Abstract: A time-based DC-DC converter is controlled in response to a first oscillator signal based on a first control signal, a second oscillator signal based on a second control signal and a controlled current based on a feedback control signal. The first control signal and the second control signal are a function of the controlled current. The feedback control signal is generated as a function of the first and second oscillator signals by: generating at least two binary signals including a first binary signal based on a difference between the first oscillator signal and the reference signal and a second binary signal based on a difference between the second oscillator signal and the reference signal; and generating via a charge pump the feedback control signal based on the first binary signal and the second binary signal.

Abstract: A control circuit provides a drive signal to an electronic switch of an electronic converter. A first driving circuit has a first enable node receiving a first enable signal and a PWM signal generator circuit configured to provide a PWM drive signal in response to the first enable signal. A second driving circuit has a second enable node configured to receive a second enable signal and a PFM signal generator circuit configured to provide a PFM drive signal in response to the second enable signal. Logic circuitry coupled to the first and second driving circuits is configured to assert at least one of the first and second enable signals in response to a mode selection signal.

Abstract: Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.

Abstract: An audio device includes a gain step selection circuit that receives a different requested gain value and an associated requested step size from each of a plurality of sources, compares each requested gain value to a same feedback gain value and generates a polarity based thereupon, performs step polarization on each requested step size as a function of the generated polarity therefor to thereby generate a plurality of step values, and outputs a least of the plurality of step values as an output step value. An accumulator circuit generates a current input gain value based upon the output step value and the feedback gain value, and then updates the feedback gain value to be equal to the current input gain value. A normalizing circuit multiplies an input data value by the current input gain value and applies a truncation function to a result thereof to produce an output data value.

Abstract: A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

Abstract: Described herein is a lock system (e.g., for a vehicle door) including an NFC circuit in communication with a microcontroller that monitors the voltage of a battery (e.g., the vehicle battery). The microcontroller switches the NFC circuit to card emulation (CE) mode with energy harvesting capability when the battery voltage falls below a threshold so that the NFC circuit can harvest energy from a nearby Qi wireless charging field and store that harvested energy in an energy storage device. When the energy storage device is sufficiently charged, it is used power the microcontroller and an electronically actuated mechanical lock (e.g., vehicle door lock), then the microcontroller cooperates with the NFC circuit to switch the NFC circuit to NFC reader mode and attempt to verify a nearby NFC device. If the NFC device is verified, the microcontroller operates the lock, otherwise, it maintains the lock in an inactive state.

Abstract: The present disclosure relates to a cryptographic method comprising: multiplying a point belonging to a mathematical set with a group structure by a scalar by performing: the division of a scalar into a plurality of groups formed of a same number w of digits, w being greater than or equal to 2; and the execution, by a cryptographic circuit and for each group of digits, of a sequence of operations on point, the sequence of operations being identical for each group of digits, at least one of the operations executed for each of the groups of digits being a dummy operation.

Abstract: The present disclosure is directed to a device with enhanced human activity recognition. The device detects a human activity using one more motion sensors, and enhances the detected human activity depending on whether the device is in an indoor environment or an outdoor environment. The device utilizes one or more electrostatic charge sensors to determine whether the device is in an indoor environment or an outdoor environment.

Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.

Abstract: An embodiment level converter circuit is configured to receive, as a current supply, a current proportional to temperature.

Abstract: An enhancement-mode high-electron-mobility transistor comprises a structure including a stack made of III-V semiconductor materials defining an interface and capable of forming a conduction layer in the form of a two-dimensional electron gas layer; a source electrode and a drain electrode forming an electrical contact with the conduction layer; and a gate electrode arranged on top of the structure, between the source electrode and the drain electrode. The structure comprises a bar that is arranged below the gate electrode and passes through the interface of the stack. The bar comprises two semiconductor portions exhibiting opposite types of doping, defining a p-n junction in proximity to the interface.

Abstract: A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.

Abstract: A clock generator circuit includes an oscillator circuit coupled to a bias circuit. The bias circuit includes a current mirror, third and fourth transistors, and a cascode transistor. The current mirror includes a reference transistor and a set of copy transistors that are programmable. The third transistor has a source connected to a cold spot, a drain and a gate connected to this drain. The fourth transistor has a source connected to the drain of the third transistor, a drain, and a gate connected to that drain. The cascode transistor has a source connected to a drain of at least one of the copy transistors, a drain, and a gate connected to the gate of the fourth transistor. The gates of the fourth transistor and the cascode transistor are thicker than the gates of the reference transistor, each copy transistor, and the third transistor.

Abstract: An integrated circuit package includes a support plate having a mounting face. An electronic chip, having a rear face and a front face, is mounted on the mounting face with the front face electrically connected to the mounting face of the support plate. A deformable thermally conductive film covers at least one portion of the rear face of the electronic chip so that the film is in contact with the rear face.

Abstract: The present description relates to a vertical power component formed in and on a semiconductor substrate doped with a first conductivity type and coated, on the upper side thereof, with a semiconductor layer doped with the first conductivity type. The component includes: an active region (100A); and first and second groups of first concentric field limiting rings surrounding the active region. Each first ring includes a first semiconductor region doped with a second conductivity type, opposite to the first conductivity type, extending vertically into the thickness of the semiconductor layer from the upper side thereof; and a second field limiting ring laterally interposed between the first and second groups of first field limiting rings (GR). The second ring includes a second doped semiconductor region of the second conductivity type extending vertically into the thickness of the semiconductor layer from the upper face thereof.

Abstract: A memory array includes memory cells arranged in a matrix with cell rows coupled to word lines and cell columns coupled to output bit lines. A control circuit maps a first group of memory cells to a first in-memory compute operation producing computation output signals on first output bit lines from a first matrix vector multiplication of a first input vector with a first group of computation weights stored in the first group of memory cells and maps a second group of memory cells to a second in-memory compute operation producing computation output signals on second output bit lines, different from the first output bit lines, from a second matrix vector multiplication of a second input vector, different from the first input vector, with a second group of computation weights stored in the second group of memory cells. The first and second in-memory compute operations are substantially simultaneously executed.

Abstract: A sensor module includes a pattern generator configured to generate a variable frequency self-test signal. The sensor module includes an inertial sensor including a self-test electrode configured to receive the frequency sweep self-test signal. The inertial sensor is configured to generate an analog sensor signal based on the self-test signal. The sensor module includes an analog to digital converter configured to generate a digital sensor signal based on the analog sensor signal and a demodulator including a first input configured to receive the digital sensor signal, a second input configured to receive the self-test signal, and an output configured to output a demodulated signal. The sensor module includes a first low pass filter coupled to the output of the demodulator and configured to generate a baseband signal. The sensor module includes a calibration circuit configured to identify different MEMS characteristics, like resonance frequency, Q-factor, or sensitivity based on the baseband signal.

Abstract: Composite material comprising a fluoropolymer matrix and a filler formed of nanoparticles of a ceramic of the BZT-?BXT type wherein X is selected from Ca, Sn, and Mn and a is a molar fraction selected in the range between 0.10-0.90 doped with at least one doping element selected from the group consisting of Nb, La, Mn, Nd and W, wherein when X is Mn, the doping element is not Mn, wherein said nanoparticles have an average diameter comprised between 10 and 25% by weight on the total weight of the composite. The composite material is used to form a thin film usable as a piezoelectric material with inductive properties in electronic components, for example acoustic sensors such as microphones, and energy harvesting transducers.