Abstract: A memory device includes a semiconductor substrate with memory cell and logic regions. A floating gate is disposed over the memory cell region and has an upper surface terminating in opposing front and back edges and opposing first and second side edges. An oxide layer has a first portion extending along the logic region and a first thickness, a second portion extending along the memory cell region and has the first thickness, and a third portion extending along the front edge with the first thickness and extending along a tunnel region portion of the first side edge with a second thickness less than the first thickness. A control gate has a first portion disposed on the oxide layer second portion and a second portion vertically over the front edge and the tunnel region portion of the first side edge. A logic gate is disposed on the oxide layer first portion.

Abstract: Memory cells formed on upwardly extending fins of a semiconductor substrate, each including source and drain regions with a channel region therebetween, a floating gate extending along the channel region and wrapping around the fin, a word line gate extending along the channel region and wrapping around the fin, a control gate over the floating gate, and an erase gate over the source region. The control gates are a continuous conductive strip of material. First and second fins are spaced apart by a first distance. Third and fourth fins are spaced apart by a second distance. The second and third fins are spaced apart by a third distance greater than the first and second distances. The continuous strip includes a portion disposed between the second and third fins, but no portion of the continuous strip is disposed between the first and second fins nor between the third and fourth fins.

Abstract: The invention relates to a positioning method and device for a hologram in a card-type holographic storage medium, which can be used for beam positioning of cross-shift multiplexing and belong to the technical field of optical holographic storage. A guide groove in a grid shape is engraved on a card-type storage medium, and is provided with positioning markers. Each marker includes position information and direction information, can control an optical head to move along the guide groove, and shift multiplexing/reproducing is performed when recognizing the positioning markers. Since the card-type medium is adopted, a 90-degree rotation can be executed three times, and a total of four times of shift multiplex recording is performed. Random access can be achieved even in a medium that is rotated and used by adopting the positioning method and device described in the present invention.

Abstract: A self-timed sensing architecture for reading a selected cell in an array of non-volatile cells is disclosed. The sensing circuitry generates a signal when a stable sensing value has been obtained from the selected cell, where the stable sensing value indicates the value stored in the selected cell. The signal indicates the end of the sensing operation, causing the stable sensing value to be output as the result of the read operation.

Abstract: A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.

Abstract: A memory device includes a semiconductor substrate, first and second regions in the substrate having a conductivity type different than that of the substrate, with a channel region in the substrate extending between the first and second regions. The channel region is continuous between the first and second regions. A first floating gate is disposed over and insulated from a first portion of the channel region. A second floating gate is disposed over and insulated from a second portion of the channel region. A first coupling gate is disposed over and insulated from the first floating gate. A second coupling gate is disposed over and insulated from the second floating gate. A word line gate is disposed over and insulated from a third portion of the channel region between the first and second channel region portions. An erase gate is disposed over and insulated from the word line gate.

Abstract: A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate.

Abstract: A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins.

Abstract: A memory cell array with memory cells arranged in rows and columns, first sub source lines each connecting together the source regions in one of the rows and in a first plurality of the columns, second sub source lines each connecting together the source regions in one of the rows and in a second plurality of the columns, a first and second erase gate lines each connecting together all of the erase gates in the first and second plurality of the columns respectively, first select transistors each connected between one of first sub source lines and one of a plurality of source lines, second select transistors each connected between one of second sub source lines and one of the source lines, first select transistor line connected to gates of the first select transistors, and a second select transistor line connected to gates of the second select transistors.

Abstract: The present invention provides an electrode active composition represented by formula (I). Li1+xMnaNibO2+x.LiyCoyO2y.D*C (I), wherein x>0, 0<y<0.1, a+b=1, 1.2?a/b?3.0; and D and C are optional dopants and coating agents that contain no cobalt element. The active compositions of Formula (I) exhibit electrochemical properties comparable to those with a higher cobalt amount, such as NCM523 electrode material (LiNi0.5Co0.2Mn0.3O2).

Abstract: An artificial neural network device that utilizes one or more non-volatile memory arrays as the synapses. The synapses are configured to receive inputs and to generate therefrom outputs. Neurons are configured to receive the outputs. The synapses include a plurality of memory cells, wherein each of the memory cells includes spaced apart source and drain regions formed in a semiconductor substrate with a channel region extending there between, a floating gate disposed over and insulated from a first portion of the channel region and a non-floating gate disposed over and insulated from a second portion of the channel region. Each of the plurality of memory cells is configured to store a weight value corresponding to a number of electrons on the floating gate. The plurality of memory cells are configured to multiply the inputs by the stored weight values to generate the outputs.

Abstract: A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.

Abstract: The present invention relates to a holographic storage device and method for simultaneously recording and reading on two sides, and pertains to the technical field of optical holographic storage. The device and method disclosed in the present invention use a characteristic that orthogonal light would not interfere with each other and a Bragg selectivity characteristic for holographic storage, and use two optical heads to constitute two interference fields orthogonal in polarization directions on two sides of a same position of a holographic storage medium, so as to perform two-path simultaneous recording and reading on a hologram. The device and method provided in the present invention implement two-path parallel recording and reading of holographic storage, and combine shift multiplexing and circumferential rotation multiplexing, thereby improving the speed of an information data recording and reading process while increasing a capacity of the holographic storage.

Abstract: The present invention relates to a holographic data storage device with a single-arm structure, and belongs to the technical field of optical holographic storage. According to the device disclosed in the present invention, a part of a reference arm and a part of a signal arm are integrated together to form a single-arm structure, which can not only reduce the number of optical and mechanical elements, but also reduce the system volume and cost without degrading performance. In addition, a signal beam and a reference beam share the same relay lens, so that the impact of environmental interference on the two beams is equal, and the stability of the entire system is improved.

Abstract: A neural network device with synapses having memory cells each having a floating gate and a first gate over first and second portions of a channel region disposed between source and drain regions, and a second gate over the floating gate or the source region. First lines each electrically connect the first gates in one of the memory cell rows, second lines each electrically connect the second gates in one of the memory cell rows, third lines each electrically connect the source regions in one of the memory cell columns, and fourth lines each electrically connect the drain regions in one of the memory cell columns. The synapses receive a first plurality of inputs as electrical voltages on the first or second lines, and provide a first plurality of outputs as electrical currents on the third or fourth lines.

Abstract: A neural network device with synapses having memory cells each having source and drain regions in a semiconductor substrate with a channel region extending there between, a floating gate over an entirety of the channel region, and a first gate over the floating gate. First lines each electrically connect together the first gates in one of the memory cell rows, second lines each electrically connect together the source regions in one of the memory cell rows, and third lines each electrically connect together the drain regions in one of the memory cell columns. The synapses are configured to receive a first plurality of inputs as electrical voltages on the first lines or on the second lines, and to provide a first plurality of outputs as electrical currents on the third lines.

Abstract: Systems and methods are disclosed for processing data. In one exemplary implementation, there is provided a method of generating H output data from W data input streams produced from input data. Moreover, the method may include generating the H discrete output data components via application of the W data inputs to one or more transforming components or processes having specified mathematic operations and/or a generator matrix functionality, wherein the W data inputs are recoverable via a recovery process capable of reproducing the W data inputs from a subset (any W members) of the H output data streams. Further exemplary implementations may comprise a transformation process that includes producing an H-sized intermediary for each of the W inputs, combining the H-sized intermediaries into an H-sized result, and processing the H-sized result into the H output data structures, groups or streams.

Abstract: A lithium slurry battery system is provided. The system includes a lithium slurry battery and a maintenance and regeneration equipment for the battery. The battery includes: a case, a cell core accommodated in the case, and a cover butting device. The case is provided with a cover and a case body. The cover butting device is arranged on the cover and is provided with a first cover port and a second cover port. The maintenance and regeneration equipment includes: a gas storage tank for storing gas, a liquid storage tank for storing liquid; a gas recovery storage tank for storing gas recovered from the lithium slurry battery; a liquid recovery storage tank for storing liquid recovered from the lithium slurry battery; and an equipment butting device provided with a first equipment port and a second equipment port.

Abstract: A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.

Abstract: A method of forming a semiconductor device where memory cells and some logic devices are formed on bulk silicon while other logic devices are formed on a thin silicon layer over insulation over the bulk silicon of the same substrate. The memory cell stacks, select gate poly, and source regions for the memory devices are formed in the memory area before the logic devices are formed in the logic areas. The various oxide, nitride and poly layers used to form the gate stacks in the memory area are formed in the logic areas as well. Only after the memory cell stacks and select gate poly are formed, and the memory area protected by one or more protective layers, are the oxide, nitride and poly layers used to form the memory cell stacks removed from the logic areas, and the logic devices are then formed.