Abstract: The interfacial joint area of a target/backing plate assembly is sealed so as to inhibit the migration of air and/or water vapor that may be present or trapped along the interfacial surfaces. A pool or bead of molten solder is placed along the interfacial joint and moved continuously around the full 360° circumference of the assembly so as to cover and seal the boundary area. The solder is melted, preferably, by e-beam welding in a vacuum or the like.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of projections are formed in the harder member of the assembly. The assembly is bonded by conventional techniques around the peripheral assembly boundaries. The assembly is then pressure consolidated at low temperature so that the projections, circumscribed by the bonded zone, penetrate into the softer member promoting the formation of metal to metal cold diffusion type bonds.

Abstract: An improved method and apparatus for non-destructive cleanliness evaluation in sputter targets using radio frequency waveform phase change and amplitude detection is disclosed. The apparatus acquires phase change and amplitude for a plurality of data points. The method disclosed for characterizing the sputter target material (52) employs the phase change and amplitude magnitude data for calculating cleanliness factors and generating pareto histograms.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of male projections (8) are formed in one member (2) of the assembly with a plurality of corresponding female recesses (9) formed in the other member (4). The assembly is bonded by conventional techniques around the peripheral boundary (25) that surrounds the male and female portions (8,9). The assembly is then pressure consolidated at low temperature so that the projections (8), circumscribed by the bonded zone, are force fit into the female recesses (9).

Abstract: A sputter target assembly including a high purity copper sputter target diffusion bonded to a backing plate, preferably composed of either aluminum, aluminum alloy, aluminum matrix composite materials, copper, or copper alloy, and a Ni-alloy interlayer, preferably composed of Ni—V, Ni—Ti, Ni—Cr, or Ni—Si, located between and joining the target and backing plate, and a method for making the assembly. The method of making involves depositing (e.g., electroplating, sputtering, plasma spraying) the interlayer on a mating surface of either the sputter target or backing plate and pressing, such as hot isostatically pressing, the sputter target and backing plate together along mating surfaces so as to form a diffusion bonded sputter target assembly.

Abstract: An improved method for joining mating surfaces of a metallic sputter target and a backing plate of aluminum, aluminum alloy or aluminum matrix composite material to form a sputter target/backing plate assembly comprises the steps of roughening the mating surface of either the sputter target or the backing plate to form a plurality of salient portions; depositing an intermediate layer comprising nickel on that mating surface; pressing the sputter target and the backing plate together along the mating surfaces so as to disrupt the mating surfaces; and holding the sputter target and the backing plate in contact at a temperature just below the melting points of the sputter target and backing plate materials to promote diffusion bonding. In an especially preferred form of the invention, the mating surface on the harder of the sputter target or the backing plate is roughened by machining a series of concentric grooves.

Abstract: Sputter target, method of manufacture of same and sputter coating process using the target as a sputtering source are disclosed. The sputter target comprises an Me/Si multi-phase, consolidated blend wherein the Si component is present in a very small amount of about trace—0.99 mole Si:1 mole Me. Preferably, Me comprises one or more of Ta, Ti, Mo, or W. The targets are made from the requisite powders via HIP consolidation to provide densities of greater than 98 % of the theoretical density. The targets are especially useful in reactive cathodic sputtering systems employing N2 as the reactive gas to form amorphous Me/Si/N layers.

Abstract: Low temperature diffusion bonding methods and target/backing plate assemblies bonded by the methods are disclosed. In accordance with the methods, copper and/or cobalt targets are bonded to backing plate members via the use of an interlayer selected from the group consisting of group Ib or group VIII metals. The interlayer is interposed between intended bonding surfaces of the target and the backing plate, and the assembly is diffusion bonded at low temperatures of about 190° C.-400° C. The method results in increased tensile strength of the bonded assembly while not, in the case of copper targets, resulting in undesirable grain growth. When cobalt targets are bonded in accordance with the invention, desirable magnetic properties, such as magnetic pass through flux, are maintained while a strong bond is achieved.

Abstract: A sputtering target (24) under test is irradiated with an ultrasonic pulse (20). The ultrasonic pulse (20) has a wavelength in the sputtering target (24) in the range of the average grain size for the target (24) under test. Backscattering echoes (28) are produced by the interaction of the pulse (20) with grain boundaries in the target (24) under test. The backscattering echoes (28) are detected and a representative electrical signal is generated. The number of occurrences of the backscattering echoes (28) having amplitudes within predetermined ranges are determined. A histogram of the number of occurrences versus amplitude is plotted. The histogram for the target (24) under test is compared with reference histograms for sputtering targets having known crystallographic orientations to determine the texture of the target (24) under test.

Abstract: A non-destructive method for characterizing a sputter target material comprises the steps of sequentially irradiating a test sample of the sputter target material with sonic energy at a plurality of positions on a surface of the sample; detecting echoes induced by the sonic energy; discriminating texture-related back-scattering noise from the echoes to obtain modified amplitude signals; comparing the modified amplitude signals with said at least one calibration value to detect flaw data points and no-flaw data points; counting the flaw data points to determine a flaw count; counting the total flaw data points and the no-flaw data points to determine a total number of data points and calculating a cleanliness factor.

Abstract: Method of forming a two-piece hollow cathode sputter target assembly and the assembly formed thereby. The sputter target assembly includes an outer shell having a substantially cylindrical side wall and is composed of a relatively low purity metallic material. A sputtering insert includes a substantially cylindrical side wall and is concentrically received within, and bonded to, the outer shell. The sputtering insert is composed of a relatively high purity metallic material as used for depositing a thin layer or film onto a desired substrate.

Abstract: A method for making a nickel/silicon sputter target, targets made thereby and sputtering processes using such targets. The method includes the step of blending molten nickel with sufficient molten silicon so that the blend may be cast to form an alloy containing no less than 4.5 wt .% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in a conventional magnetron sputter process; that is, one can be positioned near a cathode in the presence of an electric potential difference and a magnetic field so as to induce sputtering of nickel ion form the sputter target onto the substrate.

Abstract: Method of forming a two-piece hollow cathode sputter target assembly and the assembly formed thereby. The sputter target assembly includes an outer shell having a substantially cylindrical side wall and is composed of a relatively low purity metallic material. A sputtering insert includes a substantially cylindrical side wall and is concentrically received within, and bonded to, the outer shell. The sputtering insert is composed of a relatively high purity metallic material as used for depositing a thin layer or film onto a desired substrate.

Abstract: A process for treating substantially pure tantalum includes plastically deformed a billet, such as by side-forging or side-rolling, to reduce a first dimension of the billet transverse to the centerline, preferably by about 70% to about 85%. The billet is then upset, such as by upset forging or upset rolling, to reduce a second dimension of the billet transverse to the first dimension (for example, a second dimension lying parallel to the centerline), preferably by about 90% to about 99%. In accordance with an especially preferred process, the upsetting of the billet is followed by rolling along a plane normal to the second dimension. It has been found that billets prepared in accordance with the invention have grain sizes no greater than about 25 &mgr;m and predominantly <222> textures relative to their rolling planes, so that targets machined from such billets in such a way that their sputtering surfaces correspond with these rolling planes will have the same predominant <222> textures.

Abstract: A method of producing a sputter target assembly including a metal target attached to a metal-matrix-composite backing plate and sputter target assemblies made thereby. The method includes hot isostatically pressing a silicon carbide-aluminum powder composition to form a backing plate while simultaneously bonding the powder composition to a metal target to form a diffusion-type bond between the target and the backing plate such that the target assembly possesses extremely high resistance to warpage at high operating temperatures. A second embodiment of the sputter target assembly includes an annular sealing member of machined aluminum disposed in the backing plate around the target.

Abstract: A sputter target assembly includes a cobalt target diffusion bonded to an aluminum or copper backing plate by means of a titanium interlayer. The sputter target assembly may be made by hot vacuum pressing or, preferably, by hot isostatically pressing the target, interlayer and backing plate together. Preferably, the titanium interlayer is provided as a foil, but may also be formed on a mating surface of either the target or the backing plate by electroplating, sputtering, electroless plating, or plasma spraying. The target may be advantageously machined with grooves defining salient points prior to providing the interlayer.

Abstract: A preferred method for producing a pair of sputter targets includes the step of machining fist and second backing plates to form surfaces having near net profiles characteristic of an ion source, the sputtering material and the target shape. A preform is constructed which includes the first backing plate, a first powder layer abutting against the first backing plate, a spacer abutting against the first powder layer, a second powder layer abutting against the spacer, and the second backing plate abutting against the second powder layer. In an especially preferred form, the spacer comprises a pair of metal plates separated by a layer of bond-resistant material such as boron nitride. The preform is heated and isostatically pressed to consolidate the powder layers to form the pair of sputter targets and to diffusion bond the targets to corresponding backing plates. The method promotes the formation of uniformly even sputtering surfaces on the targets.

Abstract: Methods for making Cr-Me sputter targets wherein Me is a metal are disclosed. Preferably Me is a transition metal and most preferably is a member selected from the group consisting of Cu, Fe, and V. As a first step in the method, Cr and Me powder or crystals on the order of less than 100 mesh are provided. Preferably, the powders or crystals have a size of about 6-8 mesh. The Cr is present in a weight ratio amount of at least 50% Cr based upon the total combined weight of Cr and Me present. The Cr and Me components are then mechanically alloyed in a high energy ball mill or the like so as to provide an intimate mixture of powdered Cr-Me. The resulting powder is screened with, for example, a -20 -70 mesh screen, and then subjected to hot isostatic pressing (HIP) conditions to consolidate the powders at pressures of about 10,000 to 45,000 psi and temperatures of 800.degree. C. to 1500.degree. C. for about 1/4 to 5 hours.