Abstract: The present invention relates to the technical field of power semiconductor devices, particularly to an insulated gate bipolar transistor with a MOS controllable hole path. According to the present invention, a MOS controllable gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel region are embedded in a P+ floating p-body region of the conventional IGBT structure. The MOS region is equivalent to a switch controlled by a gate voltage. When the device is turned on under a forward voltage, the potential of the p-body region is floated to store holes, reducing the saturation conduction voltage drop of the device. Under the condition of turn-off and short-circuit, the hole extracting path is provided and the Miller capacitance is lowered, thereby lowering the turn-off losses and enhancing the short-circuit withstand capability.

Abstract: A method for measuring equivalent circuit parameters and resonant frequency of a piezoelectric resonator, by which the phase-frequency curve of the piezoelectric resonator is measured, and the resonant frequency and the anti-resonant frequency are obtained. Then, the slopes of the phase-frequency curve at the resonant frequency and the anti-resonant frequency are respectively measured. The resonant angular frequency and the anti-resonant angular frequency are also calculated. Finally, the equivalent circuit parameters of the piezoelectric resonator are obtained by solving a system of nonlinear equations.

Abstract: A random distributed Rayleigh feedback fiber laser based on a double-cladding weakly ytterbium-doped fiber includes: a pump laser source, a pump combiner, a cladding power stripper, and a double-cladding weakly ytterbium-doped fiber for simultaneously achieving distributed active gain and random distributed Rayleigh feedback. An output end of the pump combiner is connected with one end of the double-cladding weakly ytterbium-doped fiber, the other end of the double-cladding weakly ytterbium-doped fiber is connected with an input end of the cladding power stripper, and a concentration of ytterbium ions in the double-cladding weakly ytterbium-doped fiber is in a range of 0.5×1023 to 1×1025/m3. The laser provided by the present invention solves the problem that the existing random fiber lasers cannot simultaneously utilize distributed active gain and random distributed Rayleigh feedback with a single type of fiber.

Abstract: A speckle-free imaging light source based on a random fiber laser (RFL) using a strong-coupling multi-core optical fiber, relating to a field of optical fiber laser illumination light source, is provided, mainly including a pumping source and an optical fiber loop mirror, and further including the strong-coupling multi-core optical fiber with/without a single-mode optical fiber. Through directly adopting the strong-coupling multi-core optical fiber or combining the single-mode optical fiber with the strong-coupling multi-core optical fiber to serve as a main device in the RFL-based illumination light source, the generated RFL has multiple transvers modes and low spatial coherence which prevent speckle formation during illumination, which provides an ideal illumination light source for high-speed full-field speckle-free imaging technology.

Abstract: A distributed optical fiber sensing signal processing method for safety monitoring of underground pipe network, which belongs to infrastructure safety monitoring field, which is aimed to improve the intelligent ability of detection and identification of the existing distributed optical fiber sound/vibration sensing system under complex application conditions. The present invention utilizes the distributed optical fiber sound/vibration sensing system to pick up the sound or vibration signal of the whole line along the detection cable; and the customized short time feature and long time feature are respectively extracted from the relative quantity of the sound or the vibration signal at each spatial point in the whole monitoring range. The Bayesian identification and classification network at each spatial point is constructed and trained based on the prior knowledge of the collected signal features and their different background noises.

Abstract: A BIPOLAR-CMOS-DMOS (BCD) semiconductor device and manufacturing method, which can integrate a Junction Field-Effect Transistor (JFET), two classes of Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS), a Lateral Insulated-Gate Bipolar Transistor (LIGBT) and seven kinds of Laterally Diffused Metal Oxide Semiconductor (LDMOS), a low-voltage Negative channel Metal Oxide Semiconductor (NMOS), a low-voltage Positive channel Metal Oxide Semiconductor (PMOS), a low-voltage Negative-Positive-Negative (NPN) transistor and a low-voltage Positive-Negative-Positive (PNP) transistor, and a diode in the same chip. Bipolar devices in the analog circuit, power components in the switch circuit, Complementary Metal Oxide Semiconductor (CMOS) devices in the logic circuit and other kinds of lateral and vertical components are integrated. This present invention saves costs at the same time greatly improve chip integration.

Abstract: A method of improving measurement speed of distributed optical fiber sensors by adopting orthogonal signals and the system thereof is disclosed, which is related to the optical fiber sensor field and solves the problems that conventional technology will increasing the bandwidth of the received signal, reducing the signal-to-noise ratio of the received signal or distortion the spatial resolution of the system. The method comprises steps of generating N periodic orthogonal optical pulse sequence; injecting the N periodic orthogonal optical pulse sequence into the optical fiber under test(5); collecting the scattered light signal; demodulating the scattered light signal with the local oscillating light and then converting into digital signals; extracting the scatter information of the orthogonal optical pulses from the collected digital signals; and arranging the scattered information in order of precedence of the infusion. The measurement speed of the distributed optical fiber sensors is improved by N?1 times.

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.

Abstract: The present disclosure is related to the microwave measuring field, and in particularly to a coaxial resonant cavity and system and method for measuring the dielectric constant of material. The coaxial resonant cavity includes a coupling mechanism and a cavity body. The coupling mechanism is accommodated in the cavity body for exciting or coupling microwaves inside the cavity body. The coaxial resonant cavity further includes a probe extending out of the cavity body and being coaxial with the cavity body. The cavity body is shaped as an annular column, and a ratio of an outer radius of the annular column to an inner radius of the annular column is (3-5):1. The present disclosure still provides a system and method for measuring the dielectric constant of material using the coaxial resonant cavity.

Abstract: A carbon material-polymer strain sensitive film and its preparation method are disclosed. The carbon material-polymer strain sensitive film includes multiple layers of carbon sensitive films and multiple layers of polymer films, wherein the multiple layers of carbon sensitive films and the multiple layers of polymer films form a multi-layer composite film in sequence through a layer-by-layer assembly process. The preparation method includes steps of: cleaning, processing a hydrophilic treatment and processing a hydrophobic treatment on a rigid substrate in sequence; preparing a carbon material in dispersion solution and a polymer dispersion solution; through a layer-by-layer self-assembly process, growing the polymer and the carbon material in a form of layer-by-layer on the rigid substrate; transferring the composite film from the rigid substrate to a flexible substrate; and pasting two electrodes at two ends of the composite film and encapsulating with a flexible film.

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: The present invention discloses CrN thermoelectric material and its preparation method, which belongs to the field of thermoelectric materials. Here, we provide a study for thermoelectric properties, hardness, wear-resisting performance and thermal stability of CrN. These results show that CrN possesses excellent mechanical properties and thermal stability. The hardness of the bulk CrN sample is as high as 735.76 HV, which is far superior to most of thermoelectric materials. The thermogravimetric analysis test indicates that CrN remain stable at 873 K. Friction and wear test results demonstrate that the low friction coefficient (˜0.42) and good wear resistance of CrN. The maximum ZT value of 0.104 is observed at 848 K. In this way, CrN may be a promising thermoelectric material in extreme environment application which requires both mechanical and thermoelectric properties. Such as collision avoidance systems and outerspace.

Abstract: The present invention provides a response message processing method, apparatus, and system, and relates to the communications field. The method includes: sending, according to a device identifier sent by a request device, a query request to a destination device corresponding to the device identifier, so that the destination device returns a response message according to the query request; generating substitution data when an error occurs in the response message, where the substitution data is associated with resource data requested by the query request and is used to substitute for the resource data requested by the query request; and sending response substitution information to the request device, where the response substitution information includes the substitution data and the device identifier.

Abstract: The present invention provides a method for 3D waveform mapping of full-parallel structure, first, a 3D waveform mapping database is created according to the size of a 3D waveform image, the number of bits of probability value and the ADC's resolution of data acquisition module, then the 3D waveform mapping database is divided into Mt×Ma independent mapping storage areas along the time axis and the amplitude axis, and each independent mapping storage area is assigned a RAM, then RAMs are selected and addresses are calculated based on the sampling values and the structure of created 3D waveform mapping database, finally, parallel mappings are performed simultaneously on the time axis and the amplitude axis according to the selected RAMs and calculated addresses. Thus, the mapping time are shorten, especially in vector mapping mode, several RAMs are used for mapping, so the WCR of DSO is improved.

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: A hybrid distributed amplification method based on a random fiber laser generated within erbium fiber with low doping concentration, i.e. weak erbium-doped fiber (WEDF), which includes: Step 1. constructing a fiber link via WEDF; Step 2. generating the random fiber laser based on the fiber link, the pump source, the wavelength division multiplexer and the strong feedback module; Step 3. constructing the spatial equalized gain based on hybrid gain of the erbium fiber and random fiber laser; Step 4. the signal is amplified by the hybrid spatial equalized gain. The present invention solves the typical problem of high laser threshold and low pump conversion efficiency when conventional fiber is used to generate random fiber laser for distributed amplification.

Abstract: The present invention relates to the technical field of synthetic aperture radar, and in particular to a ground-based interference synthetic aperture radar-based atmospheric phase compensation method. The present invention first uses the inverse fast Fourier transform algorithm to rapidly and effectively realize the focusing in the range and cross-range dimension. Then a triple threshold method which combines coherence coefficient, amplitude, and amplitude dispersion index is used to select reliable PS points. Finally, under a full consideration of the spatial correlation of the atmospheric phase, the atmospheric phase is estimated by using a two-dimensional-polynomial model. The present invention can rapidly and accurately estimate and compensate the atmospheric phase, is helpful in improving the accuracy of GB-InSAR real-time measurement, and valuable and universal in practical application.

Abstract: An optical-readout synaptic device based on SiOxNy and a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNx dielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNx dielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.

Abstract: The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.

Abstract: A left-handed material extended interaction klystron includes: an input cavity, a middle cavity, an output cavity, first-section drift tube and a second-section drift tube; wherein the input cavity, the middle cavity and the output cavity are all cylindrical resonant cavities having arrays of Complementary electric Split-Ring Resonator (CeSRR) unit cells provided therein; wherein a first side of the input cavity is an input channel of an electron beam, a second side connects the middle cavity via the first-section drift tube; a first T-shaped coaxial input structure is provided in the input cavity; a first side of the output cavity is for connecting a collector, a second side of the output cavity connects the middle cavity via the second-section drift tube, a second T-shaped coaxial output structure is provided in the output cavity.