Abstract: A first sensor detects whether an object is within a first region that surrounds the first sensor. A second sensor detects whether the object is within a second region that surrounds the second sensor. The first and second sensors are omnidirectional capacitive electrodes. In response to the first sensor detecting that the object is not within the first region, a device determines that the object is not proximate to a particular side of the first and second sensors. In response to the first sensor detecting that the object is within the first region, and the second sensor detecting that the object is within the second region, the device determines that the object is not proximate to the particular side. In response to the first sensor detecting that the object is within the first region, yet the second sensor detecting that the object is not within the second region, the device determines that the object is proximate to the particular side.

Abstract: An electronic device for a lighting system, comprising a TRIAC dimmer configured to receive a mains supply voltage and provide a phase cut voltage to the electronic device and having a control loop configured to control a duty cycle of a switched voltage converter that receives the rectified input voltage and provides drive current to a light emitting semiconductor device. The control loop has an error amplifier that is coupled to receive a sense voltage that is indicative of a current through the light emitting semiconductor device, the error amplifier is configured to provide a feedback signal to a pulse width modulation logic configured to control the duty cycle of the switched voltage converter to provide a constant drive current to the light emitting semiconductor device in response to the sense voltage, the error amplifier being coupled to receive a reference voltage that is a function of the input voltage.

Abstract: An electronic device, a fiber-optic communication system comprising the electronic device and a method of operating the electronic device are provided. The electronic device comprises a transimpedance-type amplifier having a transimpedance stage comprising an amplifier which is coupled in series with an input node. A feedback resistor is coupled in series between an output node of the amplifier and an inverting input node of the amplifier to provide a virtual ground node which is coupled to the input node, the inverting input node of the amplifier and to the feedback resistor. A current source is coupled to the virtual ground node so as to compensate for an offset current in an input signal which is coupled to the input node of the electronic device. Further, the electronic device comprises a control stage which is configured to control the current source as a function of a current through the feedback transistor.

Abstract: An average current mode buck-boost DC to DC converter has a buck stage coupled between an input voltage source terminal and an output terminal. A boost stage is coupled between the input voltage source terminal and the output terminal. A current ramp control circuit generates a ramp signal for driving the buck and boost stages, the ramp signals being coupled to the buck and boost stages. A constant voltage related to the desired output voltage by a constant is applied directly to both a voltage control feedback loop for adjusting the output voltage and directly to an input to the current ramp control circuit, whereby the output voltage can be shifted from one voltage to another by feedforward control.

Abstract: Some aspects of the disclosure are directed to a transmission circuit that includes a main driver. The transmission circuit also includes a plurality of capacitive modules connected in parallel to the main driver. A controller also is included that is coupled to the plurality of capacitive modules. The controller selectively enables and disables each capacitive module to implement a target amount of pre-emphasis.

Abstract: A DC-DC converter includes a current control stage configured to provide a threshold based on an output voltage, an input voltage, and a reference voltage for the DC-DC converter. An off time control can be configured to receive the threshold and control an off time for the DC-DC converter based on the threshold such that the off time is inversely proportional to the peak current generated by the DC-DC converter.

Abstract: Electronic device comprising an electronic circuit and an ESD protection circuit is provided. The ESD protection circuit comprises a first and a second protection stage, wherein the second protection stage comprises at least one high side CMOS-transistor and a low side CMOS-transistor acting as power dissipating rail clamps. The at least one high side CMOS-transistor and the low side CMOS-transistor are coupled so as to provide an anti-series connection of Zener diodes between a node of the electronic device and a supply voltage rail. Further, the high side CMOS-transistors and the low side CMOS-transistor are complementary CMOS-transistors.

Abstract: The invention relates to an electronic device and a method for DC-DC-conversion. The electronic device includes energizing switch and a commutating switch coupled at a switching node. The switching node is configured to be coupled to an inductor. The electronic device is configured to repeatedly suspend the regular synchronous switching of the commutating switch during a load detection period, to sense the voltage at the output node during the load detection period and to determine a high-load condition or a light-load condition of the DC-DC-conversion based on the sensed voltage at the output node.

Abstract: A apparatus is provided for buffering data between a memory controller and a DRAM. The apparatus includes a phase locked loop (PLL), a phase interpolator for aligning a phase of an output clock signal in response to a phase aligning control word, and a non-volatile storage location permanently storing the phase aligning control word. The phase aligning control word is determined through an initial training procedure of the device under predetermined training conditions of at least a supply voltage level and a temperature, and the predetermined training conditions are set so as to optimize the phase alignment of an edge of the output clock signal with respect to the buffered data signal.

Abstract: An integrated circuit contains three thin film resistors over a dielectric layer. The first resistor body includes only a bottom thin film layer and the first resistor heads include the bottom thin film layer, a middle thin film layer and a top thin film layer. The second resistor body and heads include all three thin film layers. The third resistor body does not include the middle thin film layer. The three resistors are formed using two etch masks.

Abstract: An electronic device for switched DC-DC conversion of an input voltage level into an output voltage level, comprising a first power switch and a second power switch, being connected in parallel and having a different gate width, and a driving stage that is configured to selectively drive the first power switch and/or second power switch depending on a load current output.

Abstract: An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.

Abstract: Improved current sensing methods and apparatus and conductor apparatus are presented for sensing current in a bus bar or other conductor using one or more circular magnetic sensors or multiple magnetic sensors disposed on a substrate in a pattern surrounding a longitudinal path within the outer periphery of the conductor to avoid or mitigate sensed magnetic field crosstalk and to facilitate use of high sensitivity magnetic sensors at locations inside the conductor periphery in which the magnetic field is relatively small.

Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: The invention generally relates to phase locked loops (PLL), and more specifically to ultra-low bandwidth phase locked loops. The invention may be for example embodied in an integrated circuit implementing a phase locked loop or a method for operating a phase locked loop. The invention provides a PLL with a control stage that uses only two storage cells, a counter and a digital-to-analog (DAC) converter. In comparison to prior-art PLLs using storage cells the configuration of the invention's control stage reduces the chip area required for the PLL reduced. The invention further suggests PVT compensation mechanisms for a PLL and implementing a PLL that has lower peaking in its frequency response, which results in better settling response.

Abstract: An electronic device for encrypting and decrypting data blocks of a message having n data blocks in accordance with the data encryption standard (DES) has a first data processing channel having a first processing stage for performing encryption and decryption of data blocks of a predefined length, and a second data processing channel having a second processing stage for performing encryption and decryption of data blocks. The electronic device also has a control stage (FSM) for controlling the first processing stage and the second processing stage, so as to perform an encryption or decryption step with the second processing stage on an encrypted/decrypted data block output from the first processing stage, and to control the second processing stage to compute a message authentication code over the encrypted or decrypted message received from the first processing stage block-by-block.

Abstract: The present disclosure relates to an Apparatus comprising at least one resistive voltage divider and at least two inverters, wherein the resistive voltage divider is coupled between a first supply potential terminal (VDD) and a second supply potential terminal (VSS), wherein the voltage divider comprises a first resistor, a second resistor, a third resistor and a fourth resistor being serially connected, and wherein a first connection point of the second resistor and the third resistor is connected to an voltage input, and a second connection point of the first resistor and the second resistor is connected to the input side of a first inverter, and a third connection point of the third resistor and the fourth resistor is connected to the input side of a second inverter, wherein the first inverter and the second inverter are configured to provide a first output voltage if a first voltage is applied to the voltage input, and the first inverter and the second inverter are configured to provide a second output vo

Abstract: An electronic device, a fiber-optic communication system comprising the electronic device and a method of operating the electronic device are provided. The electronic device comprises a transimpedance-type amplifier having a transimpedance stage comprising an amplifier which is coupled in series with an input node. A feedback resistor is coupled in series between an output node of the amplifier and an inverting input node of the amplifier to provide a virtual ground node which is coupled to the input node, the inverting input node of the amplifier and to the feedback resistor. A current source is coupled to the virtual ground node so as to compensate for an offset current in an input signal which is coupled to the input node of the electronic device. Further, the electronic device comprises a control stage which is configured to control the current source as a function of a current through the feedback transistor.

Abstract: An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.

Abstract: The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.