Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract: A method of power line communications includes obtaining timing information for an AC mains signal transmitted on a power line in a power line communication (PLC) system that includes at least one receiver and at least one other device connected on the power line which provides variable loading during cycles of the AC mains signal. A first loading interval within at least a first cycle of the cycles having lower loading and at least a second loading interval within said first cycle having higher loading are identified using the timing information. At least one data packet is transmitted only during the first loading interval over the power line to the receiver.

Abstract: This invention controls data transmission from a data source to a sink. The data source buffers the data. The data source signaling to transmit data upon storing a burst amount of data. The data source may include a plurality of data sources. A merge unit merges data by receiving and retransmitting data from each data source which signals to transmit and inserting a source identity block each time the merged data is received from a different source.

Abstract: A powered device receives electrical power through a data transmission cable from a power supplying device that monitors a load on the data transmission cable and turns off the power to the load if the load is outside of a range. The powered device draws a first current at least part of a time during which the powered device is in a low power mode. The powered device is operable during the low power mode to draw a second current. And the powered device increases and decreases the second current to maintain a sum of the first current and the second current, or a level of a current into the powered device, at least at a minimum level for at least a portion of a cycle time.

Abstract: An integrated circuit contains a voltage protection structure having a diode isolated DENMOS transistor with a guard element proximate to the diode and the DENMOS transistor. The guard element includes an active area coupled to ground. The diode anode is connected to an I/O pad. The diode cathode is connected to the DENMOS drain. The DENMOS source is grounded. A process of forming the integrated circuit is also disclosed.

Abstract: An electronic device for DC-DC conversion including a feedback loop coupled at one side to the inductor for measuring a current through the inductor with a series of an auxiliary capacitor and an auxiliary resistor, a transconductance stage coupled to the auxiliary capacitor for generating a current proportional to a voltage drop across the auxiliary capacitor, wherein the electronic device further includes a ramp resistor coupled to the output of the transconductance stage for generating a ramp voltage across the ramp resistor and a comparator receiving at a first input the ramp voltage, wherein the output of the comparator is coupled to a gate driving stage for driving a power transistor coupled with a control gate to the gate driving stage and with a channel to a switching node of the electronic device.

Abstract: Systems and methods for regulating a switching converter are disclosed. One embodiment of the present invention relates to a power supply system that includes a switching converter that provides an output voltage by alternately turning on and off a high-side transistor and a low-side transistor both coupled to an output inductor through a switching node. The switching converter includes a drive circuit that regulates the output voltage based on a feedback signal. The power supply system also includes a simulated output generator that generates and provides the drive circuit with a simulated inductor waveform as the feedback signal based on a low-side output waveform of the low-side transistor measured at the switching node during off-times of the switching converter.

Abstract: An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired location. Deposition of the dummy gate polysilicon layer fills the trench with polysilicon; the resistor polysilicon portion is protected from dummy gate polysilicon removal by a hard mask layer. The resistor polysilicon can be doped during source/drain implant, and can have its contact locations silicide-clad without degrading the metal gate electrode.

Abstract: An embedded micro-electro-mechanical system (MEMS) (100) comprising a semiconductor chip (101) embedded in an insulating board (120), the chip having a cavity (102) including a radiation sensor MEMS (105), the opening (104) of the cavity at the chip surface covered by a plate (110) transmissive to the radiation (150) sensed by the MEMS. The plate surface remote from the cavity having a bare central area, to be exposed to the radiation sensed by the MEMS in the cavity, and a peripheral area covered by a metal film (111) touching the plate surface and a layer (112) of adhesive stacked on the metal film.

Abstract: Integrated circuits (ICs) utilize bipolar transistors in electro-static discharge (ESD) protection circuits to shunt discharge currents during ESD events to protect the components in the ICs. Bipolar transistors are subject to non-uniform current crowding across the emitter-base junction during ESD events, which results in less protection for the IC components and degradation of the bipolar transistor. This invention comprises multiple contact islands (126) on the emitter (116) of a bipolar transistor, which act to spread current uniformly across the emitter-base junction. Also included in this invention is segmentation of the emitter diffused region to further improve current uniformity and biasing of the transistor. This invention can be combined with drift region ballasting or back-end ballasting to optimize an ESD protection circuit.

Abstract: In an embodiment of the invention, a method of forming an NMOS (n-type metal-oxide semiconductor) transistor is disclosed. A dual mask pattern is used to ion-implant source/drain regions of the NMOS transistor. The first mask allows first doses of As (arsenic), P (phosphorous) and N (Nitrogen) to be ion-implanted. After these doses are ion-implanted, a high temperature (900-1050 C) spike anneal is performed to activate the formed source/drains. A second mask allows a second dose of phosphorus to be implanted in the source/drain regions. The second dose of the phosphorus is typically higher than the first dose of phosphorus. The second dose of phosphorus lowers the Rsd (resistance of the source and drain regions) and dopes n-type poly-silicon blocks.

Abstract: In a bi-directional embodiment, an authorization transponder 114 coupled to the mobile device 128 transmits an interrogating message, which includes a UID 116 associated with the mobile device, to a nearby wireless key 100. The wireless key compares this received UID 116 with the one or more UID's 102 stored on the wireless key, and if a match is detected, sends the wireless key's UID or encrypted variant thereof to the interrogating authorization transponder 114. On receiving the UID from the wireless key 100 and determining that it matches the authorization transponder UID 116, a command is sent from authorization transponder 114 to mobile device 128 enabling some or all operations of mobile device 128.

Abstract: A metal-oxide-semiconductor transistor (MOS) and method of fabricating the same, in which the effective channel length is increased relative to the width of the gate electrode. A dummy gate electrode overlying dummy gate dielectric material is formed at the surface of the structure, with self-aligned source/drain regions, and dielectric spacers on the sidewalls of the dummy gate structure. The dummy gate dielectric underlies the sidewall spacers. Following removal of the dummy gate electrode and the underlying dummy gate dielectric material, including from under the spacers, a silicon etch is performed to form a recess in the underlying substrate. This etch is self-limiting on the undercut sides, due to the crystal orientation, relative to the etch of the bottom of the recess. The gate dielectric and gate electrode material are then deposited into the remaining void, for example to form a high-k metal gate MOS transistor.

Abstract: Amplifier circuits and methods of cancelling the Miller effects in amplifiers are disclosed herein. An embodiment of an amplifier circuit includes an input and an output. An amplifier is connected between the input and the output of the circuit. A voltage source is connected to the output, wherein the voltage source output is one hundred eighty degrees out of phase with the voltage output by the amplifier, and wherein the voltage source cancels gain due to the Miller effect of a Miller capacitance between the input and output.

Abstract: For determining a power consumption of electrical circuitry, at least one device executes at least a portion of a software application having an effect on a current through the electrical circuitry. A current is generated through a transistor for mirroring the current through the electrical circuitry. In response to a control word, a reference current is generated. In response to executing the portion of the software application, the control word is varied to determine a value thereof that causes the reference current to approximately equal the current through the transistor, in a manner that correlates the effect of the portion of the software application on the current through the electrical circuitry.

Abstract: A measurement system includes a current source that is arranged to generate a current pulse to charge a capacitor as a function of an input clock signal. The accumulated charge on the capacitor is converted to a sample (e.g., resultant digital value) by an ADC (analog-to-digital converter). The samples can be aggregated as a distribution in order to estimate the jitter of the input clock signal. Variability of the measurement system can be minimized through calibrating the device-under-test at specific points of PVT (process, voltage, and temperature) conditions. A confidence metric such as a standard of deviation can be derived from the associated samples. The measurement system can be included on a substrate that includes the oscillator that generates the input clock signal.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: Differential voltage mode signal driver circuitry is presented in which a differential current mode amplifier input stage provides a differential signal, and an output stage includes a pair of bipolar transistors receiving the differential signal and being connected in series with a pair of cross-coupled field effect transistors that are coupled to corresponding current sources, where a negative impedance circuit is connected between the field effect transistors to substantially cancel a parasitic capacitance of a driven output circuit.

Abstract: A packaged multi-output converter (200) comprising a leadframe with a chip pad (201) as ground terminal and a plurality of leads (202) including the electrical input terminal (203); a first FET chip (sync chip, 220) with its source terminal affixed to the leadframe and on its opposite surface a first drain terminal (221) positioned adjacent to a second drain terminal (222), the drain terminals connected respectively by a first (241) and a second (242) metal clip to a first (204) and second (205) output lead; a second FET chip (control chip, 211), positioned vertically over the first drain terminal, with its source terminal attached onto the first clip; a third FET chip (control chip, 212), positioned vertically over the second drain terminal, with its source terminal attached onto the second clip; and the drain terminals (213, 214) of the second and third chips attached onto a third metal clip (260) connected to the input lead (203).

Abstract: Improved preamplifier circuits for converting single-ended input current signals to differential output voltage signals, including first and second transimpedance amplifiers with input transistors operating according to bias currents from a biasing circuit, output transistors and adjustable feedback impedances modified using an automatic gain control circuit, as well as a reference circuit controlling the bias currents according to an on-board reference current and the single-ended input or the differential output voltage signals from the transimpedance amplifiers.