Patents Assigned to Tokuyama Corporation
  • Quaternary alkyl ammonium hypochlorite solution, method of producing the same, and method for processing semiconductor wafers
    Patent number: 11390577
    Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: July 19, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Takafumi Shimoda, Yuki Kikkawa, Tomoaki Sato, Takayuki Negishi
  • Treatment liquid for semiconductor wafers, which contains hypochlorite ions
    Patent number: 11390829
    Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: July 19, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Takafumi Shimoda, Takayuki Negishi, Yuki Kikkawa, Seiji Tono
  • CHROMENE COMPOUND AND PHOTOCHROMIC OPTICAL ARTICLE
    Publication number: 20220213050
    Abstract: A chromene compound which can exhibit excellent photochromic properties. The chromene compound is represented by the following formula (1). In the formula, at least one of R1 or R2 represents the group having the radical-polymerizable group, wherein the group having a radical-polymerizable group is represented by the following formula (2) (wherein R10 represents a linear or branched alkylene group having 1 to 10 carbon atoms and l represents an integer of from 0 to 50); and the ring Z that is represented by the following formula (Z) and is spiro-bonded to a carbon atom located at position-13 in the formula (1) is preferably an aliphatic cyclic group that may have a substituent, the group having 3 to 20 carbon atoms for forming the ring together with the carbon atom at the 13-position, or the like.
    Type: Application
    Filed: June 8, 2020
    Publication date: July 7, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Masayuki MIYAZAKI, Junji TAKENAKA, Junji MOMODA
  • Polycrystalline Silicon Material
    Publication number: 20220204349
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta]?(Cd1+Cd2)?(Ca1+Ca2)?8 [ppta].
    Type: Application
    Filed: April 2, 2020
    Publication date: June 30, 2022
    Applicant: Tokuyama Corporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda
  • Polycrystalline Silicon Material
    Publication number: 20220195621
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]?(Ca1+Ca2)?(Cd1+Cd2)?26 [ppta].
    Type: Application
    Filed: April 2, 2020
    Publication date: June 23, 2022
    Applicant: Tokuyama Corporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda
  • SILICA-TITANIA COMPOSITE OXIDE POWDER
    Publication number: 20220185739
    Abstract: A silica-titania composite oxide powder of the present invention has an average particle diameter D (?m) of 0.1 ?m or more to 3.0 ?m or less, an average refractive index of 1.47 or more at a measurement wavelength of 589 nm, and a minimum absorbance S measured from a dispersion of 30 mass % of silica-titania composite oxide particles in a liquid having the same refractive index as the average refractive index, the minimum absorbance S satisfying the relationship “S<0.026?0.008×D.
    Type: Application
    Filed: March 12, 2020
    Publication date: June 16, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventor: Kenichi ISHIZU
  • Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal
    Patent number: 11348785
    Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: May 31, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Toru Nagashima, Masayuki Fukuda
  • PHOTOCHROMIC OPTICAL ARTICLE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20220162486
    Abstract: The present invention relates to a photochromic optical article including a pair of optical article plates bonded together through an adhesive layer containing a photochromic compound and at least one resin selected from a urethane resin, an epoxy resin, and an acrylic resin, wherein a deviation of the thickness of the adhesive layer on a concentric circle from the central point of the pair of optical article plates is within ±10%. In accordance with the present invention, in the photochromic optical article formed of a pair of optical article plates bonded together through an adhesive layer, a photochromic optical article in which the thickness of the photochromic adhesive layer is prescribed, and which is free from problems, such as a lowering of the appearance quality, can be provided.
    Type: Application
    Filed: April 3, 2020
    Publication date: May 26, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Katsuhiro MORI, Takao NOGUCHI, Junji MOMODA
  • Chlorosilane Producing Method
    Publication number: 20220162079
    Abstract: Provided is a method for stably conducting a process for producing chlorosilanes by a chlorination reaction of metallic silicon. When producing chlorosilanes by the chlorination reaction of the metallic silicon, metallic silicon having a sodium content of 1 ppm or more and 90 ppm or less in terms of element and an aluminum content of 1000 ppm or more and 4000 ppm or less in terms of element is used as the metallic silicon. An average particle diameter of the metallic silicon is preferably about 150 ?m to 400 ?m.
    Type: Application
    Filed: February 26, 2020
    Publication date: May 26, 2022
    Applicant: Tokuyama Corporation
    Inventors: Katsuya Ogihara, Shoji Iiyama, Kunihiko Matsumura
  • Method for producing triazolidinedione compound
    Patent number: 11339133
    Abstract: Provided is a method for industrially producing a triazolidinedione compound at a high purity and a high yield. A precipitation step for preparing a solution that contains a triazolidinedione compound represented by formula (1) and precipitating the triazolidinedione compound therefrom is performed. In this step, the pH of the solution is adjusted to 3.0 to 8.5 and the solution is prepared so as to contain 3-15 parts by volume of solvents for 1 part by mass of the triazolidinedione compound. (In the formula, R1 is a substituted or unsubstituted amino group-bearing organic group.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: May 24, 2022
    Assignees: TOKUYAMA CORPORATION, JOEL LTD.
    Inventors: Makoto Satou, Misao Matsushige, Seketsu Fukuzawa, Masaki Takiwaki
  • Method for producing polycrystalline silicon processed article
    Patent number: 11332377
    Abstract: A method for producing a polycrystalline silicon processed article includes removing a polycrystalline silicon rod, obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method, in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod. The polycrystalline silicon rod is detached from the electrode and the carbon member present on the end portion of the polycrystalline silicon rod is covered using a covering material until the processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: May 17, 2022
    Assignee: Tokuyama Corporation
    Inventor: Ayao Akiyoshi
  • Aluminum nitride particle
    Patent number: 11325830
    Abstract: An aluminum nitride particle including: a plurality of planes randomly arranged in a surface of the particle, the plurality of planes forming an obtuse ridge part or an obtuse valley part in the surface of the particle, the plurality of planes being observable in a scanning electron micrograph with 500 times magnification; wherein the particle has a longer diameter L of 20 to 200 ?m; a ratio L/D of the longer diameter L (unit: ?m) to a shorter diameter D (unit: ?m) of the particle is 1 to 1.25; and the plurality of planes comprise a first plane, wherein an area S (unit: ?m2) of the first plane satisfies S/L?1.0 ?m.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: May 10, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Akimasa Kuramoto, Yukihiro Kanechika
  • PROTECTIVE PATCH APPLICATION AUXILIARY TOOL AND PROTECTIVE PATCH APPLICATION METHOD USING THE SAME
    Publication number: 20220133459
    Abstract: The present invention provides an application auxiliary tool that enables easy and quick application of a protective patch to a teat of a domestic animal, and a method of easily and quickly applying a protective patch to a teat of a domestic animal using the application auxiliary tool. An application auxiliary tool (2) for applying a protective patch (54) to a teat (64) of a domestic animal so as to protect a teat orifice (66) of the domestic animal includes: paired operation pieces (4a, 4b) that are rotatably connected to each other at their base ends (10a, 10b); and an elastic member (6) located between free ends (12a, 12b) of the paired operation pieces (4a, 4b).
    Type: Application
    Filed: June 13, 2019
    Publication date: May 5, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Emi USHIODA, Yoji INUI, Katsuhiro SHIRAI, Hitoshi KONDO, Kie YAMADA
  • Electrolysis vessel for alkaline water electrolysis
    Patent number: 11319635
    Abstract: The electrolysis vessel for alkaline water electrolysis includes an anode end unit, a cathode end unit, anode chamber cells, cathode chamber cells, and separating membranes. The anode/cathode end units each comprise a pressing frame, an insulating plate, and an end cell. The anode/cathode chamber cells are alternately arranged between the anode end unit and the cathode end unit. Electrolyte supply/recovery flow paths are arranged through each chamber cell. Electrolyte supply/recovery pipes each being a metal pipe, at least an inner surface of the metal pipe being coated with an insulating resin, are connected to the electrolyte supply/recovery flow paths respectively via through-holes arranged through the pressing frame(s) and the insulating plate(s).
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: May 3, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Yasuyuki Tanaka, Ryouta Umebayashi
  • Polycrystalline silicon rod manufacturing method, and reactor
    Patent number: 11293094
    Abstract: A method of manufacturing polycrystalline silicon rod, wherein a reactor for manufacturing a polycrystalline silicon rod includes gas supply nozzles, and at least one nozzle is a flow rate amplification nozzle having a function that the amount of a silicon deposition raw material gas supplied to the nozzle can be increased.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: April 5, 2022
    Assignee: Tokuyama Corporation
    Inventors: Takafumi Tatsukawa, Yasumasa Aimoto
  • Polycrystalline Silicon Lump, Packaging Body Thereof, and Method for Producing Same
    Publication number: 20220089341
    Abstract: A polycrystalline silicon lump packaging body is a packaging body in which the resin bag is filled with the polycrystalline silicon lumps having a surface metal concentration of 1000 pptw or less, in which a nitrate ion amount and preferably a fluorine ion amount present inside the packaging body are each 50 ?g/L or less with respect to a filling void of the polycrystalline silicon lumps formed when the packaging body is left at 25° C. under 1 atm.
    Type: Application
    Filed: January 21, 2020
    Publication date: March 24, 2022
    Applicant: Tokuyama Corporation
    Inventor: Manabu Sakida
  • ONIUM SALT-CONTAINING TREATMENT LIQUID FOR SEMICONDUCTOR WAFERS
    Publication number: 20220073820
    Abstract: Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided. (In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X? is, for example, a chloride ion.
    Type: Application
    Filed: February 13, 2020
    Publication date: March 10, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yuki KIKKAWA, Tomoaki SATO, Takafumi SHIMODA, Takayuki NEGISHI
  • Method for Producing Refined Chlorosilane
    Publication number: 20220073358
    Abstract: A method for producing purified chlorosilanes includes bringing crude chlorosilanes, such as crude trichlorosilane and crude silicon tetrachloride, which contain a boron compound and/or a phosphorus compound, into contact with chlorine (preferably 1 ppm mole to 3000 ppm mole with respect to 1 mole of crude chlorosilanes) in presence of alkylphenol such as 2-methylphenol, and then distilling the crude chlorosilanes.
    Type: Application
    Filed: January 21, 2020
    Publication date: March 10, 2022
    Applicant: Tokuyama Corporation
    Inventors: Junya Sakai, Shoji Iiyama
  • Chlorosilane Manufacturing Method
    Publication number: 20220064009
    Abstract: When producing chlorosilanes by a reaction between metallic silicon and hydrogen chloride, as the above metallic silicon, a metallic silicon powder having an oil adhering amount of 5 ppmw or less is subjected to the reaction as the metallic silicon.
    Type: Application
    Filed: December 20, 2019
    Publication date: March 3, 2022
    Applicant: Tokuyama Corporation
    Inventors: Katsuya Ogihara, Shoji Iiyama, Kunihiko Matsumura
  • OPTICAL MATERIAL COMPOSITION AND OPTICAL MATERIAL
    Publication number: 20220056170
    Abstract: The present invention is an optical material composition containing (A) 100 parts by mass of a polymerizable monomer, and (B) 0.001 to 0.3 parts by mass of a UV absorbent having a maximum absorption wavelength of 360 nm or more and less than 380 nm and having a specific structure, and an optical material formed of the composition. According to the present invention, there can be provided an optical material composition containing a UV absorbent and having good long-term storage stability, and an optical material formed of the composition, in particular, an optical material composition capable of forming a plastic lens having a high blue light cut rate.
    Type: Application
    Filed: December 17, 2019
    Publication date: February 24, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Ayako OHARA, Taichi HANASAKI, Junji TAKENAKA, Junji MOMODA