Abstract: Polycrystalline silicon resistor elements are formed in MOS integrated circuits by a method which requires no additional mask and etch steps other than a standard double-level poly process. The resistors are defined in first level polysilicon which also forms floating gates in FAMOS devices. The resistors are masked by the second level poly which is patterned to define control gates for the FAMOS cells at the same time as the resistor mask is created. The first level poly is implanted at a level which produces the desired resistivity, which is same as the necessary doping level for the floating gates. FAMOS cells are floating gate MOS transistors which are electrically programmable and may also be electrically erasable or electrically alterable.

Abstract: For a distance measuring system in which a light measuring arrangement responds to changes in light to establish distances, a processing circuit includes a quasi-compression device that receives the electrical signal from the light measuring arrangement and maintains the normal gain of an amplifier to amplify the electrical signal when the electrical signal is low. The compression device reduces the amplifier gain when the electrical signal is higher. This narrows the dynamic range necessary for the distance measuring system.

Abstract: A charge coupled device is disclosed which includes a plurality of stages having increased charge storage capacity and decreased leakage current. Each stage is comprised of a semiconductor substrate of a first-type conductivity having a first surface. An insulating layer of uniform thickness lies on the first surface. A charge transfer channel extends through each stage. Phase electrodes lie on the insulating layer transversely to the channel. The semiconductor substrate under each phase electrode is divided into a barrier region and an adjacent well region bounded by the channel. A shallow dopant layer of the first-type conductivity lies in each of the barrier regions relatively near to the first surface. A buried channel dopant layer of a second-type conductivity lies in the well regions and the barrier regions under and relatively near to the shallow first-type conductivity dopant layer.

Abstract: A time delay relay has a switch assembly, a spring terminal assembly, and an electrical resistance heater unit of an inexpensive construction held together in a reliable and economical manner by a pair of easily mounted metal spring clips.

Abstract: A static push-pull driver circuit employs an enhancement mode input transistor and two parallel load transistors, with an input logic voltage on the gate of the input transistor and its complement on the gates of the load transistors. One load transistor is a depletion mode and the other a "low-threshold" device; the threshold voltage of the low-threshold transistor is much less than that of the enhancement mode input transistor.

Abstract: A storage device for storing photographic exposure information employs a closed-loop analog-to-digital (A-D) converter circuit includes a counter and a digital-to-analog (D-A) converter. The influence of erroneous signals which are created at the output of the D-A converter when the exposure information is stored in the counter is eliminated. The D-A converter circuit employs a ladder network of coarse accuracy. The stored exposure value, however, is highly accurate because of the closed-loop nature of the A-D converter circuit. Means responsive to the stored value for operating the exposure system of the camera are disclosed.

Abstract: A visual display and method for producing the same. A plurality of electro-optic cells, such as liquid crystal cells, are placed in an optical series. Each of the cells receives approximately simultaneous identical signals. Due to the series relationship, the resulting contrast ratio will be significantly improved. The transmission function acting on the entering light will be squared after the second electro-optic cell, cubed after the third cell, etc. The enhanced transmission function has a vastly improved rise after the threshold voltage allowing for greater multiplexing capability.

Abstract: A matrix array of objects, for example semiconductor bars, is located on a carrier such as an X-Y table and the objects are successively brought into the field of view of a television camera for precise alignment with respect to a reference point. Video signals corresponding to an image of the object and its peripheral area are digitized to produce digitized video signals predominantly of a first level corresponding to surface areas of the object and of a second level corresponding to the peripheral areas. The digitized video signals are analyzed during a plurality of data window sets which are associated with axial directions corresponding to directions of movement of the X-Y table and which correspond to areas of the video image which are in a defined position relative to different edges of the video image of the object when the latter is in an aligned position.

Abstract: A charge coupled device memory is disclosed which includes a plurality of stages having increased charged storage capacity and decreased leakage current. Each stage is comprised of a semiconductor substrate of a first-type conductivity having a first surface. An insulating layer of uniform thickness lies on the first surface. A charge transfer channel extends through each stage. Phase electrodes lie on the insulating layer transversely to the channel. The semiconductor substrate under the phase electrodes is divided into barrier regions and adjacent well regions bounded by the channel. A dopant layer of a second-type conductivity lies in each of the well regions relatively near to the first surface. An enhanced first-type conductivity dopant layer lies in the well regions and the barrier regions relatively far from the surface having a doping which is greater than the doping of the first-type conductivity semiconductor substrate.

Abstract: A circuit and a method of operation thereof are disclosed to compensate for second order non-linearities in bandgap voltage references. The circuit is readily fabricated as an integrated circuit in conjunction with circuitry utilized to correct linear variations. The circuit accurately compensates for the non-linear bow effect over a temperature range of -55.degree. C. to +150.degree. C.

Abstract: A proximity switch in which the electronic characteristics of a liquid crystal display are monitored relative to a reference liquid crystal display to determine when an operator has come into proximity thereto. A controller monitors the display elements, liquid crystal displays, respective capacitances or inductance and when an operator comes into proximity to an electrode in the display element, the controller senses this proximity due to the change in capacitance or inductance of the element. This sensing allows the controller to recognize when a change of state is desired by the operator. The use of the reference element allows the controller to respond only to operator proximity and not to noise caused by changes in the environment, such as temperature.

Abstract: A calculator having constant memory utilizing a classical CMOS metal gate process, a low power microcomputer with on-chip and external constant memory capability. Incorporation of a switched negative voltage and a non-switched negative voltage to the appropriate P (-) wells enables the power hungry clocked logic to be turned off while power is maintained on the internal static RAM, on the digit latches, and on the R-lines which connect to both the internal and external RAM. Thus, semi-non-volatile memory (constant memory) capability may be achieved with a low standby current.

Abstract: An infrared charge transfer device (CTD) imaging system is disclosed which includes an optic system for focusing infrared energy emanating from a scene, a detector matrix for receiving the focused infrared energy and converting it to electrical signals representative of the intensity of the infrared energy, and a video processor for processing the electrical signals into video signals. The detector matrix of the system is a plurality of IR detector cells arranged in rows and columns. Each detector cell includes a substrate of semiconductor material, an integrating electrode, a drain electrode, a transfer electrode and insulating layers. The integrating electrode is centrally disposed with respect to the drain and transfer electrodes with the integrating electrode in a spaced relationship with the drain electrode. The integrating and drain electrodes form first level MIS electrodes on the semiconductor substrate.

Abstract: Disclosed is a frequency converting filter comprised of a charge transfer device transversal filter and a non-sampling filter. The transversal filter has an output lead coupled to an input of the non-sampling filter, and has frequency passbands of width .DELTA.f centered at the fixed frequencies nf.sub.s .+-.f.sub.o. The non-sampling filter has a single passband. The single passband has a width of less than f.sub.s -f.sub.o -.DELTA.f/2 and it is centered to include only a selected one of the passbands of the transversal filter.

Abstract: Disclosed is an area actuated switch which can be used, by way of example, in a keyboard for a calculator, learning aid or the like. An area actuated switch array is formed using two insulating sheets which overlie one another such that one side of each sheet faces one another. Sets of spaced conductors formed on each of the facing sides also overlie one another, and selected ones of said conductors traverse the periphery of the keyboard. A plurality of raised, insulating spacer points are positioned on the facing sides and are in registration and contact with each other. An insulating substrate is formed over the conductors traversing the periphery and this insulating substrate has substantially the same thickness as the spacer points such that the spacer points and the insulating substrate prevent the spaced conductors from making electrical contact. An adhesive coating is applied to the spacer points and the insulating substrate to bond these two parts together.

Abstract: The invention is embodied in a non-volatile metal-insulator-semiconductor having a novel combination of insulating layers including a silicon nitride layer covered by a silicon dioxide layer covered by a high dielectric constant insulator. In one embodiment of the invention the nitride layer is directly upon the semiconductor. In another embodiment the insulator combination also includes a second layer of silicon dioxide located between the nitride layer and the semiconductor. Writing is accomplished by injection of charge into the nitride layer and shifting the threshold voltage of the structure. Erasure is accomplished by forcing the injected charge back into the semiconductor to recombine with majority carriers. The charge can be electrons or holes depending on the semiconductor type. The memory element of the invention has lower write/erase voltages, shorter write/erase times and higher writing efficiency.

Abstract: In a non-volatile random access memory, a selected one of a plurality of magnetic cells arranged in an array on a major surface of a substrate is inductively switched between opposite remanent, i.e. permanent, states upon the simultaneous application of electrical pulses to a pair of conductors intersecting adjacent the selected cell, each of the electrical pulses having an amplitude less than, but the sum thereof being at least equal to, the amplitude required to inductively switch the remanent state of the selected cell.

Abstract: A tone generator for electronic musical instruments, useful in particular for the modular composition of an electronic organ, comprising a plurality of inputs corresponding to a keyboard octave of the musical instrument. The inputs are connected to a plurality of groups of analog modulators which receive, respectively, tone signals produced by a tone generator and submultiples thereof produced by a plurality of toggles according to the number of footages desired on the output of the groups of modulators. The tone generator includes an audio frequency modulator having a high modulation index with full modulation depth remaining substantially constant over the whole supply voltage range.

Abstract: A method for the fabrication of submicron devices, without the use of submicron lithography. Vertical "zero undercut" etching techniques are employed, in order to convert the submicron thickness of a deposited thin film conductor layer and a thin film insulation layer into submicron gate widths that can be used in a wide variety of devices, including MOS field effect devices, for example. The conversion is achieved by depositing a thin film conductor layer of submicron thickness across a vertical step between adjacent insulator surfaces, and then vertically etching until the only remaining portion of the conductor layer is that portion adjacent the vertical step. The remaining insulation not covered by conductor is then removed. Thus, an insulated gate is provided having a submicron width approximately equal to the thickness of the conductor layer as initially deposited.

Abstract: Disclosed is a method and circuit for automatically adjusting the firing angle of a switching element, such as a thyristor or triac, to minimize surge currents produced in reactive loads in AC power applications. A typical application would be in a microwave oven controller when the circuit would be used as an interface between the microwave oven control circuitry and the thyristor driving a magnetron. The circuit is comprised of a digital-control, phase-locked loop oscillator which produces a series of triggering pulses which are synchronized with the AC line voltage; the oscillator oscillates at a known frequency and clocks a counter during one half-cycle of the line voltage, resetting the counter during the opposite half-cycle. A peak fire detection circuit is coupled to the oscillator. An enable signal is generated by the microwave oven control circuitry. Since the oscillator frequency is known, the AC line voltage peak occurs at a known state of the counter.