Abstract: A power supply voltage is monitored by a monitoring circuit including a variable current generator and a band gap voltage generator core receiving the variable current and including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the variable current generator generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

Abstract: An integrated imaging device includes a pixel having a trench that extends into the substrate. The trench is coated with an insulator and filled with a stack including a first polysilicon region and a second polysilicon region. The first and second polysilicon regions are separated from each other by a layer of insulating material. The first polysilicon region may form a gate electrode of a vertical transistor and the second polysilicon region may form an electrode of a capacitor.

Abstract: An oscillator circuit includes a first current generator circuit that generates a current complementary to absolute temperature and a second current generator that generates a current proportional to absolute temperature. A temperature slope control circuit adjusts slopes of the current complementary to absolute temperature and the current proportional to absolute temperature in a complementary fashion and adds the current complementary to absolute temperature to the current proportional to absolute temperature after slope control to produce a temperature independent current. A current control circuit adjusts magnitude of the temperature independent current to produce a magnitude adjusted temperature independent current. A current controlled oscillator generates an output signal as a function of the magnitude adjusted temperature independent current.

Abstract: An electronic device includes a support substrate to which a first electronic chip and a second electronic chip are mounted in a position situated on top of one another. First electrical connection elements are interposed between the first electronic chip and the support substrate. Second electrical connection elements are interposed between the second electronic chip and the support substrate and are situated at a distance from a periphery of the first electronic chip. Third electrical connection elements are interposed between the first electronic chip and the second electronic chip.

Abstract: A power stage in an electronic fuse circuit is driven by controller. The controller includes a first comparator set for output voltage control and a second comparator set for output current control. Each comparator set includes at least one comparator having a reference input, a feedback input, and one or more outputs. A driver circuit includes output terminals for driving the power stage. The driver circuit includes a switch that is selectively activated in response to outputs from the first and second comparator sets to clamp the voltage across the output terminals of the driver circuit. The clamp operation is made in response to feedback input to either of the first and second comparator sets having exceeded a certain reference.

Abstract: A protective circuit for an apparatus includes an accelerometer having an output and a microcontroller coupled to the output of the accelerometer. The protective circuit also includes a switch for controlling the apparatus coupled to an output of the microcontroller and a load coupled to the switch. A power source is coupled to the load and the switch. In operation the microcontroller is cable of sending a signal to the switch to turn of power to the load when a dangerous condition as detected from the accelerometer data has occurred.

Abstract: The thinning of a semiconductor substrate of an integrated circuit from a back face is detected using the measurement of a physical quantity representative of the resistance between the ends of two electrically-conducting contacts situated at an interface between an insulating region and an underlying substrate region. The two electrically-conducting contacts extend through the insulating region to reach the underlying substrate region.

Abstract: A DC-DC converter includes a transformer having primary and secondary windings, a power oscillator applying an oscillating signal to the primary winding to transmit a power signal to the secondary winding, a rectifier obtaining an output DC voltage by rectifying the power signal at the secondary winding, and comparison circuitry generating an error signal representing a difference between the output DC voltage and a reference voltage value. A transmitter connected to the secondary winding performs an amplitude modulation of the power signal at the secondary winding to transmit an amplitude modulated power signal to the primary winding, the amplitude modulation based upon the error signal and modulating a stream of data to the primary winding. A receiver coupled to the primary winding demodulates the amplitude modulated power signal to recover the error signal and the stream of data. An amplitude of the oscillating signal is controlled by the error signal.

Abstract: A resistance trimming circuit has a resolution of N=X+Y bits. Included is a first circuit with M resistors, where M=2X?1, with each of the M resistors having a resistance of R*(2Y)*i, i being an index having a value ranging from 1 to 2X?1. M switches are associated with the M resistors. Each of the M resistors is coupled between a first node and its one of the M switches, and each of the M switches couples its one of the M resistors to a second node. Included is a second circuit with P resistors, where P=2Y?1, with each of the P resistors having a resistance of R*i. P switches are associated with the P resistors. Each of the P resistors is coupled between the second node and its one of the P switches, and each of the P switches selectively couples its one of the P resistors to a third node.

Abstract: A memory cell includes a phase-change material. A via is connected to a transistor and an element for heating the phase-change material. A layer made of a material (which is one of electrically insulating or has an electric resistivity greater than 2.5·10?5 ?·m and which is sufficiently thin to be crossable by an electric current due to a tunnel-type effect) is positioned between the via and the heating element. Interfaces between the layer and materials in contact with surfaces of said layer form a thermal barrier.

Abstract: An embodiment is a system including a first wireless charging pad coupled to a wireless charging system and an energy source, the first wireless charging pad being configured to transmit an energy by a magnetic field. The system further includes a second wireless charging pad coupled to a second system, the second wireless charging pad configured to receive at least a portion of the energy from the first wireless charging system for operating the second system. Further embodiments include a least one of an electronic compass configured to provide alignment data of the first and second wireless charging pads, and an interface configured to receive the alignment data and affect an alignment of the first and second wireless charging pads.

Abstract: A circuit includes a random oscillation number generator (RONG) configured to generate first and second pulse signals at first and second RONG outputs. A first counter is coupled to the first RONG output and generates a first count at a first counter output. A second counter is coupled to the second RONG output and generates a second count at a second counter output. A selection circuit is coupled to the first and second counter outputs and to the first and second RONG outputs. A first pulse shaper is connected between the first RONG output and the first counter, and a second pulse shaper is connected between the second RONG output and the second counter.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: A circuit for controlling an anode-gate thyristor includes a first transistor that couples a thyristor gate to a first terminal to receive a potential lower than a potential of a second terminal connected to the thyristor anode. A control terminal of the first transistor is driven by a control signal which is positive with respect to the potential of the first terminal.

Abstract: A sense terminal is configured to sense a drain-to-source voltage of a field effect transistor and a drive terminal is configured to drive the gate terminal of the field effect transistor to alternatively turn the field effect transistor on and off to provide a rectified current flow in the field effect transistor channel. A comparator is configured to perform a comparison of the drain-to-source voltage of the field effect transistor with a reference threshold and to detect alternate downward and upward crossings of the reference threshold and the drain-to-source voltage. A PWM signal generator is configured to drive the gate terminal of the field effect transistor to turn the field effect transistor on and off as a result of the alternate downward and upward crossings of the reference threshold by the drain-to-source voltage.

Abstract: An integrated electronic device includes a silicon-on-insulator (SOI) substrate. At least one MOS transistor is formed in and on the SOI substrate. The at least one MOS transistor has a gate region receiving a control voltage, a back gate receiving an adjustment voltage, a source/drain region having a resistive portion, a first terminal coupled to a first voltage (e.g., a reference voltage) and formed in the source/drain region and on a first side of the resistive portion, and a second terminal generating a voltage representative of a temperature of the integrated electronic device, the second terminal being formed in the source/drain region and on a second side of the resistive portion. Adjustment circuitry generates the adjustment voltage as having a value dependent on the control voltage and on the voltage generated by the second terminal.

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract: A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.

Abstract: An integrated circuit die has a peripheral edge and a seal ring extending along the peripheral edge and surrounding a functional integrated circuit area. A test logic circuit located within the functional integrated circuit area generates a serial input data signal for application to a first end of a sensing conductive wire line extending around the seal ring between the seal ring and the peripheral edge of the integrated circuit die. Propagation of the serial input data signal along the sensing conductive wire line produces a serial output data signal at a second end of the sensing conductive wire line. The test logic circuit compares data patterns of the serial input data signal and serial output data signal to detect damage at the peripheral edge of the integrated circuit die.

Abstract: A method of quickly locking a locked loop includes generating an intermediate reference signal having an intermediate reference frequency between a desired output frequency and a reference frequency of a reference signal, and setting an output frequency of a controllable oscillator to the desired output frequency using a first locked loop having a first loop divider value. The first loop divider value is set such that the intermediate reference frequency multiplied by the first loop divider value is equal to the desired output frequency. The controllable oscillator is then coupled to a second locked loop when the first locked loop locks, with the second locked loop is being activated. The first locked loop is then deactivated.