Abstract: The present disclosure relates to an electronic device comprising: at least one universal integrated circuit card or at least one secure element and at least one power supply circuit for said card or secure element, said power supply circuit being connected to at least a first power supply voltage source of the electronic device and comprising a voltage detector adapted to determine whether said first voltage source provides a first power supply voltage different from a reference voltage; and at least one near field communication module adapted to enter an active mode whenever said voltage detector determines that said first supply voltage is different from the reference voltage.

Abstract: The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.

Abstract: An integrated circuit includes a substrate, an interconnection part, and an isolating region located between the substrate and the interconnection part. A decoy structure is located within the isolating region and includes a silicided sector which is electrically isolated from the substrate.

Abstract: Series of first ramps and second ramps are generated. A circuit delivers a first signal representative of the comparison of each first ramp with a set point and delivers a second signal representative of the comparison of each second ramp with the set point. Based on the first and second signals: a first ramp is stopped and a second ramp is started when the first ramp reaches the set point, and a second ramp is stopped and a first ramp is started when the second ramp reaches the set point. The value of the set point is modulated in response a maximum value of the first/second last ramp compared with the set point.

Abstract: A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.

Abstract: A device includes image generation circuitry and convolutional-neural-network circuitry. The image generation circuitry, in operation, generates a digital image representation of a wafer defect map (WDM). The convolutional-neural-network circuitry, in operation, generates a defect classification associated with the WDM based on the digital image representation of the WDM and a data-driven model generated using an artificial wafer defect digital image (AWDI) data set and associating AWDIs with classes of a defined set of classes of wafer defects. A wafer manufacturing process may be controlled based on the classifications of WDMs.

Abstract: The present description concerns an electronic device including: a modulator-demodulator circuit; a first integrated circuit implementing a first subscriber identification module; and at least one second integrated circuit intended to implement a second subscriber identification module, wherein a sequencing terminal of the first circuit and a sequencing terminal of the second circuit are connected to a same sequencing terminal of the modulator-demodulator circuit.

Abstract: An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

Abstract: An embodiment method for converting an initial digital image into a converted digital image, electronic chip, system and computer program product are disclosed, the initial digital image comprising a set of pixels, the pixels being associated respectively with colors, the initial digital image being acquired by an acquisition device, and the converted digital image able to be used by a neural network. The embodiment method comprises redimensioning of the initial digital image in order to obtain an intermediate digital image, the redimensioning being carried out by a reduction in the number of pixels of the initial image, modification of a format of one of the pixels of the intermediate digital image in order to obtain a converted digital image, the modification being carried out, after the redimensioning, by increasing the number of bits used to represent the color of the pixel.

Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

Abstract: A one-time programmable memory cell includes a transistor coupled to a capacitor. The transistor includes at least one first conductive gate element arranged in at least one first trench formed in a semiconductor substrate, and at least one first channel portion buried in the substrate and extending at the level of at least a first lateral surface of the at least one first conductive gate element. The capacitor includes a capacitive element forming a memory. The at least one first channel portion is electrically coupled to an electrode of the capacitive element.

Abstract: A method for manufacturing an electronic device includes locally implanting ionic species into a first region of a silicon nitride layer and into a first region of an electrically insulating layer located under the first region of the silicon nitride layer. A second region of the silicon nitride layer and a region of the electrically insulating layer located under the second region of the silicon nitride layer are protected from the implantation. The electrically insulating layer is disposed between a semi-conducting substrate and the silicon nitride layer. At least one trench is formed extending into the semi-conducting substrate through the silicon nitride layer and the electrically insulating layer. The trench separates the first region from the second region of the electrically insulating layer. The electrically insulating layer is selectively etched, and the etch rate of the electrically insulating layer in the first region is greater than the etch rate in the second region.

Abstract: An embodiment subscriber identification module includes a first communication interface, including first pads intended to be coupled to a modulator-demodulator circuit; a second interface, including second pads intended to be coupled to a subscriber identification module card; and a switching circuit, configured to couple the first pads to the second pads or to a communication module integrated to the subscriber identification module. Another embodiment concerns a method of controlling the module.

Abstract: Integrated circuit, method for resetting and computer program product. The integrated circuit comprises a first portion and a second portion. The first portion comprises a reset input configured to receive a reset signal, an activation module connected to the reset input. The activation module is configured to activate the second portion upon reception of the reset signal. The first portion comprises an emissions module configured to emit a replicated reset signal. The second portion can be selectively activated or deactivated. The second portion comprises a reset input configured to receive the replicated reset signal of the emissions module, a determination module configured to determine that an elapsed time starting from the activation of the second portion of the circuit oversteps a threshold.

Abstract: A serial peripheral interface (SPI) device includes a serial clock (SCK) pad receiving a serial clock, first and second Schmitt triggers directly electrically connected to the SCK pad to selectively respectively generate first and second clocks in response to rising and falling edges of the serial clock, first and second flip flops clocked by the first and second clocks to output bits of data to a data node, a multiplexer having an input coupled to the data node and an output coupled to driving circuitry, and driving circuitry transmitting data via a master-in-slave-out (MISO) pad.

Abstract: A method for synchronizing a first time domain with a second time domain of a system on chip includes a detection of at least one periodic trigger event generated in the first time domain, the second time domain or in a third time domain; acquisitions, made at the instants of the at least one trigger event, of the current timestamp values representative of the instantaneous states of the time domain(s) other than the trigger time domain; a comparison, made in the third time domain, between differential durations between current timestamp values which are respectively acquired successively; and a synchronization of the second time domain with the first time domain, on the basis of the comparison.

Abstract: An operation of calibrating the object using a reference reader is performed, the calibration operation including an operation of placing the reference reader at various distances away from the object that correspond to various values of a parameter within the object that is representative of the intensity of the signal received by the object, and, for each distance, an operation of determining an internal phase-shift compensation in the object with respect to a nominal internal phase shift, making it possible to obtain a load modulation amplitude that is higher, in terms of absolute value, than a threshold, and an operation of storing a lookup table of the various values of the parameter and the corresponding internal phase-shift compensations.

Abstract: In accordance with an embodiment, a physically unclonable function device includes a set of floating gate transistor pairs, floating gate transistors of the set of floating gate transistor pairs having a randomly distributed effective threshold voltage belonging to a common random distribution; a differential read circuit configured to measure a threshold difference between the effective threshold voltages of floating gate transistors of floating gate transistor pairs of the set of floating gate transistor pairs, and to identify a floating gate transistor pair in which the measured threshold difference is smaller than a margin value as being an unreliable floating gate transistor pair; and a write circuit configured to shift the effective threshold voltage of a floating gate transistor of the unreliable floating gate transistor pair to be inside the common random distribution.

Abstract: The present disclosure relates to a method for protecting a first data item applied to a cryptographic algorithm, executed by a processor, wherein said algorithm is a per-round algorithm, with each round processing contents of first, second and third registers, the content of the second register being masked, during first parity rounds, by the content of a fourth register and the content of the third register being masked, during second parity rounds, by the content of a fifth register.

Abstract: An antenna configured for near field communication includes a first coil for transmitting and receiving signals having a first frequency and a second coil for transmitting and receiving signals having a second frequency greater than at least twice the first frequency. The first and second coils are magnetically coupled with a coupling coefficient greater than 0.5.