Patents Assigned to Tamura Corporation
  • Transformer and switched-mode power supply apparatus
    Patent number: 10262789
    Abstract: A transformer is capable of suppressing the output voltage difference, and a switched-mode power supply apparatus uses the transformer. A transformer has a core; a primary winding provided in the core; a gap provided in the core at a location where the primary winding is provided; and at least two secondary windings, provided in the core and spaced apart from both sides of the primary winding as well as the gap at an equal distance in a winding axis direction of the primary winding. A switched-mode power supply apparatus has the transformer; a switching element connected to the primary winding of the transformer; and a control circuit configured to control the switching element.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: April 16, 2019
    Assignee: TAMURA CORPORATION
    Inventor: Hiroo Ogawa
  • CURRENT SENSOR
    Publication number: 20190107564
    Abstract: A current sensor includes core components that form a magnetic circuit and form a space where to dispose a probe coil on the magnetic circuit; and a clip that press-joins the core components with each other. Since magnetic reluctance decreases at a portion where the core components are press-joined by the clip, an amount of magnetic flux of an external magnetic field passing through this portion increases, and accordingly, an amount of magnetic flux interlinked with the probe coil decreases. This improves the immunity of the current sensor to an external magnetic field.
    Type: Application
    Filed: October 9, 2018
    Publication date: April 11, 2019
    Applicant: TAMURA CORPORATION
    Inventors: Kasuga AMANO, Yusuke OKAYAMA
  • Reactor
    Patent number: 10249428
    Abstract: A reactor is provided. The reactor includes a coil and a terminal block that is fixed to conductor wires that led out from both ends in a winding core direction of the coil. The terminal block includes an input-side terminal block that is fixed to an input-side conductor wire that leads out from one end of the coil, and an output-side terminal block that is fixed to an output-side conductor wire that leads out from another end portion of the coil. The input-side terminal block and the output-side terminal block are disposed on different levels in the winding core direction based on lead-out positions in the winding core direction of the input-side conductor wire and the output-side conductor wire.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: April 2, 2019
    Assignees: DAIKIN INDUSTRIES, LTD., TAMURA Corporation
    Inventors: Hideaki Tanaka, Kentarou Taoka, Motonobu Ikeda, Iwao Toyama, Yoshitaka Shimaya, Hiroki Imai
  • GaO-based semiconductor element
    Patent number: 10249767
    Abstract: A Ga2O3-based semiconductor element includes an undoped ?-Ga2O3 single crystal film disposed on a surface of a ?-Ga2O3 substrate, a source electrode and a drain electrode disposed on a same side of the undoped ?-Ga2O3 single crystal film, a gate electrode disposed on the undoped ?-Ga2O3 single crystal film between the source electrode and the drain electrode, and a region formed in the undoped ?-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: April 2, 2019
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATION TECHNOLOGY
    Inventors: Kohei Sasaki, Masataka Higashiwaki
  • Transformer and switched-mode power supply apparatus
    Patent number: 10249430
    Abstract: A transformer being capable of reducing cross regulation even in a case where the load is unbalanced and a switched-mode power supply apparatus using the transformer are provided. A transformer T has a core; a primary winding provided in the core; at least two secondary windings provided in the core around a winding axis which is the same as a winding axis of the primary winding; and at least two auxiliary windings provided in the core around a winding axis which is the same as the winding axis of the primary winding; respectively neighboring the secondary windings; and connected in parallel to each other. A switched-mode power supply apparatus has the transformer T; a switching element connected to the primary winding of the transformer T; and a control circuit configured to control the switching element.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: April 2, 2019
    Assignee: TAMURA CORPORATION
    Inventor: Hiroo Ogawa
  • FLUX, SOLDER PASTE, AND METHOD FOR FORMING SOLDER BUMP
    Publication number: 20190084097
    Abstract: A flux includes a rosin resin, an activator, a thixotropic agent, and a solvent. The solvent includes 30% by mass or more and 60% by mass or less monovalent alcohol with respect to a total mass amount of the flux. The monovalent alcohol has 18 or more and 24 or less of carbon atoms in one molecule.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 21, 2019
    Applicant: TAMURA CORPORATION
    Inventors: Masanori SHIBASAKI, Jun SUGIMOTO, Isao SAKAMOTO
  • LEAD-FREE SOLDER ALLOY, ELECTRONIC CIRCUIT SUBSTRATE, AND ELECTRONIC DEVICE
    Publication number: 20190076965
    Abstract: A lead-free solder alloy includes 1% by weight or more and 4% by weight or less of Ag, 1% by weight or less of Cu, 3% by weight or more and 5% by weight or less of Sb, 0.01% by weight or more and 0.25% by weight or less of Ni, and Sn.
    Type: Application
    Filed: September 8, 2017
    Publication date: March 14, 2019
    Applicant: TAMURA CORPORATION
    Inventors: Masaya ARAI, Takeshi NAKANO, Atsushi HORI, Tsukasa KATSUYAMA, Yurika MUNEKAWA
  • Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
    Patent number: 10230007
    Abstract: A semiconductor element includes a base substrate that includes a Ga2O3-based crystal having a thickness of not less than 0.05 ?m and not more than 50 ?m, and an epitaxial layer that includes a Ga2O3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga2O3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: March 12, 2019
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
    Inventors: Kohei Sasaki, Akito Kuramata, Masataka Higashiwaki
  • Coupled inductor
    Patent number: 10224141
    Abstract: A coupled inductor comprises an annular core 1 and coils 2a, 2b wound around the core. The annular core 1 includes a sendust core having a maximum differential permeability that is equal to or greater than 30.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: March 5, 2019
    Assignee: TAMURA CORPORATION
    Inventors: Naoki Inoue, Toshikazu Ninomiya
  • Reactor manufacturing method
    Patent number: 10224134
    Abstract: A method of manufacturing a reactor includes a pair of coils and a pair of core units of partial I-shaped cores with gap members butted together and mounted in the coils. The respective ends of the I-shaped cores are pressed against the ends of a pair of U-shaped cores. The U-shaped cores and the I-shaped cores are formed by pressing powder in movable dies that preheat any burrs formed during pressing to be positioned in a direction different from the winding axis direction to avoid any contact with the coil.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: March 5, 2019
    Assignee: TAMURA CORPORATION
    Inventors: Ryo Nakatsu, Toshikazu Ninomiya, Kotaro Suzuki, Tsutomu Hamada
  • GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
    Publication number: 20190062942
    Abstract: Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
    Type: Application
    Filed: October 26, 2018
    Publication date: February 28, 2019
    Applicant: TAMURA CORPORATION
    Inventor: Kohei SASAKI
  • ?-Ga2O3 single-crystal substrate
    Patent number: 10196756
    Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: February 5, 2019
    Assignees: TAMURA CORPORATION, KOHA CO., LTD.
    Inventors: Shinya Watanabe, Kimiyoshi Koshi, Yu Yamaoka, Kazuyuki Iizuka, Masaru Takizawa, Takekazu Masui
  • High voltage withstand Ga2O3-based single crystal schottky barrier diode
    Patent number: 10199512
    Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: February 5, 2019
    Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Ga2O3-based single crystal substrate, and production method therefor
    Patent number: 10161058
    Abstract: Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: December 25, 2018
    Assignee: Tamura Corporation
    Inventor: Kohei Sasaki
  • Water-based organic solderability preservative, and electronic board and surface treatment method using the same
    Patent number: 10149395
    Abstract: A water-based organic solderability preservative includes (A) an imidazole compound, (B) an organic acid, (C) a complex coating formation aid, (D) an organic solvent and (E) water. The component (D) (organic solvent) has a solubility to water of 10 g/100 g or more at 20 degrees C. and a boiling temperature in a range from 100 degrees C. to 300 degrees C.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: December 4, 2018
    Assignee: TAMURA CORPORATION
    Inventors: Yasutaka Ogawa, Kazutaka Nakanami
  • Transformer and switched-mode power supply apparatus
    Patent number: 10141101
    Abstract: A transformer being capable of reducing cross regulation even in a case where the load is unbalanced and a switched-mode power supply apparatus using the transformer are provided. A transformer T has a core; a primary winding provided in the core; at least two secondary windings provided in the core around a winding axis which is the same as a winding axis of the primary winding; and at least two auxiliary windings provided in the core around a winding axis which is the same as the winding axis of the primary winding; respectively neighboring the secondary windings; and connected in parallel to each other. A switched-mode power supply apparatus has the transformer T; a switching element connected to the primary winding of the transformer T; and a control circuit configured to control the switching element.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: November 27, 2018
    Assignee: Tamura Corporation
    Inventor: Hiroo Ogawa
  • Reactor
    Patent number: 10096420
    Abstract: A reactor includes a core, a resin cover provided around the core, and a coil disposed around the core at the external side of the resin cover. The coil includes a conductive wire having a self-fusing layer formed on the surface of the conductive wire, and the adjoining conductive wire portions are bonded together by the self-fusing layer. The resin cover includes a bonding portion provided at a part of the resin cover and facing the end portion of the coil, and the end portion of the coil are bonded with the resin cover by an adhesive at the bonding portion.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: October 9, 2018
    Assignee: TAMURA CORPORATION
    Inventors: Kensuke Maeno, Masashi Yamada
  • HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
    Publication number: 20180254355
    Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
    Type: Application
    Filed: March 9, 2016
    Publication date: September 6, 2018
    Applicants: TAMURA CORPORATION, National Institute of Information and Communications Technology, National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Kohei SASAKI, Ken GOTO, Masataka HIGASHIWAKI, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
  • Soldering flux and solder paste composition
    Patent number: 10035222
    Abstract: A soldering flux includes a base resin, an activator, and a solvent. The activator contains an acrylic resin having an acid value of not more than 50 mg KOH/g and represented by a general formula (1). A monomer weight ratio of a, b, and c is b/(a+b+c)?0.6, at least one of a and c may be 0, R1 is an alkyl group having a carbon number of 8 to 24, R2 is a substituent other than the R1 and may be one of substituents including a hydrogen atom, a methyl group, an alkyl group, an aryl group, and a hydroxyl group or a combination of a plurality of substituents, and R3, R4, and R5 are hydrogen atoms or methyl groups. The solvent contains a compound having a carboxyl group in a cyclohexyl skeleton and represented by a general formula (2).
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: July 31, 2018
    Assignee: TAMURA CORPORATION
    Inventors: Masahiro Tsuchiya, Akira Kitamura, Momoko Seino, Masaya Arai
  • Reactor and manufacturing method thereof
    Patent number: 10026548
    Abstract: First and second divisional cores each including right and left leg portions and a yoke interconnecting those together are formed by molding respective yoke-side core members in a resin. Cylindrical core mounting portions extending from the outer circumference of the surface of the yoke-side core member are formed integrally with the respective right and left leg portions of the first divisional core. I-shaped leg-portion-side core members and spacers are attached in the cylindrical core mounting portion formed in each of the right and left leg portions. The surface of the yoke-side core member molded in the resin and the surface of the leg-portion-side core member are disposed so as to have a spacer therebetween. The two divisional cores are joined together by butting respective leg portions of the two divisional cores with each other to form an annular mold core, and a coil is wound around the mold core.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: July 17, 2018
    Assignee: TAMURA CORPORATION
    Inventors: Kotaro Suzuki, Kensuke Maeno, Ryo Nakatsu