Abstract: The present disclosure is directed to a package that includes a plurality of die that are stacked on each other. The plurality of die are within a first resin and conductive layer is on the first resin. The conductive layer is coupled between ones of first conductive vias extending into the first resin to corresponding ones of the plurality of die. The conductive layer and the first conductive vias couple ones of the plurality of die to each other. A second conductive via extends into the first resin to a contact pad of the substrate, and the conductive layer is coupled to the second conductive via coupling ones of the plurality of die to the contact pad of the substrate. A second resin is on and covers the first resin and the conductive layer on the first resin. In some embodiments, the first resin includes a plurality of steps (e.g., a stepped structure). In some embodiments, the first resin includes inclined surfaces (e.g., sloped surfaces).

Abstract: A circuit for reverse battery protection includes an isolation circuit and a control circuit. The isolation is circuit coupled between a gate output of an electronic fuse (E-fuse) and at least one external metal-oxide-semiconductor field-effect transistor (MOSFET). The E-fuse is coupled between a battery voltage pin and an external ground pin and further coupled to a microcontroller. The isolation circuit is configured to disconnect the gate output from the at least one external MOSFET when the battery is installed with reverse polarity. The control circuit is coupled between the external ground pin and the at least one external MOSFET. The control circuit is configured to turn on the at least one external MOSFET when the battery is installed with the reverse polarity.

Abstract: A converter system includes a reference buffer buffering a reference input to produce a DAC reference, operating from a reference feedback voltage generated by a reference divider. A tail buffer generates a tail voltage from an input voltage generated from the DAC reference by a tail divider. An R-2R type DAC utilizes an R-2R ladder to generate a DAC output from a code. This ladder has a tail resistor coupled to the tail voltage. A feedback buffer buffers the DAC output to produce a converter reference. A DC-DC converter generates a DC output from a DC input, based upon a converter feedback voltage. A feedback divider coupled between the DC output and the converter reference generates the converter feedback voltage. Control circuitry selectively taps the reference divider to produce the reference feedback voltage (performing gain trimming) and selectively taps the tail divider to produce the input voltage (performing offset trimming).

Abstract: According to an embodiment, a digital circuit with N number of redundant flip-flops is provided, each having a data input coupled to a common data signal. The digital circuit operates in a functional mode and a test mode. During test mode, a first flip-flop is arranged as part of a test path and N?1 flip-flops are arranged as shadow logic. A test pattern at the common data signal is provided and a test output signal is observed at an output terminal of the first flip-flop to determine faults within a test path of the first flip-flop. At the same cycle, the test output signals of each of the N?1 number of redundant flip-flops is observed through the functional path to determine faults.

Abstract: A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.

Abstract: Various embodiments of the present disclosure disclose decoding techniques for mitigating data corruption due to duty cycle distortion, jitter, and other distortions to a digital signal. Decoding processes, apparatuses, and systems are provided that utilize a decoding framework for improving the accuracy of output bit streams generated from digital signals. An example process receives data indicative of a digital signal, generates a signal measurement for the digital signal that includes signal length descriptive between a two rising edges of a digital signal or two falling edges of the demodulated digital signal, and generates at least one portion of an output bit stream for the digital signal based at least in part on the signal measurement.

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A phase change memory element has a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and has a bulk zone and an active zone. The memory region is made of a germanium, antimony and tellurium based alloy, wherein germanium is in a higher percentage than antimony and tellurium in the bulk zone of the memory region. The active zone is configured to switch between a first stable state associated with a first memory logic level and a second stable state associated with a second memory logic level. The active zone has, in the first stable state, a uniform, amorphous structure and, in the second stable state, a differential polycrystalline structure including a first portion, having a first stoichiometry, and a second portion, having a second stoichiometry different from the first stoichiometry.

Abstract: A microelectromechanical weather pattern recognition system includes: at least one movement sensor, of a MEMS type, which generates a movement signal, in the presence and as a function of at least one weather pattern to be recognized; and a recognition circuitry, which is coupled to the movement sensor and which receives the movement signal; extracts given features of the movement signal; and perform processing operations, based on the given features of the movement signal, in order to recognize the weather pattern by executing at least one, appropriately trained, machine-learning algorithm.

Abstract: A device includes a local oscillator, an all-digital phase-locked loop, a digital signal generator, sampling circuitry, and an interface. The local oscillator generates a local clock signal. The all-digital phase locked loop generates a sampling control signal. The ADPLL includes a phase-error detector, a digital filter and a sigma-delta modulator. The phase detector generates a phase error signal based on a loop clock signal and a received reference signal. The digital filter generates a signal indicative of a frequency ratio between a frequency of the reference clock signal and the local clock frequency based on the phase error signal. The sigma-delta modulator generates a modulated signal based on the signal indicative of the frequency ratio. The sampling control signal is based on the modulated signal. The sampling circuitry samples digital signals generated by the digital signal generator at a sampling frequency, which is a function of the sampling control signal.

Abstract: An amplifier circuit includes a first input stage with a differential input transistor pair and a second gain stage having an output node coupled to a load. A node in the first gain stage is coupled to the output node in the second gain stage. A feedback line couples the output node to the control node of a first transistor of the differential input transistor pair. Current mirror circuitry is coupled to a current flow path through a further transistor in the second gain stage and includes a sensing node configured to produce a sensing signal indicative of the current supplied to the load. The sensing signal at the sensing node is directly fed back to the control node of the first transistor of the differential input transistor pair to provide a zero in the loop transfer function that is matched to and tracks and cancels out a load-dependent pole.

Abstract: In accordance with an embodiment, a method for operating a Pseudo-Random Pattern Generator (PRPG) based scan test system includes: generating test patterns using a Pseudo-Random Pattern Generator (PRPG), generating the test patterns including clocking the PRPG using a first clock signal; loading the test patterns into a plurality of scan chains coupled to the PRPG; modifying a bit distribution of the generated test patterns with respect to the plurality of scan chains by freezing at least one clock cycle of the first clock signal while a second clock signal is active or freezing at least one clock cycle of the second clock signal while the first clock signal is active; shifting the loaded test patterns using the second clock signal; applying the test patterns to a circuit under test (CUT) through the plurality of scan chains; and capturing response patterns generated by the CUT in the plurality of scan chains.

Abstract: An electronic circuit includes a first die, having a GaN transistor, and a second die, stacked so that an element of the second die electrically connects a first node and a second nodes of the first die respectively coupled to a conduction node and to a control node of the GaN transistor.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes output nodes generating first and second bandgap reference currents. A transconductance amplifier circuit in a current control feedback loop of the bandgap voltage generator circuit has differential inputs which receive base currents. A differential amplifier circuit has inputs configured to receive the first and second bandgap reference currents and includes a compensation current sink circuit configured to sink compensation currents from the first and second bandgap reference currents which correspond to the base current received at the differential inputs of the transconductance amplifier circuit.

Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from a magnetic field intended to be received by an antenna. A transmit circuit has an output coupled to the antenna with a modulation signal in phase with the reception signal intended to be delivered thereon. A circuit compensates for a delay of the modulation signal due to the transmit circuit and to the amplitude of the reception signal. The compensation circuit determines a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the delay.

Abstract: Disclosed herein a method for transforming a single processor system into an effective multicore system with few modifications to the existing processor. The transformation is achieved by wrapping the processor with a CPU Manager module, which intercepts all CPU transactions, remaps addresses, manages interrupt lines, and controls the CPU clock using clock gating. The transformation to n effective multicore system brings about reduced area and power impacts compared to a full duplication of the whole system, while still reusing the existing program in a multicore environment.

Abstract: A transistor device comprising a silicon-on-insulator (SOI) substrate having a plurality of polysilicon gates including a plurality of recessed gates and a plurality of non-recessed gates. The plurality of recessed gates being recessed in a top silicon layer of the SOI substrate and the plurality of non-recessed gates being on the top silicon layer. The plurality of recessed gates comprising an upper cap portion on a bottom buried portion that is in a recess of the SOI substrate. Methods of manufacturing the device are provided.

Abstract: The present description concerns a correction circuit for a bandgap circuit comprising a first bipolar transistor and a second bipolar transistor, the bandgap circuit being configured to deliver a temperature-stable DC voltage based on the first and second bipolar transistors, the correction circuit being configured to generate a correction current equal to a difference in the base currents of said first and second transistors, and inject the correction current on the emitter of one of said first and second bipolar transistors to correct an error on the temperature-stable voltage resulting from a current gain difference between said first and second bipolar transistors.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes an output node at which a bandgap reference voltage is generated. A transconductance amplifier circuit in a current control feedback loop has a differential input which receives a base current. A compensation current sink circuit operates to sink a compensation current from the output node corresponding to the base current received at the differential input of the transconductance amplifier.

Abstract: A MEMS metamaterial has a substrate and a suspended structure having an elementary cell which extends at a distance from the substrate along a first direction. The elementary cell has a first structural region having a first material with a first coefficient of thermal expansion. The first structural region has a first side facing the substrate and a second side opposite to the first side. The elementary cell also has a second structural region having a second material different from the first material and with a second coefficient of thermal expansion different from the first coefficient of thermal expansion. The second structural region extends on at least part of the first structural region, on the first side, the second side, or both the first and second side of the first structural region.