Abstract: An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having a ceiling plate section 22A and a bottom plate section 42. External heaters 36, 38 and 40 surrounding the hermetic vessel 20, and a vapor pressure control section which communicates hermetically with the vessel 20.

Abstract: A novel, biologically active substance, poststatin, has been isolated from a culture medium of microorganism belonging to Streptomyces. The novel substance is a peptide compound having a novel structure, wherein the peptide chains have ketone radicals. Thus substance has a high endopeptidase inhibition activity. It is possible to chemically synthesize poststatin related compound having ketone radicals in the peptide chains. These compounds also have an endopeptidase inhibition activity.

Abstract: In a MOS controlled power device, or MOS composite a static induction thyristor, an static induction thyristor (SI thyristor) unit, a MOS transistor connected in cascode relation to the SI thyristor unit and a voltage regulation element are merged onto the single monolithic chip. The SI thyristor unit has a cathode region of first conductivity type having high impurity concentration, an anode and a gate regions of second conductivity type having high impurity concentration, and a channel region of first conductivity type having low impurity concentration. The MOS transistor has a drain region which is the same region as the cathode region, a well or a base of second conductivity type formed adjacent to the channel region of the SI thyristor unit, and a source region of first conductivity type having high impurity concentration. The source region is formed within the well or above the base.

Abstract: A static induction device (SI device) at least shares a structure in which an SI thyristor, an IGT and a capacitor are merged onto the single monolithic chip. The SI thyristor has a cathode, an anode and a gate regions, and a channel. The IGT has a well on a surface of the channel, a source and drain regions within the well, a gate insulating film on the well, and a gate electrode on the gate insulating film. The capacitor comprises the gate region of the SI thyristor, the gate insulating film on the gate region, and the gate electrode. The cathode and the drain region are connected to each other through a high-conductive electrode.

Abstract: A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the substrate crystal according to either metal organic chemical vapor deposition (MO-CVD) or molecular layer epitaxy (MLE), thereby providing a source-drain structure, a gate side formed by etching the semiconductor regions of the source-drain structure, the gate side comprising either a (111)A face or a (111)B face, and a semiconductor region deposited as a gate by way of epitaxial growth on the gate side according to either MO-CVD or MLE.

Abstract: Benanomicin A and Benanomicin B are fermentatively produced by the cultivation of a new microorganism Actinomadura spadix, designated as MH193-16F4 strain.

Abstract: Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.

Abstract: In a process for contacting gas and liquid, gas and liquid are simultaneously passed through a layer of irregularly shaped pieces of foamed plastic material having diameters in a range between 1 mm and 50 mm. Since the gas and the liquid are passed through a contact region filled with particles of foamed plastic material, persistence of fine bubbles is increased due to the generation of flow turbulence preferably combined with high pressure. Further, the foamed plastic particles have a low specific weight and is highly durable, it can be used for an extended period of time without losing its processing capability.

Abstract: In an apparatus for growing a GaAs single crystal from its melt, As vapor which is controlled appropriately of its pressure is applied from an As chamber to the surface of the GaAs melt in a vessel throughout the growing process through an As passage communicating between the melt vessel and the As chamber, while establishing a gentle temperature gradient in the passage leading from the GaAs melt vessel to the As chamber. Whereby, a GaAs single crystal having a large diameter and a good crystal perfection with minimized deviation from stoichiometry and minimized lattice dislocation can be obtained.

Abstract: A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary driving gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation.

Abstract: Waste liquid is cleaned or purified primarily by removing organic contaminants therefrom by combination of a floating filter layer and an anaerobic biological process. The floating filter layer consists of irregularly shaped small pieces of lipophilic substances such as polypropylene and other plastics, and the organic contaminants are on the one hand filtered by this floating filter layer, and on the other hand decomposed on the surface of the small pieces forming the floating filter layer through anaerobic biological process. The system of the present invention is economical to build, and can be used as a part of sewage and waste liquid processing installations either for industrial or for household use.

Abstract: In this invention, a new microbial strain which is a strain of Actinomycetes and belongs to the genus Actinomadura, namely Actinomadura sp. MI215-NF3 strain is cultured, and MI215-NF3 substance, a novel antibiotic classifiable as a polyether antibiotic, is recovered from the resultant culture. MI215-NF3 substance and its salts obtained according to this invention are useful for therapeutic treatment of chicken coccidiosis and also have useful antibacterial activities against certain species of bacteria.

Abstract: A novel actinonin derivative and a salt thereof are provided, which are useful as enzyme inhibitors and particularly have strong inhibitory activities against enkephalinase and angiotensin-converting enzymes. This actinonin derivative is represented by general formula (I): ##STR1## wherein R.sup.1 is sulfoxymethyl or carboxyl or a substituted carboxyl group selected from carboxamide, hydroxyaminocarbonyl and alkoxycarbonyl groups; and R.sup.2 is hydroxyl, alkoxy, hydroxyamino or sulfoxyamino group.

Abstract: A DNA segment of this invention is a DNA fragment of a length of about 3.8 kb which is obtained by excising with a restriction endonuclease Bgl II a hybrid plasmid pST 141 having a length of about 12.6 kb of Streptomyces griseus 4-1 strain (FERM P-7984, namely, FERM BP-1198) to give a Bgl II-Bgl II DNA fragment, and then excising with a restriction endonuclease Sph I the resultant Bgl II-Bgl II DNA fragment having a length of about 7.0 kb and having the restriction endonuclease sites as shown in the restriction endonuclease map of FIG. 1 . This DNA fragment is a DNA which contains a streptomycin resistance gene and contains, in the vicinity of this gene, such a DNA region possessing a function to control the expression of the streptomycin resistance gene. An insertion of this DNA fragment having a length of about 3.8 kb into a suitable actinomycetes plasmid vector can produce such a hybrid plasmid which acts reliably as a selected marker of the streptomycin resistance.

Abstract: A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary driving gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation.

Abstract: A novel, biologically active substance, poststatin, has been isolated from a culture medium of microorganism belonging to Streptomyces. The novel substance is a peptide compound having a novel structure, wherein the peptide chains have ketone radicals. Thus substance has a high endopeptidase inhibition activity. It is possible to chemically synthesize poststatin related compound having ketone radicals in the peptide chains. These compounds also have an endopeptidase inhibition activity.

Abstract: Actinonin or a salt thereof is active as an inhibitor of angiogenesis in a mammal and is useful as a therapeutic agent for inhibiting angiogenesis in a mammal having diabetic retinopathy or inflammatory response accompanied by angiogenesis.

Abstract: Pharmaceutical compositions containing at least one of benanomicins A and B and their salts are now provided, which are useful to inhibit the infection of human T-cells with HIV, namely a virus causative of acquired human immunodeficiency syndrome (AIDS). Thus, benanomicins A and B as well as their salts are useful as antiviral agent against HIV.

Abstract: Benastatins A and B which are novel and physiologically active substances having the formula ##STR1## wherein R represents --CH.sub.2 --CH.sub.2 -- or --CH.dbd.CH--, exhibit a potent immunomodifier activity, a glutathione transferase inhibition activity and an anti-microorganism activity and are therefore extremely useful for various drugs.

Abstract: Two new antibiotics which are now nominated as benanomicin A and benanomicin B, respectively, are fermentatively produced by the cultivation of a new microorganism, designated as MH193-16F4 strain, of Actinomycetes. Benanomicins A and B each show antifungal activity and are useful as a therapeutic antifungal agent. A new compound, dexylosylbenanomicin B is now produced by chemical conversion of benanomicin B, and this semi-synthetic antibiotic also shows antifungal activity and is useful as a therapeutic antifungal agent.