Abstract: A method of backgrinding wafers wherein backgrinding tape or a pad is applied to the chuck and not to the wafers. The backgrinding tape or pad is left on the chuck as each wafer is sequentially placed on the tape or pad, background, and then removed from the tape. A tool for applying tape to a chuck, as described herein, facilitates this method.

Abstract: An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission.

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on a target surface of the object to be polished. A pad drive member is connected to the pad to move the pad relative to the object to change a position of the polishing surface of the pad on the target surface of the object. The pad comprises a backing material having a modulus of elasticity of at least about 300,000 psi. In specific embodiments, the pad includes grooves on the polishing surface. The pad has a thickness between about 0.05 and about 0.1 inch. The pad back material comprises a ceramic material. A compliant layer may be disposed between the pad and the pad drive member. The compliant layer comprises an elastomeric material.

Abstract: Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a platen assembly for holding an object having a target surface to be planarized. A polishing pad is configured to contact the object during planarization with a contact portion over a contact area which is smaller in area than the target surface. The polishing pad has a noncontact portion which is not in contact with the object during planarization. The polishing pad is movable relative to the object to move the noncontact portion in contact with the object and move the contact portion out of contact with the object. A conditioner is configured to condition the noncontact portion of the polishing pad. The noncontact portion of the polishing pad may be conditioned continuously during planarization of the object by the polishing pad. An abrasive may be delivered to the contact area between the polishing pad and the target surface of the object.

Abstract: A system provides a polishing pad to a polishing head for chemical mechanical planarization of an object which is larger in diameter than the polishing pad. The system comprises a polishing head and a plurality of magazines disposed in a first region. Each magazine houses at least one removable puck for holding a polishing pad. At least one of the magazines is configured to feed the pucks from a bottom thereof to be retrieved by the transfer apparatus. The puck is configured be removably coupled to a coupling on the polishing head and to be disposed between the polishing pad and the polishing head. A transfer apparatus is provided for transferring the pucks from the magazines in the first region to a pickup stand in a second region. The polishing head is movable to the second region to pick up the pucks from the pickup stand.

Abstract: Specific embodiments of the present invention are directed to a chemical mechanical planarization apparatus which comprises a platen assembly for holding an object to be planarized, and a polishing pad having a surface size at least as large as a surface size of the object, the polishing pad being movable relative to the object. A table has a surface supporting the polishing pad and including a plurality of grooves forming a patterned surface. In some embodiments, the grooves form a repeated pattern on the surface of the table. The pattern may include a plurality of platelets having the same shape and size. The platelets may be hexagonal and vertically compliant. The surface of the table is harder than the polishing pad.

Abstract: Specific embodiments of the present invention are directed to a method of forming a polishing pad having a smaller diameter than an object to be planarized and to be used for planarizing the object by chemical-mechanical planarization. The method comprises placing a polishing surface of the polishing pad in contact with an abrasive surface of a conditioning object having a shape identical to the object to be planarized. The polishing surface of the polishing pad is engaged with the abrasive surface of the conditioning object under conditions substantially equal to the conditions to be applied for planarizing the object. The polishing surface is observed, and is disengaged from the abrasive surface of the conditioning object when abrasion of a center region of the polishing surface of the polishing pad by the abrasive surface of the conditioning object is initially detected.

Abstract: Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a shaft having a shaft axis and being connected with a polishing head which is coupled to a polishing pad. The polishing pad has a smaller diameter than the object to be planarized. The shaft is rotatable to spin the polishing head and polishing pad around the shaft axis. An orbit housing has, spaced from an orbital axis, an eccentric hole through which the shaft is rotatably disposed. The orbit housing is rotatable to orbit the shaft, the polishing head, and the polishing pad around the orbital axis. In some embodiments, the object is rotated at an object rotational speed and the polishing pad is rotated around the orbital axis at an orbiting speed. A ratio of the greater of the object rotational speed and the orbiting speed to the lesser of the object rotational speed and the orbiting speed is a non-integer.

Abstract: Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a shaft having a shaft axis and being connected with a polishing head which is coupled to a polishing pad. The polishing pad has a smaller diameter than the object to be planarized. The shaft is rotatable to spin the polishing head and polishing pad around the shaft axis. A channel extends along the shaft axis through the shaft and the polishing head. A supply tube is configured to deliver a polishing chemical through the channel to the polishing pad. In some embodiments, the polishing pad is an annular pad having an opening for flowing the polishing chemical therethrough to a region between the polishing pad and the object. A sensor is provided for monitoring a level of the polishing chemical in the channel of the shaft. A pump is provided for pumping the polishing chemical through the supply tube to the channel of the shaft.

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on a target surface of the object to be polished. A pad drive member is connected to the pad to move the pad relative to the object to change a position of the polishing surface of the pad on the target surface of the object. A drive support is movably coupled with the pad drive member to support the pad drive member for rotation relative to the drive support around a pivot point which is disposed substantially on the target surface of the object during polishing.

Abstract: A method of polishing semiconductor wafers. The method includes spacing the polishing pad from the center of the wafer by a selected offset distance (406) and translating the polishing pad in a manner wherein the translation speed varies as the pad is moved across the surface of the wafer (414). A method (FIGS. 7 and 9) for calibrating a polishing apparatus includes iteratively selecting an offset distance, performing a polish, inspecting the resulting removal profile, and repeating until a desired characteristic (FIG. 6C) in the removal profile is attained.

Abstract: An optical sensor that includes a light source and a detector is located within a cavity in a polishing pad so as to face the surface that is being polished. Light from the light source is reflected from the surface being polished and the reflected light is detected by the detector. The electrical signal produced by the detector is conducted to a hub located at the central aperture of the polishing pad. The disposable polishing pad is removably connected, both mechanically and electrically to the hub. The hub contains electronic circuitry that is concerned with supplying power to the optical sensor and with transmitting the electrical signal to a non-rotating station. Several techniques are described for accomplishing these tasks. The system permits continuous monitoring of an optical characteristic of a surface that is being polished, even while the polishing machine is in operation, and permits the end point of the polishing process to be determined.

Abstract: In a chemical-mechanical planarization apparatus, a pad spindle includes a pad chuck operative for selective attachment and detachment of a polishing pad. The pad chuck includes a plurality of pivoting links which cooperate to provide a clamping action to retain the polishing pad. A detachment station engages the pivoting links to detach the polishing pad.

Abstract: A system provides a polishing pad for chemical mechanical planarization of an object larger in diameter than the polishing pad. The system comprises a magazine including a bottom for exposing at least a portion of a puck which holds a polishing pad, and a transfer apparatus for transferring the puck from the magazine in the first region to a pickup stand in a second region. The transfer apparatus includes a puck support being movable to retrieve the puck from the bottom of the magazine by coupling a capture portion of the puck support with an exposed portion of the puck and moving the puck with the puck support away from the magazine.

Abstract: An apparatus for chemical mechanical planarization (100). The apparatus has a platen assembly for holding an object (e.g., wafer, disk, flat panel, glass) to be planarized. The apparatus (100) also has a polishing head coupled to a polishing pad, which has a smaller diameter than the object. The polishing head is movable (e.g., pivotable, rotatable, translational) from a first region overlying the platen assembly to a second region, which is outside the first region. A removable substrate is coupled between the polishing pad and the polishing head. The removable substrate is removably coupled to a coupling on the polishing head. The apparatus also has a first magazine (511) disposed in the second region, where the first magazine houses at least one substrate comprises a first polishing pad to be placed on the coupling on the polishing head. A second magazine (513) housing at least one substrate comprising a second polishing pad may be provided in the second region.

Abstract: In a type of end effector used for handling wafers in the semiconductor industry, the wafer is acquired by lowering the end effector until it almost touches the upper side of the wafer and then applying suction to lift the water into contact with a wafer contacting surface on the underside of the end effector. Release of the wafer is accomplished by relieving the suction or replacing it with a small overpressure. Wet thin wafers do not reliably release; the liquid spreads into a thin film between the upper side of the wafer and the wafer contacting surface, and the surface tension of this film causes the thin wet wafer to adhere to the wafer contacting surface. This problem is solved by affixing a sheet of a porous resilient material, such as open cell MYLAR®, to the wafer contacting surface.

Abstract: A chemical-mechanical polishing apparatus (100, 200) comprising a polishing pad assembly. The polishing pad assembly (300) comprises a removable cap (318) to be rotatably coupled to a drive device of a chemical mechanical polishing apparatus and a polishing pad comprising a fixed abrasive disposed on the removable cap. The removable cap (318) and the polishing pad being a detached unit to be attached to or removed from the drive device.

Abstract: A CMP slurry pumping system which uses the slurry pump inlet pressure as input to the pump controller, and adjusts pump speed to account for variations in inlet pressure.

Abstract: An optical endpoint system for a CMP system with a viewport located off-center on the platen, said view port being adjustable in height so that the window of the viewport can be made flush with the top of the polishing pad.

Abstract: A load station is used in a planarizing machine to perform several useful functions related to handling of a wafer. By centering the wafer with respect to a spindle carrier the load station interrupts the accumulation of positional errors. The load station never makes solid contact with the wafer, but instead the wafer is continually levitated on three cushions of water that are directed upwardly against the lower face of the wafer. The presence of the wafer partially impedes the flow of water from the nozzles used for levitation causing an increase in the water pressure immediately upstream of the nozzles. This increased pressure is sensed and used as an indicator of the presence of a wafer at the load station. The load station further includes a nozzle that directs a stream against the lower side of the wafer so as to elevate the wafer from the load station into the carrier.