Abstract: Provided is a method for controlling a donor concentration in a Ga2O3-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a Ga2O3-based single crystal body and an electrode. A donor concentration in a Ga2O3-based single crystal body is controlled by a method which includes a step wherein Si, which serves as a donor impurity, is introduced into the Ga2O3-based single crystal body by an ion implantation method at an implantation concentration of 1×1020 cm?3 or less, so that a donor impurity implanted region is formed in the Ga2O3-based single crystal body, the donor impurity implanted region having a higher donor impurity concentration than the regions into which Si is not implanted, and a step wherein Si in the donor impurity implanted region is activated by annealing, so that a high donor concentration region is formed.

Abstract: A semiconductor device, includes an n-type semiconductor layer provided with a first semiconductor layer with a low electron carrier concentration and a second semiconductor layer with a high electron carrier concentration, an electrode that is in Schottky-contact with a surface of the first semiconductor layer, and an ohmic electrode formed on a surface of the second semiconductor layer. The n-type semiconductor layer is formed of a Ga2O3-based single crystal. The first semiconductor layer has an electron carrier concentration Nd based on reverse withstand voltage VRM and electric field-breakdown strength Em of the Ga2O3-based single crystal.

Abstract: Divided cores 11, 12 includes left and right leg portions and a yoke portion and formed by molding a yoke portion side core material within resin. The leg portions of the divided core are formed by tubular core mounting portions 41, 42. I-shaped leg portion side core materials 51-53 and spacers 6 are mounted in the tubular core mounting portions. A ring-shaped molded core 1 is formed by abutting and integrating the respective leg portions of two divided cores, and a coil 100 is wound around the molded core.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: A coil includes a coil unit provided with a wire and a self-melting layer formed on surfaces of the wire, and a resin member affixed to the wire. The wire is adhered and affixed to the resin member by the self-melting layer.

Abstract: U-shaped cores and fasteners are embedded in resin members, and brackets provided at respective ends of the fasteners protrude from the resin members. By fixing the brackets and a casing with screws, a reactor main body and the casing are fixed together. Openings formed by a partition wall that suppresses a direct application of a resin flowing from resin-filling portions to the fasteners are provided between the respective fasteners and the respective resin-filling portions. A protrusion extending in an opposite direction to a core and in parallel with the partition wall is provided between the resin-filling portions and the partition wall. The resin flowing from the resin-filling portion flows in between a core upper face and the fastener, and between a fastener surface located behind the partition wall and the internal surface of a die.

Abstract: A reactor includes a core made of a magnetic material; a resin mold that encloses the core; a coil that is wound around the core through the resin mold; a plurality of fasteners located on the resin mold; and a supporting member that is secured to the resin mold through the fasteners. At least one of the plurality of fasteners is a flexible fastener.

Abstract: A Ga2O3 based crystal film forming method includes epitaxially growing a Ga2O3 based crystal film over a Ga2O3 based substrate. A growth temperature for the crystal film is not lower than 560 degrees Celsius. A VI/III ratio in an atmosphere adjacent to a growing surface when the crystal film is grown is smaller than ½, or greater than 2. A crystal laminated structure includes a Ga2O3 based substrate including a first group IV element, and a Ga2O3 based crystal film including a second group IV element, the crystal film being formed over the substrate, and having a surface roughness (RMS) of smaller than 1 nm, and a thickness of not smaller than 300 nm. A coefficient of variation of a concentration distribution of the second group IV element in a depth direction in the crystal film is not more than 20 percent.

Abstract: A Ga2O3 semiconductor element, includes: an n-type ?-Ga2O3 substrate; a ?-Ga2O3 single crystal film, which is formed on the n-type ?-Ga2O3 substrate; source electrodes, which are formed on the ?-Ga2O3 single crystal film; a drain electrode, which is formed on the n-type ?-Ga2O3 substrate surface on the reverse side of the ?-Ga2O3 single crystal film; n-type contact regions, which are formed in the ?-Ga2O3 single crystal film, and have the source electrodes connected thereto, respectively; and a gate electrode, which is formed on the ?-Ga2O3 single crystal film with the gate insulating film therebetween.

Abstract: A lead-free solder alloy includes: 1 wt % to 4 wt % of Ag; 0.5 wt % to 1 wt % of Cu; 1 wt % to 5 wt % of Sb; 0.05 wt % to 0.25 wt % of at least one of Ni and Co; and Sn.

Abstract: A Ga2O3 semiconductor element includes: an n-type ?-Ga2O3 single crystal film, which is formed on a high-resistance ?-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type ?-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type ?-Ga2O3 single crystal film between the source electrode and the drain electrode.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.

Abstract: A reactor includes a core made of a magnetic material; a resin mold that encloses the core; a coil that is wound around the core through the resin mold; a plurality of fasteners located on the resin mold; and a supporting member that is secured to the resin mold through the fasteners. At least one of the plurality of fasteners is a flexible fastener.

Abstract: A charging apparatus for a secondary battery comprises: a power supply circuit connected to a primary winding 11a of a transformer T1; a main winding 11b and a sub winding 11c connected to a secondary side of the transformer T1; a charging circuit 110 connected to the main winding 11b, the charging circuit 110 supplying power to a battery pack 130 to be charged; and a control circuit 120 connected to the sub winding 11c, the control circuit 120 controlling the charging circuit 110, wherein the charging circuit 110 comprises a LED 140 indicating a standby state or a charge completion state, the LED 140 being lighted at light-load time of the charging circuit 110 based on a command of the control circuit 120.

Abstract: A Schottky barrier diode includes an n-type semiconductor layer including a Ga2O3-based compound semiconductor with n-type conductivity, and an electrode layer that is in Schottky-contact with the n-type semiconductor layer. A first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first semiconductor layer are formed in the n-type semiconductor layer. The second semiconductor layer includes a ?-Ga2O3 substrate including a main plane rotated by an angle not less than 50° and not more than 90° with respect to a (100) plane thereof.

Abstract: A Ga2O3 semiconductor element includes: an n-type ?-Ga2O3 single crystal film, which is formed on a high-resistance ?-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type ?-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type ?-Ga2O3 single crystal film between the source electrode and the drain electrode.

Abstract: Provided is a dust core and a method for manufacturing a thereof, having an effect that the soft magnetic powder is prevented from sintering and bonding together upon heating, the hysteresis loss can be effectively reduced, and the DC B-H characteristics is excellent. In a first mixing process, a soft magnetic powder composed mainly of iron and an inorganic insulating powder of 0.4 wt %-1.5 wt % are mixed by a mixer. A mixture obtained in the first mixing process is heated in a non-oxidizing atmosphere at 1000° C. or more and below a sintering temperature of the soft magnetic powder. In a binder addition process, a silane coupling agent of 0.1-0.5 wt % is added. A binder, e.g. a silicone resin of 0.5-2.0 wt % is added to the soft magnetic alloy powder to which the inorganic insulating powder is attached by the silane coupling agent, and the soft magnetic alloy powders are bonded to each other so as to be granulated.

Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.