Abstract: Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.

Abstract: An embodiment method comprises applying domain transformation processing to a time-series of signal samples, received from a sensor coupled to a dynamical system, to produce a dataset of transformed signal samples therefrom, buffering the transformed signal samples, obtaining a data buffer having transformed signal samples as entries, computing statistical parameters of the data buffer, producing a drift signal indicative of the evolution of the dynamical system as a function of the computed statistical parameters, selecting transformed signal samples buffered in the data buffer as a function of the drift signal, applying normalization processing to the buffered transformed signal samples, applying auto-encoder artificial neural network processing to a dataset of resealed signal samples, and producing a dataset of reconstructed signal samples and calculating an error of reconstruction.

Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

Abstract: An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

Abstract: An in-memory computation device performs a multiply-and-accumulate (MAC) operation. A computation array includes groups of memory cells coupled to a bitline, each group storing a computational weight and having a positive cell flowing a positive-cell current and a negative cell flowing a negative-cell current which are a function of a total current and the sign and absolute value of the respective computational weight. A row-activation circuit receives an input signal and provides, for each input value, during an elaboration interval, a positive-activation signal having a positive-activation duration and a negative-activation signal having a negative-activation duration, the durations being a function of an elaboration duration and of the sign and absolute value of the respective input value. A column-elaboration circuit samples bitline current and provides, in response thereto, at least one output signal.

Abstract: An electronic device receives data including an application update module for an application program, the application update including a first part, the first part including first update information and an indication value. A processor of the electronic device then compares the first update information with reference information associated with the indication value and stored in a memory of the electronic device. The processor then installs a second part of the application update module when the first update information corresponds to the reference information, thereby producing an updated application program.

Abstract: A bidirectional PFC system includes a high-frequency branch with a first transistor connected between an IO node and a high-frequency tap, and a second transistor connected between the high-frequency tap and a reference node, and a low-frequency branch with a first thyristor connected between the IO node and a low-frequency tap, and a second thyristor connected between the low-frequency tap and the reference node. An inductor is connected between the first node and the high-frequency tap. A first capacitor is connected between the first node and the low-frequency tap. The first node and the low-frequency tap are coupled to input terminals. A control circuit generates first and second gate drive signals for the transistors so as to modify an AC signal at the input terminals such that the AC current falls below a holding current of the second thyristor prior to zero crossing of the AC voltage.

Abstract: Described herein is a lock system (e.g., for a vehicle door) including an NFC circuit in communication with a microcontroller that monitors the voltage of a battery (e.g., the vehicle battery). The microcontroller switches the NFC circuit to card emulation (CE) mode with energy harvesting capability when the battery voltage falls below a threshold so that the NFC circuit can harvest energy from a nearby Qi wireless charging field and store that harvested energy in an energy storage device. When the energy storage device is sufficiently charged, it is used power the microcontroller and an electronically actuated mechanical lock (e.g., vehicle door lock), then the microcontroller cooperates with the NFC circuit to switch the NFC circuit to NFC reader mode and attempt to verify a nearby NFC device. If the NFC device is verified, the microcontroller operates the lock, otherwise, it maintains the lock in an inactive state.

Abstract: Disclosed herein is a testing circuit for indirectly testing generation of a power-on-reset signal within an integrated circuit (IC). The testing circuit includes a switch configured to selectively disconnect an internal circuit from a test pin of the IC in response to start-up of the IC, a plurality of resistors connected between the test pin and a respective plurality of switches that are configured to selectively connect ones of the plurality of resistors to ground in response to corresponding control signals, and a control circuit configured to produce, at the test pin, a resistance indicative of status of generation of the POR signal by selectively operating the plurality of switches based upon statuses of a plurality of signals from which the POR signal is generated.

Abstract: A sense amplifier circuit includes first, second inputs coupled to first, second memory sensing nodes, respectively. A sensing circuit operates to sense a differential signal between the first, second inputs. A first boosting capacitor has a first terminal coupled to the first input and a second terminal coupled to a switchable node. A second boosting capacitor has a first terminal coupled to the second input and a second terminal coupled to the switchable node. Control circuitry operates, responsive to a bitline boost activation signal having a first value, to couple the first terminals of the first, second boosting capacitors to a regulated supply voltage and drive the switchable node to ground. Responsive to the bitline boost activation signal having a second value, the first terminals of the first, second boosting capacitors are decoupled from the regulated supply voltage and the switchable node is driven to the regulated supply voltage.

Abstract: A heterojunction power device includes: a substrate containing semiconductor material; a first active area and a second active area, arranged on the substrate symmetrically opposite with respect to an axis of symmetry and accommodating respective heterostructures; a separation region, extending along the axis of symmetry between the first active area and the second active area. The power device further includes: a first conductive bus configured to distribute a first electric potential of the power device in parallel to the first and the second active areas; a second conductive bus configured to distribute a second electric potential of the power device, different from the first electric potential, in parallel to the first and the second active areas. The first and the second conductive buses extend along the axis of symmetry above the separation region and the second conductive bus overlies the first conductive bus.

Abstract: A method detects replicas of satellite signals in a GNSS receiver. The satellite signals are transmitted from a plurality of satellites of a constellation of satellites. The method includes navigation processing procedure performed at the GNSS receiver. The method includes receiving at least one of the satellite signals, and for the at least one of the received satellite signals. The method includes dumping in-phase and quadrature components from a correlation procedure of a tracking process of the satellite signals, generating a plurality of delayed signals including the in-phase and quadrature components, and generating a coherently accumulated signal from the delayed signals. The method includes transforming the coherently accumulated signal to a frequency domain signal, generating a bi-dimensional map from the frequency domain signal, and determining whether or not the satellite signals are affected by replicas based on analysis of the bi-dimensional map.

Abstract: A device includes global positioning circuitry, sensing circuitry, and processing circuitry. The global positioning circuitry, in operation, receives location-related data. The sensing circuitry, in operation, senses data related to the device. The processing circuitry, in operation, determines a motion state of the electronic system based on data sensed by the sensing circuitry, and selects a plurality of control parameters from one or more configuration matrixes based on the determined motion state. The plurality of control parameters includes a power-mode control parameter and a location-determination control parameter. The processing circuitry configures a power-mode of the device based on the power-mode control parameter, and determines a location characteristic of the device based on the received location-related data and the location-determination control parameter.

Abstract: An in-memory computation device performs a multiply-and-accumulate (MAC) operation. A computation array includes groups of memory cells coupled to a bitline, each group storing a computational weight and having a positive cell flowing a positive-cell current and a negative cell flowing a negative-cell current which are a function of a total current and the sign and absolute value of the respective computational weight. A row-activation circuit receives an input signal and provides, for each input value, during an elaboration interval, a positive-activation signal having a positive-activation duration and a negative-activation signal having a negative-activation duration, the durations being a function of an elaboration duration and of the sign and absolute value of the respective input value. A column-elaboration circuit samples bitline current and provides, in response thereto, at least one output signal.

Abstract: A voltage regulator has a first output is connected to a capacitive element. A current source is coupled between the first output and a first node receiving a power supply voltage. The current source delivers a first DC current in response to assertion of a first binary signal. A comparator asserts a second binary signal when a first voltage on the first output is lower than a set point voltage. A first circuit controls assertion of the first signal for a first fixed time period when the second binary signal is asserted.

Abstract: The present disclosure is directed to a fully analog voltage regulator circuit with reference modulation. The voltage regulator circuit includes a low-dropout regulator, a voltage-to-current convert, a resistor-capacitor filter circuit, and an operational amplifier voltage buffer. The voltage regulator circuit minimizes dropout voltage of the circuit by comparing the output voltage of the voltage regulator to a reference voltage and adjusting the output voltage of the op amp voltage buffer, accordingly. The voltage regulator circuit includes two operational amplifiers, wherein the negative input of a first of the two operational amplifiers is coupled to the negative input of a second of the two operational amplifiers through the resistor-capacitor filter circuit.

Abstract: First, second input terminals of a sense amplifier are coupled to first, second memory sensing nodes. A first input transistor has a channel arranged between a first comparator input and a first comparator output, and a control terminal at a bias node. A second input transistor has a channel arranged between a second comparator input and a second comparator output, and a control terminal at a bias node. The first and second comparator inputs are selectively couplable to each other, in response to compensation signal assertion, or to the first and second input terminals, in response to compensation signal de-assertion. The bias node is selectively couplable to a comparator biasing node in response to bias enable assertion, or is floating in response to the bias enable de-assertion. A sensing circuit produces a read signal as a function of a difference between first, second currents at the comparator outputs.

Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.

Abstract: A device includes a bipolar transistor. The bipolar transistor includes: a collector region, a base region, and an emitter region. A first metallization is in contact with the emitter region, a second metallization is in contact with the base region, and a third metallization is in contact with the collector region. A first connection element is coupled to the first metallization and has dimensions, in a plane of the interface between the first metallization and the connection element, greater than dimensions of the first metallization. A second connection element is coupled to the second metallization and passes through spacers, which at least partially cover the second metallization, surrounding the emitter region. A third connection element is coupled to the third metallization and passes through spacers, which at least partially cover the third metallization, surrounding the base region.

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region in the semiconductor substrate providing a source and a second doped region buried in the semiconductor substrate providing a body. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region and a gate bridge over the polyoxide region. At a first region the gate bridge has a first thickness, and at a second region the gate bridge has a second thickness (greater than the first thickness). At the second region, a gate contact is provided at each trench to extend partially into the second thickness of the gate bridge.