Abstract: The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.

Abstract: A composition and method for fabricating high-density Ta—Al—O, Ta—Si—N, and W—Si—N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.

Abstract: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

Abstract: A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.

Abstract: A system and method are provided for manufacturing workpieces, such as metal articles like sputtering target, the system comprising: comparing one or more physical or chemical values of a respective one of a plurality of metal target blanks to one or more comparable values of at least one desired criterion; selecting one of the metal target blanks from a plurality of metal target blanks as a work-in-progress; assigning a serial route for the work-in-progress; processing the work-in-progress by translating the work-in-progress from note to node with an automated transport, after completion of the events at each node; rejecting or accepting the work-in-progress as a metal target by evaluating a result of at least one event of the one or more respective events to be completed at, at least one of the plurality of nodes.

Abstract: A vacuum seal having an O-ring between two mating parts. One of the mating parts has a groove configured to receive the O-ring. The groove has a modified dovetail shape with at least one side wall having a compound slope formed with a first portion forming an angle of less than 90 degrees with respect to a base wall and a second portion extending substantially perpendicular to the sealing face of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width of the groove mouth is at least 94% of the diameter of the O-ring.

Abstract: A magnetron sputtering target having at least one expansion groove strategically located on the target surface such that, during magnetron sputtering, contamination of the target surface due to separation and de-lamination of re-deposited sputtered particles from the target surface is reduced. The sputter target comprises a re-deposited layer having secondary cracks and a characteristic distance between cracks for supporting the inherent material stress associated with the thermal expansion of the target. The expansion groove is then positioned substantially within the characteristic distance to reduce separation and de-lamination of the re-deposited layer from the target surface.

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 ?m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.

Abstract: A fixture and method is provided for gripping an article, such as a sputtering target. The fixture comprises a base, a first set of contact rollers, and a second set of contact rollers, wherein at least one of the first set and the second set are adjustably positioned relative to the other of the first set and the second set on the base. The contact rollers can be configured as v-grooved wheels that will only touch chamfered portions of an outer diameter of the sputtering target when the contact rollers are clamped against the sputtering target. At least one of the first set and the second set of contact rollers can be pivotally mounted on a slide, with the slide being adjustably positioned on the base of the fixture.

Abstract: An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device.

Abstract: The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

Abstract: A system and method are provided for manufacturing a sputtering target. The system is preferably automated. Sub systems of the manufacturing system include a robotic part handling sub system, a weighing sub system adapted to measure the weight of a part to be manufactured into a sputtering target, and a machining sub system adapted to finish machine a part to be manufactured into a sputtering target. The system can further include a cleaning sub system adapted to clean a part to be manufactured into a sputtering target, an inspection sub system adapted to measure dimensions of a part to be manufactured into a sputtering target, and a feedback control sub system adapted to provide control signals to one or more of the robotic handling sub system, the weighing sub system, the cleaning sub system, and the inspection sub system to control processing performed by one or more of the sub systems.

Abstract: A system and method are provided for manufacturing workpieces, such as metal articles like sputtering target, the system comprising: comparing one or more physical or chemical values of a respective one of a plurality of metal target blanks to one or more comparable values of at least one desired criterion; selecting one of the metal target blanks from a plurality of metal target blanks as a work-in-progress; assigning a serial route for the work-in-progress; processing the work-in-progress by translating the work-in-progress from note to node with an automated transport, after completion of the events at each node; rejecting or accepting the work-in-progress as a metal target by evaluating a result of at least one event of the one or more respective events to be completed at, at least one of the plurality of nodes.

Abstract: A fixture and method is provided for gripping an article, such as a sputtering target. The fixture comprises a base, a first set of contact rollers, and a second set of contact rollers, wherein at least one of the first set and the second set are adjustably positioned relative to the other of the first set and the second set on the base. The contact rollers can be configured as v-grooved wheels that will only touch chamfered portions of an outer diameter of the sputtering target when the contact rollers are clamped against the sputtering target. At least one of the first set and the second set of contact rollers can be pivotally mounted on a slide, with the slide being adjustably positioned on the base of the fixture.

Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: A method and apparatus for ultrasonically measuring the thickness of sputter targets of varying shapes. An immersion bubble (32) and transducer (36) provide pulses to a front surface (24) and a front surface/bonded surface (26) interface of a target. The pulses generate reflected echoes that are converted to electric signals. By measuring the difference in time that the electric signals occur the thickness of the target may be approximated to identify whether the thickness of the target is appropriate for use. The system includes a sputter track (15), specimen (20), chuck (28), nozzle (34), columns (60), opening (62), inlet (70), cable (58), gauge (59), turret (90), position (92), remote PC controller (110), electrical line (112), and rear part (84).

Abstract: A vacuum seal (1) having an O-ring (12) between two mating parts (2) (6). One of the mating parts has a groove (10) configured to receive the O-ring (12). The groove (10) has a modified dovetail shape with at least one side wall (14) having a compound slope formed with a first portion (22) forming an angle of less than 90 degrees with respect to a base wall (18) and a second portion (24) extending substantially perpendicular to the sealing face (4) of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width (W) of the groove mouth (20) is at least 94% of the diameter (D) of the O-ring.

Abstract: A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.

Abstract: Continuous casting of copper to produce sputter targets (20). The resulting targets comprise a relatively low amount of inclusions therein and will result in reduced particulate sputtering leading to a more uniform coating that is sputtered onto the desired substrate.

Abstract: A system and method for physical vapor deposition (PVD) of dielectric material characterized by the conversion of a beam of positively charged ions into a beam of neutral particles, said beam of neutral particles being directed to bombard a sputtering target. In operation, sputtering targets comprised of low-k dielectric material can be successfully sputtered by such a beam of neutral particles, allowing for the integration of low-k dielectric materials into the on-chip wiring of semiconductor devices.