the first amplification stage. The potential difference is determined by the offset voltage of the first amplifier and the gain of the first amplification stage. A second amplification stage is coupled to the storage element and configured to receive the potential difference from the storage element when the storage element is decoupled from the first amplification stage and configured to deliver an offset-cancellation current. The offset-cancellation current is determined by the potential difference and a gain of the second amplification stage.

Abstract: In an embodiment the method a includes performing, by an integrated circuit (IC) card hosted in a local equipment, authentication with a contactless subscriber device when the subscriber device is within a communication range of a contactless interface of the local equipment, receiving, by the IC card, an identifier (SID) identifying a software module from the subscriber device, the software module configured to enable a subscription profile for a mobile network operator, performing a checking operation at the IC card whether the SID matches a software module identifier stored in the IC card and selectively performing one of downloading the software module to the IC card, enabling the software module at the IC card or disabling the software module at the IC card as a result of performing the checking operation.

Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.