Abstract: Packaged semiconductor device having a frame, of conductive material; a body of semiconductor material, fixed to the frame through a first adhesive layer; a heat-sink element, fixed to the body through a second adhesive layer; and a packaging mass surrounding the body and, at least partially, the frame and the heat-sink element. The heat-sink element is formed by a heat-sink die facing, and coplanar to, a main face of the device and by a spacer structure, which includes a pair of pedestals projecting from the perimeter of the heat-sink die towards the body and rest on the body.

Abstract: A driver circuit includes a temperature sensor generating a first voltage representative of current operating temperature. An amplifier compares the first voltage to a second voltage representative of an upper threshold operating temperature, and generates a control signal based thereupon. A variable current source generates a load current from the control signal. The amplifier generates the control signal to cause the variable current source to generate the load current as having a magnitude equal to an upper threshold when the first voltage is less than the second voltage. The amplifier generates the control signal to cause the variable current source to generate the load current as having a magnitude that is decreasing until the first and second voltages are equal, and then generates the control signal to cause the variable current source to maintain the load current magnitude at a level at which the first and second voltages are equal.

Abstract: A micro-electro-mechanical actuator device includes a fixed structure and a mobile structure. The mobile structure includes a first deformable band, a second deformable band, and a third deformable band, both of which extend on opposite sides of the first deformable band, each of which carries a piezoelectric actuator. In a working condition, in which the second and third piezoelectrics are biased, the second and third deformable bands are subjected to a negative bending, while the first deformable band is subjected to a positive bending. There are thus generated two translations that add together, causing a displacement of the first deformable band greater than the one that may be obtained by a single membrane of an equal base area.

Abstract: A circuit for amplifying signals from a Micro Electro-Mechanical System (MEMS) capacitive sensor is provided. First and second input nodes receive a sensing signal applied differentially between the input nodes. A first amplifier stage and a second amplifier stage, respectively, produce a differential output signal between first and second output nodes. A common mode signal is detected at the output nodes. A voltage divider having an intermediate tap node is coupled between the first output node and the second output node. A feedback stage is coupled between the intermediate tap node of the voltage divider and the inputs of the first amplifier stage and the second amplifier stage, where the feedback line is sensitive to the common mode signal at the output nodes.

Abstract: A semiconductor product such as an integrated circuit includes a laminar plastic substrate having first and second opposed surfaces and through holes extending through the substrate, electrically and/or thermally conductive material balls inserted in the through holes at the first surface of the substrate, and one or more semiconductor chips mounted at the first surface of the substrate, the semiconductor chip(s) electrically and/or thermally coupled with electrically and/or thermally conductive material balls inserted in the through holes.

Abstract: A MEMS device includes a fixed supporting body forming a cavity, a mobile element suspended over the cavity, and an elastic element arranged between the fixed supporting body and the mobile element. First, second, third, and fourth piezoelectric elements are mechanically coupled to the elastic element, which has a shape symmetrical with respect to a direction. The first and second piezoelectric elements are arranged symmetrically with respect to the third and fourth piezoelectric elements, respectively. The first and fourth piezoelectric elements are configured to receive a first control signal, whereas the second and third piezoelectric elements are configured to receive a second control signal, which is in phase opposition with respect to the first control signal so that the first, second, third, and fourth piezoelectric elements deform the elastic element, with consequent rotation of the mobile element about the direction.

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: Application data and error correction code (ECC) checkbits associated with that application data are stored in a first memory. The ECC checkbits, but not the application data, are stored in a second memory. In response to a request to read the application data from the first memory, the ECC checkbits from the first memory are also read and used to detect, and possibly correct, errors in the read application data. The ECC checkbits are further output from both the first and second memories for bit-by-bit comparison. In response to a failure of the bit-by-bit comparison, a signal indicating possible malfunction of one or the other or both of the first and second memories is generated.

Abstract: A circuit includes a first transistor having a control terminal and a current path between first and second current path terminals. A second transistor has a control terminal and a current path between first and second current path terminals. The first current path terminal of the first transistor is coupled to the first current path terminal of the second transistor at an intermediate point. A first current buffer has an input and an output. The input of the first current buffer is coupled to the second current path terminal of the first transistor. A second current buffer has an input and an output, the input of the second current buffer being coupled to the second current path terminal of the second transistor. A summation node is coupled to the outputs of the first and second current buffer.

Abstract: A diagnostic circuit is used for detecting the load status of an audio amplifier. The audio amplifier includes two output terminals for connection to a speaker. The diagnostic circuit may include a first circuit, which configured to generate a first signal indicating whether a signal provided via the two output terminals comprises an audio signal. A second circuit can be configured to detect a first measurement signal being indicative for the output current provided via the two output terminals, and to compare the first measurement signal with at least one threshold in order to generate a second signal indicating whether the output current has a low current amplitude profile or a high current amplitude profile. A third circuit can be configured to generate a diagnostic signal as a function of the first and the second signal.

Abstract: An electronic component includes one or more circuits having electrical connections coupled therewith. The electrical connections include a lead frame as well as electrical wires coupling the circuit or circuits to respective portions of the lead frame. The electrical wires may be formed as one piece with the respective portion of the lead frame without joints therebetween, e.g., by 3D printing.

Abstract: Microelectromechanical transducer comprising a semiconductor body, four cavities buried within the semiconductor body and four membranes, each membrane being suspended over a respective cavity and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer; the microelectromechanical transducer further comprising four transducer elements housed by a respective membrane and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal.

Abstract: A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.

Abstract: A multi-device module, comprising: a first substrate, which houses a first MEMS transducer, designed to transduce a first environmental quantity into a first electrical signal, and an integrated circuit, coupled to the first MEMS transducer for receiving the first electrical signal; a second substrate, which houses a second MEMS transducer, designed to transduce a second environmental quantity into a second electrical signal; and a flexible printed circuit, mechanically connected to the first and second substrates and electrically coupled to the integrated circuit and to the second MEMS transducer so that the second electrical signal flows, in use, from the second MEMS transducer to the integrated circuit.

Abstract: According to one embodiment, a PCM memory device includes a memory matrix having memory cells of the phase-change type organized in a plurality of word lines and bit lines. Each memory cell has a storage element and an access element including at least one MOS transistor, which is controlled to allow access to the storage element and to carry out read/programming storage operations, in which source terminals of the MOS transistors of access elements of the memory cells of the same word line are connected to the same source line. The source lines of the memory matrix are electrically short-circuited in groups. A single source line driver element for each group of source lines is configured in such a manner as to generate a respective source line driver signal in order to bias in a corresponding manner all the source lines of the respective group.

Abstract: A frequency modulation MEMS triaxial gyroscope, having two mobile masses; a first and a second driving body coupled to the mobile masses through elastic elements rigid in a first direction and compliant in a second direction transverse to the first direction; and a third and a fourth driving body coupled to the mobile masses through elastic elements rigid in the second direction and compliant in the first direction. A first and a second driving element are coupled to the first and second driving bodies for causing the mobile masses to translate in the first direction in phase opposition. A third and a fourth driving element are coupled to the third and fourth driving bodies for causing the mobile masses to translate in the second direction and in phase opposition. An out-of-plane driving element is coupled to the first and second mobile masses for causing a translation in a third direction, in phase opposition.

Abstract: A ringing peak detector circuit includes an input buffer receives a pair of differential feedback signals indicating a drain-source voltage of the at least one low side electronic switch. The input buffer generates shifted differential feedback signals having a common mode voltage that is equal to approximately one half of the supply voltage. A peak detector circuit is coupled to the input buffer to receive the shifted differential voltage signals. The peak detector circuit detects a peak value of an oscillation on the inductive electric load and to generate an output signal indicating the detected peak value. A circuit generates a control signal based on the detected peak value and a maximum value, with the control signal being applied to the inductive electrical load driver to control switching of the at least one low side switch.

Abstract: A bi-directional switch circuit includes first and second transistors having their control electrodes coupled at a first common node and the current paths coupled at a second common node in an anti-series arrangement. First and second electrical paths coupled between the first common node and the first and second transistors, respectively, include first and second switches switchable between a conductive state and a non-conductive state. A third electrical path between the first and second common nodes includes a third switch switchable between a conductive state and a non-conductive state. The third switch is coupled with the first and second switches by a logical network configured to switch the third switch to the conductive state with the first and second switches switched to the non-conductive state, and to the non-conductive state with either one of the first and second switches switched to the conductive state.

Abstract: A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

Abstract: A coupling circuit for power line communications includes a coupling transformer having first and second mutually coupled windings, with the first winding connectable to a power line. The second winding includes a pair of intermediate taps with one or more tuning inductor therebetween. The inductor or inductors are set between a first portion and a second portion of the second winding of the coupling transformer. A switch member is provided coupled with the inductor. The switch member is selectively actuatable to short-circuit the inductor.