Abstract: An apparatus for measuring the relative positions of frontside and backside alignment marks located on opposite sides of a substrate is disclosed. The apparatus includes upper and lower optical systems that allow for simultaneous imaging of frontside and backside alignment marks. The frontside and backside alignment mark images are processed to determine the relative position of the marks, as a measurement of the alignment and/or overlay performance of the tool that formed the marks on the substrate.

Abstract: The line imaging system includes a laser, first and second cylindrical optical systems with a first spatial filter disposed therebetween, a knife-edge aperture, a cylindrical relay system, and a cylindrical focusing lens. The first spatial filter is configured to truncate a line focus within the central lobe to form a first light beam. The second cylindrical lens system is arranged in the far field and is configured to perform spatial filtering to pass central intensity lobes of the first light beam while blocking outlying intensity lobes. The resultant twice-filtered light beam is has a relatively flat-top intensity distribution associated with the long direction of the line image so that subsequent truncation by the knife-edge aperture transmits more light than conventional line imaging systems. A laser annealing system that employs the line imaging system is also disclosed.

Abstract: Provided are apparatuses for processing a surface of a substrate using direct and recycled radiation reflected from the substrate. The apparatus includes a radiation source positioned to direct a radiation beam toward a beam image forming system that forms a beam image on the substrate surface and a recycling system. The recycling system collects radiation reflected from the substrate surface and redirects it back toward the beam image on the substrate in a +1× manner. As a result, radiation incident on and reflected from the substrate is recycled through multiple cycles. This improves the uniformity of the radiation absorbed by the substrate in instances where the thin film patterns on the substrate would otherwise result in non-uniform absorption and uneven heating. Exemplary recycling systems suitable for use with the invention include Offner and Dyson relay systems as well as variants thereof.

Abstract: Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.

Abstract: An apparatus for measuring the relative positions of frontside and backside alignment marks located on opposite sides of a substrate is disclosed. The apparatus includes upper and lower optical systems that allow for simultaneous imaging of frontside and backside alignment marks. The frontside and backside alignment mark images are processed to determine the relative position of the marks, as a measurement of the alignment and/or overlay performance of the tool that formed the marks on the substrate.

Abstract: An apparatus for measuring the relative positions of frontside and backside alignment marks located on opposite sides of a substrate is disclosed. The apparatus includes upper and lower optical systems that allow for simultaneous imaging of frontside and backside alignment marks. The frontside and backside alignment mark images are processed to determine the relative position of the marks, as a measurement of the alignment and/or overlay performance of the tool that formed the marks on the substrate.

Abstract: Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to reduce substrate warpage. When the substrates are semiconductor wafers having microelectronic devices; the orientation angles may be selected to produce controlled strain and to improve electronic performance of the devices.

Abstract: Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

Abstract: A coherent beam source, e.g., a laser having a cavity that is unstable in at least one direction, is used to produce a coherent beam having an initial intensity profile. The beam is passed through a relay having a Fourier plane containing a spatial filter that serves as a radiation defining mask. The filter has an aperture size and shape effective to modify the beam such that the modified beam forms an image on a substrate. The to image has an intensity profile that more closely approximates a super-Gaussian profile than the initial profile. For example, when the initial intensity profile is Gaussian, the spatial filter may allow passage of only unattenuated the central core of the beam and block completely blocks the wings of the Guassian profile. The modified beam may be more suitable for use in a scanning system used to anneal wafers or other substrates containing integrated circuits.

Abstract: Methods and apparatus for remotely measuring temperature of a specular surface. Method takes two measurements of P-polarized radiation emitted at or near Brewster angle from the surface. First measurement (SA) collects and detects first amount of radiation emitted directly from a surface portion using a collection optical system. Second measurement (SB) includes first amount of radiation and adds quantity of radiation collected at or near at/near Brewster angle and reflected from the surface with a retro optical system with a round-trip transmission t2 that retro-reflects a quantity of radiation received from surface portion back to same surface portion where it reflects and combines with first amount of radiation collected by collection optical system. Measurements SA and SB and t2 are used to determine surface emissivity (?). Calibration curve is used that relates ratio of the first measurement SA to surface emissivity (SA/?), to surface temperature.

Abstract: A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.

Abstract: Methods and apparatuses are provided for positioning a substrate having a target that may be located on either the front-side or the backside of the substrate. The optical detector that views the target contains a signal-generating material that is substantially identical to the substrate material.

Abstract: Provided is an apparatus for substrate processing. The apparatus may include a radiation source emitting a photonic beam, an optical system to form a beam image, a scanning stage, a temperature monitoring means, an output signal generator that compares the monitored temperature with a preset temperature, and a controller coupled to the radiation source and the stage. The stage may be adapted to scan the substrate so the beam image heats a region of the substrate surface, and the temperature monitoring means may collect and analyzes p-polarized radiation of at least three different spectral regions emitted from one or more places on the heated substrate region. The controller in response to a temperature error signal may be programmed to alter the beam intensity and/or to provide changes in the scanning velocity between the stage and the beam. Other apparatuses and temperature monitoring systems are provided as well.

Abstract: A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam.

Abstract: Methods for forming a denuded zone in an oxygen-containing semiconductor wafer using rapid laser annealing (RLA) are disclosed. The method includes scanning an intense beam of laser radiation over the surface of the wafer to raise the temperature of each point on the wafer surface to be at or near the wafer's melting temperature for a time period on the order of a millisecond or so. This rapid heating and cooling causes oxygen in the wafer near the wafer surface to diffuse out from the wafer surface. Oxygen in the body of the wafer remains unheated and thus does not diffuse toward the wafer surface. The result is an oxygen-depleted zone—called a “denuded zone”—formed immediately adjacent the wafer surface. The methods further include forming a semiconductor device feature in the denuded zone such as by implanting the wafer with dopants.

Abstract: Parallel data bus architecture, lithography system and method for substrate patterning with a high-resolution image by data generation transferring, display or printing high edge placement accuracy images from multiple exposures of plurality of predefined patterns with lower edge placement accuracy. Data bus architecture includes n predetermined patterns in n memory arrays each storing a low resolution pattern to be formed onto microelement array with a data bus connecting memory arrays to an image transducer memory array. Data bus includes switches allowing data transfer from any one memory array to the image transducer array with a memory control unit connected to memory arrays and one or more data bus switches so 2m?1 columns of pattern data stored in the mth memory array are sequentially transferred to 2m?1 memory cell columns of the image transducer memory array, m an integer begging at 1 incremented by 1 to n.

Abstract: Methods and systems for performing laser thermal processing (LTP) of semiconductor devices are disclosed. The method includes forming a dielectric cap atop a temperature-sensitive element, and then forming an absorber layer atop the dielectric layer. A switch layer may optionally be formed atop the absorber layer. The dielectric cap thermally isolates the temperature-sensitive element from the absorber layer. This allows less-temperature-sensitive regions such as unactivated source and drain regions to be heated sufficiently to activate these regions during LTP via melting and recrystallization of the regions, while simultaneously preventing melting of the temperature-sensitive element, such as a poly-gate.

Abstract: An apparatus for measuring the relative positions of frontside and backside alignment marks located on opposite sides of a substrate is disclosed. The apparatus includes upper and lower optical systems that allow for simultaneous imaging of frontside and backside alignment marks. The frontside and backside alignment mark images are processed to determine the relative position of the marks, as a measurement of the alignment and/or overlay performance of the tool that formed the marks on the substrate.

Abstract: A method and apparatus for performing laser thermal processing (LTP) using one or more two-dimensional arrays of laser diodes and corresponding one or more LTP optical systems to form corresponding one or more line images. The line images are scanned across a substrate, e.g., by moving the substrate relative to the one or more line images. The apparatus also includes one or more recycling optical systems arranged to re-image reflected annealing radiation back onto the substrate. The use of one or more recycling optical systems greatly improves the heating efficiency and uniformity during LTP.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.