Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when am atomic concentration of tin is from 1.0×1018 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.
Abstract: An optical transceiver includes a housing and an optical receptacle; optical subassemblies each having a sleeve and being configured to perform a photoelectric conversion, the sleeve facing to the optical receptacle; inner fibers each connected to the sleeve one to one; and a tray having a holding part and a guiding part, the holding part holding the optical subassemblies in line, the guiding part being formed on both outer sides of the holding part and a folding back area on an opposite side of the optical receptacle. The guiding part includes a pair of passage parts. The inner fiber passes through one of the passage parts, the folding back area, and another of the passage parts in this order within the tray so as to face the optical receptacle again when the another of the passage parts is closer to the sleeve than the one of the passage parts.
Abstract: This wireless communication device includes: a wireless communication unit of which operation is allowed to be activated and stopped; a determination unit configured to determine whether or not a measurement result by a sensor satisfies a predetermined condition; and a controller configured to perform control of, when the determination unit has determined that the predetermined condition has been satisfied, activating the wireless communication unit of which operation has been stopped, and causing the wireless communication unit to transmit the measurement result or a determination result by the determination unit.
Abstract: A method of producing a boron nitride polycrystal includes: a first step of obtaining a thermally treated powder by thermally treating a powder of a high pressure phase boron nitride at more than or equal to 1300° C.; and a second step of obtaining a boron nitride polycrystal by sintering the thermally treated powder under a condition of 8 to 20 GPa and 1200 to 2300° C.
Abstract: An antenna module 4 includes one antenna base 25 having a radiation surface 25a inclined relative to an opening plane 23 at which a radome 22 is attached, and another antenna base 25 having a radiation surface 25a inclined in a direction different from the one antenna base 25.
Abstract: Provided is an insulated electrical cable including: a core wire made up of at least one insulated wire including a conductor and an insulating layer covering the conductor; an inner sheath layer covering the core wire; and an outer sheath layer covering the inner sheath layer. The inner sheath layer has an elastic modulus A at ?30° C. in a range from 10 MPa to 1000 MPa.
Abstract: A coherent receiver comprising: a signal port receiving the signal light that has two polarization components at right angles each other; a polarization dependent beam splitter (PBS) that splits the signal light into two portions depending on the polarizations contained in the signal light; a beam splitter (BS) that splits the local light into two portions; a multi-mode interference (MMI) device that interferes between one of the two portions of the signal light and one of the two portions of the local light; optical components provided between the PBS and the MMI device; and wherein the PBS splitting a first wavelength range of the signal light and a second wavelength range outside the first wavelength range.
August 30, 2019
Date of Patent:
September 27, 2022
Sumitomo Electric Industries, Ltd., Sumitomo Electric Device Innovations, Inc.
Munetaka Kurokawa, Yasushi Fujimura, Ken Ashizawa, Satoru Kanemaru
Abstract: A method for manufacturing an optical fiber, the method including: a stripping step of partially stripping a coating layer of the optical fiber; a splicing step of fusion-splicing an exposed end surface of a glass fiber; and a recoating step of recoating a protective resin covering a stripped portion of the coating layer and an exposed portion of the glass fiber, in which the stripping step is a step of irradiating the coating layer with a laser light to strip the coating layer.
Abstract: One embodiment of the present disclosure relates to an SFG (slanted fiber grating) that can easily realize a high-performance gain equalizer. The SFG includes an optical fiber comprised of silica-based glass and including a core, a first cladding containing a photosensitive material, and a second cladding. A specific section between two different points arranged along a fiber axis in the optical fiber is configured with a first region, a pair of second regions, and a third region. The first region includes a slanted Bragg grating provided in a region as the first cladding. The pair of second regions are arranged to sandwich the first region. The third region is disposed to sandwich both the first region and the pair of second regions. An MFD at a wavelength of 1.55 ?m in the third region is smaller than an MFD at a wavelength of 1.55 ?m in the first region.
April 6, 2021
Date of Patent:
September 20, 2022
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Shigehiro Nagano, Manabu Shiozaki, Jun Kinugasa, Takemi Hasegawa
Abstract: A parameter estimation device configured to estimate a parameter of an equivalent circuit model of a secondary battery includes: a voltage acquisition unit configured to acquire a voltage of the secondary battery in a time-series manner; a current acquisition unit configured to acquire a charge/discharge current of the secondary battery in a time-series manner; an estimation unit configured to estimate the parameter on the basis of the voltage acquired by the voltage acquisition unit and the charge/discharge current acquired by the current acquisition unit; and a prohibition unit configured to prohibit the estimation of the parameter performed by the estimation unit, on the basis of the charge/discharge current acquired by the current acquisition unit or the voltage acquired by the voltage acquisition unit.
Abstract: A flexible printed wiring board according to an aspect includes a base film, a conductive pattern disposed on one surface of the base film, and an extra length absorbing portion protruding from the base film and disposed in a direction of a plane, the extra length absorbing portion including a pattern connected portion connected to the conductive pattern, a coupling portion having a first linear wiring portion, a first arcuate wiring portion, and a second linear wiring portion coupled in this order continuously from the pattern connected portion, and a connecting terminal connected to the coupling portion, the pattern connected portion and the connecting terminal being opposite to each other in a direction in which the extra length absorbing portion protrudes.
July 9, 2020
September 15, 2022
SUMITOMO ELECTRIC PRINTED CIRCUITS, INC., SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO WIRING SYSTEMS, LTD., AUTONETWORKS TECHNOLOGIES, LTD.
Abstract: A printed board includes a first wiring layer including a first terminal, a second wiring layer including a second terminal facing to the first terminal, a dielectric layer interposed between the first wiring layer and the second wiring layer and having an end face, and a plurality of through-hole vias configured to electrically connect the first terminal and the second terminal. The plurality of through-hole vias includes a first through-hole via which is closest to an end-face edge of the first terminal, and a second through-hole via which is closest to an inner edge of the second terminal. The end-face edge being closer to the end face than the inner edge. A distance between the first through-hole via and the end-face edge is equal to or smaller than one eighth of a signal wavelength of a high speed signal transmitted through the first terminal.
Abstract: A semiconductor device includes a semiconductor chip mounted on an upper surface of a base substrate and having an output pad, a first capacitive component mounted on the upper surface of the base substrate and having one end electrically connected to the base substrate, a frame provided on the base substrate and made of a dielectric surrounding the semiconductor chip and the first capacitive component, an output terminal provided on the frame, a wiring pattern provided on an upper surface of the frame, a first bonding wire electrically connecting the output pad to the output terminal, a second bonding wire electrically connecting another end of the first capacitive component to a first region in the wiring pattern, and a third bonding wire electrically connecting the output pad to a second region different from the first region in the wiring pattern.
Abstract: A carbon material has at least either a peak related to diamond bonds, or a peak related to diamond-like bonds, appearing in a range of 1250 to 1400 cm?1 in a spectrum measured by Raman scattering spectrometry, and a full width at half maximum of a maximum peak, or each of full widths at half maximum of the maximum peak and a second largest peak, among peaks appearing in the range of 1250 to 1400 cm?1, has a signal less than 100 cm?1.
November 21, 2017
Date of Patent:
September 13, 2022
SUMITOMO ELECTRIC INDUSTRIES, LTD., KYOTO UNIVERSITY
Abstract: An authentication control device includes: an acquisition unit configured to acquire predetermined identification information regarding an on-vehicle device to be newly added to an on-vehicle network; and a determination unit configured to determine which of a plurality of types of authentication procedures is to be applied as an authentication process for the on-vehicle device, on the basis of the identification information acquired by the acquisition unit.
Abstract: An InP substrate, being a group III-V compound semiconductor substrate, that includes, on a main surface thereof, 0.22 particles/cm2 that have a particle diameter of at least 0.19 ?m or 20 particles/cm2 that have a particle diameter of 0.079 ?m. An InP substrate with an epitaxial layer, being a group III-V compound semiconductor substrate with an epitaxial layer, includes: the InP substrate and an epitaxial layer arranged upon the main surface of the InP substrate; and, upon the main surface thereof when the thickness of the epitaxial layer is 0.3 ?m, no more than 10 LPD that have a circle-equivalent diameter of at least 0.24 ?m, per cm2, or no more than 30 LPD that have a circle-equivalent diameter of at least 0.136 ?m, per cm2. As a result, a group III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown upon a main surface thereof and a group III-V compound semiconductor substrate with an epitaxial layer are provided.
Abstract: A method for manufacturing a semiconductor device includes steps of forming a protective film on a semiconductor substrate, forming a resist film on the protective film such that the resist film includes a region where the resist film becomes thicker from a drain electrode to a source electrode, forming a first opening in the resist film by irradiating the resist film in the region with an electron beam and developing the resist film, forming a second opening that exposes an upper surface of the semiconductor substrate by removing the protective film using the resist film in which the first opening is formed as a mask, forming a third opening in the resist film by further developing the resist film after forming the second opening, the third opening being formed by expanding the first opening toward the drain electrode, and forming a gate electrode in the second and the third openings.
Abstract: A surface emitting laser includes a substrate, a lower contact layer disposed on the substrate, a semiconductor layer mesa including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer which are laminated, in the order named, on the lower contact layer, an annular electrode disposed on the upper contact layer, and a light transmitting window situated inside the annular electrode to transmit laser light, wherein the upper reflector layer includes a first region and a second region, the first region being inclusive of an area situated directly below the electrode and the light transmitting window, the second region being inclusive of an area outside the mesa and inclusive of a surrounding area of the first region within the mesa, and wherein a proton concentration in the first region is lower than a proton concentration in the second region.
Abstract: A composite cable includes an electric wire bundle, and an outer layer sheath covering the electric wire bundle. The electric wire bundle includes a one-core first electric wire, a one-core second electric wire, a two-core twisted pair electric wire, a one-core third electric wire, and one wire-like interposed material formed in the shape of a wire using a polymer. In the electric wire bundle, in a cross sectional view the twisted pair electric wire is disposed on one side of a centerline joining the center of the first electric wire and the center of the second electric wire, and the third electric wire and the wire-like interposed material are disposed on the other side of the centerline.
November 28, 2019
Date of Patent:
September 13, 2022
SUMITOMO WIRING SYSTEMS, LTD., SUMITOMO ELECTRIC INDUSTRIES, LTD.
Kenta Kobayashi, Jo Yagisawa, Masayuki Ishikawa, Takumi Ooshima