Patents Assigned to STMicroelectronics (Rousset) SAS
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Publication number: 20250105004Abstract: A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over (?)}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.Type: ApplicationFiled: September 17, 2024Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventors: Björn MAGNUSSON LINDGREN, Niclas KARLSSON, Esa HÄMÄLÄINEN, Alexandre ELLISON
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Publication number: 20250102391Abstract: A sensor module includes an organic substrate, a MEMS pressure sensor mounted to the organic substrate, and a unitary lid mounted on the substrate. The unitary lid includes a central elevated portion housing the MEMS pressure sensor, an aperture in the central elevated portion, and a flat flange extending from the central elevated portion to an edge of the organic substrate.Type: ApplicationFiled: September 27, 2023Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventors: Luca MAGGI, Marco DEL SARTO, Alex GRITTI
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Publication number: 20250102543Abstract: An integrated system for electric-current monitoring includes a package and a MEMS sensor device arranged inside the package to provide an output electrical signal indicative of the electric current to be monitored. A sensing coil is provided within the package. The electric current to be monitored flows through the sensing coil. The MEMS sensor device is arranged relative to the sensing coil so as to be affected by flux lines of a magnetic field generated as a whole by the sensing coil as a function of the electric current to be monitored.Type: ApplicationFiled: September 19, 2024Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventor: Davide Giuseppe PATTI
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Publication number: 20250105024Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.Type: ApplicationFiled: December 9, 2024Publication date: March 27, 2025Applicant: STMicroelectronics S.r.l.Inventors: Fulvio Vittorio FONTANA, Michele DERAI
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Publication number: 20250105875Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from an electromagnetic field intended to be received by an antenna and to deliver as an output a first clock signal. A transmit circuit includes an output coupled to the antenna and operates to deliver on its output a modulation signal in phase with the reception signal. A compensation circuit is configured to compensate for a first delay of the first clock signal due to the receive circuit and to the amplitude of the reception signal. The compensation circuit operates to determine a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the first delay.Type: ApplicationFiled: September 16, 2024Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventors: Marc HOUDEBINE, Sylvain MAJCHERCZAK, Florent SIBILLE
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Publication number: 20250104548Abstract: A device includes one or more motion sensors and processing circuitry coupled to the one or more motion sensors. The one or more sensors, in operation, generate motion sensor signals. The processing circuitry, in operation, classifies a user-activity type based on the motion sensor signals, the user-activity type being selected from a plurality of user-activity types including one or more moving activity types, detects a tilt angle of the device based on the motion sensor signals, and classifies a use-condition of the device as used or not used based on the detected tilt angle. The processing circuitry generates a use-warning signal based on whether the classification of the user-activity type is a moving activity type and on whether the classification of the use-condition is used. The device may include an integrated circuit including the motion sensors and the processing circuitry, and the integrated circuit may be embedded in a display.Type: ApplicationFiled: September 27, 2023Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventor: Stefano Paolo RIVOLTA
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Publication number: 20250105831Abstract: A circuit detects zero crosses in an input-signal and includes a low-pass-filter (LPF) receiving the input-signal and introducing a phase-shift dependent on the frequency thereof. Filter circuitry receives the output of the LPF, applies a fixed phase-shift thereto, and adjusts phase and DC-offset thereof based on control signals to produce a filtered output-signal. Control circuitry has a zero-crossing detector receiving the input-signal and the filtered output-signal, detecting zero-crossings of the input-signal and the filtered output-signal, asserting a digital zero cross signal at each zero crossing, and determining a phase-shift and DC-offset between the input-signal and filtered output-signal.Type: ApplicationFiled: September 21, 2023Publication date: March 27, 2025Applicant: STMicroelectronics International N.V.Inventor: Guido DOSSI
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Patent number: 12259273Abstract: The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.Type: GrantFiled: April 22, 2022Date of Patent: March 25, 2025Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMicroelectronics (Grenoble 2) SASInventors: Jeffrey M. Raynor, Nicolas Moeneclaey
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Patent number: 12261597Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.Type: GrantFiled: May 22, 2023Date of Patent: March 25, 2025Assignee: STMicroelectronics S.r.l.Inventors: Alberto Marzo, Vincenzo Randazzo, Vanni Poletto, Giovanni Susinna
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Patent number: 12259844Abstract: In an embodiment a microcontroller includes a processing unit and a deserial-serial peripheral interface (DSPI) module, wherein the deserial-serial peripheral interface module is coupleable to a communication bus configured to operate according to a selected communication protocol, wherein the processing unit is configured to read user data intended for inclusion in an outgoing frame encoded according to the selected communication protocol, calculate, as a function of the user data, a cyclic redundancy check (CRC) value intended for inclusion in the outgoing frame, compose the outgoing frame by including the user data and the calculated CRC value into the outgoing frame, produce a DSPI frame encoded according to the selected communication protocol as a function of the outgoing frame and program a data register of the deserial-serial peripheral interface module with the DSPI frame, and wherein the deserial-serial peripheral interface module is configured to transmit the DSPI frame via the communication bus.Type: GrantFiled: June 1, 2022Date of Patent: March 25, 2025Assignees: STMicroelectronics Application GmbH, STMicroelectronics S.r.l.Inventors: Giuseppe Cavallaro, Fred Rennig
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Patent number: 12261578Abstract: An offset-cancellation circuit having a first amplification stage with a gain of the first amplification stage and configured to receive an offset voltage of a first amplifier. A storage element is configured to be coupled to and decoupled from the first amplification stage and configured to store a potential difference output by the first amplification stage. The potential difference is determined by the offset voltage of the first amplifier and the gain of the first amplification stage. A second amplification stage is coupled to the storage element and configured to receive the potential difference from the storage element when the storage element is decoupled from the first amplification stage and configured to deliver an offset-cancellation current. The offset-cancellation current is determined by the potential difference and a gain of the second amplification stage.Type: GrantFiled: August 19, 2022Date of Patent: March 25, 2025Assignee: STMicroelectronics International N.V.Inventor: Riju Biswas
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Patent number: 12262209Abstract: In an embodiment the method a includes performing, by an integrated circuit (IC) card hosted in a local equipment, authentication with a contactless subscriber device when the subscriber device is within a communication range of a contactless interface of the local equipment, receiving, by the IC card, an identifier (SID) identifying a software module from the subscriber device, the software module configured to enable a subscription profile for a mobile network operator, performing a checking operation at the IC card whether the SID matches a software module identifier stored in the IC card and selectively performing one of downloading the software module to the IC card, enabling the software module at the IC card or disabling the software module at the IC card as a result of performing the checking operation.Type: GrantFiled: March 8, 2024Date of Patent: March 25, 2025Assignee: STMicroelectronics S.r.l.Inventors: Marco Alfarano, Sofia Massascusa
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Publication number: 20250095998Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.Type: ApplicationFiled: December 3, 2024Publication date: March 20, 2025Applicant: STMicroelectronics S.r.l.Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
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Publication number: 20250096057Abstract: An electronic component includes an integrated circuit chip and a package surrounding the integrated circuit chip. The electronic component includes at least a first conductive region at least partially coating one side of the integrated circuit chip. The first conductive region includes an alloy predominantly comprising bismuth.Type: ApplicationFiled: September 6, 2024Publication date: March 20, 2025Applicant: STMicroelectronics International N.V.Inventors: Michael DE CRUZ, Laurent BARREAU
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Publication number: 20250096847Abstract: A device of contactless communication by active load modulation includes a clock signal extraction circuit configured to receive as an input a reception signal and to output a clock signal having a first value when the reception signal is greater than a threshold of the clock signal extraction circuit and having a second value when the reception signal is smaller than the threshold. The device includes a circuit for modifying the value of the threshold, configured to decrease the value of the threshold when the value of the clock signal is equal to the first value, or to increase the value of the threshold when the value of the clock signal is equal to the second value.Type: ApplicationFiled: September 11, 2024Publication date: March 20, 2025Applicant: STMicroelectronics International N.V.Inventors: Florent BARTHELEMY, Marc HOUDEBINE, Laurent Jean GARCIA
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Patent number: 12255233Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.Type: GrantFiled: January 19, 2022Date of Patent: March 18, 2025Assignee: STMicroelectronics S.r.l.Inventors: Mario Giuseppe Saggio, Alessia Maria Frazzetto, Edoardo Zanetti, Alfio Guarnera
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Patent number: 12253968Abstract: In accordance with an embodiment, a system includes: a primary device configured to be connected to at least one secondary device via serial bus having a data wire and a clock wire. The primary device is configured to: provide a clock signal on the clock wire; and transmit a frame comprising control bits on the serial bus, wherein a number of control bits transmitted on the serial bus at at least one location of the frame indicates a format of the frame.Type: GrantFiled: December 8, 2022Date of Patent: March 18, 2025Assignee: STMicroelectronics (Research & Development) LimitedInventors: Sergio Miguez Aparicio, Benjamin Thomas Sarachi
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Patent number: 12254156Abstract: A method of operating a touch screen panel includes initiating a communication between the panel and an active pen and determining a touch zone of the panel. The touch zone includes communication channels that are operating by touch while bi-directional communication is occurring between the panel and active pen. Communications channels within the touch zone are disabled and communication between the panel and the active pen can occur while the communications channels within the touch zone are disabled. When it is determined that the communication between the panel and the active pen has stopped, communications channels continue to be disabled within the touch zone for a set time delay while no communication occurs between the panel and the active pen. After the set delay time, the communication channels within the touch zone are enabled.Type: GrantFiled: August 4, 2023Date of Patent: March 18, 2025Assignee: STMicroelectronics International N.V.Inventors: Bin Fan, Pengcheng Wen
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Patent number: 12253562Abstract: In an embodiment a processing system includes a reset circuit configured to receive a reset-request signal and one or more further reset-request signals, wherein the one or more further reset-request signals are provided by a processing core, one or more further circuits and/or a terminal of the processing system and to generate a combined reset-request signal by combining the reset-request signal and the one or more further reset-request signals, and a hardware test circuit including for each of the one or more further reset-request signals, a respective first combinational circuit configured to selectively assert the respective further reset-request signal, a second combinational logic circuit configured to selectively mask the combined reset-request signal, and a control circuit configured to repeat operations during a diagnostic phase.Type: GrantFiled: March 20, 2023Date of Patent: March 18, 2025Assignees: STMicroelectronics Application GmbH, STMicroelectronics International N.V.Inventors: Roberto Colombo, Vivek Mohan Sharma
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Patent number: 12256590Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.Type: GrantFiled: December 6, 2021Date of Patent: March 18, 2025Assignee: STMicroelectronics (Crolles 2) SASInventors: Thierry Berger, Stephane Allegret-Maret