Abstract: A semiconductor optical device includes a first n-type III-V group compound semiconductor layer, an active layer, a tunnel junction structure including a p-type III-V group compound semiconductor layer and a second n-type III-V group compound semiconductor layer, and a third n-type III-V group compound semiconductor layer. The first n-type III-V group compound semiconductor layer, the active layer, the p-type III-V group compound semiconductor layer, the second n-type III-V group compound semiconductor layer, and the third n-type III-V group compound semiconductor layer are stacked in this order. The second n-type III-V group compound semiconductor layer has an n-type dopant concentration higher than an n-type dopant concentration of the third n-type III-V group compound semiconductor layer. The p-type III-V group compound semiconductor layer has a strain.

Abstract: A porous membrane according to the present disclosure includes polytetrafluoroethylene as a main component, wherein a melting curve obtained in a first run of differential scanning calorimetry at a rate of temperature increase of 10° C./min has an endothermic peak in a range of 300° C. to 360° C., and a difference between an onset temperature and an endset temperature of the endothermic peak is 20° C. or less.

Abstract: An electrical connection system includes a plug and a receptacle. The plug includes a plurality of first conductors and a plug housing including an inclined first end surface. The receptacle includes a plurality of second conductors and a receptacle housing including an inclined second end surface. The plug and the receptacle are configured to be coupled with each other, such that a first direction in which the first conductor extends intersects with a second direction in which the second conductor extends as a first connection mode. When the plug is coupled to the receptacle in the first connection mode, the first end surface faces the second end surface and each distal end portion of the plurality of the first conductors is electrically connected to the distal end portion of a corresponding second conductor among the plurality of the second conductors.

Abstract: A flexible printed wiring board according to an aspect of the present disclosure is a flexible printed wiring board including a base film and a plurality of wiring lines disposed on a front surface of the base film. Each of the wiring lines has a front end surface extending in a longitudinal direction of the wiring line and two side surfaces extending in the longitudinal direction, and the side surfaces have an arithmetical mean roughness Ra of 0.05 ?m to 2.0 ?m. The wiring lines have an average height of 40 ?m to 120 ?m. The wiring lines have an average spacing of 1 ?m to 30 ?m.

Abstract: A flexible printed wiring board according to an aspect includes a base film, a conductive pattern disposed on one surface of the base film, and an extra length absorbing portion protruding from the base film and disposed in a direction of a plane, the extra length absorbing portion including a pattern connected portion connected to the conductive pattern, a coupling portion having a first linear wiring portion, a first arcuate wiring portion, and a second linear wiring portion coupled in this order continuously from the pattern connected portion, and a connecting terminal connected to the coupling portion, the pattern connected portion and the connecting terminal being opposite to each other in a direction in which the extra length absorbing portion protrudes.

Abstract: This on-vehicle communication system is an on-vehicle communication system including one or a plurality of switch devices each configured to relay data between a plurality of function units mounted to a vehicle. The on-vehicle communication system includes: a detection unit configured to detect an abnormality regarding a function unit; and a change unit configured to, when an abnormality has been detected by the detection unit, perform a protocol change process of causing the function unit for which the abnormality has been detected, to change a protocol that is used.

Abstract: A cutting tool, including: a base; and a coating disposed on the base, wherein the coating includes a first layer, the first layer is composed of an alternate layer in which a first unit layer and a second unit layer are alternately stacked, the first unit layer has a hexagonal crystal structure, the first unit layer is composed of W(C1-aNa)x, a represents 0.3 or more and 0.8 or less, x represents 0.8 or more and 1.2 or less, the second unit layer is composed of AlcTi1-cN, and c represents 0.30 or more and 0.75 or less.

Abstract: A resin composition for secondary coating of an optical fiber is a resin composition comprising: a non-reactive urethane compound having a number average molecular weight of 10000 or more and 40000 or less, a photopolymerizable compound, and a photopolymerization initiator, wherein the content of the non-reactive urethane compound is 0.05 parts by mass or more and 10 parts by mass or less based on the total amount of the resin composition of 100 parts by mass, and the non-reactive urethane compound is a reaction product of a polyol having a number average molecular weight of 1800 or more and 4500 or less, a diisocyanate, and a compound having active hydrogen.

Abstract: An in-vehicle device mounted to a vehicle includes: a storage unit configured to store characteristic data indicating a characteristic of a transmission path in an in-vehicle network mounted to the vehicle; a measurement unit configured to measure the characteristic of the transmission path; and an authentication unit configured to perform an authentication process for the transmission path by using a comparison result between the characteristic data in the storage unit and a measurement result by the measurement unit.

Abstract: A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises a total of 80% by volume or more of the tungsten carbide particles and the binder phase, the cemented carbide comprises 0.1% by volume or more and 20% by volume or less of the binder phase, the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, hafnium, and molybdenum, the cemented carbide comprises a total of 0.01 atomic % or more and 10.0 atomic % or less of the first element, the binder phase comprises 50% by mass or more of cobalt, and the first element is not segregated in a first interface region between the tungsten carbide particles adjacent to each other.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a Young's modulus of the binder phase at 25° C. is 170 GPa or more, as measured by a nanoindenter method.

Abstract: A detection device includes: a signal output unit configured to output a measurement signal having a frequency component to a target line; a measurement unit configured to receive, from the target line, a response signal including a signal in which the measurement signal is reflected, and measure at least one of an amplitude and a phase of the received response signal; and a detection unit configured to calculate an evaluation value based on a measurement result obtained by the measurement unit, and detect a change in a level of bending of the target line, based on a change over time in the calculated evaluation value.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.5% by volume or more and 23% by volume or less of the binder phase, the binder phase contains 40% by mass or more of cobalt, the binder phase further contains at least one first element selected from the group consisting of silicon, phosphorus, germanium, tin, rhenium, ruthenium, osmium, iridium, and platinum, the first element is not segregated in a first interface region between the tungsten carbide grains that are adjacent to each other, and the first element is not segregated in a second interface region between the tungsten carbide grain and binder phase that are adjacent to each other.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (Y2/Y1)×100 of a Young's modulus of the binder phase at 600° C., Y2 GPa, to a Young's modulus at 25° C., Y1 GPa, as measured by a nanoindenter method is 50% or more.

Abstract: A coil device has a first surface and a second surface as end surfaces of the coil device in a thickness direction. The coil device includes at least one printed wiring board, a first protective layer, and an external connection terminal. Each of the at least one printed wiring board has a first base film including a first main surface and a second main surface as a surface opposite to the first main surface, a first coil wire spirally formed on the first main surface, and a second coil wire spirally formed on the second main surface. The first protective layer covers the first main surface of one of the at least one printed wiring board disposed closest to the first surface. The external connection terminal is formed on the first protective layer, and is electrically connected to the first coil wire.

Abstract: A planar antenna includes a dielectric substrate, a feed line on a first surface of the dielectric substrate that has a first and second lateral sides, three rectangular-shaped radiation elements arrayed on the first surface and provided at the first and second lateral sides to alternately protrude, and an electromagnetic band gap structure having an arrangement region on the first surface. The first surface includes a first adjacent region adjacent to the first lateral side and a second adjacent region adjacent to the second lateral side. The arrangement region includes a first arrangement region in the first adjacent region and a second arrangement region in the second adjacent region. Part of the first arrangement region is closer to the feed line with respect to a first imaginary line, and part of the second arrangement region is closer to the feed line with respect to a second imaginary line.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (H2/H1)×100 of a hardness of the binder phase at 600° C., H2 GPa, to a hardness at 25° C., H1 GPa, as measured by a nanoindenter method is 25% or more.

Abstract: Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I405/I412 between an intensity I405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I412 of a peak which appears at an energy of 412±2 eV is less than 1.5.

Abstract: A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the second photoresist film, applying a shrink material to an upper surface of the second photoresist film and an inside of the opening, and reacting the shrink material and the second photoresist film in the inside of the opening by heat-treating the first photoresist film, the second photoresist film and the shrink material, and removing an unreacted shrink material that do not react with the second photoresist film from the upper surface of the second photoresist film and the inside of the opening.

Abstract: An apparatus according to an aspect of the present disclosure is a mobile relay station mounted on a vehicle, including: an antenna system capable of transmitting and receiving radio waves both inside and outside the vehicle; and a wireless control station capable of controlling directivity of the antenna system and having a function of switching between a first relay mode and a second relay mode described below, wherein the wireless control station switches the first and second relay modes on or off based on predetermined control information. First relay mode: mode for relaying communication between a wireless communication device outside the vehicle and a wireless communication device inside the vehicle. Second relay mode: mode for relaying communication between a wireless communication device outside the vehicle and another wireless communication device outside the vehicle.