Abstract: A photosensitive diode has an anode terminal and a cathode terminal. A passive quench resistance circuit includes a resistor with a variable resistance that is controlled by a control signal. The resistor is electrically connected to the cathode terminal. The resistor of the passive quench resistance circuit is formed by a first semiconductor region. The control signal is applied to a control gate of the passive quench resistance circuit. The control gate is formed by a second semiconductor region that is insulated from the first semiconductor region and extends parallel to the first semiconductor region. The voltage of the control signal applied to the control gate controls the variable resistance.

Abstract: A circuit may include an array of single photon avalanche diode (SPAD) cells, each SPAD cell configured to be selectively enabled by an activation signal. The circuit may include a control circuit configured to selectively enable a subset of the array of SPAD cells based on a measured count rate of the array of SPAD cells.

Abstract: A directional loudspeaker system has a loudspeaker arrangement configured to generate N audio signals. A time-of-flight sensor arrangement is configured to detect a location of a user. A controller is configured to use information from the time-of-flight sensor arrangement about the location of the user to control the delay such that the N audio signals constructively interfere at the location of the user.

Abstract: A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Abstract: An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.

Abstract: An electronic device includes a time-of-flight sensor configured to sense a distance between the electronic device and at least one object proximate the electronic device. Processing circuitry is coupled to the time-of-flight sensor and controls access to the electronic device based on the sensed distance. The electronic device may include a digital camera that the processing circuitry controls to perform facial or iris recognition utilizing the sensed distance from the time-of-flight sensor.

Abstract: A device such as a laser diode is provided with a monitoring arrangement. The monitoring arrangement has voltage to current converters arranged to provide respectively currents which are proportional to the respective voltages on an anode and on a cathode of the laser diode. The monitoring arrangement provides a first output signal when the laser diode is on too long. That output signal is used to cause the laser diode to be switched off.

Abstract: A ranging apparatus includes a first array with first light sensitive detectors configured to receive light which has been reflected by an object and generate an output. A second array, spaced apart from the first array by a spacing distance, is further included, the second array having second light sensitive detectors. The second array is configurable to either receive light which has been reflected by the object or to be a reference array and generate an output. A processor operates to determine a distance to the object in response to the outputs from the first and the second arrays.

Abstract: An apparatus includes an illumination source configured to emit light when driven with a current greater than a threshold current and driver circuitry configured to drive the illumination source with a controllable current. The driver circuit controlled by at least a first input value. At least one illumination detector is configured to detect light emitted by the illumination source and monitor circuitry is configured to receive an output from the illumination detector and provide the first input value.

Abstract: Disclosed herein is an electronic device including an integrated circuit substrate, with a pixel array area within the integrated circuit substrate. A first deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the pixel array area. First, second, third, and fourth pixels are within the pixel array area and spaced apart from one another. A storage capacitor area is within the integrated circuit substrate and interior to the first deep trench isolation structure. A second deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the storage capacitor area. The second deep trench isolation structure may serve to electrically isolate the storage capacitor area from the first, second, third, and fourth pixels.

Abstract: A system is configured to capture a set of interrupts and output the interrupts serially onto an interconnect. The interrupts, which are routed to a destination, may first be packetized such that additional information is associated with the interrupt within the packet.

Abstract: A semiconductor on insulator substrate includes a semiconductor support layer, a buried insulating layer over the semiconductor support layer and an epitaxial semiconductor layer over the buried insulating layer. A deep trench isolation penetrates completely through the epitaxial semiconductor layer to the buried insulating layer to electrically insulate a first region of the epitaxial semiconductor layer from a second region of the epitaxial semiconductor layer. A single photon avalanche diode (SPAD) includes an anode formed by the first region of the epitaxial semiconductor layer and a cathode formed by a well located within the first region of the epitaxial semiconductor layer. An ancillary circuit for the SPAD is located in the second region of the epitaxial semiconductor layer and electrically coupled to the SPAD.

Abstract: An embodiment circuit includes a diode having a first terminal coupled to a first reference voltage; a first controllable switch coupled between a second terminal of the diode and a second reference voltage; and a capacitive element having a first terminal coupled to the first reference voltage and a second terminal controllably coupled to the second terminal of the diode.

Abstract: A range detector device may include a pulsed light source configured to emit pulsed light to an object, a detector configured to receive reflected pulsed light from the object, and a processor cooperating with the pulsed light source and the detector. The processor may be configured to generate a measured range value to the object, and generate an estimated statistical value for a spread of possible range values based upon a characteristic of the pulsed light source.

Abstract: A light system includes at least one time-of-flight image sensor configured to generate at least one zone distance measurement. At least one control unit is configured to receive the at least one zone distance measurement and to generate at least one control signal based on the at least one zone distance measurement. At least one light unit is configured to adapt an output of the light unit based on the at least one control signal.

Abstract: An electronic device includes a first integrated circuit die having formed therein photodiodes and readout circuitry for the photodiodes, with the readout circuitry including output pads exposed on a surface of the first integrated circuit die. A second integrated circuit die has formed therein storage capacitor structures for the photodiodes and digital circuitry for performing image processing on data stored in the storage capacitor structures, with the storage capacitor structures including input pads exposed on a surface of the second integrated circuit die. The first and second integrated circuit die are in a face to face arrangement such that the output pads of the first integrated circuit die face the input pads of the second integrated circuit die. An interconnect couples the output pads of the first integrated circuit die to the input pads of the second integrated circuit die.

Abstract: A method disclosed herein includes operating a processor of a system on a chip in a configuration mode until completion of a set of tasks, and operating the processor in a normal operation mode after completion of the set of tasks. During the configuration mode, the method includes performing steps of sending by the processor of configuration information to a configuration programming block, sending by the configuration programming block of the configuration information to one or more electronic components to thereby complete a first subset of the set of tasks, while permitting the processor to complete a second subset of the set of tasks, and sending by the configuration programming block of a notification to the processor after completing the first subset of the set of tasks.

Abstract: A diffractive optical element (DOE) is designed to implement both a collimation function with respect to an input divergent beam and a beam shaping function with respect to an output divergent beam. The phase designs of the collimation function and the beam shaping function are independently produced in the phase domain. These phase designs are then combined using a phase angle addition of the individual functions and wrapped between 0 and 2? radians. The diffractive surface of the DOE is then defined from the wrapped phase angle addition of the individual functions.

Abstract: A method can be used to manufacture a charge storage cell with a first trench and a second trench in a substrate material. The first trench is filled with a doped material. The second trench is filled with a second trench material. The method includes causing the dopant to diffuse from the first trench to thereby provide a doped region adjacent to the first trench. The material from the first and second trenches is removed and at least one of the trenches is filled with a capacitive deep trench isolation material to provide capacitive deep trench isolation.

Abstract: An electronic device includes at least one photodetection block, where the at least one photodetection block includes a plurality of macropixels arranged into an array. Each macropixel includes an array of photodiodes, with logic circuitry coupled to outputs of the array of photodiodes and configured to generate a detection signal as a function of logically combining the outputs of the array of photodiodes. Each macropixel has associated therewith selection circuitry configured to selectively pass the detection signal to output combining logic or to output combining logic of at least one neighboring macropixel of the plurality thereof. The output combining logic has inputs coupled to the selection circuitry and to the selection circuitry of the at least one neighboring macropixel, and is configured to generate an output detection signal as a function of logically combining outputs of the selection circuitry and the selection circuitry of the at least one neighboring macropixel.