Abstract: A circuit includes a voltage converter converting a source voltage to a supply voltage at a first node as a function of a feedback voltage at a feedback node. A first output path is coupled between the first node and a second node. Feedback circuitry compares the voltage at the second node to first and second overvoltages, and selectively couples the second node to the feedback node based thereupon. Impedance circuitry is coupled between the first node and a third node. A light emitting diode (LED) chain is coupled to the third node, and is selectively turned on and off as a function of the selective coupling of the second node to the feedback node by the feedback circuitry.

Abstract: An attenuator having an impedance that is controllable by a first setpoint signal is coupled to a transmission line. A matching circuit having an impedance that is controllable by a second setpoint signal is also coupled to the transmission line. A transformer circuit block also coupled to the transmission line has a complex impedance. A control circuit sets the first and second setpoint signals so as to control a conjugate impedance relationship between the variable impedances presented by the attenuator and matching circuit relative to the complex impedance of the transformer circuit.

Abstract: A voltage-to-time converter circuit receives a first voltage signal and produces a PWM-modulated signal having a duty-cycle proportional to the first voltage signal. A current integrator circuit receives the PWM-modulated signal from the voltage-to-time converter circuit block and produces an output signal by integrating a current signal from a current source over integration time intervals having a duration which is a function of the duty-cycle of the PWM-modulated signal. The current signal is proportional to a second voltage signal. The output signal is accordingly proportional to a product of the first voltage signal and the current signal, which is furthermore proportional to a product of the first voltage signal and the second voltage signal.

Abstract: Disclosed herein is a touch screen controller operable with a touch screen. The touch screen controller includes input circuitry to receive touch data from the touch screen, and processing circuitry. The processing circuitry acquires mutual capacitance touch strength values from the touch screen, determines when the mutual capacitance touch strength values define a pre-validated donut touch pattern, and reads self capacitance touch strength values for lines that are contained within bounds of the pre-validated donut touch pattern. If the self capacitance touch strength values for lines contained within bounds of the pre-validate donut touch pattern contain a singular peak value, the processing circuitry validates the pre-validated donut touch pattern as representing a single touch.

Abstract: An analog multiplexer includes inputs and one output. A switching circuit is coupled between each input and the output. Each switching circuit includes an NMOS switching module, having an on state and an off state, and a control module supplied by a first supply voltage and operating to reduce leakage currents of the NMOS switching module when in the off state. The control module further operates to make the first NMOS switching module bidirectional irrespective of voltages present at the input and at the output.

Abstract: An electronic integrated circuit chip includes a first transistor arranged inside and on top of a solid substrate, a second transistor arranged inside and on top of a layer of semiconductor material on insulator having a first thickness, and a third transistor arranged inside and on top of a layer of semiconductor material on insulator having a second thickness. The second thickness is greater than the first thickness. The solid substrate extends underneath the layers of semiconductor material and is insulated from those layers by the insulator.

Abstract: In an embodiment, a TDC includes: a clock input configured to receive a reference clock that is synchronized with a first event; a clock generation circuit configured to generate a first clock at a first output of the clock generation circuit based on the reference clock, the first clock having a second frequency lower than the reference clock; a data input configured to receive an input stream of pulses, where the input stream of pulses is based on the first event; a sampling circuit having an input register, the sampling circuit coupled to the data input, the sampling circuit configured to continuously sample the input stream of pulses into the input register based on the reference clock; and output terminals configured to stream time stamps based on the input stream of pulses at the second frequency, where the stream of time stamps is synchronized with the first clock.

Abstract: A MOS transistor is produced on and in an active zone which includes a source region and a drain region. The active zone is surrounded by an insulating region. A conductive gate region of the transistor has two flanks which extend transversely to a source-drain direction, and the conductive gate region overlaps two opposite edges of the active zone act overlap zones. The conductive gate region includes, at a location of at least one overlap zone, at least one conductive tag which projects from at least one flank at a foot of the conductive gate region. The conductive tag covers a part of the active zone and a part of the insulating region.

Abstract: Disclosed herein is a circuit including first and second input circuits. The first input circuit is configured to receive first and second logic signals and to source current to first and second control nodes if at least one of the first and second logic signals is at a logic low. The second input circuit is configured to receive the first and second logic signals and to sink current from the first and second control nodes if at least one of the first and second logic signals is at a logic high. A first output circuit is configured to source current to an output node when current is sunk from the first control node. A second output circuit is configured to sink current from the output node when current is sourced to the second control node. A latch is coupled to the output node.

Abstract: A decoder decodes a memory address and selectively drives a select line (such as a word line or mux line) of a memory. An encoding circuit encodes the data on select lines to generate an encoded address. The encoded address and the memory address are compared by a comparison circuit to generate a test result signal which is indicative of whether the decoder is operating properly. To test the comparison circuit for proper operation, a subset of an MBIST scan routine causes the encoded address to be blocked from the comparison circuit and a force signal to be applied in its place. A test signal from the scan routine and the force signal are then compared by the comparison circuit, with the test result signal generated from the comparison being indicative of whether the comparison circuit itself is operating properly.

Abstract: Disclosed herein is a method of operating a non-volatile static random access NVSRAM memory formed from words. Each word includes NVSRAM cells, each of those NVSRAM cells having an SRAM cell and an electronically erasable programmable read only memory EEPROM cell. If the SRAM cells of a word have been accessed since powerup, data is read from the NVSRAM cells of that word through the SRAM cells. However, if the SRAM cells of that word have not been written since powerup, data is read from the NVSRAM cells of that word through the EEPROM cells.

Abstract: An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.

Abstract: A memory device includes first and second dummy word line portions. A dummy word line driver drives the first dummy word line portion. A voltage dropping circuit causes a voltage on the second dummy word line to be less than a voltage on the first dummy word line. At least one dummy memory cell is coupled to the second dummy word line portion, remains in standby until assertion of the second dummy word line, and performs a dummy cycle in response to assertion of the second dummy word line. A reset signal generation circuit generates a reset signal in response to completion of a dummy cycle by the at least one dummy memory cell. An internal clock signal is generated from an external clock signal and the reset signal and is used in performing a read and/or write cycle to a memory array.

Abstract: A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.

Abstract: An acquisition stage receives a digital input signal and generates therefrom a first digital signal and a second digital signal complementary thereto. First and second processing stages receive the first and second digital signals and generate therefrom first and second analog signals in time with first and second complementary clock signals. An output stage generates an internal clock signal equivalent to one of: the first clock signal phase shifted by a duration of a transient occurring during a period of the first clock signal, or the second clock signal phase shifted by a duration of a transient occurring during a period of the second clock signal. The output stage produces an analog output signal equal to the first analog signal when the internal clock signal is at a first logic level, and equal to the second analog signal when the internal clock signal is at a second logic level.

Abstract: The present disclosure relates to a method for forming a cavity that traverses a stack of layers including a bottom layer, a first portion of which locally presents an excess thickness, the method comprising a first step of non-selective etching and a second step of selective etching vertically in line with the first portion.

Abstract: An interconnect circuit includes a plurality of input interfaces and a plurality of output interfaces. A plurality of source devices are respectively coupled to the input interfaces. A target device has a plurality of access ports respectively coupled to the output interfaces. Each source device is configured to deliver transactions to the target device. Programmable control circuit is configured to deliver, to the interconnect circuit, a control word designating an access port assigned to this source device. The interconnect circuit is configured to route the transaction from the corresponding input interface to the output interface that is coupled to this access port and to deliver the transaction to the access port, the content of each transaction delivered to an access port being identical to the content of the corresponding transaction delivered by the source equipment whatever the selected access port.

Abstract: The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-?BXT type, where X is selected from Ca, Sn, Mn, and Nb, and ? is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, esters, ketones, ethers, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

Abstract: An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.

Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.