Abstract: Disclosed herein is a microelectromechanical device that features a fixed structure defining a cavity, a tiltable structure elastically suspended within the cavity, and a piezoelectrically driven actuation structure that rotates the tiltable structure about a first rotation axis. The actuation structure includes driving arms with piezoelectric material, elastically coupled to the tiltable structure by decoupling elastic elements that are stiff to out-of-plane movements but compliant to torsional movements. The tiltable structure is elastically coupled to the fixed structure at the first rotation axis using elastic suspension elements, while the fixed structure forms a frame surrounding the cavity with supporting elements. A lever mechanism is coupled between a supporting element and a driving arm.

Abstract: A method is provided for controlling an electronic apparatus on the basis of a value of a lid angle between a first hardware element accommodating a first magnetometer and a second hardware element accommodating a second magnetometer. The method includes acquiring, through the magnetometers, first signals representing an orientation of the hardware elements. A calibration parameter indicative of a condition of calibration of the magnetometers is generated on the basis of the first signals. A reliability value indicative of a condition of reliability of the first signals is generated on the basis of the first signals. A first intermediate value of the lid angle is calculated on the basis of the first signals. A current value of the lid angle is calculated on the basis of the calibration parameter, of the reliability value, and of the first intermediate value, and the electronic apparatus is controlled on the basis of the current value.

Abstract: A non-volatile memory receives a data read request from a processing core of a plurality of processing cores. The read request is directed to a data partition of a non-volatile memory. The non-volatile memory determines whether to process the read request using read-while-write collision management. When it is determined to process the read request using read-while-write collision management, an address associated with the read request is stored in an address register of a set of registers associated with the processing core. Write operations directed to the data partition are suspended. A read operation associated with the read request is executed while the write operations are suspended and data responsive to the read operation is stored in one or more data registers of the set of registers. The data stored in the one or more data registers of the set of registers is provided to the processing core.

Abstract: The valve is formed in a valve body housing a first path portion, a second path portion, and an coupling zone between the first and second path portions. A shutter is arranged in the coupling zone and has a shutting portion of ferromagnetic material that is deformable under the action of an external magnetic field between an undeformed position, wherein the shutter closes the coupling zone, and a deformed position, wherein the shutter at least partially frees the coupling zone. The shutting portion of the shutter is formed by a rubber membrane incorporating particles, for example of ferrite particles.

Abstract: A System in Package, SiP semiconductor device includes a substrate of laser direct structuring, LDS, material. First and second semiconductor die are arranged at a first and a second leadframe structure at opposite surfaces of the substrate of LDS material. Package LDS material is molded onto the second surface of the substrate of LDS material. The first semiconductor die and the package LDS material lie on opposite sides of the substrate of LDS material. A set of electrical contact formations are at a surface of the package molding material opposite the substrate of LDS material. The leadframe structures include laser beam processed LDS material. The substrate of LDS material and the package LDS material include laser beam processed LDS material forming at least one electrically-conductive via providing at least a portion of an electrically-conductive line between the first semiconductor die and an electrical contact formation at the surface of the package molding material opposite the substrate.

Abstract: An embodiment system includes: a first motion sensor configured to generate first sensor data indicative of a first type of movement of an electronic device; a first feature detection circuit configured to determine at least one orientation-independent feature based on the first sensor data; and a classifying circuit configured to determine whether or not the electronic device is located on a stationary surface based on the at least one orientation-independent feature.

Abstract: A system and method for measuring a capacitance value of a capacitor are provided. In embodiments, a resistor is coupled to a terminal of the capacitor. A difference in voltage at the terminal between a first time and a second time during a discharge routine of the capacitor is measured. The discharge routine includes sinking a current through a discharge circuit coupled to the resistor from first to second. Integration of a difference in voltage at terminals of the resistor during the discharge routine between the first and second times is also measured. The capacitance value is computed based on the measured difference in voltage, the measured integration, and the resistance value of the resistor. The health of the capacitor is determined based on a difference between the computed capacitance value and a threshold value.

Abstract: In an embodiment an isolated gate driver device includes a low-voltage section having a control input configured to receive a PWM control signal with a switching frequency from a control stage, a high-voltage section, galvanically isolated from the low-voltage section the high-voltage section including a driving output configured to provide a gate-driving signal as a function of the PWM control signal to a power stage having at least one switch, a feedback input configured to receive at least one feedback signal indicative of an operation of the power stag, and an ADC module configured to convert the feedback signal into a digital data stream and a conversion-control module coupled to the ADC module and configured to provide a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal.

Abstract: A packaged environmental sensor includes a supporting structure and a sensor die, which incorporates an environmental sensor and is arranged on a first side of the supporting structure. A control chip is coupled to the sensor die and is arranged on a second side of the supporting structure opposite to the first side. A lid is bonded to the first side of the supporting structure and is open towards the outside in a direction opposite to the supporting structure. The sensor die is housed within the lid.

Abstract: A remote access device and methods of operation thereof are provided for accessing a physical object or location. The remote access device includes an accelerometer, a wireless transmitter, and control circuitry. The control circuitry causes the wireless transmitter to transition between a first operating mode and a second operating mode in response to receiving signals from the accelerometer indicating a first change in motion states of the remote access device. The control circuitry causes the wireless transmitter to transition between a first operating mode and a second operating mode in response to receiving signals from the accelerometer indicating a second change in motion states of the remote access device. The control circuitry further causes the wireless transmitter to transition between the first operating mode and the second operating mode in response to receiving signals from the accelerometer indicating a third change in motion states of the remote access device.

Abstract: In an embodiment, a linear voltage regulator includes: an output transistor having a first current path terminal configured to be coupled to a load, and a second current path terminal coupled to a first supply terminal, where the output transistor is configured to provide, at the first current path terminal, a regulated output voltage; a voltage source circuit configured to provide, in an open loop manner, a first voltage to a control terminal of the output transistor; and a feedback loop coupled between the first current path terminal of the output transistor and the control terminal of the output transistor, the feedback loop including a sense transistor having a first current path terminal coupled to the first current path terminal of the output transistor.

Abstract: The present disclosure is directed to a wide band gap transistor that includes a semiconductor structure, having at least one wide band gap semiconductor layer of gallium nitride or silicon carbide, an insulating gate structure and a gate electrode, separated from the semiconductor structure by the insulating gate structure. The insulating gate structure contains a mixture of aluminum, hafnium and oxygen.

Abstract: A semiconductor device includes an electrically conductive clip arranged in a bridge-like position between a semiconductor integrated circuit chip and an electrically conductive pad of a leadframe. The electrically conductive clip is soldered to the semiconductor integrated circuit chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor integrated circuit chip and the electrically conductive pad. Prior to soldering, the clip is immobilized in the desired bridge-like position via one of welding (such as laser welding) or gluing at dedicated immobilization areas.

Abstract: A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

Abstract: A control circuit for an electronic converter is described. The control circuit generates a drive signal for an electronic switch of the electronic converter by setting the drive signal to a first logic level in response to a switch-on signal, thereby closing said electronic switch for a switch-on interval, and to a second logic level in response to a switch-off signal, thereby opening the electronic switch for a switch-off interval. The control circuit comprises a valley detection circuit configured to generate a trigger in a trigger signal in response to detecting a valley in the voltage at the electronic switch during the switch-off interval, and a combinational logic circuit configured to generate the switch-on signal by masking the trigger signal in response to a blanking signal.

Abstract: A process for manufacturing a HEMT device includes forming a conductive region on a work body having a semiconductive heterostructure. To obtain the conductive region, a first reaction region having carbon is formed on the heterostructure and a metal stack is formed having a second reaction region in contact with the first reaction region. The work body is annealed, so that the first reaction region reacts with the second reaction region, thus forming an interface portion of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive hetero structure.

Abstract: An enhancement mode high electron-mobility transistor (HEMT) device includes a semiconductor body having a top surface and including a heterostructure configured to generate a two-dimensional electron gas, 2DEG. The HEMT device includes a gate structure which extends on the top surface of the semiconductor body, is biasable to electrically control the 2DEG and includes a functional layer and a gate contact in direct physical and electrical contact with each other. The gate contact is of conductive material and the functional layer is of two-dimensional semiconductor material and includes a first doped portion with P-type electrical conductivity, which extends on the top surface of the semiconductor body and is interposed between the semiconductor body and the gate contact along a first axis.

Abstract: The present disclosure is directed to a sense amplifier architecture for a memory device having a plurality of memory cells. Groups of non-volatile memory cells store respective codewords formed by stored logic states, logic high or logic low, of the memory cells of the group. The sense amplifier architecture has a plurality of sense amplifier reading branches, each sense amplifier reading branch coupled to a respective memory cell and configured to provide an output signal, which is indicative of a cell current flowing through the same memory cell; a comparison stage, to perform a comparison between the cell currents of memory cells of a group; and a logic stage, to determine, based on comparison results provided by the comparison stage, a read codeword corresponding to the group of memory cells.

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

Abstract: Described herein is a MEMS acoustic transducer device provided with a micromechanical detection structure that detects acoustic-pressure waves and supplies a transduced electrical quantity, and with an integrated circuit operatively coupled to the micromechanical detection structure and having a reading module that generates at output an audio signal as a function of the transduced electrical quantity. The integrated circuit is further provided with a recognition module, which recognizes a of sound activity event associated to the transduced electrical quantity. The MEMS acoustic transducer has an output that supplies at output a data signal that carries information regarding recognition of the sound activity event.