Patents Assigned to STMicroelectronics
  • Patent number: 8436909
    Abstract: In one embodiment, a light sensor includes four cell arrays, one for each color of the Bayer pattern, and four lenses each focusing the light coming from the scene to be captured on a respective cell array. The lenses are oriented such that at least a second green image, commonly provided by the fourth cell array, is both horizontally and vertically shifted (spaced) apart by half a pixel pitch from a first (reference) green image. In a second embodiment, the four lenses are oriented such that the red and blue images are respectively shifted (spaced) apart by half a pixel pitch from the first or reference green image, one horizontally and the other vertically, and the second green image is shifted (spaced) apart by half a pixel pitch from the reference green image both horizontally and vertically.
    Type: Grant
    Filed: October 21, 2008
    Date of Patent: May 7, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Marco Farina, Mirko Ignazio Guarnera, Massimo Mancuso, Giuseppe Messina, Alessandro Capra
  • Patent number: 8436440
    Abstract: A method for manufacturing a back-side illuminated image sensor, including the steps of: forming, inside and on top of an SOI-type silicon layer, components for trapping and transferring photogenerated carriers and isolation regions; forming a stack of interconnection levels on the silicon layer and attaching, on the interconnect stack, a semiconductor handle; removing the semiconductor support; forming, in the insulating layer and the silicon layer, trenches reaching the isolation regions; depositing a doped amorphous silicon layer, more heavily doped than the silicon layer, at least on the walls and the bottom of the trenches and having the amorphous silicon layer crystallize; and filling the trenches with a reflective material.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: May 7, 2013
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Michel Marty, François Leverd
  • Patent number: 8437480
    Abstract: A time-domain method of adaptively levelling the loudness of a digital audio signal is proposed. It selects a proper frequency weighting curve to relate the volume level to the human auditory system. The audio signal is segmented into frames of a suitable duration for content analysis. Each frame is classified to one of several predefined states and events of perceptual interest is detected. Four quantities are updated each frame according to the classified state and detected event to keep track of the signal. One quantity measures the long-term loudness and is the main criterion for state classification of a frame. The second quantity is the short-term loudness that is mainly used for deriving the target gain. The third quantity measures the low-level loudness when the signal is deemed to not contain important content, giving a reasonable estimate of noise floor. A fourth quantity measures the peak loudness level that is used to simulate the temporal masking effect.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: May 7, 2013
    Assignee: STMicroelectronics Asia Pacific Pte Ltd.
    Inventors: Wenbo Zong, Sapna George
  • Publication number: 20130105982
    Abstract: A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.
    Type: Application
    Filed: November 2, 2011
    Publication date: May 2, 2013
    Applicants: STMICROELECTRONICS GRENOBLE2 SAS, STMICROELECTRONICS PTE LTD.
    Inventors: Yonggang Jin, Romain Coffy, Jerome Teysseyre
  • Publication number: 20130105893
    Abstract: A DMOS on SOI transistor including an elongated gate extending across the entire width of an active area; a drain region of a first conductivity type extending across the entire width of the active area; a source region of the first conductivity type extending parallel to the gate and stopping before the limit of the active area at least on one side of the transistor width, an interval existing between the limit of the source region and the limit of the active area; a bulk region of a second conductivity type extending under the gate and in said interval; a more heavily-doped region of the second conductivity type extending on a portion of said interval on the side of the limit of the active area; and an elongated source metallization extending across the entire width of the active area.
    Type: Application
    Filed: October 25, 2012
    Publication date: May 2, 2013
    Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS SA
    Inventors: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
  • Publication number: 20130106632
    Abstract: The disclosure is directed to an interleaved analog-to-digital converter having: first, second and third sub-converters; a control block configured to control the first sub-converter to sample a test signal and the second sub-converter to sample an input signal during a first sampling period, and to control the second sub-converter to sample the test signal and the third sub-converter to sample the input signal during a second sampling period.
    Type: Application
    Filed: November 2, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS
    Inventor: STMicroelectronics (Grenoble 2) SAS
  • Publication number: 20130105973
    Abstract: An eWLB package for 3D and PoP applications includes a redistribution layer on a support wafer. A semiconductor die is coupled to the redistribution layer, and solder balls are also positioned on the redistribution layer. The die and solder balls are encapsulated in a molding compound layer, which is planarized to expose top portions of the solder balls. A second redistribution layer is formed on the planarized surface of the molding compound layer. A ball grid array can be positioned on the second redistribution layer to couple the semiconductor package to a circuit board, or additional semiconductor dies can be added, each in a respective molding compound layer. The support wafer can act as an interposer, in which case it is processed to form TSVs in electrical contact with the first redistribution layer, and a redistribution layer is formed on the opposite side of the support substrate, as well.
    Type: Application
    Filed: November 2, 2011
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS PTE LTD.
    Inventors: Kah Wee Gan, Yaohuang Huang, Yonggang Jin
  • Publication number: 20130106241
    Abstract: An embodiment of a microelectromechanical device having a first structural element, a second structural element, which is mobile with respect to the first structural element, and an elastic supporting structure, which extends between the first and second structural elements to enable a relative movement between the first and second structural elements. The microelectromechanical device moreover possesses an anti-stiction structure, which includes at least one flexible element, which is fixed only with respect to the first structural element and, in a condition of rest, is set at a first distance from the second structural element. The anti-stiction structure is designed to generate a repulsive force between the first and second structural elements in the case of relative movement by an amount greater than the first distance.
    Type: Application
    Filed: December 18, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS S.R.L.
    Inventor: STMicroelectronics S.r.I.
  • Publication number: 20130105952
    Abstract: One or more embodiments are directed to encapsulating structure comprising: a substrate having a first surface and housing at least one conductive pad, which extends facing the first surface and is configured for being electrically coupled to a conduction terminal at a reference voltage; a cover member, set at a distance from and facing the first surface of the substrate; and housing walls, which extend between the substrate and the cover member. The substrate, the cover member, and the housing walls define a cavity, which is internal to the encapsulating structure and houses the conductive pad. Moreover present inside the cavity is at least one electrically conductive structure, which extends between, and in electrical contact with, the cover member and the conductive pad for connecting the cover member electrically to the conduction terminal.
    Type: Application
    Filed: October 24, 2012
    Publication date: May 2, 2013
    Applicant: STMicroelectronics S.r.l.
    Inventor: STMicroelectronics S.r.l.
  • Publication number: 20130111555
    Abstract: A system and method for realizing specific security features for a mobile device that may store sensitive and private data by providing secured communications to a paired remote device. In this respect, both the mobile device (which may be a mobile phone, for example) and the paired remote device (which may be a keychain, for example) include a SIM card that may have identification data stored therein. Once paired, the two devices may communicate encrypted security messages back and forth in order to implement various security measures to protect data and wireless communications. Such messages may be generated from initial information known only to each respective device such as a randomly generated offset number and a common time reference.
    Type: Application
    Filed: October 27, 2011
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.
    Inventor: Olivier LENEEL
  • Publication number: 20130110898
    Abstract: A signal processor includes one or more memory banks, wherein each memory bank stores filter coefficients; and one or more coefficient multiplexer units; each coefficient multiplexer unit being associated with a memory bank, and retrieves a filter coefficient based on a number of received input samples. The processor includes one or more multiply and accumulate (MAC) units, each MAC unit being associated with a coefficient multiplexer unit and determines a product of the retrieved filter coefficient with an input sample; retrieves a previous value stored in an associated register; computes a summation of the previous value and the product; and stores the summation in the associated register. The processor includes an output multiplexer unit to select a register, and to provide a value stored in the register as an output.
    Type: Application
    Filed: May 10, 2012
    Publication date: May 2, 2013
    Applicant: STMicroelectronics International NV
    Inventors: Ankur BAL, Anupam JAIN, Neha BHARGAVA
  • Publication number: 20130104652
    Abstract: A driving circuit for a gyroscope device provided with a micromechanical detection structure having a driving mass, which is driven in resonance condition and elastically coupled to which is a sensing mass for enabling detection of angular velocity; the driving circuit has: a set of driving electrodes, coupled to the driving mass; a driving stage supplying driving signals to the set of driving electrodes to cause oscillation in resonance condition of the driving mass; and a reading stage, which detects movement of the driving mass to implement a feedback control of the driving signals. In particular, the reading stage is selectively coupleable to the set of driving electrodes in a way temporally alternative to the driving stage, for discrete-time detection of the movement of the driving mass.
    Type: Application
    Filed: October 25, 2012
    Publication date: May 2, 2013
    Applicant: STMicroelectronics S.r.l.
    Inventor: STMicroelectronics S.r.l.
  • Publication number: 20130107595
    Abstract: A method for controlling at least one switch in a power converter, wherein the switching speed of the switch dynamically varies according to a measurement of a quantity representative of the efficiency of the converter.
    Type: Application
    Filed: September 14, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS (TOURS) SAS
    Inventors: Frédéric Gautier, Bertrand Rivet
  • Publication number: 20130105855
    Abstract: A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its base connected to a control terminal, and its collector connected to a terminal intended to be connected to a first reference voltage, the main terminal of the triac on the side of the transistor being intended to be connected to a second reference voltage, the transistor being formed in a first well of the second conductivity type and the triac comprising on the transistor side a second well of the second conductivity type, the first and second wells being formed so that the substrate-well breakdown voltage of the transistor is greater than the substrate-well breakdown voltage of the triac by at least the difference between the first and second reference voltages.
    Type: Application
    Filed: October 23, 2012
    Publication date: May 2, 2013
    Applicant: STMicroelectronics (Tours) SAS
    Inventor: Yannick Hague
  • Publication number: 20130105991
    Abstract: A process for manufacturing a 3D or PoP semiconductor package includes forming a redistribution layer on a reconstituted wafer, then laser drilling a plurality of apertures in the reconstituted wafer, extending from an outer surface of the reconstituted wafer to intersect electrical traces in the first redistribution layer. A solder ball is then positioned adjacent to an opening of each of the apertures. The solder balls are melted and allowed to fill the apertures, making contact with the respective electrical traces and forming a plurality of solder columns. The outer surface of the reconstituted wafer is then planarized, and a second redistribution layer is formed on the planarized surface. The solder columns serve as through-vias, electrically coupling the first and second redistribution layers on opposite sides of the reconstituted wafer.
    Type: Application
    Filed: December 6, 2011
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS PTE LTD.
    Inventors: Kah Wee Gan, Yaohuang Huang, Yonggang Jin
  • Publication number: 20130106631
    Abstract: The present disclosure includes calibration circuitry for adjusting the bandwidth of at least one sub-converter of an interleaved analog to digital converter (ADC), the at least one sub-converter having an input switch coupled to an input line of the ADC, the calibration circuitry having a control circuit adapted to adjust a bulk voltage of a transistor forming the input switch.
    Type: Application
    Filed: November 2, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS
    Inventor: STMICROELECTRONICS (GRENOBLE 2) SAS
  • Publication number: 20130104950
    Abstract: Method of wireless communication between a first device and a second device, in which, the first device and the second device comprising respectively a first thermoelectric generator and a second thermoelectric generator, the two thermoelectric generators being in thermal coupling, a first signal is generated within the first device, the first thermoelectric generator is electrically powered as a function of the first signal so as to create a first thermal gradient in the said first generator and a second thermal gradient in the second generator, and a second signal is generated within the second device on the basis of the electrical energy produced by the second thermoelectric generator in response to the said second thermal gradient.
    Type: Application
    Filed: October 24, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventor: STMicroelectronics (Rousset) SAS
  • Publication number: 20130109111
    Abstract: A method performs electrical testing and assembly of an electronic device on a wafer and comprising a pad made in an oxide layer covered by a passivation layer. The method includes connecting the electronic device to a testing apparatus; providing said electronic device with a metallization layer extending on the passivation layer from the pad to a non-active area of said wafer. The method comprises-performing the electrical testing on wafer of the electronic device by placing a probe of on a portion of the extended metallization layer; performing the cut of said wafer, reducing the extension of the metallization layer to the edge of the electronic device; embedding the device inside a package, forming on the metallization layer an electrical connection configured to connect the metallization layer to a circuit in said package.
    Type: Application
    Filed: December 20, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS S.R.L.
    Inventor: STMicroelectronics S.r.l.
  • Publication number: 20130107060
    Abstract: A system for adjusting the light uniformity of a monitor. The system comprises a camera for capturing a test pattern image on a display of the monitor and a controller configured to select the test pattern image and to cause the monitor to display the selected test pattern image. The controller receives the captured image from the camera and compares pixel values from the captured image to known pixel values associated with the selected test pattern image. The selected test pattern image has an ideal uniform light distribution and the captured image has a non-uniform light distribution. In response to the comparison, the controller calculates a compensation light distribution that may be combined with the non-uniform light distribution to generate a resulting image on the display of the monitor having a resulting light distribution that approximates the ideal uniform light distribution.
    Type: Application
    Filed: November 1, 2012
    Publication date: May 2, 2013
    Applicant: STMICROELECTRONICS, INC.
    Inventors: Dong Wei, Zhao Huang, Greg Neal, Caba Moldvai
  • Patent number: 8433084
    Abstract: A microelectromechanical-acoustic-transducer assembly has: a first die integrating a MEMS sensing structure having a membrane, which has a first surface in fluid communication with a front chamber and a second surface, opposite to the first surface, in fluid communication with a back chamber of the microelectromechanical acoustic transducer, is able to undergo deformation as a function of incident acoustic-pressure waves, and faces a rigid electrode so as to form a variable-capacitance capacitor; a second die, integrating an electronic reading circuit operatively coupled to the MEMS sensing structure and supplying an electrical output signal as a function of the capacitive variation; and a package, housing the first die and the second die and having a base substrate with external electrical contacts. The first and second dice are stacked in the package and directly connected together mechanically and electrically; the package delimits at least one of the front and back chambers.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: April 30, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Sebastiano Conti, Benedetto Vigna, Mario Francesco Cortese