Patents Assigned to Sumitomo Electric Industries, Ltd.
  • Publication number: 20200273606
    Abstract: Provided are a core electric wire for multi-core cable that is superior in flex resistance at low temperature, and a multi-core cable employing the same. A core electric wire for multi-core cable according to an aspect of the present invention comprises a conductor obtained by twisting element wires, and an insulating layer that covers an outer periphery of the conductor, in which, in a transverse cross section of the conductor, a percentage of an area occupied by void regions among the element wires is from 5% to 20%. An average area of the conductor in the transverse cross section is preferably from 1.0 mm2 to 3.0 mm2. An average diameter of the element wires in the conductor is preferably from 40 ?m to 100 ?m, and the number of the element wires is preferably from 196 to 2,450. The conductor is preferably obtained by twisting stranded element wires obtained by twisting subsets of element wires.
    Type: Application
    Filed: April 30, 2020
    Publication date: August 27, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shigeyuki TANAKA, Shinya NISHIKAWA, Hiroyuki OKAWA, Takaya KOHORI, Yuhei MAYAMA, Takayuki HIRAI
  • Publication number: 20200274621
    Abstract: An optical transmitter includes a bias supplying unit configured to supply a first bias voltage, a second bias voltage and a third bias voltage to an optical modulator. The bias supplying unit acquires a first voltage value at which an average value of an optical output signal becomes maximum by sweeping the first bias voltage, acquires a second voltage value at which an average value of the optical output signal becomes maximum by sweeping the second bias voltage, and acquires a third voltage value at which an average value of the optical output signal becomes maximum by sweeping the third bias voltage. The bias supplying unit determines a value of the first bias voltage based on the first voltage value, determines a value of the second bias voltage based on the second voltage value, and determines a value of the third bias voltage based on the third voltage value.
    Type: Application
    Filed: February 20, 2020
    Publication date: August 27, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Shingo YAMANAKA
  • Publication number: 20200274690
    Abstract: A control method of an optical transceiver has an interrupt processing step of interrupting repetitive processing step in response to a command from a host apparatus and executing an interrupt process for transmitting monitoring data, and a step of setting the processing mode of the interrupt process to a first processing mode when one cycle of the repetitive processing step is shorter than a specific value, and setting the processing mode to a second processing mode when one cycle of the repetitive processing step is longer than the specific value. The interrupt process stores first data in the transmission register and stopping stretching of a clock signal, and reading out second data to be transmitted next from the memory unit. Furthermore, the interrupt process stops stretching of the clock signal after storing the first data in the transmission register and reading out the second data from the memory unit.
    Type: Application
    Filed: February 26, 2020
    Publication date: August 27, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiromi TANAKA
  • Patent number: 10756188
    Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate includes a first impurity region, a second impurity region, a third impurity region, a fourth impurity region, a fifth impurity region, and a sixth impurity region. A first main surface of the silicon carbide substrate is provided with a trench defined by a side surface and a bottom portion. The sixth impurity region includes a first region which faces the bottom portion and a second region which faces a second main surface of the silicon carbide substrate. The first region is higher in impurity concentration than the second region. In a direction perpendicular to the second main surface, a fifth main surface of the fourth impurity region is located between a sixth main surface of the second impurity region and the second main surface.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: August 25, 2020
    Assignees: Sumitomo Electric Industries, Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Toru Hiyoshi, Takeyoshi Masuda, Ryouji Kosugi
  • Patent number: 10756168
    Abstract: A silicon carbide semiconductor device includes: a silicon carbide substrate; a first silicon carbide layer disposed on the silicon carbide substrate; a second silicon carbide layer disposed on the first silicon carbide layer; a third silicon carbide layer disposed on the second silicon carbide layer; a fourth silicon carbide layer disposed on the third silicon carbide layer; and a first impurity region formed to extend through the second silicon carbide layer, the third silicon carbide layer and the fourth silicon carbide layer. A trench is formed in the silicon carbide semiconductor device. The silicon carbide semiconductor device includes: a gate insulating film in contact with a wall of the trench; a gate electrode; a second impurity region disposed below the trench; a third impurity region formed below the first impurity region; and a fourth impurity region formed between the second impurity region and the third impurity region.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: August 25, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Toru Hiyoshi
  • Patent number: 10756507
    Abstract: A process of forming a semiconductor optical device is disclosed. The semiconductor optical device provides a waveguide structure accompanied with a heater for varying a temperature of the waveguide structure. The process includes steps of: (a) forming a striped mask on a semiconductor substrate; (b) selectively growing a dummy layer on the semiconductor substrate; (c) removing the patterned mask; (d) burying the dummy layer by a supplemental layer; (e) exposing a portion of the dummy layer by etching a portion of the supplemental layer; (f) and removing the dummy layer by immersing the dummy layer within a solution that shows an etching rate for the dummy layer enough faster than an etching rate for the supplemental layer and the substrate so as to leave a void in a region the dummy layer had existed.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: August 25, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Device Innovations, Inc.
    Inventors: Toshimitsu Kaneko, Takuya Fujii, Masami Ishiura, Taro Hasegawa, Toshiyuki Taguchi
  • Patent number: 10752974
    Abstract: This invention provides a high-strength PC steel wire having a chemical composition containing, in mass %, C: 0.90 to 1.10%, Si: 0.80 to 1.50%, Mn: 0.30 to 0.70%, P: 0.030% or less, S: 0.030% or less, Al: 0.010 to 0.070%, N: 0.0010 to 0.010%, Cr: 0 to 0.50%, V: 0 to 0.10%, B: 0 to 0.005%, Ni: 0 to 1.0%, Cu: 0 to 0.50%, and the balance: Fe and impurities. A ratio between the Vickers hardness (HvS) at a location (surface layer) that is 0.1D [D: diameter of steel wire] from the surface of the steel wire and the Vickers hardness (HvI) of a region on the inner side relative to the surface layer satisfies the formula [1.10<HvS/HvI?1.15]. The steel micro-structure in the region from the surface of the steel wire to 0.01D (outermost layer region) consists of, in area %, a pearlite structure: less than 80%, and the balance: a ferrite structure and/or a bainitic structure.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: August 25, 2020
    Assignees: NIPPON STEEL CORPORATION, SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Makoto Okonogi, Daisuke Hirakami, Masato Yamada, Katsuhito Oshima, Shuichi Tanaka
  • Patent number: 10754064
    Abstract: Problem to Be Solved: to provide a chromophore having a far superior nonlinear optical activity to conventional chromophores and to provide a nonlinear optical element comprising said chromophore. Solution: a chromophore comprising a donor structure D, a ?-conjugated bridge structure B, and an acceptor structure A, the donor structure D comprising an aryl group substituted with a substituted oxy group; and a nonlinear optical element comprising said chromophore.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: August 25, 2020
    Assignees: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, SUMITOMO ELECTRIC INDUSTRIES, LTD., KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Akira Otomo, Isao Aoki, Hideki Miki, Hidehisa Tazawa, Shiyoshi Yokoyama
  • Publication number: 20200266451
    Abstract: A solid-oxide-electrolysis-cell-type hydrogen production apparatus includes a cell structure including a first electrode, a second electrode, and an electrolyte layer, a gas diffusion layer disposed adjacent to the first electrode, and a gas channel plate disposed adjacent to the gas diffusion layer, in which the gas diffusion layer is formed of a porous metal body having a three-dimensional mesh-like skeleton, the gas channel plate includes a first region including a first channel, a second region including a second channel, and a third region including a third channel, the first channel includes a slit extending from the center of the gas channel plate toward its outer edge at the boundary surface between the first region and the second region, letting the total area of the first channel at the boundary surface be a first opening area S1, letting the total area of the second channel at the boundary surface between the second region and the third region be a second opening area S2, and letting the total area
    Type: Application
    Filed: May 7, 2020
    Publication date: August 20, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Chihiro HIRAIWA, Takahiro HIGASHINO, Hiromasa TAWARAYAMA, Masatoshi MAJIMA, Toshihiro YOSHIDA, Kazunari MIYAMOTO
  • Publication number: 20200262735
    Abstract: Provided is a method for producing a glass particulate deposit, the method including disposing at least one burner at a position facing a rod that rotates around an axis, and spraying glass particulates generated in the flame from the burner to the rod while relatively reciprocating the rod and the burner in the axis direction of the rod, to deposit glass particulates, wherein the relation of 0.1 W?V/R?1.0 W is satisfied, where W mm represents the luminance width of the flame of the glass raw material, R rotations/min represents the rotational speed of the rod, and V mm/min represents the speed of the reciprocation.
    Type: Application
    Filed: August 28, 2018
    Publication date: August 20, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Masatoshi HAYAKAWA, Masumi ITO
  • Publication number: 20200262749
    Abstract: A resin composition includes a base resin containing a urethane (meth)acrylate oligomer, a monomer having a phenoxy group, a photopolymerization initiator, and a silane coupling agent and hydrophobic inorganic oxide particles, wherein the content of the inorganic oxide particles is 1% by mass or more and 45% by mass or less based on the total amount of the resin composition.
    Type: Application
    Filed: October 4, 2019
    Publication date: August 20, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Katsushi HAMAKUBO
  • Patent number: 10746946
    Abstract: A host board for mounting an optical transceiver includes a connector that is configured to attach thereto and detach therefrom an optical transceiver having at least one lane and includes electrical contacts as many as the at least one lane, a management unit configured to receive lane information regarding the at least one lane of the optical transceiver from the optical transceiver through the connector and specify an available electrical contact, and a communication unit configured to communicate with the optical transceiver through the connector. The communication unit is configured to communicate information with the optical transceiver through the electrical contact specified by the management unit.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: August 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tomoyuki Funada, Daisuke Umeda, Naruto Tanaka
  • Patent number: 10748678
    Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a ?? of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: August 18, 2020
    Assignees: Toyo Kohan Co., Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Teppei Kurokawa, Yusuke Hashimoto, Hironao Okayama, Tatsuoki Nagaishi, Kotaro Ohki, Genki Honda
  • Patent number: 10749202
    Abstract: A redox flow battery includes a cell frame having a frame body in which a sealing groove is formed and a sealing member disposed in the sealing groove. The redox flow battery includes an adhesive that fixes the sealing member to the sealing groove, and a type A durometer hardness of the adhesive after curing is 100 or less. Preferably, the type A durometer hardness of the adhesive after curing is less than or equal to a type A durometer hardness of the sealing member.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: August 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kousuke Shiraki, Takashi Kanno, Haruhisa Toyoda, Takefumi Ito, Masahiro Kuwabara, Hideyuki Yamaguchi, Hayato Fujita, Kiyoaki Hayashi
  • Patent number: 10750579
    Abstract: An induction heating device includes: a rotor having a rotation shaft; a heating part disposed to be opposed to the rotor at a distance; a magnetic flux generating part provided at the rotor to generate magnetic flux for the heating part; a magnetic flux guide part provided on an opposed surface side of the heating part that is opposed to the magnetic flux generating part to guide the magnetic flux from the magnetic flux generating part to the heating part; and a flow passage provided in the heating part to allow a heating medium to circulate. The magnetic flux guide part includes magnetic substance parts. The magnetic flux guide part has a structure in which the magnetic substance parts and the insulator parts extend along a direction from the magnetic flux generating part to the heating part and are alternately layered along a circumferential direction of the heating part.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: August 18, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Kyoto University
    Inventors: Toru Okazaki, Tetsuji Matsuo
  • Publication number: 20200255979
    Abstract: A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2×1017 to 4×1018 cm?3, and has an average dislocation density of 1000 to 5×107 cm?2 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.
    Type: Application
    Filed: February 23, 2018
    Publication date: August 13, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yusuke YOSHIZUMI, Hideki OSADA, Shugo MINOBE, Yoshiaki HAGI
  • Publication number: 20200259198
    Abstract: The battery cell for a flow battery includes a cell frame including a frame including a through-window and a manifold serving as an electrolyte flow path, and a bipolar plate blocking the through-window; a positive electrode disposed on one surface side of the bipolar plate; and a negative electrode disposed on another surface side of the bipolar plate. In this battery cell, in the frame, a thickness of a portion in which the manifold is formed is defined as Ft; in the bipolar plate, a thickness of a portion blocking the through-window is defined as Bt; in the positive electrode, a thickness of a portion facing the bipolar plate is defined as Pt; in the negative electrode, a thickness of a portion facing the bipolar plate is defined as Nt; and these thicknesses satisfy Ft?4 mm, Bt?Ft?3.0 mm, Pt?1.5 mm, and Nt?1.5 mm.
    Type: Application
    Filed: January 17, 2019
    Publication date: August 13, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Takashi Kanno, Katsuya Yamanishi, Takefumi Ito, Masahiro Kuwabara, Kiyoaki Moriuchi, Hideyuki Yamaguchi, Hayato Fujita, Kousuke Shiraki, Kiyoaki Hayashi
  • Publication number: 20200258659
    Abstract: An electronic wire and a cable which are excellent in bending resistance even when a diameter is small. The electronic wire has a conductor and a resin insulating layer coated on the conductor. The conductor is a double twisted wire in which twisted wires formed by twisting a plurality of wires are twisted, a diameter of the wire is 0.05 mm or more and 0.2 mm or less, a cross-sectional area of the conductor is 1.0 mm2 or more and 3.0 mm2 or less, a breaking elongation of the conductor is 10% or more and 17% or less, a tensile strength of the conductor is 200 MPa or more and 400 MPa or less, and the insulating layer is disposed to be in close contact with the conductor and has a solid structure.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 13, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Takaya KOHORI, Hiroyuki OKAWA
  • Publication number: 20200257043
    Abstract: Provided is a glass eccentricity measurement device which includes an irradiation unit that irradiates a side surface of a coated glass fiber obtained by coating the striated glass with light, and a light receiving unit that receives light scattered and/or refracted following irradiation of the side surface of the coated glass fiber therewith, and measures an eccentricity of the glass in the coated glass fiber by a pattern of brightness and darkness in the light received by the light receiving unit, in which three or more sets including the irradiation unit and a screen are provided around the coated glass fiber, and the sets are arranged respectively in directions having different angles on a circumference centered on the coated glass fiber.
    Type: Application
    Filed: November 1, 2018
    Publication date: August 13, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroshi KOHDA
  • Patent number: 10737361
    Abstract: A machining jig holds a workpiece with respect to a tool that partially removes an outer peripheral surface of the workpiece. The machining jig includes a first jig including an inner peripheral surface having a shape similar to a contour of the workpiece and an outer peripheral surface including a first inclined section inclined with respect to an axial direction of the workpiece; a second jig including an inner peripheral surface including a second inclined section configured to be fitted to the first inclined section; a base to which the second jig is coaxially fixed; and a sliding mechanism that enables a large-diameter portion of the first inclined section and a small-diameter portion of the second inclined section to move toward and away from each other.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: August 11, 2020
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC SINTERED ALLOY, LTD.
    Inventors: Tomoyuki Ishimine, Hirofumi Kiguchi