Abstract: A device, including a main element and a set of at least two auxiliary elements, said main element including a master SWP interface, each auxiliary element including a slave SWP interface connected to said master SWP interface of said NFC element through a controllably switchable SWP link and management means configured to control said SWP link switching for selectively activating at once only one slave SWP interface on said SWP link.

Abstract: A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first metal contact is disposed on a surface of the N-type doped first cathode region and a second metal contact is disposed on a surface of the undoped second anode region. The first metal contact and second metal contact are electrically insulated from each other by an insulating layer on the layer of polysilicon.

Abstract: System on a chip, comprising several master pieces of equipment, several slave resources, an interconnection circuit coupled between the master pieces of equipment and the slave resources and capable of routing transactions between master pieces of equipment and slave resources. A first particular slave resource cooperates with an element of the system on a chip, for example a clock signal generator, and the element has the same access rights as those of the corresponding first particular slave resource.

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: An integrated circuit includes a programmable logic block. The programmable logic block includes a programmable logic array (PLA) and a field programmable gate array (FPGA). The PLA includes logic cells having a first architecture. The FPGA includes logic cells having a second architecture more complex than the first architecture. The programmable logic block includes an interface coupled to the PLA and the FPGA. An integrated circuit may also include circuitry for selecting one of plurality of clock signals for logic cells of a PLA.

Abstract: A device includes a first circuit that includes a near-field emission circuit, a second circuit, and a hardware connection linking the first circuit to the second circuit. The hardware connection is dedicated to a priority management between the first circuit and the second circuit. In addition, priority management information can be communicated between a near-field emission circuit and a second circuit. The communicating occurs between a dedicated hardware connection connecting the near-field emission circuit to the second circuit.

Abstract: The present disclosure relates to a method implemented by a first NFC device, wherein the establishment of a transaction with a second NFC device configured in reader mode is performed when the signal level received by the first device, configured in card mode, reaches a first threshold, depending on the type of modulation technology of the second device.

Abstract: A method for synchronizing a first time domain with a second time domain of a system on chip includes a detection of at least one periodic trigger event generated in the first time domain, the second time domain or in a third time domain; acquisitions, made at the instants of the at least one trigger event, of the current timestamp values representative of the instantaneous states of the time domain(s) other than the trigger time domain; a comparison, made in the third time domain, between differential durations between current timestamp values which are respectively acquired successively; and a synchronization of the second time domain with the first time domain, on the basis of the comparison.

Abstract: An integrated circuit includes a programmable logic array. The programmable logic array incudes a plurality of logic elements arranged in rows and columns. Each logic element includes a direct output and a synchronized output. The direct output of each logic element is coupled to all other logic elements of higher rank, but is not coupled to logic elements of lower rank.

Abstract: The disclosure includes a method of authenticating a processor that includes an arithmetic and logic unit. At least one decoded operand of at least a portion of a to-be-executed opcode is received on a first terminal of the arithmetic and logic unit. A signed instruction is received on a second terminal of the arithmetic and logic unit. The signed instruction combines a decoded instruction of the to-be-executed opcode and a previous calculation result of the arithmetic and logic unit.

Abstract: A switched-mode power supply includes a voltage ramp generation circuit that generates a voltage ramp signal. The voltage ramp generation circuit includes, selectively connected in parallel, at least three capacitors. The selective connection of the capacitors is made according to a value of an internal power supply voltage of the switched-mode power supply.

Abstract: The latch device includes an RS type latch flip-flop capable of being supplied between a first supply voltage and a second supply voltage which is lower than the first supply voltage and having first and second flip-flop inputs and a flip-flop output connected to the output terminal. A control module positions the latch flip-flop in a set state or in a reset state when the first supply voltage has a first value which is lower than the low voltage then, the latch flip-flop being positioned, confers the high voltage on the first supply voltage and the low voltage on the second supply voltage and outputs and maintains the high voltage or the low voltage on the flip-flop output while avoiding outputting a prohibited logic state at the two flip-flop inputs.

Abstract: Disclosed herein is an electronic control unit including a communication circuit designed to receive intelligent transport system (ITS) messages, an authentication circuit for authenticating the received messages, and a secure element containing a hardware-secure non-volatile memory and a continually active clock counter.

Abstract: The electronic control unit includes a communication circuit adapted to receive intelligent transport system messages, an authentication circuit designed to authenticate the received messages, a non-volatile memory configured to record the authenticated received messages, and a secure element. The secure element includes a blacklist of automatically excluded senders and is configured to directly reject a received message from a sender on the blacklist without authentication using the authentication circuit. Alternatively, the secure element includes a whitelist of automatically allowed senders and is configured to directly record a received message from a sender on the whitelist in the non-volatile memory without authentication using the authentication circuit.

Abstract: An embodiment provides a circuit of cyclic activation of an electronic function including a hysteresis comparator controlling the charge of a capacitive element powering the function.

Abstract: An integrated circuit includes a programmable logic array. The programmable logic array incudes a plurality of logic elements arranged in rows and columns. Each logic element includes a direct output and a synchronized output. The direct output of each logic element is coupled to all other logic elements of higher rank, but is not coupled to logic elements of lower rank.

Abstract: A device includes a MOS transistor and a bipolar transistor at a same first portion of a substrate. The first portion includes a first well doped with a first type forming the channel of the MOS transistor and two first regions doped with a second type opposite to the first type that are arranged in the first well which form the source and drain of the MOS transistor. The first portion further includes: a second well doped with the second type that is arranged laterally with respect to the first well to form the base of the bipolar transistor; a second region doped with the first type that is arranged in the second well to form the emitter of the bipolar transistor; and a third region doped with the first type that is arranged under the second well to form the collector of the bipolar transistor.

Abstract: An embodiment electronic circuit power supply device is configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node; regulate a potential of the node to a constant value by acting on the third current; flow a fourth constant current through a third conductor connected to the node; and consume a fifth current that is an image of the third current.

Abstract: In an embodiment a system on chip includes a plurality of microprocessors, a plurality of slave resources, an interconnection circuit coupled between the microprocessors and the slave resources, the interconnection circuit configured to route transactions between the microprocessors and the slave resources and a processing controller configured to allow a user of the system to implement within the system at least one configuration diagram of the system defined by a set of configuration pieces of information used to define an assignment of at least one microprocessor to at least some of the slave resources, select the at least one microprocessors, and authorise an external debugging tool to access, for debugging purposes, only the slave resources assigned to the at least one microprocessor.

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.