Abstract: Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Abstract: A lapping tool for lapping a wafer section in a well controlled manner, has a head with an actuator for bending the row tool, and a force multiplier coupled between the actuator and row tool to multiply the force generated by the actuator for application of greater bending force to the row tool than can be generated by the actuator. Furthermore, at least two actuators, which are controlled together, simultaneously apply force to one force multiplier, so as to further increase bending force. The increase in available force permits the use of a row tool of a ceramic or other material that is substantially stiffer than stainless steel, such as a row tool having a coefficient of thermal expansion that is substantially similar to that of the rowbar itself. The tool further includes structures for tilting or otherwise orienting the wafer section relative to the lapping plate.

Abstract: A method of processing wafers in a rotating disc CVD reactor uses wafer carrier having a unitary plate defining wafer-holding features such as pockets on its upstream surface. The carrier connects to the spindle of the reactor during processing. After processing the carrier and wafers in the reactor, the wafers are removed from the carrier. The carrier is renewed by removing the hub from the plate, cleaning the plate and then reassembling the plate with the same or a different hub.

Abstract: A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element.

Abstract: A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

Abstract: A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections.

Abstract: An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Abstract: The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.

Abstract: The presently disclosed technology provides a responsive ion beam source power supply system capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system to desired user settings.

Abstract: Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Abstract: Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.

Abstract: An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

Abstract: A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids.

Abstract: Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly.

Abstract: An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

Abstract: A heater for a heating system of a chemical vapor deposition process includes a relatively highly emissive body and an electrically conductive heating element disposed within a passageway in the body. The heating element is constructed to melt below an operating temperature of the heater. The passageway is constructed to retain the melted heating element in a continuous path, so that an electrical current along the heating element may be maintained during operation of the heater. Various shapes and arrangements of the passageway within the body may be used, and the heating system may be constructed to provide multiple, independently controllable temperature zones.

Abstract: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

Abstract: A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.