Abstract: A wafer level chip scale package (WLCSP) with portions that have different thicknesses. A first passive surface of a die in the WLSCP includes a plurality of surfaces. The plurality of surfaces may include inclined surfaces or flat surfaces. Thicker portions of die, with more semiconductor material remaining are non-critical portions that increase a WLCSP's strength for further processing and handling after formation, and the thinner portions are critical portions that reduce a Coefficient of Thermal Expansion (CTE) mismatch between a WLCSP and a PCB.

Abstract: A microelectromechanical device has a first tiltable mirror structure extending in a horizontal plane defined by first and second horizontal axes and includes a fixed structure defining a frame delimiting a cavity, a tiltable element carrying a reflecting region, elastically suspended above the cavity having first and second median axes of symmetry, elastically coupled to the frame by first and second coupling structures on opposite sides of the second horizontal axis. The first tiltable mirror structure has a driving structure coupled to the tiltable element to cause rotation around the first horizontal axis. The first tiltable mirror structure is asymmetrical with respect to the second horizontal axis and has, along the first horizontal axis, a first extension on a first side of the second horizontal axis, and a second extension greater than the first extension, on a second side of the second horizontal axis opposite to the first side.

Abstract: The present description concerns a circuit for converting from a first alternating voltage to a second voltage. The circuit includes: a first thyristor; a first control circuit of the first thyristor; a power factor correction circuit comprising a coil; and a first circuit configured to convert a third voltage into a fourth DC voltage. The third voltage corresponds to a difference between a potential at a first node connected to an output node of the coil and a reference potential. The fourth DC voltage is configured to supply the first control circuit of the first thyristor, and is referenced with respect to the same reference potential as the third voltage.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: The present disclosure is directed to a thin substrate package and a lead frame method of fabricating the semiconductor package. The semiconductor package includes a first lead frame portion and a second lead frame portion. A substrate is positioned in a center opening between the first lead frame portion and the second lead frame portion, the substrate having a thickness less than or equal to 0.10-millimeters (mm). A first die having a plurality of wires is positioned on the substrate by an adhesive. A molding compound covers the first and second lead frame portions, the substrate, and the first die.

Abstract: A switched-mode power supply includes a voltage ramp generation circuit that generates a voltage ramp signal. The voltage ramp generation circuit includes, selectively connected in parallel, at least three capacitors. The selective connection of the capacitors is made according to a value of an internal power supply voltage of the switched-mode power supply.

Abstract: A low power crystal oscillator circuit has a high power part and a low power part. Crystal oscillation is initialized using the high power part. An automatic amplitude control circuit includes a current subtractor that decreases current in the high power part as an amplitude of the crystal oscillation increases. A current limiting circuit may limit current in the low power part in order to further reduce power consumption by the low power crystal oscillator circuit. Additionally, an automatic amplitude detection circuit may turn off the high power part after the amplitude of the crystal oscillation reaches a predetermined level in order to further reduce power consumption of the low power crystal oscillator circuit, and may turn back on the high power part after the amplitude of the crystal oscillation reaches a second predetermined level in order to maintain the crystal oscillation.

Abstract: An in-memory computation circuit includes a memory array including sub-arrays of with SRAM cells connected in rows by word lines and in columns by local bit lines. A row controller circuit selectively actuates one word line per sub-array for an in-memory compute operation. A global bit line is capacitively coupled to many local bit lines in either a column direction or row direction. An analog global output voltage on each global bit line is an average of local bit line voltages on the capacitively coupled local bit lines. The analog global output voltage is sampled and converted by an analog-to-digital converter (ADC) circuit to generate a digital decision signal output for the in-memory compute operation.

Abstract: An optical element is positioned in a holder over a laser light source. The optical element includes an electrical trace that is coupled between first and second pads. A sensing circuit that is also coupled to the first and second pads performs a voltage/current sensing operation to detect displacement of the optical element and control enablement of the laser light source.

Abstract: Embodiments of the present disclosure are directed to leadframe semiconductor packages having die pads with cooling fins. In at least one embodiment, the leadframe semiconductor package includes leads and a semiconductor die (or chip) coupled to a die pad with cooling fins. The cooling fins are defined by recesses formed in the die pad. The recesses extend into the die pad at a bottom surface of the semiconductor package, such that the bottom surfaces of the cooling fins of the die pad are flush or coplanar with a surface of the package body, such as an encapsulation material. Furthermore, bottom surfaces of the cooling fins of the die pad are flush or coplanar with exposed bottom surfaces of the leads.

Abstract: In a digital communication system, a master device and a number of slave devices are coupled in communication with the master device over a shared data communication bus. During an address assignment procedure, the master device assigns different respective dynamic addresses to the slave devices in order to address the slave devices for data communication; during the address assignment procedure, the slave devices are arranged in a daisy-chain configuration, wherein each slave device has a daisy-chain input and a daisy-chain output, the daisy-chain input of a slave device being coupled to the daisy-chain output of a previous slave device in the daisy chain configuration, the daisy-chain input of a first slave device being coupled to a daisy-chain enabling output of the master device; in particular, the master device is configured to assign the respective dynamic addresses to the slave devices based on their arrangement in the daisy-chain configuration.

Abstract: In an embodiment, an integrated circuit includes: a voting circuit including N scan flip-flops, where N is an odd number greater than or equal to 3, and where the N scan flip-flops includes a first scan flip-flop and a second scan flip-flop, where an output of the first scan flip-flop is coupled to a scan input of the second scan flip-flop; a scan chain including the N scan flip-flops of the voting circuit, and third and fourth scan flip-flops, the scan chain configured to receive a scan enable signal; and a scan enable control circuit configured to control a scan enable input of the first or second scan flip-flops based on the scan enable signal and based on a scan input of the third scan flip-flop or an output of the fourth scan flip-flop.

Abstract: Described herein is a method including measuring a current in a wire, normalizing the measured current, and comparing the normalized measured current to a control curve. The control curve is a function of a series of normalized current magnitudes and reaction times for corresponding ones of that series of normalized current magnitudes. The method further includes limiting the current in the wire based upon the comparison. The reaction times for ones of the series of normalized current magnitudes are times at which current limitation would occur if the normalized current remained at an associated normalized current magnitude.

Abstract: A semiconductor substrate has a trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the lower part of the trench, and a first conductive material in the lower part is insulated from the semiconductor substrate by the first insulating layer to form a field plate electrode of a transistor. A second insulating layer lines sidewalls of the upper part of said trench. A third insulating layer lines a top surface of the first conductive material at a bottom of the upper part of the trench. A second conductive material fills the upper part of the trench. The second conductive material forms a gate electrode of the transistor that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the third insulating layer.

Abstract: An embodiment apparatus comprises a switching-type output power stage, a modulator circuit configured for carrying out a pulse-width modulation and converting an electrical input signal into an input signal pulsed between two electrical levels, having a mean value proportional to the amplitude of the input signal, and a circuit arrangement for controlling saturation of an output signal supplied by the switching-type output power stage. The circuit arrangement comprises a pulse-remodulator circuit, between the output of the modulator circuit and the input of the switching-type output power stage, that is configured for supplying, as a driving signal to the switching-type output power stage, a respective modulated signal pulsed between two electrical levels, measuring a pulse width as pulse time interval elapsing between two consecutive pulsed-signal edges of the pulsed input signal, and, if the measurement indicates that the latter is below a given minimum value, remodulating the pulsed input signal.

Abstract: A method for presence detection in an environment to be monitored, includes generating an electric charge signal in a condition of absence of presence in the environment to be monitored. An electric charge signal is generated in an operating condition in which a person may be present in the environment. The two generated signals are processed and the results of the processing are compared. Processing the signals includes representing in a biaxial reference system the value of the charge signal considered and its derivative with respect to time, and identifying a plurality of points in the reference system. By comparing the position of the points acquired during the possible human presence with those of the base shape, a variation indicating the actual human presence may be detected. In this case an alarm signal is generated.

Abstract: A method of processing an electrical signal transduced from a voice signal is disclosed. A classification model is applied to the electrical signal to produce a classification indicator. The classification model has been trained using an augmented training dataset. The electrical signal is classified as either one of a first class and a second class in a binary classification. The classifying being performed is a function of the classification indicator. A trigger signal is provided to a user circuit as a result of the electrical signal being classified in the first class of the binary classification.

Abstract: An electronic device integrates an antenna. To fabricate such an electronic device, first antenna elements are formed on a first surface of a first substrate. The first substrate is then diced to form antenna chips. Each antenna chip includes, on a first surface corresponding to the first surface of the first substrate, one of the first antenna elements. One of the antenna chips is then bonded onto a transfer substrate. This bonding is made between a second surface of the antenna chip, orthogonal to its first surface, and an upper surface of the transfer substrate.

Abstract: The electronic control unit includes a communication circuit adapted to receive intelligent transport system messages, an authentication circuit designed to authenticate the received messages, a non-volatile memory configured to record the authenticated received messages, and a secure element. The secure element includes a blacklist of automatically excluded senders and is configured to directly reject a received message from a sender on the blacklist without authentication using the authentication circuit. Alternatively, the secure element includes a whitelist of automatically allowed senders and is configured to directly record a received message from a sender on the whitelist in the non-volatile memory without authentication using the authentication circuit.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.