Abstract: A method of powerline communications (PLC) includes compiling a data frame for physical layer (PHY) by a first communications device at a first communications node on a powerline of a PLC network. The data frame includes a single tone PHY header portion and a data payload portion in a set of tones including at least one tone having a frequency different from a frequency of the single tone. The PHY header portion includes tone mask identification information identifying the set of tones. The first communications device transmits the data frame over the powerline to a second communications device at a second communications node on the powerline. The second communications device receives the data frame, and decodes the data payload using the tone mask identification information in the PHY header portion.

Abstract: A decoder provided according to an aspect of the present invention determines a type of each network abstraction layer (NAL) unit, and discards a NAL unit when the size of the NAL unit is inconsistent with the size according to the determined type. According to another aspect, a decoder corrects for errors in the non-pay load portions and uses the corrected non-pay load portions to recover the original data contained in the payload portions of the data stream. In an embodiment, various global parameters (which are applicable to the data stream unless changed further in the data stream) and the values in the slice headers are examined to correct the parameters in the slice headers. According to one more aspect, an end of frame is reliably detected by using an expected number of macro-blocks in a frame and a set of logical conditions of slice header parameters.

Abstract: An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

Abstract: An electronic circuit includes a receiver circuit (BSP) operable to perform coherent summations having a coherent summations time interval, and a power control circuit (2130) coupled to said receiver circuit (BSP) and operable to impress a power controlling duty cycle (TON, TOFF) on the receiver circuit (BSP) inside the coherent summations time interval. Other circuits, devices, systems, methods of operation and processes of manufacture are also disclosed.

Abstract: A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector.

Abstract: IEEE 1149.1 Test Access Ports (TAPs) may be utilized at both IC and intellectual property core design levels. TAPs serve as serial communication ports for accessing a variety of embedded circuitry within ICs and cores including; IEEE 1149.1 boundary scan circuitry, built in test circuitry, internal scan circuitry, IEEE 1149.4 mixed signal test circuitry, IEEE P5001 in-circuit emulation circuitry, and IEEE P1532 in-system programming circuitry. Selectable access to TAPs within ICs is desirable since in many instances being able to access only the desired TAP(s) leads to improvements in the way testing, emulation, and programming may be performed within an IC. A TAP linking module is described that allows TAPs embedded within an IC to be selectively accessed using 1149.1 instruction scan operations.

Abstract: The present invention describes circuitry and a method of providing a low power WRITE mode of operation for an integrated circuit comprising an SRAM memory to provide a reduced IDDQ relative to the IDDQ of a full active mode. In one aspect, the circuitry includes an SRAM memory array, mode control circuitry coupled to the array and configured to alter a supply voltage level to the SRAM array based on a mode of operation. The circuitry also includes control inputs coupled to the mode control circuitry for selecting one of the low power write mode, the full active mode, and optionally a retention mode of operation. The mode control circuitry is configured to receive the control inputs to select one of the three modes of operation, and to alter one or more supply voltage levels to the array, for example, the Vss supply voltage using a Vss supply circuit and the Vdd supply voltage using a Vdd supply circuit, based on the selected mode of operation.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: A method for forming a hydrogen barrier layer that overlies ferroelectric capacitors and a buffer region but is removed from a portion of the logic region.

Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.

Abstract: A method for providing common-mode feedback is provided. A common-mode current is applied to a common-gate amplifier, and the common-mode current is sensed. In response to the sensed common-mode current, a control voltage is generated. A first feedback current (which is generated in response to the control voltage) can then be applied to differential ground of the common-gate amplifier if the common-mode current is less than a predetermined threshold. Additionally, a second feedback current (which is generated in response to the control voltage) can be applied to input terminals of the common-gate amplifier if the common-mode current is greater than the predetermined threshold.

Abstract: Accelerometers have a number of wide-ranging uses, and it is desirable to both increase their accuracy while decreasing size. Here, millimeter or sub-millimeter wavelength accelerometers are provided which has the advantage of having the high accuracy of an optical accelerometer, while being compact. Additionally, because millimeter or sub-millimeter wavelength signals are employed, cumbersome and awkward on-chip optical devices and bulky optical mediums can be avoided.

Abstract: An apparatus comprising: a first control switch driven by a first bit value; a first weighted switch driven by a first clock signal; a first intermediate node coupled between the first control switch and the second weighted switch; a first precharge transistor coupled to the first intermediate node, wherein the precharge transistor is driven by an inverse of the clock signal; a second control switch driven by an inverse of the bit; a second weighted switch driven by a second clock signal; a second intermediate node coupled between the second control switch and the second weighted switch; a second precharge transistor coupled to the second intermediate node, wherein the second precharge transistor is driven by an inverse of the second clock signal; and a capacitor coupled to the first control switch, the second control switch, the first precharge transistor and the second precharge transistor.

Abstract: An integrated circuit (70) having parallel scan paths (824-842, 924-942) includes a pair or pairs of scan distributor (800,900) and scan collector (844,944) circuits. The scan paths apply stimulus test data to functional circuits (702) on the integrated circuit and receive response test data from the functional circuits. A scan distributor circuit (800) receives serial test data from a peripheral bond pad (802) and distributes it to each parallel scan path. A scan collector circuit (844) collects test data from the parallel scan paths and applies it to a peripheral bond pad (866). This enables more parallel scan paths of shorter length to connect to the functional circuits. The scan distributor and collector circuits can be respectively connected in series to provide parallel connections to more parallel scan paths. Additionally multiplexer circuits (886,890) can selectively connect pairs of scan distributor and collector circuits together.

Abstract: A process of selecting alternative test circuitry within an integrated circuit enables a test access port. Scan test instruction data is loaded into an instruction register of a test access port TAP, the instruction data including information for selecting the alternative test circuitry. An Update-IR instruction update operation is performed at the end of the loading to output scan test control signals from the instruction register. A lockout signal is changed to an active state to disable the test access port and enable scan test circuits.

Abstract: A circuit for generating a band gap reference voltage (VREF) includes circuitry (I3×7) for supplying a first current to a first conductor (NODE1) and a second current to a second conductor (NODE2). The first conductor is successively coupled to a plurality of diodes (Q0×16), respectively, in response to a digital signal (CTL-VBE) to cause the first current to successively flow into selected diodes. The second conductor is coupled to collectors of the diodes which are not presently coupled to the first conductor. The diodes are successively coupled to the first conductor so that the first current causes the diodes, respectively, to produce relatively large VBE voltages on the first conductor and the second current causes sets of the diodes not coupled to the first conductor to produce relatively small VBE voltages on the second conductor. The relatively large and small VBE voltages provide differential band gap charges (QCA-QCB) which are averaged to provide a stable band gap reference voltage (VREF).

Abstract: An optical disk drive system associated with a laser diode is described. The optical disk drive system comprises a current generator for receiving input signals; a current switch coupled to receive timing signals; a current driver coupled to receive output signals from the current switch and the current generator, the current driver further comprising a driver with wave shape control selected from the group consisting of a laser diode read driver and a laser diode write driver, wherein the driver with shape control is operative for transmitting at least one output signal that is a scaled version of at least one of the output signals received from the current generator, wherein the current driver is operative for transmitting at least one output signal driving the laser diode.

Abstract: A method, system, and apparatus of a DC current based on chip RF power detection scheme for a power amplifier are disclosed. In one embodiment, a method includes generating a scaled current from an other current associated with power amplifier, transforming the scaled current (e.g., the scaled current may be scaled to the other current value) into a digital signal and using the digital signal to set a radio frequency power value of an antenna of the antenna module. The method may include transforming the scaled current into a voltage signal. The method may also include transforming the voltage signal into the digital signal. The method may also include generating a current mirror from a low dropout regulator.

Abstract: Data is communicated through two separate circuits or circuit groups, each having clock and mode inputs, by sequentially reversing the role of the clock and mode inputs. The data communication circuits have data inputs, data outputs, a clock input for timing or synchronizing the data input and/or output communication, and a mode input for controlling the data input and/or output communication. A clock/mode signal connects to the clock input of one circuit and to the mode input of the other circuit. A mode/clock signal connects to the mode input of the one circuit and to the clock input of the other circuit. The role of the mode and clock signals on the mode/clock and clock/mode signals, or their reversal, selects one or the other of the data communication circuits.

Abstract: One-time programmable (OTP) Electronically Programmable Read-Only Memories (EPROMs) have been used in a number of applications for many years. One drawback with these OTP EPROMs is that these nonvolatile memories tend to be slow and/or may use a considerable amount of area. Here, however, a bit cell is provided that employs a compact dual cell, which generally includes two OTP cells. These OTP cells are generally arranged in differential configuration to increase speed and are arranged to have a small impact on area.