Patents Assigned to Tosoh SMD
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Publication number: 20070158178Abstract: A system and method for physical vapor deposition (PVD) of dielectric material characterized by the conversion of a beam of positively charged ions into a beam of neutral particles, said beam of neutral particles being directed to bombard a sputtering target. In operation, sputtering targets comprised of low-k dielectric material can be successfully sputtered by such a beam of neutral particles, allowing for the integration of low-k dielectric materials into the on-chip wiring of semiconductor devices.Type: ApplicationFiled: July 22, 2003Publication date: July 12, 2007Applicant: Tosoh SMD, Inc.Inventor: Alexander Leybovich
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Publication number: 20070107185Abstract: A target and backing plate assembly and method of making the same. The backing plate is made of a material having an electrical conductivity less than or equal to 45% IACS and is selected from the group consisting of Al alloys, Cu alloys, magnesium, magnesium alloys, molybdenum, molybdenum alloys, zinc, zinc alloys, nickel and nickel alloys.Type: ApplicationFiled: July 13, 2004Publication date: May 17, 2007Applicant: TOSOH SMD, INC.Inventors: Robert Bailey, Melvin Holcomb
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Publication number: 20070007131Abstract: A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.Type: ApplicationFiled: May 30, 2006Publication date: January 11, 2007Applicant: Tosoh SMD, Inc.Inventors: David Smathers, Melvin Holcomb, Eric Land
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Patent number: 7146703Abstract: A sputtering target and a backing plate are diffusion-bonded with or without an insert or inserts interposed there-between so as to have a solid phase diffusion-bonded interface. The sputtering target substantially maintains its metallurgical characteristic and properties even though it has been diffusion-bonded to the backing plate. The solid-diffusion bonding of the target and backing plate, is achieved at a low temperature and pressure and results in interdiffusion of constituent atoms to attain high adhesion and bond strength without attendant deterioration or large deformation of the target material, while inhibiting the crystal growth in the target material. The bond undergoes no abrupt decrease in bond strength upon elevation of the service temperature. One hundred percent bonding is achieved with non-bonded portions such as pores left along the interface.Type: GrantFiled: December 17, 2001Date of Patent: December 12, 2006Assignee: Tosoh SMDInventor: Eugene Y. Ivanov
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Publication number: 20060266121Abstract: A method and apparatus for ultrasonically measuring the thickness of sputter targets of varying shapes. An immersion bubble (32) and transducer (36) provide pulses to a front surface (24) and a front surface/bonded surface (26) interface of a target. The pulses generate reflected echoes that are converted to electric signals. By measuring the difference in time that the electric signals occur the thickness of the target may be approximated to identify whether the thickness of the target is appropriate for use. The system includes a sputter track (15), specimen (20), chuck (28), nozzle (34), columns (60), opening (62), inlet (70), cable (58), gauge (59), turret (90), position (92), remote PC controller (110), electrical line (112), and rear part (84).Type: ApplicationFiled: April 21, 2004Publication date: November 30, 2006Applicant: Tosoh SMD, Inc.Inventor: Alexander Leybovich
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Patent number: 7114643Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).Type: GrantFiled: December 13, 2001Date of Patent: October 3, 2006Assignee: Tosoh SMD, Inc.Inventors: Eugene Y. Ivanov, Harry W. Conard
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Patent number: 7087142Abstract: The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.Type: GrantFiled: April 4, 2002Date of Patent: August 8, 2006Assignee: Tosoh SMD, Inc.Inventors: Charles E. Wickersham, Jr., John E. Poole, Alexander Leybovich, Lin Zhu
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Publication number: 20060166010Abstract: A composition and method for fabricating high-density Ta—Al—O, Ta—Si—N, and W—Si—N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.Type: ApplicationFiled: August 27, 2003Publication date: July 27, 2006Applicants: Tosoh SMD, Inc., Hewlett-Packard Co.Inventors: David Smathers, Frank Valent, Michael Regan
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Patent number: 7063773Abstract: A preferred sputter target assembly (10, 10?) comprises a target (12, 12?), a backing plate (14, 14?) bonded to the target (12, 12?) along an interface (22, 22?) and dielectric particles (20, 20?) between the target (12, 12?) and the backing plate (14, 14?). A preferred method for manufacturing the sputter target assembly (10, 10?) comprises the steps of providing the target (12, 12?) and the backing plate (14, 14?); distributing the dielectric particles (20, 20?) between mating surfaces (24, 26) of the target (12, 12?) and the backing plate (14, 14?), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12?) to the backing plate (14, 14?) along the mating surfaces (24, 26).Type: GrantFiled: August 17, 2001Date of Patent: June 20, 2006Assignee: Tosoh SMD, Inc.Inventors: Eugene Y. Ivanov, David B. Smathers, Charles E. Wickersham, Jr., John E. Poole
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Publication number: 20060118407Abstract: A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an alloy containing trace amounts, up to less than 4.39 wt % silicon, and preferably 2.0 wt % silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in conventional magnetron sputter processes, such that a target can be positioned near a cathode in the presence of an electric potential difference and a magnetic field in order to induce sputtering of nickel ions from the sputter target onto the substrate.Type: ApplicationFiled: April 29, 2004Publication date: June 8, 2006Applicant: Tosoh SMD, Inc.Inventor: Eugene Ivanov
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Publication number: 20060076234Abstract: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface (25) that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome (22) end of the sputter target (20) is comprised of a first crystallographic orientation and sidewalls (24) of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (?, ?1, ?2) in the target.Type: ApplicationFiled: September 12, 2003Publication date: April 13, 2006Applicant: Tosoh SMD, Inc.Inventors: Robert Bailey, Melvin Holcomb, David Smathers, Timothy Wiemels
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Publication number: 20060065517Abstract: Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) between the target and backing plate (18) in order to achieve intermetallic diffusion bonds between adjacent layers during a single HIP process. A mechanical interlock between the target (12) and backing plate is also achieved preferably during a single HIP process. In another instance, the target and backing plate are welded directly together by electron beam welding, and the interlayer and HIP process are omitted. In either case, the process for making the sputter target assembly is shortened, rendering it less expensive and subject to less failures, while achieving assemblies having robust strength.Type: ApplicationFiled: June 11, 2003Publication date: March 30, 2006Applicant: Tosoh SMD, Inc.Inventors: Eugene Ivanov, Harry Conard
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Publication number: 20050284746Abstract: A target (1) and backing plate (10) assembly and method of making the same. The target (1) and backing plate (10) assembly provides a mechanical interlock between the target (1) and backing plate (10) in addition to diffusion bonding between dissimilar materials comprising the target (1) and backing plate (10). An interlayer may also be used between the target (1) and backing plate (10). A plurality of ridges, or other salient surface features (3,4) on one of the target (1) and backing plate (10) are joined to corresponding members or channels (13, 14) on the other of the target and backing plate. The dissimilar materials of the target (1) and backing plate (10) fill negative angled cavities (13, 14) formed by the plurality of ridges (3, 4) and corresponding channels or members (13, 14) of the target (1) and backing plate (10) to accommodate the diffusion bonded dissimilar materials. A target (1) and backing plate (10) assembly with increased strength results.Type: ApplicationFiled: August 26, 2003Publication date: December 29, 2005Applicant: Tosoh SMD, Inc.Inventor: Eugene Ivanov
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Patent number: 6955852Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.Type: GrantFiled: December 16, 2004Date of Patent: October 18, 2005Assignee: Tosoh SMD, Inc.Inventor: Eugene Y. Ivanov
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Publication number: 20050155456Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 ?m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.Type: ApplicationFiled: February 23, 2005Publication date: July 21, 2005Applicant: Tosoh SMD, Inc.Inventors: Charles Wickersham, John Poole, Alexander Leybovich, Lin Zhu
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Patent number: 6895342Abstract: A preferred, non-destructive method for characterizing sputter target cleanliness includes the steps of sequentially irradiating the test sample with sonic energy predominantly of target sputter track areas; detecting echoes induced by the sonic energy; and discriminating texture-related backscattering noise from the echoes to obtain modified amplitude signals. These modified amplitude signals are compared with one or more calibration values so as to detect flaw data points at certain positions or locations where the comparison indicates the presence of at least one flaw. Most preferably, groups of the flaw data pixels corresponding to single large flaws are bound together so as to generate an adjusted set of flaw data points in which each group is replaced with a single, most significant data point. The adjusted set of flaw data point is used to calculate one or more cleanliness factors, or to plot a histogram, which characterizes the cleanliness of the sample.Type: GrantFiled: July 23, 2002Date of Patent: May 17, 2005Assignee: Tosoh SMD, Inc.Inventor: Alexander Leybovich
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Publication number: 20050092604Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.Type: ApplicationFiled: December 16, 2004Publication date: May 5, 2005Applicant: Tosoh SMD, Inc.Inventor: Eugene Ivanov
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Patent number: 6872284Abstract: A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.Type: GrantFiled: February 20, 2002Date of Patent: March 29, 2005Assignee: Tosoh SMD, Inc.Inventors: Eugene Y. Ivanov, David B. Smathers, Charles E. Wickersham, Jr., Lin Zhu
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Patent number: 6840427Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.Type: GrantFiled: September 11, 2001Date of Patent: January 11, 2005Assignee: Tosoh SMD, Inc.Inventor: Eugene Y. Ivanov
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Patent number: 6827759Abstract: The present invention relates to producing cobalt having a low oxygen and a low oxide inclusion content for use as a sputter target thereby reducing the arcing and metal defects during sputtering commonly associated with high-oxygen cobalt sputter targets. Notably, the method for reducing the oxygen content and the oxide inclusion content in cobalt are separate processes which may be combined in successive order to procuce a low-oxygen cobalt sputter target having a low oxide inclusion content. The reduction in oxygen content preferably is performed prior to reducing the oxide inclusion content. Accordingly, the artisan will appreciate that one process can be performed without the other depending upon whether a reduction in oxygen or oxide inclusions is preferred in a desired cobalt sputter target.Type: GrantFiled: January 29, 2003Date of Patent: December 7, 2004Assignee: Tosoh SMD, Inc.Inventor: Hao Zhang