Abstract: The disclosure concerns a method of stressing a semiconductor layer comprising: depositing, over a semiconductor on insulator (SOI) structure having a semiconductor layer in contact with an insulating layer, a stress layer; locally stressing said semiconductor layer by forming one or more openings in said stress layer, said openings being aligned with first regions of said semiconductor layer in which transistor channels are to be formed; and deforming second regions of said insulating layer adjacent to said first regions by temporally decreasing, by annealing, the viscosity of said insulator layer.

Abstract: An integrated circuit is configured for controlling automobile door lock motors. The circuit includes half-bridge driver circuits, with each half-bridge driver circuit having an output node configured to be coupled to a door lock motor. A control circuit is configured to control driver operation of the half-bridge driver circuits. A current regulator circuit senses current sourced by or sunk by at least one of the half-bridge circuits. The control circuit responds to the current regulator circuit and the sensed current by controlling the driver operation to provide for a regulated current to be sourced by or sunk by said half-bridge circuit. The control circuit further controls the half-bridge driver circuits to enter a tri-state mode in order to support the making of BEMF measurements on the motor.

Abstract: An integrated circuit includes a substrate supporting a transistor having a source region and a drain region. A high dopant concentration delta-doped layer is present on the source region and drain region of the transistor. A set of contacts extend through a pre-metal dielectric layer covering the transistor. A silicide region is provided at a bottom of the set of contacts. The silicide region is formed by a salicidation reaction between a metal present at the bottom of the contact and the high dopant concentration delta-doped layer on the source region and drain region of the transistor.

Abstract: A system and method for improving performance while transferring encrypted data in an input/output (I/O) operation are provided. The method includes receiving a block of data. The method also includes dividing the block of data into a plurality of sub-blocks of data. The method further includes performing a first operation on a first sub-block. The method also includes performing a second operation on a second sub-block at substantially the same time as performing the first operation on the first sub-block. The method still further includes reassembling the plurality of sub-blocks into the block of data.

Abstract: An embodiment of a data-read path includes a defect detector and a data-recovery circuit. The defect detector is operable to identify a defective region of a data-storage medium, and the data-recovery circuit is operable to recover data from the data-storage medium in response to the defect detector. For example, such an embodiment may allow identifying a defective region of a data-storage disk caused, e.g., by a scratch or contamination, and may allow recovering data that was written to the defective region.

Abstract: A dual-master controller includes a plurality of JTAG data registers including a controller-mode register that stores information indicating a standard JTAG or a processor-controlled mode of operation. A JTAG TAP controller receives control signals over a standard test access port and a processor controller receives processor control signals over an external processor bus. A selection multiplexer outputs either signals on the standard JTAG access port or the external processor bus responsive to a JTAG mode selection signal. A logic circuit activates the JTAG mode selection signal responsive to the force JTAG signal being active or information in the controller-mode register indicating the standard JTAG mode, and deactivates the JTAG mode selection signal responsive to the force JTAG signal being deactivated or the information in the controller-mode register indicating the processor-controller mode.

Abstract: Methods and systems are disclosed for reduced power consumption in communication networks, including sensor networks implemented according to IEEE 802.11ah, by organizing stations into groups having long sleep periods. By organizing the stations of the network into groups, the access point can match each group's traffic identification map with its target beacon transmit time. One embodiment organizes the stations sequentially by AID numbers. Other embodiments organize the stations by similar power save requirements and/or nearby geographical location. Forms of an Extended Traffic Identification Map are matched with an awaken Target Beacon Transmit Time of the group.

Abstract: An ashing chemistry employing a combination of Cl2 and N2 is provided, which removes residual material from sidewalls of a patterned metallic hard mask layer without residue such that the sidewalls of the patterned metallic hard mask layer are vertical. The vertical profiled of the sidewalls of the patterned metallic hard mask layer can be advantageously employed to reduce pattern factor dependency in the etch bias between the pattern transferred into an underlying layer and the pattern as formed on the metallic hard mask layer. Further, the ashing chemistry can be employed to enhance removal of stringers in vertical portions of a metallic material layer.

Abstract: A system and method for improved upstream data transmission. In an embodiment, a cable modem includes a transceiver configured for transmitting data upstream once permission is granted. In between times when permission to transmit is granted, however, the cable modem is configured to prepare as much data as possible for immediate upstream transmission once that very permission is granted. Thus, prior to permission being granted, the cable modem assembles (pre-processes) the data into transmit frames such that the data frames may be stored in a local memory coupled to the transceiver in a “ready-to-go” format. In this manner, the entire amount of time/bandwidth allocated to the cable modem in response to its request for upstream data transmission may be dedicated to actually transmitting data upstream as opposed to consuming time and bandwidth processing the data into data frames after upstream data transmission has been granted.

Abstract: A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission columns arranged in the same pattern as the first transmission columns. The first and second transmission columns are each coplanar with a first surface and a second surface of the first and second die, respectively.

Abstract: An integrated circuit (IC) device includes an IC die and encapsulation material surrounding the IC die. A first set of leads is coupled to the IC die and has first contact pads exposed on a bottom surface of the encapsulation material adjacent its periphery. A second set of leads is coupled to the IC die and has second contact pads exposed on the bottom surface of the encapsulation material adjacent its periphery. The second set of leads has internal ends extending laterally inwardly from respective ones of the second contact pads to define a die pad area supporting the IC die.

Abstract: A method and apparatus for acquiring a corrected digital image of an object includes a digital camera operable to capture a plurality of color component images, an imager body and a support arm. The support arm is coupled to the imager body and adapted to support the digital camera. An image processor is provided to produce corrected color component images and an image combiner is provided to combine the corrected color component images to form the corrected digital image. The camera is moveable to more than one position to enable to formation of three-dimensional images or images with increased depth of focus.

Abstract: One or more embodiments of the disclosure concerns a method of forming a stressed semiconductor layer involving: forming, in a surface of a semiconductor structure having a semiconductor layer in contact with an insulator layer, at least two first trenches in a first direction; introducing, via the at least two first trenches, a stress in the semiconductor layer and temporally decreasing, by annealing, the viscosity of the insulator layer; and extending the depth of the at least two first trenches to form first isolation trenches in the first direction delimiting a first dimension of at least one transistor to be formed in the semiconductor structure.

Abstract: A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate, and a gate overlying the semiconductor fins. The gate has a tapered outer surface. A first pair of sidewall spacers is formed adjacent the gate an exposed tapered outer surface is also defined. Portions of the gate are removed at the exposed tapered outer surface to define a recess. A second pair of sidewall spacers is formed covering the first pair of sidewall spacers and the recess. Source/drain regions are formed on the semiconductor fins.

Abstract: Dummy gates are removed from a pre-metal layer to produce a first opening (with a first length) and a second opening (with a second length longer than the first length). Work function metal for a metal gate electrode is provided in the first and second openings. Tungsten is deposited to fill the first opening and conformally line the second opening, thus leaving a third opening. The thickness of the tungsten layer substantially equals the length of the first opening. The third opening is filled with an insulating material. The tungsten is then recessed in both the first and second openings using a dry etch to substantially a same depth from a top surface of the pre-metal layer to complete the metal gate electrode. Openings left following the recess operation are then filled with a dielectric material forming a cap on the gate stack which includes the metal gate electrode.

Abstract: A filter in a DOCSIS bridge performs IP Filtering of incoming Ethernet packets in hardware. The filter includes a parser circuit which, in hardware, parses each of the incoming Ethernet packets and then utilizes the parsed information in combination with a content-addressable memory (CAM) that stores filtering information, to filter and route the incoming Ethernet packets. Detailed statistical data may also be generated to provide information on the type of filtering being performed by the DOCSIS bridge.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: An instrumentation amplifier includes first and second resistors for gain setting. The operational amplifiers within the instrumentation amplifier include selectively enabled current drive sources coupled to the amplifier output. The first and second resistors have variable resistances. A control circuit is configured to select the variable resistances of the first and second resistors to implement a fixed gain for the instrumentation amplifier and further selectively enable the current drive sources. The control circuit receives an indication of a downstream programmable gain (for example, from a downstream programmable gain amplifier). The variable resistances of the first and second resistors are selected to be scaled inversely with respect to the downstream programmable gain and the current drive sources are enabled proportionately with respect to the downstream programmable gain.

Abstract: A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.

Abstract: A resistive random access memory (RRAM) structure is formed on a supporting substrate and includes a first electrode and a second electrode. The first electrode is made of a silicided fin on the supporting substrate and a first metal liner layer covering the silicided fin. A layer of dielectric material having a configurable resistive property covers at least a portion of the first metal liner. The second electrode is made of a second metal liner layer covering the layer of dielectric material and a metal fill in contact with the second metal liner layer. A non-volatile memory cell includes the RRAM structure electrically connected between an access transistor and a bit line.