Abstract: A semiconductor structure includes a substrate and a plurality of word lines located on a top surface of the substrate. Each of the word lines extends in a direction perpendicular to the top surface of the substrate. The plurality of word lines are arranged at intervals along a first direction. Any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction. The first direction is a direction parallel to the top surface of the substrate.

Abstract: A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes: a plurality of first semiconductor pillars, a plurality of second semiconductor pillars, a first support layer, and a storage structure. The plurality of first semiconductor pillars are arranged in an array in a first direction and in a second direction. Each of the first direction and the second direction is perpendicular to an extending direction of each first semiconductor pillar, and the first direction intersects with the second direction. The first support layer covers sidewalls of top portions of the plurality of first semiconductor pillars. Each second semiconductor pillar is arranged on a respective one of the plurality of first semiconductor pillars. The storage structure is arranged around at least sidewalls of the plurality of first semiconductor pillars and sidewalls of the plurality of second semiconductor pillars.

Abstract: A semiconductor structure, a method for manufacturing the same and a memory are provided. The semiconductor structure includes a substrate, multiple semiconductor pillars, memory structures, and multiple transistors. The multiple semiconductor pillars are arrayed along a first direction and a second direction. Each semiconductor pillar includes a first portion and a second portion on the first portion. The memory structure includes a first electrode layer, a dielectric layer and a second electrode layer. The first electrode layers cover sidewalls of the first portions and are located in first filling regions arranged at intervals. Each first filling region surrounds a sidewall of the first portion. The dielectric layers cover at least surfaces of the first electrode layers. The second electrode layers cover surfaces of the dielectric layers. Channel structures of the transistors are located in the second portions, and extend in a same direction as the second portions.

Abstract: A moving member of a machine can include a cold plate that serves as a primary structural member for the moving member. The cold plate can have one or more cooling channels formed within the cold plate. A plurality of armature windings can be fixed to the cold plate. One or more field windings can be fixed to the cold plate. A plurality of ferromagnetic cores can be fixed to the cold plate, each ferromagnetic core positioned within a loop of at least one of the plurality of armature windings. Other embodiments are described.

Abstract: An enable control circuit, which includes a counter circuit configured to count a current clock cycle and determine a clock cycle count value; a selection circuit configured to determine a clock cycle count target value according to a first setting signal; and a control circuit configured to control an ODT path to be enabled and start the counter circuit when the voltage level of an ODT pin signal is flipped over, control the ODT path to be switched from being enabled to disabled when the clock cycle count value reaches the clock cycle count target value and the voltage level of the ODT pin signal is not changed, and control the ODT path continue to be enabled when the clock cycle count value reaches the clock cycle count target value and the voltage level of the ODT pin signal flips again.

Abstract: A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes: a source and a drain which are arranged in a substrate; a gate dielectric layer arranged in the substrate and covering a sidewall and a bottom portion of a trench defined between the source and the drain; a gate structure arranged in the trench, in which a material of the gate structure includes metal or metal compound; and a gate adjustment layer at least arranged between the gate dielectric layer and the gate structure. A sidewall of the gate structure is provided with a first control area covered with the gate adjustment layer, and a bottom surface of the gate structure is provided with a second control area not covered with the gate adjustment layer. A material of the gate adjustment layer includes polycrystalline silicon.

Abstract: A semiconductor structure includes: a substrate, a first gate structure, and a second gate structure. The substrate includes: discrete first semiconductor pillars arranged at a top of the substrate and extending in a vertical direction; and a second semiconductor pillar and a third semiconductor pillar extending in the vertical direction, the second and third semiconductor pillars are provided at a top of each first semiconductor pillar. The first gate structure is arranged in a middle region of the first semiconductor pillar and surrounds the first semiconductor pillar. The second gate structure is arranged in a middle region of the second semiconductor pillar and of the third semiconductor pillar, and includes a first ring structure and a second ring structure. The first ring structure surrounds the second semiconductor pillar, and the second ring structure surrounds the third semiconductor pillar.

Abstract: A semiconductor structure includes a substrate, a gate structure, a cover layer and a first sacrificial structure. The substrate includes discrete semiconductor channels arranged at a top of the substrate. The gate structure is disposed in a middle region of a semiconductor channel, and includes a ring structure and a bridge structure. The ring structure encircles the semiconductor channel, and the bridge structure penetrates through the semiconductor channel and extends to an inner wall of the ring structure along a penetrating direction. The cover layer is located between adjacent semiconductor channels, and includes a first communication hole. The first sacrificial structure is located on the cover layer, and includes a second communication hole. An inner sidewall of the second communication hole has an irregular shape.

Abstract: A semiconductor test structure includes a field-effect transistor and a metal connection structure. The field-effect transistor includes a substrate with first doping type, a gate located on a surface of the substrate, and a source region with a second doping type and a drain region with the second doping type in the substrate, the source region and the drain region are located on two sides of the gate, respectively. The metal connection structure is connected with the gate; the metal connection structure forms a Schottky contact with the substrate.

Abstract: A semiconductor structure includes a base in which a first doped region is provided and an active pillar group arranged in the first doped region. The active pillar group includes four active pillars arranged in an array. At least one of the active pillars is provided with a notch, which faces at least one of a row centerline or a column centerline of the active pillar group.

Abstract: Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate including a plurality of active pillars arranged at intervals; etching the active pillar to form an annular groove, in which the annular groove does not expose a top surface and a bottom surface of the active pillar; and forming a first semiconductor layer in the annular groove to form the semiconductor structure; in which a band gap of the first semiconductor layer is smaller than a band gap of the active pillar.

Abstract: A compilation method includes the following: receiving a signal to be compiled and a resistance matching signal; performing compilation processing on the signal to be compiled to obtain a compilation result signal; and in the case where the signal to be compiled is a reserved code, performing compatibility selection processing on the compilation result signal according to the resistance matching signal to determine a first compiled value.

Abstract: A layout structure of an anti-fuse array at least includes an array circuit area and a functional circuit area. The array circuit area is electrically connected with the functional circuit area. The functional circuit area is located on at least one side of the array circuit area, and at least one side of the array circuit area is located on an edge of the layout structure. The array circuit area includes an anti-fuse array composed of anti-fuse cells, and the array circuit area is configured to provide the anti-fuse cells under different column addresses to the functional circuit area. The functional circuit area is configured to fuse the anti-fuse cells under the different column addresses.

Abstract: A test method and a test system are provided. The method includes that: first initial data is written into the storage module; ECC module encodes and generates first check data corresponding to first initial data based on first initial data, and writes first check data into the storage module; second initial data is written into a same address of the storage module; second initial data and first check data in the storage module are read. ECC module encodes and generates second check data corresponding to second initial data based on second initial data, and checks and corrects second initial data based on the first check data and the second check data; first read data of the memory is read, and whether a function of ECC module is abnormal is determined based on the first read data, the first read data is checked and corrected second initial data.

Abstract: A method of manufacturing a semiconductor structure includes: providing a base and a dielectric layer on the base, the base in an array region being provided with discrete capacitive contact plugs and a first conductive layer being formed on a top surface of the capacitive contact plugs; sequentially forming a conversion layer and a target layer on the first conductive layer and the dielectric layer, the target layer in the array region and the first circuit region being provided with first openings through the target layer; patterning the target layer in the array region as well as in the first circuit region and the second circuit region to form a second opening and a third opening; etching the conversion layer to form a first trench; forming a filling layer filling the first trench and removing the conversion layer to form a second trench filled by a second conductive layer.

Abstract: A staggering signal generation circuit includes a pulse generation circuit, a counting circuit and a signal generation circuit. The pulse generation circuit generates a first periodic pulse signal and a second periodic pulse signal; the counting circuit counts the first periodic pulse signal and the second periodic pulse signal to generate rising edge triggering signals and falling edge triggering signals; and the signal generation circuit generate a staggering pulse signal according to the input rising edge triggering signals and the input falling edge triggering signals.

Abstract: Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, a first isolation trench located in the substrate, a first insulating layer covering a bottom surface and a lower part of a sidewall of the first isolation trench, a second insulating layer covering an upper part of the sidewall of the first isolation trench, and a third insulating layer at least partially located between the first insulating layer and the second insulating layer to isolate the first insulating layer from the second insulating layer.

Abstract: A method for manufacturing a semiconductor structure includes the following operations. A base and a dielectric layer arranged on the base are provided. A first conductive pillar, a second conductive pillar and a third conductive pillar arranged in the dielectric layer are formed. A mask layer is formed. A portion of a thickness of the third conductive pillar is etched by using the third mask layer as a mask to form a third lower conductive pillar and a third upper conductive pillar stacked on one another, in which the third upper conductive pillar, the third lower conductive pillar and the dielectric layer are configured to form at least one groove. A cover layer filling the at least one groove is formed, in which the cover layer exposes the top surface of the third upper conductive pillar.

Abstract: Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns are formed on the first sacrificial layer through a self-aligned process; a doping process is performed, which includes the operation that a region of the first sacrificial layer exposed from gaps between the second hard mask patterns is doped; the second hard mask patterns are removed; and an undoped region of the first sacrificial layer is removed through a selective etching process so as to form first sacrificial patterns.

Abstract: A compilation method includes: receiving a signal to be compiled and a working frequency signal; performing compilation processing on the signal to be compiled to obtain a compilation result signal; and if the signal to be compiled is a reserved code, performing compatibility selection processing on the compilation result signal based on the working frequency signal to determine a first compilation value.