Abstract: A transmit integrated circuit includes a light source configured to generate a beam of light. A receive integrated circuit includes a first photosensor. A transmit optic is mounted over the transmit and receive integrated circuits. The transmit optic is formed by a prismatic light guide and is configured to receive the beam of light. An annular body region of the transmit optic surrounds a central opening which is aligned with the first photosensor. The annular body region includes a first reflective surface defining the central opening and further includes a ring-shaped light output surface surrounding the central opening. Light is output from the ring-shaped light output surface in response to light which propagates within the prismatic light guide in response to the received beam of light and which reflects off the first reflective surface.

Abstract: The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

Abstract: An embodiment method of operating an imaging device including a sensor array including a plurality of pixels, includes: capturing a first low-spatial resolution frame using a subset of the plurality of pixels of the sensor array; generating, using a processor coupled to the sensor array, a first depth map using raw pixel values of the first low-spatial resolution frame; capturing a second low-spatial resolution frame using the subset of the plurality of pixels of the sensor array; generating, using the processor, a second depth map using raw pixel values of the second low-spatial resolution frame; and determining whether an object has moved in a field of view of the imaging device based on a comparison of the first depth map to the second depth map.

Abstract: The present disclosure is directed to a diode including a first doped structure, doped with a first type of material and forming at least part of an isolation structure for the diode; at least one contact structure located within the first doped structure, the at least one contact structure forming one of the cathode or anode of the diode; a second doped structure, doped with a second type of material, and forming at least one depletion region or PN junction with the first doped structure; at least one second contact structure located within the second doped structure, the at least one second contact structure forming the other of the anode or the cathode of the diode; at least one further contact structure, doped with the first type of material, the at least one further contact structure forming at least one further depletion region or further PN junction, such that the at least one further depletion region is configured to steer charge from the at least one depletion region and thus decrease the sensitivity

Abstract: An example device has optical emitters for emitting incident radiation within a field of view and optical detectors for receiving reflected radiation. Based on the incident radiation and the reflected radiation, a histogram indicative of a number of photon events that are detected by the optical detectors over time bins is generated. The time bins is indicative of time differences between emission of the incident radiation and reception of the reflected radiation. The device further includes; a processor programmed to iteratively process the histogram by executing an expectation-maximization algorithm to detect a presence of objects located in the field of view of the device.

Abstract: In some embodiments, a ToF sensor includes an illumination source module, a transmitter lens module, a receiver lens module, and an integrated circuit that includes a ToF imaging array. The ToF imaging array includes a plurality of SPADs and a plurality of ToF channels coupled to the plurality of SPADs. In a first mode, the ToF imaging array is configured to select a first group of SPADs corresponding to a first FoV. In a second mode, the ToF imaging array is configured to select a second group of SPADs corresponding to a second FoV different than the first FoV.

Abstract: The present disclosure relates to receiving an input signal; generating an output signal by integrating a leaked signal over an integration time, wherein the leaked signal is obtained based on a dampening signal, a leak factor and the input signal; and providing the output signal.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: The present disclosure relates to a sensor comprising: an array of photodetectors comprising a first subarray of at least one photodetector and a second subarray of at least one photodetector; a first optical arrangement to direct incoming photons toward the first subarray; and a second optical arrangement to direct incoming photons toward the second subarray.

Abstract: In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.

Abstract: A device such as a laser diode is provided with a monitoring arrangement. The monitoring arrangement has voltage to current convertors arranged to provide respectively currents which are proportional to the respective voltages on an anode and on a cathode of the laser diode. The monitoring arrangement provides a first output signal when the laser diode is on too long. That output signal is used to cause the laser diode to be switched off.

Abstract: The disclosure concerns a housing for a light source mounted on a substrate, the housing comprising: a molded body having an opening permitting the passage of a light beam generated by the light source; one or more surfaces for receiving a diffuser; and first and second conducting pins traversing the molded body.

Abstract: A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.

Abstract: An optical sensor includes pixels. Each pixel has a photodetector and a semiconductor guard ring around the photodetector. The photodetector and the semiconductor guard ring are dimensioned so that a fill factor of the pixel is less than or equal to 50%.

Abstract: In an embodiment, a TDC includes: a clock input configured to receive a reference clock that is synchronized with a first event; a clock generation circuit configured to generate a first clock at a first output of the clock generation circuit based on the reference clock, the first clock having a second frequency lower than the reference clock; a data input configured to receive an input stream of pulses, where the input stream of pulses is based on the first event; a sampling circuit having an input register, the sampling circuit coupled to the data input, the sampling circuit configured to continuously sample the input stream of pulses into the input register based on the reference clock; and output terminals configured to stream time stamps based on the input stream of pulses at the second frequency, where the stream of time stamps is synchronized with the first clock.

Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.

Abstract: An integrated circuit includes a substrate and at least one photo-voltaic cell implemented on the substrate. The at least one photo-voltaic cell is configured to generate a supply voltage. Circuitry is implemented on the substrate. The circuitry is powered by the supply voltage. The at least one photo-voltaic cell can include a number of series-connected photo-voltaic cells.

Abstract: An apparatus includes a single photon avalanche diode pixel that includes a single photon avalanche diode and an output transistor configured to provide an analog output current from the single photon avalanche diode. The single photon avalanche diode pixel is configured to operate in a first mode to output a digital single photon detection event. The single photon avalanche diode pixel is further configured to operate in a second mode to output the analog output current indicating a level of illumination of the pixel.

Abstract: An embodiment method for enhancing the intrinsic spatial resolution of an optical sensor includes projecting, by an optical source of the optical sensor, a plurality of illumination patterns onto an object and detecting, by an optical detector of the optical sensor, reflected radiation for each of the plurality of illumination patterns. The method further includes generating, by a processor of the optical sensor, a plurality of sub-images, where each sub-image corresponds to a respective illumination pattern of the plurality of illumination patterns, each sub-image having a first image resolution. The method additionally includes reconstructing, by the processor and from the plurality of sub-images, an image having a second image resolution, the second image resolution being finer than the first image resolution.

Abstract: An electronic device, comprising: a support plate having a rear face and a front face; an electronic integrated circuit chip having a rear face mounted on the front face of the support plate and including an optical component in a front face; and a sleeve forming a traversing passage and having a rear edge and a front edge at the opposite ends of the traversing passage, the rear edge being mounted on the front face of the chip, in such a position that the optical component of the chip is facing the traversing passage of the sleeve.