Abstract: There is provided a novel optical sensor utilizing a surface plasmon resonance technique which is capable of detecting a substance to be detected with high sensitivity independently of a wavelength of irradiated light and is capable of obtaining information, other than a refraction index, on the substance to be detected. At the center of a surface of a metallic film 2 which is formed on a substrate and has no aperture, a circular depression 4 with a diameter of 0.1 to 250 nm is formed and with the depression 4 defined as a center, a plurality of depressions 3 are concentrically formed at intervals of 450 to 530 nm.

Abstract: Provided is a multiprocessor system and a compiler used in the system for automatically extracting tasks having parallelism from an input program to be processed, performing scheduling to efficiently operate processor units by arranging the tasks according to characteristics of the processor units, and generating codes for optimizing a system frequency and a power supply voltage by estimating a processing amount of the processor units.

Abstract: A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

Abstract: A hearing aid device for processing an input sound signal via a microphone so as to output a sound signal from an earphone comprises a signal processing element, a couple of acoustic nerve excitation pattern calculation elements, a couple of acoustic filter shape memory elements, a comparison element, a correction processing element, etc. The couple of acoustic nerve excitation pattern calculation elements calculate acoustic nerve excitation patterns of a normal hearing person and a hearing impaired person based on an output signal of the signal processing element and acoustic filter shapes of the normal hearing person and the hearing impaired person which are stored in the couple of acoustic filter shape memory elements. Each of the acoustic nerve excitation patterns is compared via the comparison element.

Abstract: A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode.

Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Abstract: A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.

Abstract: To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary. An n-side electrode 20 including at least a Ti layer is formed on a lower surface of an n-type ?-Ga2O3 substrate 2 by utilizing a PLD method. This n-side electrode 20 has ohmic characteristics at 25° C. The n-side electrode 20 may have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.

Abstract: A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.

Abstract: The present invention provides an amphiphilic molecule having a plurality of zwitterionic functional groups in its hydrophilic moiety and a molecular assembly comprising the amphiphilic molecule as a constituent lipid. According to a preferred embodiment of the present invention, the molecular assembly of the present invention forms a stable vesicular structure under a physiological pH environment to carry a substance of interest in the vesicular structure, and can release the substance of interest to the outside of the vesicular structure when it is deformed under an acidic pH environment. The molecular assembly of the present invention can be used as a carrier for a drug, a probe, a nucleic acid, a protein or the like.

Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate.

Abstract: A robotic device includes a first link portion, a second link portion that moves relative to the first link portion, a first contact load detecting portion that detects a contact load in a contact area of the first link portion, a second contact load detecting portion that detects a contact load in a contact area of the second link portion, and a first link portion control target setting portion that sets a control target for the first link portion. The first link portion control target setting portion sets the control target for the first link portion such that the difference between the detection value of the contact load of the first contact load detecting portion and the detection value of the contact load of the second contact load detecting portion decreases.

Abstract: To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a ?-Ga2O3 system single crystal can be efficiently controlled. The light emitting element includes an n-type ?-Ga2O3 substrate, and an n-type ?-AlGaO3 cladding layer, an active layer, a p-type ?-AlGaO3 cladding layer and a p-type ?-Ga2O3 contact layer which are formed in order on the n-type ?-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10?3 to 8×102 ?cm and a carrier concentration is controlled to fall within the range of 5.5×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10?5 to 1 mol %.

Abstract: A tonometry device includes a contact device for contacting the object, means for vibrating the contact device and the object, means for applying a voltage to the vibration means, means for measuring a current flowing through the vibration means, and an information processing means. The information processing means determines two resonance points of the device and the measured object by measuring current through the system at a plurality of vibrational frequencies. The information processing means then determines the internal pressure of the object by determining that a first pressure is higher than a second pressure by determining that the first pressure has a lower measured current than the second pressure at frequencies outside of the range of frequencies between the resonance points, and that the first pressure has a higher measured current than the second pressure at frequencies within the range of frequencies between the resonance points.

Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: A sample atomic configuration creation means (211) in a control section (21) creates the atomic arrangement data of a sample, and a sample surface height calculation means (212) calculates a sample surface height for every mesh. A probe profile creation means (213) creates the atomic arrangement data of a probe, and a probe surface height calculation means (214) calculates the height of the probe surface for every mesh. A probe scanning means (216) supplies the coordinate of a scanning start position in the scanning range to a collision height specification means (215). The collision height specification means (215) calculates the distance between the sample surface and the probe in each mesh. Calculation of this distance is repeated for all meshes of the probe at the coordinate of this measuring position.

Abstract: A process for preparing polyphenylene ether by oxidizing phenols using water as a solvent, enabling polyphenylene ether to be prepared with only a small amount of oxidizer, while making it possible to reuse a solvent after reaction repeatedly. Water is used as the solvent. Phenols are oxidized under the presence of a water-soluble metal complex catalyst. For the water-soluble metal complex catalyst, it is preferable to use the one whose central metal is copper or manganese, having an amine multidentate ligand.

Abstract: A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.

Abstract: The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier layer is interposed between the substrate and the copper layer, and the barrier layer is formed by electroless plating. And the laminated structure is characterized in that the barrier layer is formed on the substrate with a monomolecular layer of organosilane compound and a palladium catalyst which are interposed between the substrate and the barrier layer, the palladium catalyst modifies the terminal, adjacent to the barrier layer, of the monomolecular layer, and the barrier layer includes an electroless NiB plating layer which is disposed on the substrate side, and a electroless CoWP plating layer.

Abstract: Provided is a novel comprising culturing host cells into which a foreign gene has been introduced for producing a protein in a soluble form encoded by the foreign gene, recombinant cells are cultured in the temperature range lower than or equal to the upper temperature limit for growth of the host cells and higher than 5 degrees below the upper temperature limit for growth of the host cells after induction of expression.