Abstract: Methods for making Cr-Me sputter targets wherein Me is a metal are disclosed. Preferably Me is a transition metal and most preferably is a member selected from the group consisting of Cu, Fe, and V. As a first step in the method, Cr and Me powder or crystals on the order of less than 100 mesh are provided. Preferably, the powders or crystals have a size of about 6-8 mesh. The Cr is present in a weight ratio amount of at least 50% Cr based upon the total combined weight of Cr and Me present. The Cr and Me components are then mechanically alloyed in a high energy ball mill or the like so as to provide an intimate mixture of powdered Cr-Me. The resulting powder is screened with, for example, a -20 -70 mesh screen, and then subjected to hot isostatic pressing (HIP) conditions to consolidate the powders at pressures of about 10,000 to 45,000 psi and temperatures of 800.degree. C. to 1500.degree. C. for about 1/4 to 5 hours.

Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are disclosed wherein a gallium containing solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a gallium or gallium alloy liquid component and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are available wherein a solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a low melting point metal component having a melting point of about 70.degree. C. or less and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods for facilitating recycling of backing plates in bonded target/backing plate assemblies and structural assemblies for use in these methods are disclosed. The target and backing plate are joined by a solder paste material that may be applied to adjoining surfaces of the target and backing plate at low temperature. The paste solidifies to have a high decomposition temperature on the order of greater than 400.degree. C. Provision of a solder layer having a liquidus temperature of about 100.degree.-250.degree. C. between the backing plate and solder paste allows for easy target and backing plate separation and subsequent backing plate reusage.

Abstract: A method of quality control for targets intended for use in the sputtering process. A test parameter is established by immersing the target in a tank of liquid, irradiating the target with ultrasonic energy in the Rayleigh frequency range, and integrating the portion of the ultrasonic energy which passes through the target and reflects off the back wall. This test parameter is closely related to the uniformity of a film which may be sputtered from the target onto a substrate.

Abstract: A method of producing a sputter target assembly including a tungsten-titanium target attached to a titanium backing plate. The method includes consolidating a tungsten-titanium powder composition to form a target while simultaneously bonding the powder composition to the titanium backing plate to form an interdiffusion-type bond between the target and the backing plate such that the target assembly possesses extremely high temperature operating capability.

Abstract: Methods of preparing a sputter target or a sputter target/backing plate assembly and assemblies so prepared are disclosed. The methods comprise forming a friction weld joint consisting of a horizontal surface, an angled surface, a curved surface or any combination of the preceding. The target is rotated in the collet of a friction welding machine and the base or backing plate forced against the target to form the weld.

Abstract: Dual phase sputter targets consisting essentially of TiN and Al, methods of manufacture thereof, and cathodic sputtering methods using such targets are disclosed. The targets are prepared by blending TiN and Al powders followed by compaction to full density. The thus compacted materials are optionally sintered and are then formed into the desired target shape. The targets are used in cathodic sputtering processes to form opaque, dark colored decorative and wear resistant coatings.

Abstract: An automatic electrodeposition apparatus is disclosed. The desired substrate is brush plated by moving the brush on top of the plate. The brush may be selectively, and sequentially supplied with any one of a number of working solutions comprising conventional cleaning and plating solutions. De-ionized water and pressurized air may also be selectively fed to the brush for cleaning at desired time or job intervals throughout operation of the machine. A programmable logic controller controls feed of working solution, water, and air flow to the brush. It also controls brush movement and monitors electrodeposition through measurement of ampere-hours spent during operation.

Abstract: Methods of bonding a titanium containing sputter target member to a heat conductive backing member, such as a copper backing plate, and bonded target/backing plate assemblies are disclosed. Due to the poor wettability of titanium based materials, a uniform, thin film of aluminum is coated thereover and acts as an anchor layer for application of tin and/or indium based solder layers thereover to securely solder bond the target and backing plate. The aluminum coating is sputter coated onto the target. Then, the coated target is heated in an oxygen containing atmosphere. The thus treated titanium target is then ready for conventional solder joining to a copper backing plate or the like by use of tin, lead, and/or indium based solder metals.

Abstract: Elastic and plastic deformation of backing plate members in target-backing plate cathode assemblies for cathodic sputter coating apparatus are minimized by the provision of a concave surface portion located at the target/backing plate interface and by provision of a backing plate material having a yield strength of at least about 35 ksi.

Abstract: Tungsten-titanium sputter targets of at least 95% theoretical density are provided with little or no .beta.(Ti, W) phase constituent. Such targets will minimize troublesome particulate emissions during sputter coating conditions.

Abstract: Methods of preparing a sputter target/backing plate assembly and assemblies so prepared are disclosed. The methods comprise forming a plurality of grooves in one of the metal surfaces to be joined in the bonding process. The grooves are each provided in a closed, loop configuration or pattern. The target and backing plate to be bonded are adjacently positioned to form an assembly with the grooved surface forming one of the interfacial joint surfaces. The assembly is then placed in a controlled atmosphere, such as a vacuum, heated to a temperature just below the melting point of the lower melting metal to be joined, and pressed until the grooves are substantially filled with metal or alloy from the other, non-grooved interfacial surface.

Abstract: A sputtering target assembly is disclosed having a sputtering gun with an inner and outer annular wall, where the inner annular wall has a plurality of radially projecting set screws, threadably movable within threaded apertures in the inner annular wall. A mounting ring is profiled to fit over the inner annular wall, the mounting ring having a recessed grove, into which the set screws are received, to secure the mounting ring. The mounting ring includes a plurality of radially disposed spring plungers which are threadably installed in threaded apertures in the mounting ring. The target has a grooved inner annular surface for receiving the spring ball plungers, whereby the target is retained to the sputtering gun.

Abstract: A cathode sputtering mechanism is disclosed having a target nest and a target located within the target nest. The target nest includes a threaded internal peripheral surface which is complementary to external threads on the outer peripheral surface of the target. The target also includes a central opening having a tapered upwardly facing surface having apertures extending vertically into the tapered surface. A removal wrench includes a cylindrical ring having at its lower end a tapered surface which matches the tapered surface on the target. The wrench also includes torque pins extending into the tapered surface of the cylindrical ring which are disposed in complementary spacial relationship with the apertures in the target.

Abstract: A cathode sputtering assembly includes a sputter target welded to a corresponding backing member, where the target and backing member are adapted for insertion into a sputtering system. The target has a reduced diameter portion profiled for receipt within a counterbored upper section of the backing member. The target has a beveled surface above the reduced diameter section, and the backing member has an upper tapered edge, where the interface between the sputtering target and the backing member cooperate to define a V-groove. Both the target and the backing member are comprised of aluminum and the target and backing member are TIG welded together with aluminum filler rod.

Abstract: A sputter source of the type which relies on thermal expansion of an annular sputter target to make good physical contact with a peripheral cooling wall is disclosed. Novel means are provided for holding the sputter target in place in the source when the source and target are at ambient temperature. In a preferred embodiment of the invention the holding means comprises spring means which cooperate with a groove in either an inner or outer rim of the sputter target. By the application of a sufficient axial force on the target, the gripping force of the spring means is overcome and the target can be removed or inserted. Also shown is a structure which can be used to retrofit the novel quick change target into an existing sputter source.

Abstract: The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.

Abstract: The present invention provides a film comprising alternate layers of a metal such as zirconium and silicon. The film has a critical temperature at which the film can undergo explosive crystallization. The film undergoes explosive crystallization upon subjecting the film to an energy impulse at temperature equal to or greater than the critical temperature.