Abstract: An optical device is mounted to an electronic circuit having a main face with at least one light source. The optical device is made from a block which includes, for each light source, a corresponding opening that passes through the block. The opening includes a cylindrical part with a threading on an inside surface.

Abstract: An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.

Abstract: A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.

Abstract: Various embodiments provide optical lenses that include phase shift layers that transmit incident light with four or more distinct phase quantizations. In one embodiment, a lens includes a substrate, a first immersion material layer on the substrate, and a plurality of anti-reflective phase shift layers on the first immersion material layer. The phase shift layers define a first anti-reflective phase shift region that transmits received light without a phase shift, a second anti-reflective phase shift region configured to transmit the received light with a first phase shift, a third anti-reflective phase shift region configured to transmit the received light with a second phase shift, and a fourth anti-reflective phase shift region configured to transmit the received light with a third phase shift. The first, second, and third phase shifts are different from one another.

Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

Abstract: An indirect time of flight sensor includes a matrix of pixels, wherein each pixel includes at least two controllable transfer devices. First conductive lines transmit first control signals to the transfer devices, these first signals being provided by a first circuit. A device is provided for illuminating a scene that is divided into at least two first areas. The device successively illuminates each first area. The matrix is similarly divided into at least two second areas. The matrix and illumination device are disposed such that each first area corresponds to one second area. The first circuit provides different first signals to the different second areas.

Abstract: An optical module includes an optical detector, laser emitter, and first and second support structures, each carried by a substrate. An optical layer includes first and second fixed portions carried by the support structures, a movable portion affixed between the fixed portions by a spring structure, and a lens system carried by the movable portion, the lens system including an objective lens and a beam shaping lens. The optical layer includes a comb drive with a first comb structure extending from the first fixed portion to interdigitate with a second comb structure extending from the movable portion, a third comb structure extending from the second fixed portion to interdigitate with a fourth comb structure extending from the movable portion, and actuation circuitry applying voltages to the comb structures to cause the movable portion of the optical layer to oscillate back and forth between the fixed portions.

Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.

Abstract: Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.

Abstract: In an embodiment, a method includes: providing a gray-coded time reference to a time-to-digital converter (TDC); receiving an event from an event signal; latching the gray-coded time reference into a memory upon reception of the event signal; and updating a time-of-flight (ToF) histogram based on the latched gray-coded time reference.

Abstract: The present disclosure relates to a method of laser safety verification for a depth map sensor, comprising illuminating, during a first illumination phase, using a laser illumination system, a first cluster of one or more first pixels of a pixel array of the depth map sensor, while not illuminating a second cluster, different from the first cluster, of one or more second pixels of the pixel array of the depth map sensor; and detecting, during the first illumination phase, a level of illumination of the second cluster.

Abstract: A pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quenching element, with the SPAD having a capacitance at its anode formed from a deep trench isolation, with the quenching element having a sufficiently high resistance such that the capacitance is not fully charged when the SPAD is struck by an incoming photon. The pixel includes a clamp transistor configured to be controlled by a voltage clamp control signal to clamp voltage at an anode of the SPAD when the SPAD is struck by an incoming photon to be no more than a threshold clamped anode voltage, and readout circuitry coupled to receive the clamped anode voltage from the clamp transistor and to generate a pixel output therefrom. The threshold clamped anode voltage is below a maximum operating voltage rating of transistors forming the readout circuitry.

Abstract: The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.

Abstract: A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.

Abstract: An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: An image projection device, such as a pico projector or LCD projector, includes image projection circuitry configured to generate a light beam having a power. The image projection circuitry projects the light beam onto and focuses the light beam on a projection surface located an imaging distance from the image projection circuitry. A time-of-flight sensor is configured to sense the imaging distance between the image projection circuitry and the projection surface and to generate an imaging distance signal indicating the sensed imaging distance. Control circuitry is coupled to the image projection circuitry and to the time-of-flight sensor and is configured to adjust the power and the focus of the light beam based upon the imaging distance signal.

Abstract: The present disclosure relates to receiving an input signal; generating an output signal by integrating a leaked signal over an integration time, wherein the leaked signal is obtained based on a dampening signal, a leak factor and the input signal; and providing the output signal.

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

Abstract: In an embodiment of the present invention, a method for controlling a voltage across a single photon avalanche diode includes: providing an output based on a current flowing through the single photon avalanche diode; and controlling the voltage applied across the single photon avalanche diode based on the provided output.