Abstract: A gas production system which applies plasma to a catalyst in a reactor and reforms a supplied source gas and a supplied oxidant gas to produce a product gas, includes: gas ratio change means for changing a ratio between the source gas to be supplied to the reactor by source gas supply means and the oxidant gas to be supplied to the reactor by oxidant gas supply means; and plasma generation means for generating the plasma to be applied to the catalyst. Thus, formation of highly reactive chemical species on a catalyst surface is efficiently promoted, whereby the yield of the product gas and energy efficiency are improved.

Abstract: In response to request signals transmitted from a terminal, a server generates prediction information relating to pharmacokinetics of a peptide. The server then transmits the prediction information to the terminal.

Abstract: Provided is a compound, which is represented by the following general formula (1): where X1 and X2 each independently represent an acrylic group or a methacrylic group, R1 to R8 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, and “n” represents an integer of from 1 to 10.

Abstract: This gas production system includes: a gas production device having a reactor forming a flow path for a treatment target gas, a first electrode and a second electrode to which voltage is applied, and a catalyst layer provided in the flow path and containing a catalyst; voltage generation means for generating voltage to be applied to the first electrode and the second electrode; and gas supply means for supplying the treatment target gas to the gas production device. The voltage generation means has frequency setting means for setting the frequency of the voltage in accordance with the treatment target gas, plasma generated between the first electrode and the second electrode is applied to the catalyst layer, and the treatment target gas is reformed to obtain a product gas.

Abstract: A molded sintered body containing a mayenite type compound, an inorganic binder sintered material, and a transition metal, wherein a content of the inorganic binder sintered material is 3 to 30 parts by mass with respect to 100 parts by mass of the molded sintered body, and the molded sintered body has at least one pore peak in each of a pore diameter range of 2.5 to 20 nm and a pore diameter range of 20 to 350 nm. A method for producing the molded sintered body, including mixing a precursor of a mayenite type compound and a raw material of an inorganic binder sintered material to prepare a mixture; molding the mixture to prepare a molded body of the mixture; firing the molded body to prepare a fired product; and supporting a transition metal on the fired product to produce a molded sintered body.

Abstract: The efficiency of quantum annealing on an LHZ model is improved. An arithmetic apparatus includes an arithmetic unit configured to adjust an intensity schedule function in quantum annealing of a constraint term expressed by many-body interactions in an LHZ model by a hybrid algorithm that uses a value of the intensity schedule function at one time point or each of a plurality of time points as a variational parameter.

Abstract: A camera calibration information acquisition device acquires captured images of a camera calibration target from two or more cameras, detects, from each image, a coordinate of a feature point in the image, calculates—an internal parameter for each camera by using the feature point, calculates, for each camera, a magnitude of error in the coordinate of the feature point, calculates a value for an external parameter of the cameras by using the magnitude of the error, the coordinate of the feature point, and an error function set so that a penalty for error in calculating the external parameter decreases as the magnitude of the error in the coordinate of the feature point in the image increases.

Abstract: A Ti—Ni-based alloy, which has a torsion angle for Interface I that is a junction plane between habit plane variants of a martensitic phase, of less than 1.00°; a wire, an electrically conductive actuator, and a temperature sensor, each of which uses that alloy; and a method of producing the Ti—Ni-based alloy.

Abstract: Provided as a mutant of ? glucuronidase suitable for homogeneous immunoassays is a ? glucuronidase mutant, wherein, in the amino acid sequence of Escherichia coli ? glucuronidase, methionine at position 516 is substituted with lysine, and tyrosine at position 517 is unsubstituted or substituted with a non-tyrosine aromatic amino acid.

Abstract: A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

Abstract: A semiconductor apparatus according to an embodiment of the present invention includes: a plurality of semiconductor chips that are laminated; and a plurality of penetration electrodes that penetrate in a lamination direction through the plurality of semiconductor chips and that electrically connect together the plurality of semiconductor chips, wherein a semiconductor chip has at least one sub-memory array, and a penetration electrode penetrates through an outer circumferential part of the sub-memory array.

Abstract: A solid electrolyte having high electrical conductivity even in a low-temperature region is provided. A solid electrolyte containing a hexagonal perovskite-related compound, in which the compound is a compound represented by the following general formula (1), and an electrolyte layer and a battery using the solid electrolyte are disclosed. Ba7-?Nb(4?x-y)Mo(1+x)MyO(20+z) (1), in the formula (1), M is a cation of at least one element; a represents a Ba deficiency amount and represents a value of 0 or more and 0.5 or less, x represents a value of ?1.1 or more and 1.1 or less, y represents a value of 0 or more and 1.1 or less, and z represents an oxygen non-stoichiometry and represents a value of ?2.0 or more and 2.0 or less, provided that in the formula (1), |x|+y?0.01 is satisfied.

Abstract: A semiconductor apparatus according to an embodiment of the present invention includes: a plurality of semiconductor chips that are laminated; a plurality of penetration electrodes that penetrate in a lamination direction through the plurality of semiconductor chips and that electrically connect together the plurality of semiconductor chips; and a plurality of input/output elements that are configured to perform a signal input/output operation to the plurality of penetration electrodes, wherein the semiconductor chips are joined together via no bump, one of the plurality of input/output elements is connected to each of the plurality of penetration electrodes such that a functional element connected to each of the plurality of penetration electrodes performs an ON or OFF operation at a predetermined timing, and the input/output element connected to a first of two adjacent penetration electrodes among the plurality of penetration electrodes and the input/output element connected to a second of two adjacent pene

Abstract: To provide an electrolyte membrane that exhibits high proton conductivity even at low humidity, the electrolyte membrane includes a composite membrane including: a microporous polyolefin membrane that has an average pore diameter of 1 to 1000 nm and a porosity of 50 to 90% and that can be impregnated with a solvent having a surface free energy of 28 mJ/m2 or more, and an electrolyte containing a perfluorosulfonic acid polymer having an EW of 250 to 850 loaded into the pores of the microporous polyolefin membrane, wherein the membrane thickness of the composite membrane is 1 to 20 ?m.

Abstract: The present invention provides an artifactless superelastic alloy including a Au—Cu—Al alloy, the superelastic alloy containing Cu in an amount of 20 atom % or more and 40 atom % or less, Al in an amount of 15 atom % or more and 25 atom % or less, and Au as a balance, the superelastic alloy having a bulk magnetic susceptibility of ?24 ppm or more and 6 ppm or less. The Ni-free superelastic alloy of the present invention is capable of exhibiting superelasticity in a normal temperature range, and hardly generated artifacts in a magnetic field environment. The alloy can be produced by setting a casting time in a melting and casting step to a fixed time, and hot-pressing an alloy after casting to make material structures homogeneous.

Abstract: An electrode active material for a nonaqueous secondary battery comprising: an alkali metal-transition metal composite oxide particles, a hole-doped graphenewith an anion. The electrode active material for a nonaqueous secondary battery may be manufactured by a method which includes obtaining a hole-doped graphene by bringing a graphene raw material into contact with a two-coordinate boron cation, and bringing the hole-doped graphene into contact with an alkali metal-transition metal composite oxide particle.

Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).

Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

Abstract: A thin film has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system configured to irradiate the thin film with a microwave in response to driving from outside, an excitation unit configured to excite the electron included in the thin film in response to driving from outside, and a detector configured to detect, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.

Abstract: A compound of the formula (III): wherein R21 is a hydrogen atom or an alkyl group; R22 is a hydrogen atom or an alkyl group; and R23 is a divalent organic group.