Abstract: A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe of the SPM and a sample to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.

Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) including oscillating a probe of the SPM at a torsional resonance of the probe, and generally simultaneously measuring an electrical property, e.g., a current, capacitance, impedance, etc., between a probe of the SPM and a sample at a separation controlled by the torsional resonance mode. Preferably, the measuring step is performed while using torsional resonance feedback to maintain a set-point of SPM operation.

Abstract: A drive actuator for a measurement instrument having a probe, the drive actuator including a heating element in a thermally conductive relationship with the probe such that application of electric current to the heating element modifies a characteristic of the probe. The probe device includes a probe including a cantilever having a lever made of a material having a selected thermal expansivity and a drive actuator in operable cooperation with the cantilever lever made of a material having a thermal expansivity different than the thermal expansivity of the material of which the cantilever lever is made.

Abstract: A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.

Abstract: A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

Abstract: Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.

Abstract: An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode workable across varying environments, including gaseous, fluidic and vacuum.

Abstract: A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract: Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

Abstract: A method of making a probe having a cantilever and a tip include providing a substrate having a surface and forming a tip extending substantially orthogonally from the surface. The method includes depositing an etch stop layer on the substrate, whereby the etch stop layer protects the tip during process. A silicon nitride layer is then deposited on the etch stop layer. An etch operation is used to release the cantilever and expose the etch stop layer protecting the tip. Preferably, the tip is silicon and the cantilever supporting the tip, preferably via the etch stop layer, is silicon nitride. A probe for a surface analysis instrument made according to the method includes a tip and a silicon nitride cantilever having a thickness defined during the deposition process.

Abstract: A method of extracting the shape of a probe tip of a probe-based instrument from data obtained by the instrument is provided. The method employs algorithms based on the principle that no reconstructed image points can physically occupy the same region as the tip during imaging. Sequential translates of the tip shape or volume sweep out an area or volume that is an “exclusion zone” similar to morphological erosion. The embodiments of the alternative method use either the region defined by the tip boundary or simply the tip boundary.

Abstract: In chemical vapor deposition apparatus, a water carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.

Abstract: A method and apparatus of engaging a probe with a sample surface including automatically reducing the spacing between a probe of a probe based instrument and a sample from an initial separation to one in which the probe is positioned for obtaining a sample surface measurement in less than ten seconds without damaging either the probe or the sample. The method includes oscillating the probe, measuring at least one parameter of probe oscillation and then engaging the probe and the sample by generally continuously controlling the reducing step based on the measuring step to reduce the separation from an initial separation to an engage position. In addition to feeding back directly on the tip-sample interaction, a direct communication line is provided between the processor used to generate control signals that govern the engage and a conventional motion controller.

Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.

Abstract: A probe instrument having a probe that interacts with a sample surface to perform a mechanical property measurement at high speed includes a scanner producing relative motion between the sample and the probe. In addition, a probe actuator produces relative motion between the sample and the probe, in a generally vertical direction, and a controller that generates a scanner drive signal and an actuator drive signal. The probe actuator is responsive to the actuator drive signal and has an operable bandwidth of at least about 50-80 kHz to perform the fast force curve measurements. The probe actuator is preferably located at least partially on the cantilever. Moreover, feedback during normal operation may be interrupted to perform a force curve measurement with the integrated actuator.

Abstract: An illumination system for an interferometer combines a white-light source and a green source with a reflective green dichroic filter. When the green source alone is energized for PSI measurements, the output of the illumination system is green only. When a white-light output is desired for VSI measurements, both sources are energized and the intensity of the green light is judiciously calibrated to match the spectral band filtered out by the dichroic mirror. Therefore, the system can switch between green and white light simply by changing the selection of energized sources, without any mechanical switching and attendant delays and vibrations. Multiple narrowband sources may be combined with white light in a similar manner.

Abstract: A method and apparatus are provided for monitoring motion of a scanning probe microscope (SPM) actuator using an improved optical displacement sensor (ODS) including a light emitter, an intensifier, and a photodetector. One of these three devices, most preferably the intensifier, is preferably movable with the actuator and relative to the other two devices. The intensifier intensifies the light incident on the detecting face of the photodetector, increasing the sensitivity of the ODS and improving the ability of the SPM to translate the actuator in the desired manner. The photodetector preferably is a split diode or a quad diode photodetector. The light emitter includes at least a light source such as an LED and may additionally include an aperture that limits the light passing therethrough to that which contributes to the displacement signal, thereby reducing shot noise and increasing the signal-to-noise ratio.

Abstract: A method and apparatus for its practice are provided of differentiating at least one component of a heterogeneous sample from other component(s) using harmonic resonance imaging and of obtaining information regarding the sample from the differentiation. In a preferred embodiment, an image is created of a property of a harmonic or a combination of a harmonics producing a response having a contrast factor between the sample's constituent components. The desired harmonic(s) can be identified either in a preliminary data acquisition procedure on the sample or, if the sample's constituent components are known in advance, predetermined. The desired harnonic(s) may be identified directly by the user or automatically through, e.g., pattern recognition. A compositional map may then be generated and displayed and/or additional information about the sample may be obtained.

Abstract: Thin-film thickness and refractive index are measured using the Fourier amplitude of a broadband interferometric spectrum. Due to the smooth nature of the Fourier amplitude as a function of wavelength, as compared to the fast varying Fourier phase conventionally used to measure thickness, increased stability and repeatability of measurement are achieved. As a result, measurements of ultra-thin films with thickness below 100 nm are possible with reliable results.