Abstract: The present disclosure is directed to a system that includes a sensor and a signal conditioner coupled to the sensor. The signal conditioner includes signal processing circuitry coupled to the sensor and offset cancellation circuitry. The offset cancellation circuitry includes a sign detector configured to output a high signal or a low signal based on a sign of an output signal from the signal processing circuitry, an integrator coupled to the sign detector, and a divider coupled to the integrator and to an input of the signal processing circuitry.
Abstract: A data frame in a touch capacitive sensing circuit includes both mutual capacitance data and self capacitance data. The mutual capacitance data and self capacitance data of the frame are filtered to define mutual capacitance and self capacitance islands. Centroids of the mutual capacitance and self capacitance islands are calculated and then processed in a weighted mixing operation to produce a hybrid centroid that more accurately locates the coordinates of a detected touch/hover.
Abstract: A serial peripheral interface (SPI) device includes a serial clock (SCK) pad receiving a serial clock, first and second Schmitt triggers directly electrically connected to the SCK pad to selectively respectively generate first and second clocks in response to rising and falling edges of the serial clock, first and second flip flops clocked by the first and second clocks to output bits of data to a data node, a multiplexer having an input coupled to the data node and an output coupled to driving circuitry, and driving circuitry transmitting data via a master-in-slave-out (MISO) pad.
Type:
Application
Filed:
January 7, 2021
Publication date:
August 12, 2021
Applicants:
STMicroelectronics International N.V., STMicroelectronics (Rousset) SAS
Inventors:
Manoj KUMAR, Kailash KUMAR, Nicolas DEMANGE
Abstract: A circuit includes an amplifier having first and second inputs and an output, and a feedback circuit configured to generate a feedback voltage in response to a voltage at the output of the amplifier. The feedback circuit is coupled to the first input of the amplifier to provide the feedback voltage to the first input of the amplifier. An output circuit is configured to generate a variable bias current in response to the voltage at the output of the amplifier. A switch circuit is configured to switch the second input of the amplifier from receiving a first reference voltage during a first mode of operation to receiving a second reference voltage during a second mode of operation.
Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.
Abstract: Disclosed herein is a circuit including a driver circuit applying a received drive signal to a capacitive sensing line of a capacitive touch panel as a boosted drive signal, the driver circuit powered by a boosted supply voltage. A charge pump circuit receives an input supply voltage and output the boosted supply voltage, the charge pump circuit including a voltage sensing circuit to sense the boosted supply voltage and a comparison circuit to compare the sensed boosted supply voltage to a threshold and produce a comparison signal. A control circuit determines a ratio of a pulse width of the comparison signal to the drive signal, and tunes operation of the charge pump circuit to drive the ratio to match a performance threshold.
Abstract: A touch screen controller disclosed herein includes a circuit configured to generate a digital touch voltage comprises of samples, at a base sampling rate. The touch screen controller also includes a digital processing unit configured to analyze a first subset of samples of the digital touch voltage samples to determine noise content thereof, the first subset of samples corresponding to samples at a first investigated sampling rate that is a first function of the base sampling rate. The digital processing unit is also configured to analyze a second subset of samples of the digital touch voltage to determine noise content thereof, with the second subset of samples corresponding to samples at a second investigated sampling rate that is a second function of the base sampling rate, and determine a preferred sampling rate from among the first and second investigated sampling rates as a function of determined noise content thereof.
Abstract: A microelectromechanical device includes a body of semiconductor material, which forms a cavity, a mobile structure, and an actuation structure. The actuation structure includes at least one first deformable element which faces the cavity and is mechanically coupled to the body and to the mobile structure, and a piezoelectric-actuation system which can be controlled so as to deform the first deformable element and cause a consequent rotation of the mobile structure. The mobile structure includes a supporting region and at least one first pillar region, the first pillar region being mechanically coupled to the first deformable element, the supporting region being set on the first pillar region and overlying at least part of the first deformable element.
Abstract: The present disclosure is directed to a micro module with a support structure. The micro module includes a carrier substrate having contacts and a bonding pad, a semiconductor die, and a support structure. The semiconductor die is positioned on the bonding pad and is electrically coupled to the contacts. The support structure is positioned on the bonding pad and adjacent to the semiconductor die. The support structure reinforces the bonding pad such that the bonding pad is more rigid than flexible. As a result, an external force applied to the micro module is less likely to cause the micro module to bend and damage the semiconductor die.
Type:
Grant
Filed:
July 1, 2019
Date of Patent:
August 10, 2021
Assignee:
STMicroelectronics, Inc.
Inventors:
Freddie Folio, Michael Tabiera, Edwin Graycochea, Jr.
Abstract: A pixel includes a photosensitive circuit, a sense node, a first transistor and a first capacitor. A first electrode of the first capacitor is connected to a control terminal of the first transistor. A second electrode of the first capacitor is to a node of application of a first control signal.
Abstract: A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.
Abstract: A unique hardware key is recorded a secure hardware environment. A first logic circuit of the secure hardware environment is configured to generate a unique derived key from said unique hardware key and at least one piece of information. The at least one piece of information relates to one or more of an execution context and a use of a secret key. The secure hardware environment further includes a first encryption device that performs a symmetric encryption of the secret key using the unique derived key. This symmetric encryption generates an encrypted secret key for use outside of the secure hardware environment.
Type:
Application
Filed:
January 28, 2021
Publication date:
August 5, 2021
Applicants:
STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Alps) SAS
Inventors:
Gilles PELISSIER, Nicolas ANQUET, Delphine LE-GOASCOZ
Abstract: Circuitry generates base-to-emitter voltages (Vbe1, Vbe2) of two BJTs biased at different current densities, a base-to-emitter voltage (Vbe) of a BJT biased so Vbe is complementary to absolute temperature and has a curved non-linearity across temperature, and base-to-emitter voltages (Vbe1_c, Vbe2_c) of two BJTs biased by a temperature independent constant current and a current proportional to absolute temperature so Vbe2_c?Vbe1_c has the same but opposite curved non-linearity across temperature as Vbe. A sampling circuit samples these voltages and provides them to inputs of a loop filter. Filter outputs are quantized to produce a bitstream.
Abstract: The present disclosure relates to a device including a rectifying bridge including: a branch connected between first and second nodes; another branch including first and second MOS transistors series-connected between the first and second nodes and having their sources coupled together; a resistor connecting the gate of the first transistor to the second node; another resistor connecting the gate of the second transistor and the first node; and for each transistor, a circuit including first and second terminals respectively connected to the drain and to the gate of the transistor, and being configured to electrically couple its first and second terminals when a voltage between the first terminal of the circuit and the first terminal of the other circuit is greater than a threshold of the circuit.
Abstract: A shared pair of input/output cells configured to be able to be connected to a first external resonator or a second external resonator. A first oscillator and a second oscillator are coupled to the shared pair input/output cells by a switching circuit. The switching circuit is configured to be able to connect either the first oscillator or the second oscillator to the pair of input/output cells.
Abstract: A non-conductive encapsulation cover is mounted on a support face of a support substrate to delimit, with the support substrate, an internal housing. An integrated circuit chip is mounted to the support substrate within the internal housing. A metal pattern is mounted to an internal wall of the non-conductive encapsulation cover in a position facing the support face. At least two U-shaped metal wires are provided within the internal housing, located to a side of the integrated circuit chip, and fixed at one end to the metallic pattern and at another end to the support face.
Abstract: An integrated circuit includes a secure hardware environment having a first input that receives a key number. A key generation device generates a secret key from the key number and a unique key. A signature generation device generates a signature associated with the key number. A second input of the secure hardware environment receives encrypted binary data. A decryption device operates to decrypt the received encrypted binary data using the secret key. A third input the secure hardware environment receives an authentication signature. An authentication device authorizes use of the secret key to decrypt only if the signature generated by the signature generation device is identical to the authentication signature.
Type:
Application
Filed:
January 28, 2021
Publication date:
August 5, 2021
Applicants:
STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Alps) SAS
Inventors:
Gilles PELISSIER, Nicolas ANQUET, Delphine LE-GOASCOZ
Abstract: A microelectronic device includes a PNP transistor and NPN transistor arranged vertically in a P-type doped semiconductor substrate. The PNP and NPN transistors are manufactured by: forming an N+ doped isolating well for the PNP transistor in the semiconductor substrate; forming a P+ doped region in the N+ doped isolating well; epitaxially growing a first semiconductor layer on the semiconductor substrate; forming an N+ doped well for the NPN transistor, where at least part of the N+ doped well extends into the first semiconductor layer; then epitaxially growing a second semiconductor layer on the first semiconductor layer; forming a P doped region forming the collector of the PNP transistor in the second semiconductor layer and in electrical contact with the P+ doped region; and forming an N doped region forming the collector of the NPN transistor in the second semiconductor layer and in electrical contact with the N+ doped well.
Abstract: A rotary element is equipped with a pattern representing a reflected binary code on at least three bits. A detection circuit is configured to sense the pattern and deliver an incident signal encoded in reflected binary code on at least three bits. The incident signal is converted by a transcoding circuit into an intermediate signal encoded in reflected binary code on two bits. A decoding stage decodes the intermediate signal and outputs at least one clock signal representing the amount of rotation of the rotary element and a direction signal representing the direction of rotation. A processing circuit determines the movement of the rotary element, and has at least one general purpose timer designed to receive the at least one clock signal and direction signal.
Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.
Type:
Grant
Filed:
January 29, 2019
Date of Patent:
August 3, 2021
Assignees:
STMicroelectronics (Rousset) SAS, STMicroelectronics (Grenoble 2) SAS