Abstract: An audio amplifier includes: a buck controller configured to control an output voltage at a first supply terminal, the output voltage selected from a set including a plurality of output voltages, where the output voltage takes a settling time to settle; a first audio bridge including: a class-AB driver stage coupled to the first supply terminal, and a delay insertion circuit configured to receive a processed digital stream and provide the processed digital stream to the class-AB driver stage a delay time after receiving the processed digital stream, where the delay time is based on the settling time; and an audio amplitude detector configured to detect a first peak amplitude in the first digital audio stream, where the buck controller is configured to select a lowest output voltage from the set that is higher than the first peak amplitude plus a headroom voltage.

Abstract: A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.

Abstract: In an embodiment, a method includes performing a calibration of a first touch cell of a touch screen, where performing the calibration includes: receiving a first code associated with the first touch cell; receiving a second code associated with the first touch cell; determining whether there is an indication of a touch of the touch screen based on the first and second codes; generating a raw code based on the first or second codes; receiving a third code associated with the first touch cell; determining whether the third code matches the raw code; and in response to determining that there is no indication of a touch of the touch screen based on the first and second codes, and that the third code matches the raw code, updating a calibration code associated with the first touch cell based on the raw code or the third code.

Abstract: A switching regulator circuit has a high side (HS) transistor actuated during on time (TON) of a duty cycle. The output current of the switching regulator circuit is determined from sensing a transistor current flowing through the HS transistor during HS transistor on time (TON) and dividing the sensed transistor current by the duty cycle to generate an output signal indicative of the output current of the switching regulator circuit. The duty cycle is determined from a ratio of the on time (TON) and off time (TOFF) of the switching regulator circuit.

Abstract: A time-of-flight system includes an emitter-circuit generating and directing pulses of light toward a target, and a receiver-circuit including a photodetector coupled between a bias node and a sensing node to detect pulses that have reflected off the target, a comparison circuit comparing a sense voltage at the sensing node to a reference, a timing measurement circuit measuring elapsed time between generation of a given pulse and detection thereof after reflection off the target, and a programmable current sink that sinks a current from the sensing node equal to a portion of a photocurrent generated by the photodetector due to detection of ambient light. A timing-generation circuit synchronizes generation of the pulses and measurement of elapsed time by the timing circuit. A processor adjusts a magnitude of the current sunk from the sensing node based upon output of the comparison circuit when the emitter circuit is deactivated.

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.

Abstract: This disclosure relates to a time-of-flight sensor including, on a same base substrate, a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier. The optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, with the signal reception sensor array being configured to detect light reflected by the image scene. The reference sensor and the signal reception sensor array are based on semiconductor nanoparticles.

Abstract: A switching regulator circuit has a switching transistor actuated during a switching on phase of a duty cycle. The current flowing through an inductor of the switching regulator circuit is determined from sensing a transistor current flowing through the switching transistor during switching on phase and dividing the sensed transistor current by the duty cycle to generate an output signal indicative of the inductor current of the switching regulator circuit. The duty cycle is determined from a detected ratio of switching transistor turn on time during the switching on phase and switching transistor turn off time during a switching off phase as controlled by the duty cycle control of the regulator circuit.

Abstract: A method of manufacturing a PN junction includes successive steps for: forming at least one trench in a semiconductor substrate of a first conductivity type; and filling the at least one trench with a semiconductor material of a second conductivity type, different from the first conductivity type.

Abstract: A ToF sensor includes an array of pixels having first and second subsets of pixels, first and second pluralities of TDCs, a routing bus having first and second pluralities of bus drivers, and a controller configured to: when the first subset of pixels is active and the second subset of pixels is not active, control the first plurality of bus drivers to route events from half of the pixels of the first subset to the first plurality of TDCs and control the first and second pluralities of bus drivers to route events from the other half of the pixels of the first subset to the second plurality of TDCs, and when the first subset of pixels is not active and the second subset of pixels is active, control the first plurality of bus drivers to route events from the second subset of pixels to the first plurality of TDCs.

Abstract: A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

Abstract: A system includes a random access memory organized into individually addressable words. Streaming access control circuitry is coupled to word lines of the random access memory. The streaming access control circuitry responds to a request to access a plurality of individually addressable words of a determined region of the random access memory by generating control signals to drive the word lines to streamingly access the plurality of individually addressable words of the determined region. The request indicates an offset associated with the determined region and a pattern associated with the streaming access.

Abstract: A charge amplifier circuit is provided. The charge amplifier circuit is couplable to a transducer that generates an electrical charge that varies with an external stimulus. The charge amplifier circuit includes an amplification stage having an input node, couplable to the transducer, and an output node. The amplification stage biases the input node at a first direct current (DC) voltage. The charge amplifier circuit includes a feedback circuit, which includes a feedback capacitor, electrically coupled between the input and output nodes of the amplification stage. The feedback circuit includes a resistor electrically coupled to the input node, and a level-shifter circuit, electrically coupled between the resistor and the output node. The level-shifter circuit biases the output node at a second DC voltage and as a function of a difference between the second DC voltage and a reference voltage.

Abstract: An integrated circuit includes an N-type laterally diffused metal-oxide semiconductor (NLDMOS) transistor including an active semiconductor substrate region having P-type conductivity. The integrated circuit further includes a buried semiconductor region having N+-type conductivity underneath the active substrate region. The buried semiconductor region is more heavily doped than the active semiconductor substrate region.

Abstract: A processing system includes a plurality of configuration data clients; each associated with a respective address and including a respective register, a hardware block, a non-volatile memory, and a hardware configuration circuit. A respective configuration data client receives a respective first configuration data and stores it in the respective register. The hardware block is coupled to at least one of the configuration data clients and changes operation as a function of the respective first configuration data stored in the respective registers. The non-volatile memory includes second configuration data stored as data packets including the respective first configuration data and an attribute field identifying the respective address of one of the configuration data clients. The hardware configuration circuit sequentially reads the data packets from the non-volatile memory and transmits the respective first configuration data to the respective configuration data client.

Abstract: The present disclosure relates to a die comprising metal pillars extending from a surface of the die, the height of each pillar being substantially equal to or greater than 20 ?m, the pillars being intended to raise the die when fastening the die by means of a bonding material on a surface of a support. The metal pillars being inserted into the bonding material at which point the bonding material is annealed to be cured and hardened solidifying the bonding material to couple the die to the surface of the support.

Abstract: The present disclosure relates to a device comprising two error amplifier stages having their first inputs interconnected, their second inputs interconnected and their outputs coupled to an output of the device, each stage comprising an operational amplifier; a circuit for calibrating the amplifier; a switch coupling an input of the amplifier to the first input; a switch coupling another input of the amplifier to the second input; a switch coupling an output of the amplifier to the stage output; a switch having on state which short-circuits the inputs of the amplifier; and a switch coupling the output of the amplifier to the calibration circuit.

Abstract: A method can be used for controlling pixel scanning within a range detector. A spatially controllable point light source generates a first series of light source pulses associated with a first spatial direction. The first series of light source pulses are generated during a first time period. The spatially controllable point light source generates a second series of light source pulses associated with a second spatial direction. The second series of light source pulses are generated during a second time period that overlaps with the first time period so that the second series of light source pulses are started during the first series of light source pulses.

Abstract: A method for writing into a one-time programmable memory of an integrated circuit includes attempting, by a memory control circuit of the integrated circuit, to write data in at least one first register of the one-time programmable memory; verifying, by the memory control circuit, whether the data has been correctly written in the at least one first register; and, in case the data has not been correctly written in the at least one first register, attempting, by the memory control circuit, to write the data in at least one second register of the one-time programmable memory.