Abstract: Aspects of the innovations herein are consistent with a storage system for storing variable sized objects. According to certain implementations, the storage system may be a transaction-based system that uses variable sized objects to store data, and/or may be implemented using data stores, such as arrays disks arranged in ranks. In some exemplary implementations, each rank may include multiple stripes, each stripe may be read and written as a convenient unit for maximum performance, and/or a rank manager may be provided to dynamically configure the ranks. In certain implementations, the storage system may include a stripe space table that contains entries describing the amount of space used in each stripe. Further, an object map may provide entries for each object in the storage system describing the location, the length and/or version of the object.

Abstract: An explosion-proof sheet, a top cover assembly of a secondary battery, and a secondary battery are provided. The explosion-proof sheet has a pressure release portion arranged oppositely to the explosion-proof hole, a fixing portion surrounding the pressure release portion and connected to the top cover, a connecting portion located between the pressure release portion and the fixing portion for connecting the pressure release portion to the fixing portion. A thickness of a part of the connecting portion is greater than a thickness of the remaining part of the connecting portion.

Abstract: An explosion-proof sheet of a secondary battery and a secondary battery are provided. The explosion-proof sheet has a main body portion, a fixing portion, and a cracking portion. The main body portion is opposite to the explosion-proof hole. A strengthening region is formed on the main body portion. The fixing portion is disposed around the main body portion, and the fixing portion is connected to a periphery of the explosion-proof hole. The cracking portion is located between the fixing portion and the main body portion and connected to the fixing portion and the main body portion.

Abstract: An electrode assembly is provided in the disclosure. The electrode assembly includes a positive electrode and a negative electrode. The positive electrode includes a first insulating layer, a first conductive layer on one surface of the first insulating layer and a second conductive layer on the other surface of the first insulating layer, a first active material layer on a surface of the first conductive layer, and a second active material layer on a surface of the second conductive layer. The negative electrode includes a second insulating layer, a third conductive layer on one surface of the second insulating layer and a fourth conductive layer on the other surface of the second insulating layer, a third active material layer on a surface of the third conductive layer, and a fourth active material layer on a surface of the fourth conductive layer.

Abstract: An electrode sheet and an electrode sheet assembly are provided. The electrode sheet includes a current collector, a first active material layer, and a second active material layer. The current collector has a first surface and a second surface opposite to the first surface. The first active material layer covers at least a part of the first surface. The second active material layer covers at least a part of the second surface. The first active material layer is different from the second active material layer. The first active material layer and the second active material layer have different particle size distributions.

Abstract: A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate.

Abstract: A battery having a housing, a core assembly, a separator and a top cover assembly is provided. The housing defines an accommodating cavity for receiving the core assembly. The core assembly has a jelly-roll having a body portion, and an insulating sheet. The body portion has a top end surface and a bottom end surface located at the ends of the body portion respectively, and a peripheral surface connected to the top the bottom end surfaces. The insulating sheet covers the peripheral surface and/or the bottom end surface. The separator is in the housing and separates the bottom end surface of the jelly-roll from a bottom surface of the housing. The top cover assembly is connected to the housing in a sealed manner and configured to close the opening of the housing. The top cover assembly is spaced from the insulating sheet.

Abstract: A top cover assembly for a battery, a battery, and an energy storage device are provided in the disclosure. The top cover assembly for a battery includes a pole and a pressing block. The pressing block defines a limiting hole. The pole extends through and is at least partially located in the limiting hole. The limiting hole has a first hole section and a second hole section axially connected with the first hole section. The first hole section has a radial size larger than the second hole section. In the top cover assembly for a battery according to implementations of the disclosure, the first hole section and the second hole section connected in the axial direction can make an inner circumferential wall of the limiting hole stepped.

Abstract: A top cover assembly for a battery, a battery, and an energy storage device are provided in the disclosure. The top cover assembly includes an insulating cover plate, a top cover plate, an insulating member, and a current collector stacked in sequence. A surface of the first flange close to the insulating member, an inner circumferential wall of the mounting hole, and a surface of the top cover plate close to the first flange and extending beyond the inner circumferential wall of the mounting hole define a sealing cavity. An inner circumferential wall of the through hole and an outer circumferential wall of the main body define a gap therebetween, the gap communicates with the sealing cavity, and a sealing member is received in the sealing cavity.

Abstract: A top cover assembly for a battery, a battery, and an energy storage device are provided in the disclosure. The top cover assembly includes a pole and a current collector having multiple folding sections. The multiple folding sections include at least a first folding section and a second folding section. The first folding section is spaced apart from the second folding section in a length direction of the current collector. The current collector is divided by the first folding section and the second folding section into a first part, a second part, and a third part. The first part is bent toward one side of the second part and connected with the pole. The third part is bent toward the other side of the second part and connected with a wound core of the battery.

Abstract: An explosion-proof valve applicable to a battery, the battery, and an energy storage device are provided in the present disclosure. The energy storage device includes the battery. The battery includes the explosion-proof valve, a housing, a winding core, and a top cover assembly. The explosion-proof valve applicable to the battery includes a body, a first notch groove, and at least one second notch groove. The first notch groove is defined on a side surface of the body. The at least one second notch groove is defined on a groove wall of the first notch groove. The winding core is located in the housing. The top cover assembly seals the housing, where the explosion-proof valve is installed in the top cover assembly, and the first notch groove is defined at a side of the top cover assembly close to the winding core.

Abstract: A method of forming a device on a substrate with recessed first/third areas relative to a second area by forming a fin in the second area, forming first source/drain regions (with first channel region therebetween) by first/second implantations, forming second source/drain regions in the third area (defining second channel region therebetween) by the second implantation, forming third source/drain regions in the fin (defining third channel region therebetween) by third implantation, forming a floating gate over a first portion of the first channel region by first polysilicon deposition, forming a control gate over the floating gate by second polysilicon deposition, forming an erase gate over the first source region and a device gate over the second channel region by third polysilicon deposition, and forming a word line gate over a second portion of the first channel region and a logic gate over the third channel region by metal deposition.

Abstract: A heating sheet and a battery module are provided. The battery module includes multiple battery cells and a heating sheet. The heating sheet includes multiple heating units and multiple connection units, and two adjacent heating units are coupled with each other through a connection unit. One heating unit may be attached to a side wall of one battery cell, and the connection unit corresponds to the gap region.

Abstract: A fixing assembly for a battery module and a battery pack are provided. The fixing assembly for the battery module includes an end plate, a fixing member, and a first band. The end plate is provided with a limiting member protruding from a surface of the end plate. The fixing member is configured to connect multiple battery modules and abut against the surface of the end plate provided with the limiting member, such that the fixing member, the limiting member, and the end plate can cooperatively define a positioning region. The first band is configured to abut against the surface of the end plate provided with the limiting member to bind the battery module. The first band abuts against the positioning region, such that the fixing member and the limiting member can cooperatively abut against the first band.

Abstract: A battery box and a battery pack are provided. The battery box includes a box body, a cooling plate, and a stiffener. The cooling plate is connected with an outside of a wall plate of the box body, and the stiffener is connected with the box body and abuts against a side of the cooling plate away from the wall plate. The cooling plate is connected with the box body, the stiffener is connected with the box body, and the stiffener abuts against the side of the cooling plate away from the wall plate.

Abstract: A wound battery which relates to the field of batteries. The wound battery is formed by winding a battery sheet. The battery sheet is flexible and includes a flexible current collector, a positive active layer, a negative active layer, and an insulating separator which is formed on a surface of the positive active layer and/or a surface of the negative active layer, and is configured to prevent the positive active layer from directly contacting the negative active layer.

Abstract: A method of forming a memory cell includes forming a first polysilicon block over an upper surface of a semiconductor substrate and having top surface and a side surface meeting at a sharp edge, forming an oxide layer with a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge, performing an etch that thins the oxide layer in a non-uniform manner such that the third portion is thinner than the first and second portions, performing an oxide deposition that thickens the first, second and third portions of the oxide layer, wherein after the oxide deposition, the third portion is thinner than the first and second portions, and forming a second polysilicon block having one portion directly on the first portion of the oxide layer and another portion directly on the third portion of the oxide layer.

Abstract: A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Abstract: A method of forming a memory device that includes forming a first polysilicon layer using a first polysilicon deposition over a semiconductor substrate, forming an insulation spacer on the first polysilicon layer, and removing some of the first polysilicon layer to leave a first polysilicon block under the insulation spacer. A source region is formed in the substrate adjacent a first side surface of the first polysilicon block. A second polysilicon layer is formed using a second polysilicon deposition. The second polysilicon layer is partially removed to leave a second polysilicon block over the substrate and adjacent to a second side surface of the first polysilicon block. A third polysilicon layer is formed using a third polysilicon deposition. The third polysilicon layer is partially removed to leave a third polysilicon block over the source region. A drain region is formed in the substrate adjacent to the second polysilicon block.

Abstract: A memory device with memory cell pairs each having a single continuous channel region, first and second floating gates over first and second portions of the channel region, an erase gate over a third portion of the channel region between the first and second channel region portions, and first and second control gates over the first and second floating gates. For each of the pairs of memory cells, the first region is electrically connected to the second region of an adjacent pair of memory cells in the same active region, and the second region is electrically connected to the first region of an adjacent pair of the memory cells in the same active region.