Abstract: Systems and devices are provided to enable granular control over a retention or active state of each of a plurality of memory circuits, such as a plurality of memory cell arrays, within a memory. Each respective memory array of the plurality of memory arrays is coupled to a respective ballast driver and a respective active memory signal switch for the respective memory array. One or more voltage regulators are coupled to a ballast driver gate node and to a bias node of at least one of the respective memory arrays. In operation, the respective active memory signal switch for a respective memory array causes the respective memory array to transition between an active state for the respective memory array and a retention state for the respective memory array.

Abstract: A method and apparatus for performing dynamic current scaling of an input current of a voltage regulator are provided. The method and apparatus allow tuning current consumption in various applications, calculating a duration of an activity phase in which various algorithms are executed and activating dynamic current scaling of a regulator if the activity duration is shorter than a programmable threshold. A controller receives a threshold for an activity duration and a window size in which to evaluate the activity duration.

Abstract: An infinite impulse response filter includes a plurality of lower order filter stages and a random number generator circuit. The plurality of lower order filter stages include a first filter stage coupled to a second filter stage. The random number generator circuit includes a first output coupled to the first filter stage and a second output coupled to the second filter stage. The random number generator circuit is configured to generate the same random value at both the first output and the second output. The infinite impulse response filter is an nth-order filter. The respective order of each of the lower order filter stages is less than n.

Abstract: A method of configuring a contactless communication device is provided. The contactless communication device includes integrated circuits hosting at least two applications compatible with different communication protocols or the same communication protocol and using different communication parameters and a contactless communication circuit. The method includes stopping, by the contactless communication circuit, the transmission of answers of the contactless communication device to requests transmitted by a proximity coupling reader during a transaction initiated by the reader to cause the initiation by the reader of a new transaction.

Abstract: A voltage regulator receives an input voltage and produces a regulated output voltage. A first feedback network compares a feedback signal to a reference signal to assert/de-assert a first pulsed control signal when the reference signal is higher/lower than the feedback signal. A second feedback network compares the output voltage to a threshold signal to assert/de-assert a second control signal when the threshold signal is higher/lower than the output voltage. A charge pump is enabled if the second control signal is de-asserted and is clocked by the first pulsed control signal to produce a supply voltage higher than the input voltage. A first pass element is enabled when the second control signal is asserted and is selectively activated when the first pulsed control signal is asserted. A second pass element is selectively activated when the second control signal is de-asserted.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A method for enhancing an image and an image enhancement device are described. The method for enhancing an image including: capturing an initial image including a plurality of pixels, and performing a pixel-by-pixel dehazing operation for each of the plurality of pixels. The performing including: generating, for each of the plurality of pixels, a value for a blended gray image based on color channels of the pixel, generating, for each of the plurality of pixels, a value for a transmission map based on the blended gray image, and generating, for each of the plurality of pixels, output color channels for a processed image based on the value for the transmission map, the processed image being an enhancement of the initial image.

Abstract: A random access memory (RAM) includes an array of arranged in rows and columns. The rows of the storage elements correspond to respective memory locations of the RAM. The storage elements of a row have a common gated-clock input and respective data inputs, and each row of the array of storage elements includes a plurality of D type latches. In operation, an address input of the RAM receives a memory address identifying a memory location in the RAM. Clock gating circuitry of the RAM, generates respective gated-clock signals for the rows of the array of storage elements based on the memory address received at the address input. Memory operation are performed using storage elements of the array based on the gated-clock signals.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.

Abstract: The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.

Abstract: An electronic device capable of determining an eye convergence angle using a magnetometer sensor is provided. The magnetometer sensor is capable of reporting angle readings in three dimensions that is aligned with an eye gaze direction of each eye of a user. The magnetometer which is incorporated into the device can fit into a human eye like a contact lens and determine the angle of the gaze direction of both eyes with respect to an object within a field of view. By obtaining this eye convergence angle for an object, it is possible to accurately detect depth information. The electronic device also functions as a digital contact lens that can automatically adjust the focal point of the object to provide the user with a clear vision. The electronic device also includes a display that provides the user with additional information about the object.

Abstract: The valve is formed in a valve body housing a first path portion, a second path portion, and an coupling zone between the first and second path portions. A shutter is arranged in the coupling zone and has a shutting portion of ferromagnetic material that is deformable under the action of an external magnetic field between an undeformed position, wherein the shutter closes the coupling zone, and a deformed position, wherein the shutter at least partially frees the coupling zone. The shutting portion of the shutter is formed by a rubber membrane incorporating particles, for example of ferrite particles.

Abstract: A LDO regulator circuit comprises an input comparator and driver circuitry including transistors having a current flow path therethrough coupled to an output node of the regulator. First and second driver each comprises: driver transistors having the current flow paths therethrough coupled to the output node, capacitive boost circuitry that applies to the drive transistors a voltage-pumped replica of the comparison signal. Voltage refresh transistor circuitry coupled to the capacitive boost circuitry transfer thereon the voltage-pumped replica.

Abstract: A level-shifter circuit receives one or more input signals in an input level domain and includes provides at an output node an output signal in an output level domain shifted with respect to the input level domain. The circuit includes output circuitry including a first drive node and a second drive node that receive first and second logical signals so that the output signal has a first output level or a second output level in the output level domain as a function of at least one of the first and second logical signals. The circuit includes first and second shift capacitors coupled to the first and second drive nodes as well as capacitor refresh circuitry.

Abstract: A multi-level pulser circuit comprises a set of first input pins for receiving respective positive voltage signals at different voltage levels, a set of second input pins for receiving respective negative voltage signals at different voltage levels, and a reference input pin configured to receive a reference voltage signal intermediate the positive voltage signals and the negative voltage signals. The circuit comprises an output pin configured to supply a pulsed output signal. The circuit further comprises control circuitry configured to selectively couple the output pin to one of the first input pins, the second input pins and the reference input pin to generate the pulsed output signal at the output pin.

Abstract: The present disclosure is directed to a device and method for detection of motion events including towing of the vehicle, jacking of the vehicle, and the vehicle being hit by another object. Processing is split between an MCU and a sensor unit. After the vehicle is turned off and before the MCU enters a sleep mode, the MCU calculates a gravity vector of the vehicle using accelerometer data, calculates threshold values based on the gravity vector, and saves the threshold values. After the MCU enters the sleep mode, the sensor unit subsequently monitors and detects motion events with the saved threshold values.

Abstract: A microelectromechanical electroacoustic transducer includes a supporting frame of semiconductor material, a membrane of semiconductor material, connected to the supporting frame along a perimeter and having central symmetry, and a piezoelectric actuator on a peripheral portion of the membrane. The membrane has through slits of elongated shape arranged around a center of the membrane.

Abstract: A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.