Abstract: A flexible membrane assembly for a wafer carrier in a CMP system. The flexible membrane assemble has a flat, flexible membrane joined to a rigid cylindrical sidewall.

Abstract: An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission.

Abstract: A robot calibration system and method for robots in semiconductor wafer processing systems is disclosed. The calibration system comprises a calibration array, a dummy wafer and a control system programmed with a calibration routine. The calibration array has an plurality of inductive proximity sensors to determine parallelism of the robot relative to a station and a center locating sensor to determine the center of the station.

Abstract: A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.

Abstract: A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements are disposed between the wafer carrier pressure plate and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-à-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates, etc.

Abstract: The present embodiments provide methods, systems and apparatuses for use in grinding work pieces, such as wafers. Some embodiments provide methods that position a grind spindle to contact a first grinding spindle to a face of a work piece, remove a portion of the face, and control the removing of the portion of the face according to a control algorithm. This control algorithm can comprise determining a force applied to the work piece during the removing of the portion of the face, adjusting a feed rate of the first grind spindle when the force applied to the work piece has a predefined relationship with a first threshold level; and dressing a portion of the first grinding portion when the force applied to the work piece has a predefined relationship with a second threshold level that is greater than the first threshold.

Abstract: The present embodiment provides for methods and systems for use in processing objects such as wafers, including polishing and/or grinding wafers. Some embodiments provide systems that include a front-end module and a processing module. The front end module couples with a storage device that stores objects for processing. The front-end module can comprise a single robot, a transfer station, and a plurality of end effectors. The processing module is coupled with the front-end module such that the single robot delivers objects from the storage device to the processing module. The processing module comprising a rotating table, and a spindle with a carrier configured to retrieve the delivered object and process the object on the rotating table.

Abstract: The present embodiment provides for methods and systems for use in processing objects such as wafers, including polishing and/or grinding wafers. Some embodiments provide systems that include a front-end module and a processing module. The front end module couples with a storage device that stores objects for processing. The front-end module can comprise a single robot, a transfer station, and a plurality of end effectors. The processing module is coupled with the front-end module such that the single robot delivers objects from the storage device to the processing module. The processing module comprising a rotating table, and a spindle with a carrier configured to retrieve the delivered object and process the object on the rotating table.

Abstract: A wafer carrier for controlling downward force and edge effect during chemical mechanical planarization. A retaining ring actuator is disposed within the retaining ring to control the height of the retaining ring relative to the bottom surface of the wafer carrier. An inflatable membrane is disposed across the bottom surface of the wafer carrier such that pressure in the bladder is independently regulated to control the downward force acting on the wafer during CMP. In addition, an edge control bladder may also be disposed within the carrier such that if the pressure in the bladder is also regulated, the amount of force on the edge of the wafer changes. By regulating retaining ring actuator pressure, inflatable membrane pressure, and edge control bladder pressure, non-uniformities in the wafer surface and edge effect may be addressed during CMP.

Abstract: A method of measuring a change in thickness of a layer of material disposed on a wafer while polishing the layer. Light is directed at the surface of the wafer from an optical sensor disposed within the polishing pad. The intensity of the reflected light is measured by a light detector also disposed in the polishing pad. The intensity of the reflected light varies sinusoidally with the change in layer thickness as the layer is removed. By measuring the absolute thickness of the layer at two or more points along the sinusoidal curve, the sinusoidal curve is calibrated so that a portion of the wavelength of the curve corresponds to a change in thickness of the layer.

Abstract: The present embodiments provide methods, systems and apparatuses for use in grinding work pieces, such as wafers. Some embodiments provide methods that position a grind spindle to contact a first grinding spindle to a face of a work piece, remove a portion of the face, and control the removing of the portion of the face according to a control algorithm. This control algorithm can comprise determining a force applied to the work piece during the removing of the portion of the face, adjusting a feed rate of the first grind spindle when the force applied to the work piece has a predefined relationship with a first threshold level; and dressing a portion of the first grinding portion when the force applied to the work piece has a predefined relationship with a second threshold level that is greater than the first threshold.

Abstract: An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission.

Abstract: A method of relieving surface stress on a thin wafer by removing a small portion of the wafer substrate, the substrate being removed by applying a warm solution of KOH to the backside of the wafer while the wafer spins. The wafer may be supported on a rotatable platform adapted to direct the flow of chilled, deionized water underneath the device side of the wafer. The chilled water supports the wafer and protects the devices built-up on the wafer from the corrosive effects of KOH and from thermal damage.

Abstract: A pivoting wafer carrier having a minimum of internal friction and a smooth, continuous pivoting motion. The pivot mechanism includes a lower ring mounted on a pressure plate, an upper ring mounted on a housing upper plate and ball transfer units disposed on the lower ring. Corresponding bearing wedges depend downwardly from the upper ring. As the pressure plate tilts during the polishing process, the load balls of the ball transfer units roll against the corresponding wedges, thus producing a smooth, continuous pivoting motion. A universal joint may be provided to the carrier to effect the rotation of the carrier and to aid the smooth, continuous pivoting motion of the wafer carrier.

Abstract: A wafer carrier for controlling downward force and edge effect during chemical mechanical planarization. A retaining ring actuator is disposed within the retaining ring to control the height of the retaining ring relative to the bottom surface of the wafer carrier. An inflatable membrane is disposed across the bottom surface of the wafer carrier such that pressure in the bladder is independently regulated to control the downward force acting on the wafer during CMP. In addition, an edge control bladder may also be disposed within the carrier such that if the pressure in the bladder is also regulated, the amount of force on the edge of the wafer changes. By regulating retaining ring actuator pressure, inflatable membrane pressure, and edge control bladder pressure, non-uniformities in the wafer surface and edge effect may be addressed during CMP.

Abstract: A grinding assembly for shaping work pieces that includes one or more grind spindles. Each of the grind spindles include two independent grinding wheels driven by a single spindle drive. The grind spindles translate horizontally to perform both edge and face grinding with a single grind spindle. A non-contact position sensor in a work spindle measures work spindle displacement during grinding and provides feedback to the grind spindle to regulate the force imparted on the work piece by the grind spindle. In variations, an abrasive wheel disposed radially with respect to an axis of spindle rotation is utilized to perform edge grinding of the work piece. In other variations cleaning, polishing and grinding are carried out in a single grinding assembly. In yet other variations, a wheel dressing apparatus is utilized to dress the wheel when one or more forces to maintain productivity of the grind wheel exceed a threhold.

Abstract: An optical sensor that includes a light source and a detector is located within a cavity in a polishing pad so as to face the surface that is being polished. Light from the light source is reflected from the surface being polished and the detector detects the reflected light. The electrical signal produced by the detector is conducted to a hub located at the central aperture of the polishing pad. The disposable polishing pad is removably connected, both mechanically and electrically to the hub. The hub contains electronic circuitry that is concerned with supplying power to the optical sensor and with transmitting the electrical signal to a non-rotating station. Several techniques are described for accomplishing these tasks. The system permits continuous monitoring of an optical characteristic of a surface that is being polished, even while the polishing machine is in operation, and permits the end point of the polishing process to be determined.

Abstract: A long-lasting retaining ring for wafer carriers used in chemical mechanical planarization. A groove is disposed around the retaining ring, with the groove opening facing the mounting plate. A ridge is disposed in the groove. A bladder is disposed in the groove and is pressed between the ridge and the mounting plate. Pressure in the bladder can be maintained or adjusted to deform the bladder and thereby force the retaining ring onto the polishing pad as the retaining ring is worn. Prior to adding pressure to the bladder, the ridge forces the bladder to very closely conform to the dimensions of the groove. Thus, during use, bladder deformation is not wasted on conforming the bladder to the groove shape, but instead can be used to force the retaining ring further in the direction of the pad. The ridge thereby increases the distance the retaining ring can move towards the pad.

Abstract: A wafer carrier for controlling the edge effect during chemical mechanical planarization. A first bladder is disposed within the retaining ring to control the height of the retaining ring relative to the bottom surface of the wafer carrier. A second bladder is disposed within the carrier such that if the pressure in the bladder is regulated, the amount of force on the edge of the wafer changes. If a polishing process would cause material near the edge of the wafer to be removed at a higher rate than from the rest of the wafer, then the pressure is regulated within the bladder to reduce the force against the edge of the wafer. By reducing the force against the edge of the wafer, material is removed from the front side of the wafer at a uniform rate.

Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, rinsed on the backside, removed from the tape and then cleaned on the front side and backside. A tool for applying tape to a chuck, as described herein, facilitates this method.