Abstract: A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface. The silicon carbide epitaxial layer is provided on the first main surface. The silicon carbide epitaxial layer has one or more blue light-emitting defects. The silicon carbide epitaxial layer has a second main surface. The second main surface is located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. The one or more blue light-emitting defects are exposed at the second main surface.

Abstract: A semiconductor device includes a transistor provided on a main surface of a substrate having the main surface, and including a first electrode including an ohmic electrode, a MIM capacitor formed above the transistor and including a second electrode, a first electrically insulating layer provided on the second electrode, and a third electrode provided on the first electrically insulating layer, a second electrically insulating layer provided between the first electrode and the second electrode, and a plurality of vias penetrating the second electrically insulating layer and electrically connecting the first electrode and the second electrode to each other.

Abstract: A wiring structure includes a MIM capacitor and a helical wiring. The wiring structure includes a substrate having a main surface and a back surface, a plurality of wiring layers sequentially stacked on or above the main surface. The plurality of wiring layers include a first wiring layer being a wiring layer closest to the substrate, a second wiring layer provided on or above the first wiring layer, and a third wiring layer provided on or above the second wiring layer. The MIM capacitor includes a first electrode included in the second wiring layer, a second electrode included in the third wiring layer, and a first electrically insulating layer provided between the first electrode and the second electrode. The helical wiring includes a first wiring included in the first wiring layer, a second wiring included in the second wiring layer, and a third wiring included in the third wiring layer.

Abstract: A semiconductor device includes: a substrate; a first metal film provided above a main surface of the substrate; a first insulating layer provided on the first metal film; a second metal film provided on the first insulating layer; a plurality of first vias penetrating the first insulating layer to connect the first metal film with the second metal film; a second insulating layer provided on the second metal film; a third metal film provided on the second insulating layer and insulated from the second metal film by the second insulating layer; a fourth metal film provided on a back surface of the substrate; and a second via penetrating the substrate to connect the first metal film with the fourth metal film, and provided at a position overlapping the second metal film when viewed from the normal direction of the main surface.

Abstract: This transmission board production method is for producing a plurality of transmission boards from a panel having a copper foil on a surface thereof, the plurality of transmission boards each including a transmission path, the transmission board production method including: a resist formation step of forming a photoresist on the copper foil; an exposure step of irradiating the photoresist with light via a photomask; a resist removal step of removing, of the photoresist, either of a part irradiated with the light and a part not irradiated with the light; and an etching step of performing wet etching at a part, of the copper foil, exposed through the resist removal step, using an etching solution. The photomask includes a pattern for forming the transmission path included in each of the plurality of transmission boards, so that the transmission paths are along each other.

Abstract: A silicon carbide substrate is a silicon carbide substrate having a main surface and doped with vanadium. The main surface is constituted of an outer edge, an outer peripheral region that is a region within 5 mm from the outer edge, and a central region surrounded by the outer peripheral region. When the central region is divided into a plurality of square regions each having each side with a length of 5 mm, an electrical resistivity in each of the plurality of square regions is 1×1011 ?cm or more. An area density of micro-pipes in the central region is 1 cm2 or less.

Abstract: In an on-vehicle shutoff control device, a control unit switches a switch unit to an off state in a case where the switch unit is in the on state and a current value changes from less than a threshold value to the threshold value or more. The control unit switches the switch unit to the on state in at least one of a case where the switch unit has remained in the off state and a potential difference across the switch unit has been continuously maintained less than a reference for a predetermined period of time, a case where a speed of increase of potential difference across the switch unit is less than a reference, and a case where the potential difference across the switch unit is less than a reference at a time when a predetermined period of time passes after switching the switch unit to the off state.

Abstract: An in-vehicle control device disclosed herein is an in-vehicle control device to be mounted in a vehicle and includes a control unit that transmits at least some of vehicle data collected by the vehicle to an external device that is provided outside of the vehicle and communicates with the in-vehicle control device via a network. When an ignition switch of the vehicle is switched off, the control unit executes calculation control for calculating a transmittable amount of the vehicle data based on a remaining battery charge of the vehicle, extraction control for extracting, from the vehicle data, first data that fits within the transmittable amount, and first transmission control for transmitting the first data to the external device and not transmitting second data that is different from the first data out of the vehicle data to the external device.

Abstract: An optical connection structure includes a first connector, a second connector, a positioning member, and an elastic member. The first connector includes a first support provided in the vicinity of a first rear end surface of the first ferrule, and first fixing portions formed integrally with the first support. The second connector includes a second support provided in the vicinity of a second rear end surface of the second ferrule, and second fixing portions formed integrally with the second support. The first fixing portions are attachable and detachable to and from the second fixing portions. The positioning member is held by the first connector.

Abstract: A magnet wire according to an aspect of the present disclosure is a magnet wire comprising a conductor and a plurality of insulating layers covering the conductor, wherein the insulating layers have an innermost layer and an outermost layer, a main component of the innermost layer is a fluororesin, and a ratio E1/E2 of a Young's modulus E1 of the outermost layer to a Young's modulus E2 of the innermost layer is 1.1 or more.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface. A gate trench is provided in the first main surface. The gate trench is defined by side surfaces and a bottom surface. The side surfaces penetrate the source region and the body region to reach the drift region. The bottom surface connects to the side surfaces. The gate trench extends in a first direction parallel to the first main surface. The silicon carbide substrate further includes an electric field relaxation region that is the second conductive type, the electric field relaxation region being provided between the bottom surface and the second main surface and extending in the first direction, and a connection region that is the second conductive type, the connection region electrically connecting a contact region to the electric field relaxation region.

Abstract: Provided is a fuse-equipped connector including: a housing; a fuse terminal configured to be attached to the housing; a holder configured to be attached to the housing; and a fuse configured to be attached to the holder, and be electrically connected to the fuse terminal, wherein the housing includes a lock portion, and the holder includes a lock receiving portion configured to be elastically locked to the lock portion, the holder includes a fuse accommodating portion in which the fuse is to be removably accommodated, the fuse includes a terminal portion, and the fuse terminal includes a fuse elastic contact portion configured to come into elastic contact with the terminal portion of the fuse.

Abstract: A method for manufacturing an optical fiber coats a first resin on a glass fiber drawn from a glass base material, and cures the first resin to form a first coating. The method includes causing the glass fiber to travel at a first velocity during a first time period, increasing the velocity from the first velocity to a second velocity during a second time period following the first time period, and maintaining the velocity at the second velocity during a third time period following the second time period. A relationship 1.0<TB2/TB1<=11.0 stands, where TB1 denotes a thickness of the first coating in the increasing, from a start of coating the first resin to a time when the velocity reaches a third velocity higher than the first velocity and lower than the second velocity, and TB2 denotes a thickness of the first coating in the maintaining.

Abstract: A charging assistance system includes a processor configured to execute a generation process of generating charging plan data for a vehicle on the basis of: predicted power consumption of the vehicle calculated on the basis of a future traveling schedule of the vehicle; and a charging condition at each predicted stop place based on the traveling schedule.

Abstract: A power source system includes a plurality of output circuits electrically connected to a plurality of second coils on a second side of a transformer unit, and a selection circuit to which power is supplied from the plurality of output circuits. Each of the plurality of output circuits is electrically connected to each of the plurality of second coils on the second side, and outputs DC power to the selection circuit based on AC power of the second coil on the second side. The selection circuit selects a supply destination of the power from a first conductive path and a second conductive path.

Abstract: A porous membrane laminate according to one aspect of the present disclosure has one or more porous membranes containing polytetrafluoroethylene as a main component, wherein the porous membrane laminate satisfies a following formula (1): P / ? > - 31.6 × ln ? Ra + 168 ( 1 ) wherein P is an average bubble point [kPa]; ? is a surface tension [dyn/cm] of a test liquid used in measurement of the average bubble point; and Ra is a surface roughness [nm] of the porous membrane, and 14 nm?Ra?96 nm.

Abstract: An optical connector ferrule makes it possible for tip portions of a plurality of optical fibers to be inserted straight into a plurality of through-holes that are in a one-to-one correspondence therewith without being twisted and rotated. This optical connector ferrule is mounted to the tip portion of the optical fiber, and includes a front end surface, a rear opening, and a plurality of through-holes. Each through-hole includes a fiber hole and a fiber introduction hole. At least one flat surface among a plurality of surfaces that define an interior space of the optical connector ferrule supports the optical fiber such that the central axis of the corresponding optical fiber matches the central axis of the fiber hole.

Abstract: A silicon carbide epitaxial substrate has: a silicon carbide substrate; and a silicon carbide layer located on the silicon carbide substrate. The silicon carbide layer includes a first region, and a second region surrounded by the first region when viewed in a plan view. The second region has a third region expanded in a <11-20> direction. The first region is composed of silicon carbide having a polytype of 4H. The third region is composed of silicon carbide having a polytype of 3C. When a surface of the first region is defined as a first surface and a surface of the third region is defined as a second surface, at least a portion of the second surface protrudes with respect to the first surface in a direction from the silicon carbide substrate toward the silicon carbide layer.

Abstract: A management device to be used in an in-vehicle network including a plurality of function units installed in a vehicle includes: a state information acquisition unit configured to acquire state information indicating a state of the vehicle; and an allocation unit configured to change allocation of transmission bands of a plurality of logical paths between the function units in accordance with the state of the vehicle indicated by the state information acquired by the state information acquisition unit.

Abstract: A bus bar 20 is a plate-shaped bus bar 20 that connects a plurality of power storage elements 11, and includes a plurality of connection portions 21 connected to electrode terminals 12A and 12B of the plurality of power storage elements, and one or more intermediate portion 22 that couples the adjacent connection portions 21, the connection portions 21 include electrode welding portion 23 disposed so as to respectively oppose the electrode terminals 12A and 12B and welded to the electrode terminals 12A and 12B, the intermediate portion 22 is provided with one or more slit 24, and the slit 24 has a shape elongated in an arrangement direction in which the connection portions 21 are arranged side by side and has a predetermined dimension in a width direction orthogonal to both the arrangement direction and an opposing direction in which the electrode welding portions 23 opposes the electrode terminals 12A and 12B.