Abstract: In an embodiment a non-volatile memory device includes a memory array having a plurality of memory cells, a control unit operatively coupled to the memory array, a biasing stage controllable by the control unit and configured to apply a biasing configuration to the memory cells to perform a memory operation and a reading stage coupled to the memory array and controllable by the control unit, the reading stage configured to verify whether the memory operation has been successful based on a verify level, wherein the control unit is configured to adaptively modify a value of the verify level based on an ageing of the memory cells.

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

Abstract: An EEPROM memory integrated circuit includes memory cells arranged in a memory plane. Each memory cell includes an access transistor in series with a state transistor. Each access transistor is coupled, via its source region, to the corresponding source line and each state transistor is coupled, via its drain region, to the corresponding bit line. The floating gate of each state transistor rests on a dielectric layer having a first part with a first thickness, and a second part with a second thickness that is less than the first thickness. The second part is located on the source side of the state transistor.

Abstract: An integrated circuit includes a substrate, an interconnection part, and an isolating region located between the substrate and the interconnection part. A decoy structure is located within the isolating region and includes a silicided sector which is electrically isolated from the substrate.

Abstract: An integrated physical unclonable function device includes at least one reference capacitor and a number of comparison capacitors. A capacitance determination circuit operates to determine a capacitance of the at least one reference capacitor and a capacitance of each comparison capacitor. The determined capacitances of the comparison capacitors are then compared to the determined capacitance of the reference capacitor by a comparison circuit. A digital word is then generated with bit values indicative of a result of the comparisons made by the comparison circuit.

Abstract: A device includes a memory and cryptographic processing circuitry coupled to the memory. The memory, in operation, stores one or more lookup tables. The cryptographic processing circuitry, in operation, processes masked data and protects the processing of masked data against side channel attacks. The protecting includes applying masked binary logic operations to masked data using lookup tables of the one or more lookup tables.

Abstract: In an embodiment a memory cell includes a first doped well of a first conductivity type in contact with a second doped well of a second conductivity type, the second conductivity type being opposite to the first conductivity type, a third doped well of the second conductivity type in contact with a fourth doped well of the first conductivity type, a first wall in contact with the second and fourth wells, the first wall including a conductive or semiconductor core and an insulating sheath, a stack of layers including a first insulating layer, a first semiconductor layer, a second insulating layer and a second semiconductor layer at least partially covering the second and fourth wells and a third semiconductor layer located below the second and fourth wells and the first wall.

Abstract: Provided are techniques for protecting a transaction in near-field communication. Provided is an electronic device including a processor hosting an application, a near-field communication module, and a secure element distinct from the processor. The near-field communication module is configured to identify the type of terminal emitting a polling frame, addressed to the application, that the communication module receives by analyzing the type of the polling frame. The device is configured to compare the result of the analysis with at least one command received from the terminal during the implementation of an NFC transaction.

Abstract: The present disclosure relates to a near-field communication device including a near-field communication controller. The near-field communication controller includes at least one first demodulator, adapted to apply a first type of demodulation to a first signal modulated according to a first or a second type of modulation; and at least one second demodulator, adapted to apply a second type of demodulation to the first signal.

Abstract: An electronic device includes a processor and one or more secure elements. The processor executes a first high-level operating system and a first application. The one or more secure elements execute a first low-level operating system to verify a reliability, an authenticity, or a reliability and an authenticity of the first high-level operating system, and execute a second low-level operating system to execute a second application and to perform wireless communication with the first application. At each booting of the electronic device, the first low-level operating system performs a verification of the reliability, of the authenticity, or of the reliability and the authenticity of the first high-level operating system. In response to a request from the first application to the second application, the second low-level operating system requests a result of the verification from the first low-level operating system, and transmits the result to the second application.

Abstract: An electronic device includes a secure element and an application programming interface. The secure element, in operation, executes a first application. The application programming interface, in operation, verifies a reliability of a received command directed to the first application, and transmits the command and a result of the verification to the first application.

Abstract: The present disclosure relates to a circuit for testing a random number generator adapted to delivering a series of random bits and comprising at least one test unit configured to detect a defect in the series of random bits, said test circuit being adapted to verifying whether, after the detection of a first defect by the test unit, the number of random bits, generated by the random number generator without the detection of a second defect by said unit test, is smaller than a first threshold.

Abstract: An integrated circuit includes a semiconductor substrate, a conductive layer above a front face of the substrate, a first metal track in a first metal level, and a pre-metal dielectric region located between the conductive layer and the first metal level. A metal-insulator-metal-type capacitive structure is located in a trench within the pre-metal dielectric region. The capacitive structure includes a first metal layer electrically connected with the conductive layer, a second metal layer electrically connected with the first metal track, and a dielectric layer between the first metal layer and the second metal layer.

Abstract: Disclosed herein is a debug system including a host computer, a microcontroller, and a debug probe for interface therebetween for performing debug trace operations. The debug probe samples the current drawn by the microcontroller. The debug probe and host computer cooperate so as to acquire and accurately align trace data and the samples of the current drawn by the microcontroller. Techniques for performing this alignment are described herein and enable for accurate inferences to be drawn about the current drawn by the microcontroller during different program operations.

Abstract: A semiconductor region includes an isolating region which delimits a working area of the semiconductor region. A trench is located in the working area and further extends into the isolating region. The trench is filled by an electrically conductive central portion that is insulated from the working area by an isolating enclosure. A cover region is positioned to cover at least a first part of the filled trench, wherein the first part is located in the working area. A dielectric layer is in contact with the filled trench. A metal silicide layer is located at least on the electrically conductive central portion of a second part of the filled trench, wherein the second part is not covered by the cover region.

Abstract: An integrated circuit includes a capacitive transistor supported by a semiconductor substrate. The capacitive transistor includes: a drain and a source formed in the semiconductor substrate; a gate having a first portion extending in depth in the semiconductor substrate, and a second portion prolonging said first portion and extending over the semiconductor substrate; and a dielectric layer extending between the gate and the semiconductor substrate.

Abstract: An embodiment system comprises a physical unclonable function device, wherein the device comprises a first assembly of non-volatile memory cells each having a selection transistor embedded in a semiconductor substrate and a depletion-type state transistor having a control gate and a floating gate that are electrically connected, the state transistors having respective effective threshold voltages belonging to a common random distribution, and a processing circuit configured to deliver, to an output interface of the device, a group of output data based on a reading of the effective threshold voltages of the state transistors of the memory cells of the first assembly.

Abstract: The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.

Abstract: An integrated circuit includes a programmable logic block. The programmable logic block includes a programmable logic array (PLA) and a field programmable gate array (FPGA). The PLA includes logic cells having a first architecture. The FPGA includes logic cells having a second architecture more complex than the first architecture. The programmable logic block includes an interface coupled to the PLA and the FPGA. An integrated circuit may also include circuitry for selecting one of plurality of clock signals for logic cells of a PLA.

Abstract: A non-volatile memory includes current sectors and a substitution sector. The non-volatile memory is controlled to store data into the sectors and to erase data stored in one of the sectors by erasing all the data stored in that sector at once. The current sectors include a first current sector storing at least one first valid data element and a second current sector storing at least one second valid data element. A determination is made that one of the current sectors is to be erased. One sector among the current sectors is selected. Valid data in the selected current sector is then copied into the substitution sector. All data in the selected current sector then erased.