Abstract: A circuit for receiving digital signals over a transmission line. A feedback circuit is coupled to an input node of the transmission line and adjusts the input impedance of the receiver circuit to match the characteristic impedance of the transmission line. The feedback circuit includes a first current source controlled by a first voltage and having a first transconductance, and a second current source controlled by the first voltage and having a second transconductance equal to the first transconductance times a first scaling factor. The feedback circuit includes a first resistance element having a resistance equal to the first scaling factor plus one, times the characteristic impedance of the transmission line, and is coupled between the outputs of the first and second current sources.

Abstract: A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material.

Abstract: The present disclosure provides a receiver, a transmitter and methods of operating a receiver and a transmitter. In one embodiment, the receiver includes a receive portion employing transmission signals from a transmitter, having multiple transmit antennas, that is capable of transmitting at least one spatial codeword and adapting a transmission rank. The receiver also includes a feedback generator portion configured to provide a channel quality indicator that is feedback to the transmitter, wherein the channel quality indicator corresponds to at least one transmission rank.

Abstract: Various apparatuses and methods for supplying an electrical current are disclosed herein. For example, some embodiments provide an apparatus including a current regulation switch connected in a current path between a power input and a current output. A current regulator is connected to the current regulation switch. The current regulator includes a current set terminal, and the current through the current regulation switch is proportional to the current through current set terminal. An impedance monitor is connected to the current set terminal.

Abstract: The present invention relates to apparatus and method for re-circulating high viscosity liquids. The apparatus comprises a recirculating probe coupled to a fluid storage and dispensing vessel by a connector, and the recirculating probe comprises: (a) a dip tube defining an output flow path; (b) an output port; (c) a recirculating port; and (d) a return flow path. The output flow path and the return flow path preferably have substantially equal cross-sectional areas, which reduce or eliminate the unbalance between the discharge pressure in the output line and that in the re-circulation line, and prevent premature wearing-out of the dispensing/recirculating pump.

Abstract: Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.

Abstract: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.

Abstract: A plurality of sub word lines each have a length equivalent to the division of a main word line along the extension direction thereof, arranged along a bit line crossing said main word line, and are connected with a plurality of memory cells. A first sub word select line arranged in parallel to the main word line is extended to a plurality of sub arrays arranged in the extension direction of the word line. A second sub word select line is connected to the corresponding one of said first sub word select line to be extended orthogonally to a word line driving circuit area of an adjacent sub array. In the sub word line driving circuit provided for each sub array, a sub word line is selected and deselected by signals supplied from said main word line and said second sub word select line.

Abstract: In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and is maintained for a predetermined period. The pre-deposition temperature is changed to a deposition temperature, wherein a temperature of the bottom region is lower than a temperature of the top region.

Abstract: Systems and methods for synchronous rectifier control are provided. A synchronous rectifier includes parasitic drain inductance and parasitic source inductance. Compensation inductance is introduced to offset the effects of parasitic inductance. Compensation inductance may be formed from the trace inductance on the semiconductor die. In certain semiconductor packages, the parasitic inductance may be substantially fixed such that the layout can be modified to generate fixed compensation inductance.

Abstract: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.

Abstract: A method and semiconductor device for forming a uniformly thin dielectric layer on graphene. A metal or semiconductor layer is deposited on graphene which is located on the surface of a dielectric layer or on the surface of a substrate. The metal or semiconductor layer may act as a nucleation layer for graphene. The metal or semiconductor layer may be subjected to an oxidation process. A thin dielectric layer may then be formed on the graphene layer after the metal or semiconductor layer is oxidized. As a result of synthesizing a metal-oxide layer on graphene, which acts as a nucleation layer for the gate dielectric and buffer to graphene, a uniformly thin dielectric layer may be established on graphene without affecting the underlying characteristics of graphene.

Abstract: A circuit and method of determining the power output for a converter circuit includes determining a time averaged voltage from a rectified voltage of a winding of the transformer and multiplying the time averaged voltage by a constant determined at least in part by an average current of a winding of the transformer. By one approach, a rectified voltage from a primary side of the transformer is time averaged using a filter circuit. The current can be known or preset or controlled by the converter circuit such that the time averaged voltage reading, assuming a constant current, can be compared to a preset voltage such that the voltage reading approximates a power reading for the transformer. By another approach, the time averaged voltage is multiplied by the current to obtain a power output reading.

Abstract: A signal processing circuit is configured to calculate a gain ratio to efficiently reduce a peak to average signal ratio for an input signal by identifying signal peaks and determining the signal peak magnitudes. A window function in combination with the gain ratio is applied to a portion of the input stream having a peak signal to create a cancellation pulse to be applied to that peak signal. The cancellation pulse phase is aligned with the signal phase, thereby causing minimal phase distortion in the resultant output signal and accurate peak cancellation. The cancellation pulse can also include a finite impulse response filter portion to efficiently handle wide bandwidth signals. The hardware may be configured to process multiple signal streams in parallel to reduce hardware requirements. An algorithm can determine the effect of multiple corrections to the input stream to avoid overcorrection in the signal processing process.

Abstract: A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.

Abstract: An audience and speaker interactive communications system is described. In one embodiment, it includes a server coupled to a loudspeaker, which server includes an application module for receiving and decoding speech samples and transmitting the speech samples to a loudspeaker over an unlicensed wireless communication frequency spectrum. The system also includes a mobile communications device with a connectivity application for gaining access to the server over an unlicensed wireless communication frequency spectrum as well as a client application module for encoding and transmitting speech samples to the server.

Abstract: An integrated circuit (200) includes one of more transistors (210) on or in a substrate (10) having semiconductor surface layer, the surface layer having a top surface. At least one of the transistors are drain extended metal-oxide-semiconductor (DEMOS) transistor (210). The DEMOS transistor includes a drift region (14) in the surface layer having a first dopant type, a field dielectric (23) in or on a portion of said surface layer, and a body region of a second dopant type (16) within the drift region (14). The body region (16) has a body wall extending from the top surface of the surface layer downwards along at least a portion of a dielectric wall of an adjacent field dielectric region. A gate dielectric (21) is on at least a portion of the body wall. An electrically conductive gate electrode (22) is on the gate dielectric (21) on the body wall.

Abstract: A method of method of manufacturing an integrated circuit. The method comprises performing an electromigration reliability rule-check for at least one of via node of an integrated circuit, including: calculating a net effective current density of the via node. Calculating the net effective current density including determining a sum of effective current densities for individual leads that are coupled to the via node. Leads configured to transfer electrons away from said via node are assigned a positive polarity of the effective current density. Leads configured to transfer electrons towards the via node are assigned a negative polarity of the effective current density.

Abstract: A method of manufacturing a semiconductor device. The method comprises forming conductive and ferroelectric material layers on a semiconductor substrate. The material layers are patterned to form electrodes and a ferroelectric layer of a ferroelectric capacitor, wherein a conductive residue is generated on sidewalls of the ferroelectric capacitor as a by-product of the patterning. The method also comprises removing the conductive residue using a physical plasma etch clean-up process that includes maintaining a substrate temperature that is greater than about 60° C.

Abstract: The present disclosure provides a seven transistor static random access memory (7T SRAM) cell. In one embodiment, the 7T SRAM cell includes a pair of cross-coupled inverters configured to provide a memory element having first and second storage nodes. The 7T SRAM cell also includes a Read isolation transistor having a control element connected to one of the storage nodes of the cross-coupled transistor inverters and configured to provide a buffered Read output. The 7T SRAM cell further includes a Read pass gate transistor controlled by a Read word line and connected between the Read isolation transistor and a read bit line. Additionally, the 7T SRAM cell still further includes a Write pass gate transistor controlled by a Write word line and connected between one of the storage nodes of the cross-coupled inverters and a Write bit line to write either state of the memory element.