Abstract: A broadband interferometric vertical scan of a sample surface is performed to produce interference data in conventional manner. A coarse surface profile of the surface is obtained in real time using a conventional technique, such as a center-of-mass calculation. A fine surface map is obtained concurrently using a quadrature-demodulation algorithm applied in real time to the same interference data used for the coarse surface calculation. The fine surface map is then combined with the coarse surface profile using an unwrapping technique that produces a final surface map with sub-nanometer resolution within a large height range.

Abstract: A cantilever probe-based instrument is controlled to counteract the lateral loads imposed on the probe as a result of probe sample interaction. The probe preferably includes an active cantilever, such as a so-called bimorph cantilever. Force counteraction is preferably achieved by monitoring a lateral force-dependent property of probe operation such as cantilever free end deflection angle and applying a voltage to at least one of the cantilever and one or more separate actuators under feedback to maintain that property constant as the probe-sample spacing decreases. The probe could further uses at least one of contact flexural and torsional resonances characteristics to determine contact and release points. With the knowledge of the tip profile, quantitative mechanical data for probe sample interaction can be obtained.

Abstract: An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Abstract: Dynamic nanomechanical analysis of a sample is performed by using a cantilever probe that interacts with the sample using a force applied across a wide range of frequencies that includes frequencies greater than 300 Hz. The motion of the cantilever probe is detected in response to the applied force over the range of frequencies and analyzed over at least a portion of the wide range of frequencies to determine a mechanical response of the sample, preferably including quality factor and modulus of the sample. The analysis of the motion of the cantilever probe is preferably performed in terms of amplitude, phase, and frequency of both the probe and the sample and preferably, where the applied force is analyzed to determine both a real and an imaginary modulus of a mechanical response of the sample. Preferably, the force is applied so as to produce a minimum of phase and amplitude response variation in the absence of the sample.

Abstract: A method of operating a scanning probe microscope includes using a probe having a cantilever, and oscillating the probe at a torsional resonance frequency thereof. In addition, the method includes substantially increasing torsional drive efficiency with dual actuators disposed on the probe or the probe base. First and second actuators may be driven by corresponding first and second drive signals, the first and second drive signals being about 180° out of phase. The maximizing step includes altering at least one of the amplitudes of the first and second drive signals to maximize torsional oscillation. Torsional and flexural oscillation of the cantilever probe can be excited concurrently, sequentially or independently by adjusting the phase of the corresponding drive signals. A pair of cantilever components can be used to form a nanotweezer by rotating the respective arms having corresponding tip portions at the distal ends.

Abstract: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate and forming a tip stock extending upwardly from the substrate. The tip stock is preferably FIB milled to form a tip of the probe device. The tip preferably has a high aspect ratio, with a height that is at least about 1 micron for performing critical dimension (e.g., deep trench) atomic force microscopy. The stock is preferably pedestal shaped having a distal end that is substantially planar which can be machined into a tip in at least less than about 2 minutes. With the preferred embodiments, the FIB milling step can be completed in substantially fewer and less complicated steps than known techniques to produce a high aspect ratio tip suitable for DT-AFM in less than about one minute.

Abstract: A method for monitoring the curvature of a surface of a body such as a semiconductor wafer (22) includes directing a beam of light along an impingement axis (36) onto the surface so that a beam of light (41) is reflected from the surface at a point of impingement. The position of the reflected beam (41) is detected in two dimensions (x,y). The body (22) is moved relative to the impingement axis (41) in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.

Abstract: One or more thermal transfer sheets are easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal transfer sheets, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal transfer sheets may be interposed between the consumable components within the anode assembly. The thermal transfer sheets may be thermally conductive and either electrically insulating or conductive.

Abstract: An explicit relationship is developed between the ratio of average interferometric modulation produced by diamond-like carbon (DLC)-coated magnetic-head surfaces and the thickness of the DLC layer. Accordingly, the thickness of the DLC layer is calculated in various manners from modulation data acquired for the system using object surfaces of known optical parameters.

Abstract: A system and method for measuring sample material properties by coherently averaging cantilever free-decay signals in a scanning probe microscope is described.

Abstract: Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

Abstract: A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate.

Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

Abstract: A scanning probe microscope and method of operation for monitoring and assessing proper tracking between the tip and sample, as well as automating at least some aspects of AFM setup previously done manually. Preferably, local slopes corresponding to the acquired data are compared to determine a tracking metric that is self-normalizing.

Abstract: An interferometric intensity equation includes parameters that depend on bandwidth and numerical aperture. An error function based on the difference between actual intensities produced by interferometry and the intensities predicted by the equation is minimized iteratively with respect to the parameters. The scan positions (i.e., the step sizes between frames) that minimized the error function are then used to calculate the phase for each pixel, from which the height can also be calculated in conventional manner. As a result, the phase map generated by the procedure is corrected to a degree of precision significantly better than previously possible.

Abstract: A flexure carriage assembly (24) has a carriage (25) formed of a substantially rigid material. The carriage has four elongate columns (32A, 32B, 32C, 32D) arranged spaced apart and parallel to one another. Each of the elongate columns has first and second ends. The flexure carriage (25) has four first cross members disposed between adjacent pairs of elongate columns and arranged to interconnect the first ends. The flexure carriage also includes four second cross members (38A-D) arranged between adjacent pairs of elongate columns and arranged to interconnect the bottom ends. The elongate columns and first and second cross members define a three-dimensional rectangular structure. The flexure carriage also has disposed centrally between the four elongate columns a translating section (29) spaced equidistant between the first and second ends of the columns.

Abstract: A method of operating a probe based instrument includes a light source that generates and directs a beam of light towards a probe of the instrument to detect a property of probe deflection. The method automatically adjusts the position of the light beam on the probe based on movement of the probe by a Z actuator so as to eliminate apparent parasitic deflection of the probe. A light source assembly for detecting deflection of a probe preferably includes a base, a tip/tilt stage mounted on the base and a light source supported by the tip/tilt stage. The tip/tilt stage includes at least one electrically actuated fine adjustment actuator that controls the tip/tilt stage, preferably independently of movement of the AFM scanner used to move the probe.

Abstract: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

Abstract: An interferometric intensity equation includes parameters that depend on bandwidth and numerical aperture. An error function based on the difference between actual intensities produced by interferometry and the intensities predicted by the equation is minimized iteratively with respect to the parameters. The scan positions (i.e., the step sizes between frames) that minimized the error function are then used to calculate the phase for each pixel, from which the height can also be calculated in conventional manner. As a result, the phase map generated by the procedure is corrected to a degree of precision significantly better than previously possible.

Abstract: A gas distributor is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the gas distributor, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The gas distributor may be mounted to a thermal control plate in the anode assembly with several set screws. The gas distributor may be disk-shaped with counterbores in a surface to recess the heads of the set screws. Alternately, the gas distributor may be clamped or held in place by other structures or components of the ion source.