Patents Assigned to Tokuyama Corporation
  • CURABLE COMPOSITION FOR OPTICAL MATERIALS, AND OPTICAL MATERIAL
    Publication number: 20220056187
    Abstract: The present invention relates to a curable composition for an optical material, containing (A) 100 parts by mass of a radical polymerizable monomer, (B) 0.1 to 5 parts by mass of an ultraviolet absorber composed of a benzotriazole compound having a specific structure, which has a maximum absorption wavelength of 360 nm or more and less than 380 nm and an absolute value of the difference in solubility parameter (SP value) from the radical polymerizable monomer (A) of 5.5 (cal/cm3)1/2 or less, (C) 1 to 5 parts by mass of an ultraviolet absorber which is at least one selected from a benzotriazole compound, a benzophenone compound and a triazine compound and has a maximum absorption wavelength of less than 360 nm, and (D) 0.05 to 0.5 parts by mass of a radical polymerization initiator.
    Type: Application
    Filed: December 17, 2019
    Publication date: February 24, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Taichi HANASAKI, Ayako OHARA, Junji TAKENAKA, Junji MOMODA
  • Core wire for use in silicon deposition, method for producing said core wire, and method for producing polycrystalline silicon
    Patent number: 11254579
    Abstract: Efficiency of producing polycrystalline silicon is improved. A silicon filament (11) is constituted by a rod-shaped member made of polycrystalline silicon. The polycrystalline silicon has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma. On a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm are observed.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: February 22, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Masayoshi Nishikawa, Yuji Inoue
  • CURABLE COMPOSITION FOR OPTICAL MATERIALS, AND OPTICAL MATERIAL
    Publication number: 20220049037
    Abstract: The present invention relates to a curable composition for an optical material, containing (A) 100 parts by mass of a radical polymerizable monomer, (B) 0.005 to 0.5 parts by mass of a tetraazaporphyrin compound having a maximum absorption wavelength in a range of 560 nm or more and 620 nm or less, and (C) 0.1 to 10 parts by mass of an ultraviolet absorber having a maximum absorption wavelength in a range of 330 nm or more and 350 nm or less. According to the present invention, it is possible to provide a curable composition for an optical material, capable of being suitably used as a coating material that can easily provide an optical material having good antiglare properties and excellent weather resistance.
    Type: Application
    Filed: December 17, 2019
    Publication date: February 17, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Ayako OHARA, Taichi HANASAKI, Junji TAKENAKA, Junji MOMODA
  • Active pharmaceutical ingredient carrier and production method of the same
    Patent number: 11246931
    Abstract: The present invention relates to an active pharmaceutical ingredient carrier and a production method of the same. The active pharmaceutical ingredient carrier includes silica having a volume of a pore with a pore radius of 1 to 100 nm determined by BJH method of 3.0 to 5.0 ml/g, and a peak of a pore radius of 10 to 50 nm determined by BJH method; and an active pharmaceutical ingredient carried by the silica.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: February 15, 2022
    Assignee: Tokuyama Corporation
    Inventors: Yoshimi Hironaka, Tadahiro Fukuju, Hiromasa Yamamoto
  • Silicon Etching Liquid
    Publication number: 20220041931
    Abstract: An etching solution contains a quaternary ammonium compound as a main component, by which an etching rate for silicon is improved, no adhered substances are formed on an etching surface during etching, and the etching rate does not decrease even after continuous use for a long time. The silicon etching solution contains a phenol compound represented by the following Formula (1), a quaternary ammonium compound, and water, and has a pH of 12.5 or more. wherein R1 is a hydrogen atom, a hydroxy group, an alkyl group, an alkoxy group, or an amino group. R2 is a hydrogen atom, a hydroxy group, an alkoxy group, or an amino group. R1 and R2 are not hydrogen atoms at the same time. When R1 is a hydrogen atom, R2 is not a hydroxy group. When R1 is an alkyl group or a hydroxy group, R2 is not a hydrogen atom.
    Type: Application
    Filed: December 9, 2019
    Publication date: February 10, 2022
    Applicant: Tokuyama Corporation
    Inventors: Manami Oshio, Seiji Tono, Yoshiki Seike
  • Method for producing polycrystalline silicon
    Patent number: 11242253
    Abstract: Provided is a method which not only prevents (i) accumulation of fine silicon powder in a separation device and a pipe which are provided in steps after passage of a filter and (ii) damage to a pump, but also reduces adhesion of a silane oligomer to the filter. A method, in accordance with an embodiment of the present invention, for producing polycrystalline silicon, includes: a silicon deposition step; a separation step; and a fine powder removal step of removing the fine silicon powder by passing a chlorosilane condensate through a filter.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 8, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventor: Yuichi Inoue
  • Reactor and production method of trichlorosilane
    Patent number: 11241666
    Abstract: An object of the present invention is to prevent stress-corrosion cracking of a header (40) of a reactor. A reactor for producing trichlorosilane by causing metal silicon powder and a hydrogen chloride gas to react with each other includes a cooler (70), the cooler including a plurality of heat transfer medium pipes (30) and a header (40), the plurality of heat transfer medium pipes being provided in a fluid bed (60) inside the reactor, the header being provided in a freeboard section (50) inside the reactor, the header being comprised of a corrosion-resistant material.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: February 8, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Kenji Hirota, Katsuya Ogihara
  • METHOD FOR PRODUCING ORGANIC SOLVENT SOLUTION OF QUATERNARY AMMONIUM HYDROXIDE
    Publication number: 20220033343
    Abstract: A treatment liquid composition for semiconductor production including: a quaternary ammonium hydroxide; and a first organic solvent dissolving the quaternary ammonium hydroxide, the first organic solvent being a water-soluble organic solvent having a plurality of hydroxy groups, wherein a water content in the composition is no more than 1.0 mass % on the basis of the total mass of the composition; contents of Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, and Zn in the composition are each no more than 100 mass ppb on the basis of the total mass of the composition; and a content of Cl in the composition is no more than 100 mass ppb on the basis of the total mass of the composition.
    Type: Application
    Filed: September 26, 2019
    Publication date: February 3, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Shoji TACHIBANA, Seiji TONO, Sumito ISHIZU, Yoshiaki YAMASHITA
  • METHOD FOR INHIBITING GENERATION OF RUTHENIUM-CONTAINING GAS FROM RUTHENIUM-CONTAINING LIQUID
    Publication number: 20220033976
    Abstract: The present invention provides a method for inhibiting a RuO4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO4 gas, including at least one of a reducing agent and a basic compound.
    Type: Application
    Filed: July 27, 2021
    Publication date: February 3, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Tomoaki SATO, Fuyuki SATO, Takayuki NEGISHI
  • METHOD FOR PRODUCING ISOPROPYL ALCOHOL
    Publication number: 20220017440
    Abstract: A method for producing isopropyl alcohol is provided in which propylene is hydrated directly with water to produce isopropyl alcohol, the method including: a distillation step in which crude isopropyl alcohol is distilled; and a filtration step in which the isopropyl alcohol obtained in the distillation step is filtered through a filter having an ion-exchange group.
    Type: Application
    Filed: October 3, 2019
    Publication date: January 20, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Akira Sera, Masashi Shinagawa, Masanari Ishizuki
  • SEMICONDUCTOR WAFER TREATMENT LIQUID CONTAINING HYPOCHLORITE IONS AND PH BUFFER
    Publication number: 20220010206
    Abstract: The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1): (wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20).
    Type: Application
    Filed: February 13, 2020
    Publication date: January 13, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Takafumi SHIMODA, Yuki KIKKAWA, Takayuki NEGISHI, Seiji TONO, Tomoaki SATO
  • Apparatus for alkaline water electrolysis, and gas production method
    Patent number: 11220755
    Abstract: An apparatus for alkaline water electrolysis including: an electrolysis vessel; first and second gas-liquid separators respectively separating electrolytes and oxygen/hydrogen gas flowing out from anode/cathode chambers; first and second electrolyte tanks respectively storing the electrolytes separated by the first/second gas-liquid separators; oxygen and hydrogen gas feed pipes respectively introducing the separated oxygen/hydrogen gas into gas phase parts of the first/second electrolyte tanks; oxygen and hydrogen gas exhaust pipes respectively allowing oxygen/hydrogen gas to flow out from the gas phase parts of the first/second electrolyte tanks therethrough; and a circulator supplying the electrolytes from the first and second electrolyte tanks to the electrolysis vessel.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: January 11, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Yasuyuki Tanaka, Harumi Sueoka
  • HIGH-PURITY ISOPROPYL ALCOHOL AND METHOD FOR MANUFACTURING SAME
    Publication number: 20220002641
    Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 6, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Shunsuke Hosaka, Masanari Ishizuki
  • Method for manufacturing polycrystalline silicon fragment and method for managing surface metal concentration of polycrystalline silicon fragment
    Patent number: 11214892
    Abstract: A method for manufacturing polycrystalline silicon fragments includes producing a polycrystalline silicon rod by the Siemens method; crushing the polycrystalline silicon rod to obtain polycrystalline silicon fragments; and cleaning by etching the polycrystalline silicon fragments in a cleaning tank. In the cleaning, small pieces of the polycrystalline silicon having controlled shapes and sizes are present in the cleaning tank and the weight change of the small pieces of the polycrystalline silicon before and after the etching is measured to thereby manage the cleaning.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: January 4, 2022
    Assignee: Tokuyama Corporation
    Inventor: Shigeki Nishimura
  • METHOD AND APPARATUS FOR PRODUCING HALOGEN OXYACID SOLUTION
    Publication number: 20210403323
    Abstract: The present invention provides industrially advantageous production method and production apparatus, with respect to production of a halogen oxyacid solution. There is solved by a method for producing a halogen oxyacid solution, comprising continuously supplying an organic alkaline solution and halogen to a static mixer and mixing them, to thereby continuously obtain a halogen oxyacid generated.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 30, 2021
    Applicant: TOKUYAMA CORPORATION
    Inventors: Takayuki NEGISHI, Takafumi SHIMODA, Akihiro SAITO, Naoki MATSUDA, Kenichi KAKIZONO, Takeshi KAWANO, Masayuki MORIWAKI
  • TREATMENT LIQUID FOR SEMICONDUCTOR WITH RUTHENIUM AND METHOD OF PRODUCING THE SAME
    Publication number: 20210388508
    Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.
    Type: Application
    Filed: July 8, 2020
    Publication date: December 16, 2021
    Applicant: TOKUYAMA CORPORATION
    Inventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI
  • Method for producing semicarbazide compound
    Patent number: 11192854
    Abstract: Provided is a method for producing a high-purity, high-quality semicarbazide compound at a high yield by a simple method. The semicarbazide compound is recrystallized by a solvent containing a halogenated hydrocarbon. Dichloromethane is preferred as the halogenated hydrocarbon.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: December 7, 2021
    Assignees: TOKUYAMA CORPORATION, JOEL LTD.
    Inventors: Makoto Satou, Misao Matsushige, Seketsu Fukuzawa, Masaki Takiwaki
  • Bismuth compound, curable composition and cured product
    Patent number: 11186600
    Abstract: A bismuth compound which is little toxic, insoluble in a monomer, usable for optical purpose and used as a substitute for a lead compound, in which a phosphoric acid ester having a (meth)acrylic group(s) is bonded to bismuth, and a method of producing the bismuth compound by reacting bismuth (meth)acrylate or bismuth subsalicylate with a phosphoric acid ester having a (meth)acrylic group(s) and carrying out dehydration.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: November 30, 2021
    Assignee: TOKUYAMA CORPORATION
    Inventors: Takayoshi Kawasaki, Junji Momoda, Tomohiro Kawamura, Mayumi Kishi, Michihito Nakatani
  • MILKING DEVICE
    Publication number: 20210352866
    Abstract: A milking device (10) has a teat cup (1) with liner (3) and milk claw (30). The liner includes a bore part (3b) elastically deformable between an open and closed state arranged inside a shell (2) to form space between an inner surface of the shell and the bore part; a mouthpiece part 3a disposed at one end of the bore part and closes one end part of the shell and into which a teat is inserted; and a short milk tube part (3d) disposed at the other end side of the bore part and closes the other end part of the shell and through which milk from the teat at the bore part flows. A short milk tube part (3d) is coupled to the claw. Vents (3aa, 3da, 36) are provided to a plurality of places on the mouthpiece part, the short milk tube part, and the claw.
    Type: Application
    Filed: September 17, 2019
    Publication date: November 18, 2021
    Applicant: TOKUYAMA CORPORATION
    Inventors: Hitoshi Kondo, Yoji Inui
  • INHIBITOR FOR RuO4 GAS GENERATION AND METHOD FOR INHIBITING RuO4 GAS GENERATION
    Publication number: 20210340095
    Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.
    Type: Application
    Filed: September 23, 2020
    Publication date: November 4, 2021
    Applicant: TOKUYAMA CORPORATION
    Inventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI